专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120073503A1 PROCESSING SYSTEMS AND APPARATUSES HAVING A SHAFT COVER 审中-公开
标题翻译：加工系统和具有轴承盖的装置
公开(公告)号：US20120073503A1
公开(公告)日：2012-03-29
申请号：US13098241
申请日：2011-04-29
申请人： Juno Yu-Ting Huang , Sang Won Kang , David H. Quach , Wei-Yung Hsu
发明人： Juno Yu-Ting Huang , Sang Won Kang , David H. Quach , Wei-Yung Hsu
IPC分类号： C30B25/08 , C30B25/12
CPC分类号： C30B25/08 , C30B25/12 , C30B29/403
摘要： Apparatus and systems are disclosed for processing a substrate. In an embodiment, a system includes a processing chamber, which includes a substrate support to support the substrate. The chamber further includes a plate member positioned below the substrate support and designed to improve heating efficiency within the processing chamber. The processing chamber further includes a lower dome positioned below the plate member. The plate member is designed to prevent a coating from being deposited on the lower dome during processing conditions. The plate member is designed to prevent particles and debris from falling below the plate member. The plate member is designed to improve heating uniformity between the plate member and the substrate within the processing chamber.
摘要翻译：公开了用于处理衬底的装置和系统。在一个实施例中，系统包括处理室，其包括用于支撑衬底的衬底支撑件。腔室还包括位于衬底支撑件下方并被设计成提高处理室内的加热效率的板构件。处理室还包括位于板构件下方的下拱顶。板构件被设计成防止在加工条件下涂层沉积在下圆顶上。板构件被设计成防止颗粒和碎屑落在板构件下方。板构件被设计成改善处理室内的板构件和衬底之间的加热均匀性。

2. 发明申请

US20130023079A1 FABRICATION OF LIGHT EMITTING DIODES (LEDS) USING A DEGAS PROCESS 审中-公开
标题翻译：使用DEGAS工艺制造发光二极管（LED）
公开(公告)号：US20130023079A1
公开(公告)日：2013-01-24
申请号：US13552344
申请日：2012-07-18
申请人： Sang Won Kang , Jiang Lu , Hua Chung , Juno Yu-Ting Huang , Wei-Yung Hsu
发明人： Sang Won Kang , Jiang Lu , Hua Chung , Juno Yu-Ting Huang , Wei-Yung Hsu
IPC分类号： H01L33/04
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02656 , H01L33/0095
摘要： Methods of fabricating light emitting diodes using a degas process are described. For example, a method includes providing a partially formed group III-V material layer stack of an LED. Contaminants are removed from the partially formed group III-V material layer stack by a degas process. Formation of the group III-V material layer stack of the LED is then completed.
摘要翻译：描述了使用脱气工艺制造发光二极管的方法。例如，一种方法包括提供LED的部分形成的III-V族材料层堆叠。通过脱气工艺将污染物从部分形成的III-V族材料层堆中除去。然后完成LED的III-V族材料层堆叠的形成。

3. 发明申请

US20110308551A1 METHOD AND APPARATUS FOR INDUCING TURBULENT FLOW OF A PROCESSING CHAMBER CLEANING GAS 有权
标题翻译：用于诱导加工室清洁气体的涡流的方法和装置
公开(公告)号：US20110308551A1
公开(公告)日：2011-12-22
申请号：US13041230
申请日：2011-03-04
申请人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J.K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J.K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： B08B9/00 , B08B3/04
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/45506 , C23C16/45591 , H01L21/02041 , H01L21/67115 , Y10S438/905
摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.
摘要翻译：本发明的实施例一般涉及使用清洁板清洁腔室部件的设备和方法。清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

4. 发明授权

US08910644B2 Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas 有权
标题翻译：用于引起处理室清洁气体的紊流的方法和装置
公开(公告)号：US08910644B2
公开(公告)日：2014-12-16
申请号：US13041230
申请日：2011-03-04
申请人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： B08B3/02 , B08B5/00 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/67
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/45506 , C23C16/45591 , H01L21/02041 , H01L21/67115 , Y10S438/905
摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.
摘要翻译：本发明的实施例一般涉及使用清洁板清洁腔室部件的设备和方法。清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

5. 外观设计

USD664170S1 Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass 有权
标题翻译：用于引起处理室清洁玻璃的湍流的清洁板
公开(公告)号：USD664170S1
公开(公告)日：2012-07-24
申请号：US29386850
申请日：2011-03-04
申请人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
设计人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya

