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1. 发明申请

US20110308551A1 METHOD AND APPARATUS FOR INDUCING TURBULENT FLOW OF A PROCESSING CHAMBER CLEANING GAS 有权
标题翻译：用于诱导加工室清洁气体的涡流的方法和装置
公开(公告)号：US20110308551A1
公开(公告)日：2011-12-22
申请号：US13041230
申请日：2011-03-04
申请人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J.K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J.K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： B08B9/00 , B08B3/04
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/45506 , C23C16/45591 , H01L21/02041 , H01L21/67115 , Y10S438/905
摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.
摘要翻译：本发明的实施例一般涉及使用清洁板清洁腔室部件的设备和方法。清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

2. 发明授权

US08910644B2 Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas 有权
标题翻译：用于引起处理室清洁气体的紊流的方法和装置
公开(公告)号：US08910644B2
公开(公告)日：2014-12-16
申请号：US13041230
申请日：2011-03-04
申请人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： B08B3/02 , B08B5/00 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/67
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/45506 , C23C16/45591 , H01L21/02041 , H01L21/67115 , Y10S438/905
摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.
摘要翻译：本发明的实施例一般涉及使用清洁板清洁腔室部件的设备和方法。清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

3. 外观设计

USD664170S1 Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass 有权
标题翻译：用于引起处理室清洁玻璃的湍流的清洁板
公开(公告)号：USD664170S1
公开(公告)日：2012-07-24
申请号：US29386850
申请日：2011-03-04
申请人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
设计人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J. K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya

4. 发明申请

US20110256692A1 MULTIPLE PRECURSOR CONCENTRIC DELIVERY SHOWERHEAD 审中-公开
标题翻译：多款前置式集散式淋浴花洒
公开(公告)号：US20110256692A1
公开(公告)日：2011-10-20
申请号：US12785241
申请日：2010-05-21
申请人： Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： B05B1/18 , C23C16/45519 , C23C16/45565 , C23C16/52 , C30B25/14 , H01L21/67115
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus provides a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, a plurality of concentric tube assemblies are disposed within the showerhead to separately deliver a first gas from a first gas channel and a second gas from a second gas channel into the processing volume of the chamber. In one embodiment, the showerhead further includes a heat exchanging channel through which the plurality of concentric tube assemblies is disposed.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，该设备提供处理室，其包括具有独立入口和通道的喷头，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。在一个实施例中，多个同心管组件设置在喷头内，以将第一气体从第一气体通道和第二气体从第二气体通道单独输送到腔室的处理容积中。在一个实施例中，喷头还包括热交换通道，多个同心管组件通过该热交换通道设置。

5. 发明授权

US10130958B2 Showerhead assembly with gas injection distribution devices 有权
公开(公告)号：US10130958B2
公开(公告)日：2018-11-20
申请号：US12856747
申请日：2010-08-16
申请人： Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： C23C16/455 , B05B1/18 , C23C16/52 , C30B25/14 , H01L21/67
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.

6. 发明授权

US08361892B2 Multiple precursor showerhead with by-pass ports 有权
标题翻译：带有旁路端口的多个前身淋浴头
公开(公告)号：US08361892B2
公开(公告)日：2013-01-29
申请号：US12815557
申请日：2010-06-15
申请人： Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： H01L21/36
CPC分类号： B05B1/18 , C23C16/45519 , C23C16/45565 , C23C16/52 , C30B25/14 , H01L21/67115
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. In one embodiment, the showerhead includes a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，该设备包括具有分离的入口和通道的喷头的处理室，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。在一个实施例中，喷头包括一个或多个清洁气体导管，其构造成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。在一个实施例中，喷头包括多个计量端口，其配置成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。结果，与仅通过处理气体通道将清洁气体引入室中相比，可以更有效和有效地清洁处理室部件。

7. 发明申请

US20110256645A1 MULTIPLE PRECURSOR SHOWERHEAD WITH BY-PASS PORTS 有权
标题翻译：多通道前置放大器带旁路口
公开(公告)号：US20110256645A1
公开(公告)日：2011-10-20
申请号：US12815557
申请日：2010-06-15
申请人： Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： H01L21/66 , C23C16/00 , H01L21/205
CPC分类号： B05B1/18 , C23C16/45519 , C23C16/45565 , C23C16/52 , C30B25/14 , H01L21/67115
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. In one embodiment, the showerhead includes a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，该设备包括具有分离的入口和通道的喷头的处理室，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。在一个实施例中，喷头包括一个或多个清洁气体导管，其构造成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。在一个实施例中，喷头包括多个计量端口，其配置成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。结果，与仅通过处理气体通道将清洁气体引入室中相比，可以更有效和有效地清洁处理室部件。

8. 发明申请

US20110253044A1 SHOWERHEAD ASSEMBLY WITH METROLOGY PORT PURGE 审中-公开
标题翻译： SHOWERHEAD装配与计量港口
公开(公告)号：US20110253044A1
公开(公告)日：2011-10-20
申请号：US12831522
申请日：2010-07-07
申请人： Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： B05C11/10
CPC分类号： B05B1/18 , C23C16/45519 , C23C16/45565 , C23C16/52 , C30B25/14 , H01L21/67115
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus is a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes metrology ports with purge gas assemblies configured and positioned to deliver a purge gas to prevent deposition thereon. In one embodiment, the metrology port is configured to receive a temperature measurement device, and the purge gas assembly is a concentric tube configuration configured to prevent deposition on components of the temperature measurement device. In one embodiment, the metrology port has a sensor window and is configured to receive an optical measurement device, and the purge gas assembly and sensor window are configured to prevent deposition on the sensor window.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，该设备是包括具有分离的入口和通道的喷头的处理室，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。在一个实施例中，喷头包括具有吹扫气体组件的计量端口，其被配置和定位成输送净化气体以防止在其上沉积。在一个实施例中，测量端口被配置为接收温度测量装置，并且净化气体组件是配置成防止沉积在温度测量装置的部件上的同心管配置。在一个实施例中，测量端口具有传感器窗口并且被配置为接收光学测量装置，并且净化气体组件和传感器窗口被配置为防止在传感器窗口上沉积。

9. 发明申请

US20110256315A1 SHOWERHEAD ASSEMBLY WITH GAS INJECTION DISTRIBUTION DEVICES 审中-公开
标题翻译：淋浴器组装与气体注射分配装置
公开(公告)号：US20110256315A1
公开(公告)日：2011-10-20
申请号：US12856747
申请日：2010-08-16
申请人： Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： C23C16/455
CPC分类号： B05B1/18 , C23C16/45519 , C23C16/45565 , C23C16/52 , C30B25/14 , H01L21/67115
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。该装置包括具有单独的入口和歧管的喷头组件，用于在进入处理体积之前将不同的处理气体输送到室的处理体积而不混合气体。淋浴头包括多个气体分配装置，其设置在多个气体入口内，用于将一个处理气体注入和分配到歧管上，以均匀地输送到腔室的处理容积中。每个气体分配装置优选地具有喷嘴，喷嘴构造成使流过其中的处理气体均匀地分布，同时最小化歧管内的处理气体的再循环。结果，在位于处理室的处理容积中的多个基板上实现了改善的沉积均匀性。

10. 发明申请

US20120024388A1 MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD 有权
标题翻译：多通道直通通道
公开(公告)号：US20120024388A1
公开(公告)日：2012-02-02
申请号：US13181431
申请日：2011-07-12
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： F16L37/56
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个直接通道，其分离前体气体。将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

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