6. 发明申请

US20120235115A1 GROWTH OF III-V LED STACKS USING NANO MASKS 审中-公开
标题翻译：使用NANO MASKS的III-V LED堆叠的增长
公开(公告)号：US20120235115A1
公开(公告)日：2012-09-20
申请号：US13355255
申请日：2012-01-20
申请人： Sang Won Kang , Jie Su , Tuoh-Bin NG , David Bour , Wei-Yung Hsu
发明人： Sang Won Kang , Jie Su , Tuoh-Bin NG , David Bour , Wei-Yung Hsu
IPC分类号： H01L21/205 , C23C16/34 , C23C16/52 , H01L33/06
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/02 , H01L33/20
摘要： Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency.
摘要翻译：方法，用于制造具有改善晶体质量的发光二极管（LED）的半导体材料堆叠和设备。在诸如GaN的III-V族材料的核之间沉积生长塞，以形成纳米掩模。 III-V族材料从未被纳米掩模覆盖的核的区域横向长满，以形成具有降低的位错密度的连续材料层，以准备LED的n型和p型层的随后生长。即使存在纳米掩模，来自核的侧向过度生长也可进一步恢复缓冲层的表面形态。生长停止剂的存在可能进一步导致在LED堆叠的衬底侧上的空隙形成以提高光提取效率。

7. 发明授权

US08765501B2 Formation of group III-V material layers on patterned substrates 有权
标题翻译：在图案化基板上形成III-V族III族材料层
公开(公告)号：US08765501B2
公开(公告)日：2014-07-01
申请号：US13036261
申请日：2011-02-28
申请人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
发明人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , C23C16/06 , C30B23/025 , C30B25/04 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/0254 , H01L33/0066 , H01L33/007 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/30
摘要： Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
摘要翻译：描述了氮化镓和其它这样的相关膜的外延方法以及图案化蓝宝石衬底上的发光二极管以及其它这样的相关衬底。

8. 发明授权

US08410497B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08410497B2
公开(公告)日：2013-04-02
申请号：US12338438
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/14 , H01L33/32 , H01L33/387 , H01L33/40 , H01L33/641
摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.
摘要翻译：提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

9. 发明授权

US07829882B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07829882B2
公开(公告)日：2010-11-09
申请号：US11581335
申请日：2006-10-17
申请人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
发明人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L31/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译：本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。至少一个量子势垒层具有带隙调制多层结构。

10. 发明授权

US06426117B1 Method for forming a three-component nitride film containing metal and silicon 有权
标题翻译：用于形成含有金属和硅的三组分氮化物膜的方法
公开(公告)号：US06426117B1
公开(公告)日：2002-07-30
申请号：US09554443
申请日：2000-05-10
申请人： Kyoung Soo Yi , Won Yong Koh , Sang Won Kang
发明人： Kyoung Soo Yi , Won Yong Koh , Sang Won Kang
IPC分类号： C23C1634
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45531 , H01L21/28562 , H01L21/76846 , H01L2221/1078
摘要： A method for forming a three-component film containing metal, silicon and nitrogen for use in semiconductor devices on a substrate. The method of the present invention comprises the steps of: preparing separate reactive gases each including at least one selected from the group consisting of a gaseous metal compound, a gaseous silicon compound and an ammonia gas under conditions such that the gaseous meta compound and the ammonia gas does not form a mixture; determining a sequential gas supply cycle of the reactive gases so that supplies of the gaseous metal compound, the gaseous silicon compound and the ammonia gas are each included at least once within one gas supply cycle; and applying the reactive gases to the substrate by repeating the gas supply cycle at least once. According to the present invention, a three-component nitride film can be formed with a uniform thickness despite unevenness of a semiconductor substrate surface.
摘要翻译：一种用于形成用于半导体器件中的金属，硅和氮的三组分膜的方法。本发明的方法包括以下步骤：制备各自包括选自气态金属化合物，气态硅化合物和氨气中的至少一种的单独的反应性气体，使得气态化合物和氨气体不形成混合物; 确定反应气体的顺序气体供应循环，使得气体金属化合物，气态硅化合物和氨气的供应在一个气体供应循环内至少包含一次; 并且通过重复气体供应循环至少一次将反应性气体施加到基底。根据本发明，即使半导体衬底表面的不均匀，也可以均匀地形成三组分氮化物膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式