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1. 发明授权

US06426117B1 Method for forming a three-component nitride film containing metal and silicon 有权
标题翻译：用于形成含有金属和硅的三组分氮化物膜的方法
公开(公告)号：US06426117B1
公开(公告)日：2002-07-30
申请号：US09554443
申请日：2000-05-10
申请人： Kyoung Soo Yi , Won Yong Koh , Sang Won Kang
发明人： Kyoung Soo Yi , Won Yong Koh , Sang Won Kang
IPC分类号： C23C1634
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45531 , H01L21/28562 , H01L21/76846 , H01L2221/1078
摘要： A method for forming a three-component film containing metal, silicon and nitrogen for use in semiconductor devices on a substrate. The method of the present invention comprises the steps of: preparing separate reactive gases each including at least one selected from the group consisting of a gaseous metal compound, a gaseous silicon compound and an ammonia gas under conditions such that the gaseous meta compound and the ammonia gas does not form a mixture; determining a sequential gas supply cycle of the reactive gases so that supplies of the gaseous metal compound, the gaseous silicon compound and the ammonia gas are each included at least once within one gas supply cycle; and applying the reactive gases to the substrate by repeating the gas supply cycle at least once. According to the present invention, a three-component nitride film can be formed with a uniform thickness despite unevenness of a semiconductor substrate surface.
摘要翻译：一种用于形成用于半导体器件中的金属，硅和氮的三组分膜的方法。本发明的方法包括以下步骤：制备各自包括选自气态金属化合物，气态硅化合物和氨气中的至少一种的单独的反应性气体，使得气态化合物和氨气体不形成混合物; 确定反应气体的顺序气体供应循环，使得气体金属化合物，气态硅化合物和氨气的供应在一个气体供应循环内至少包含一次; 并且通过重复气体供应循环至少一次将反应性气体施加到基底。根据本发明，即使半导体衬底表面的不均匀，也可以均匀地形成三组分氮化物膜。

2. 发明授权

US08765501B2 Formation of group III-V material layers on patterned substrates 有权
标题翻译：在图案化基板上形成III-V族III族材料层
公开(公告)号：US08765501B2
公开(公告)日：2014-07-01
申请号：US13036261
申请日：2011-02-28
申请人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
发明人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , C23C16/06 , C30B23/025 , C30B25/04 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/0254 , H01L33/0066 , H01L33/007 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/30
摘要： Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
摘要翻译：描述了氮化镓和其它这样的相关膜的外延方法以及图案化蓝宝石衬底上的发光二极管以及其它这样的相关衬底。

3. 发明授权

US08410497B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08410497B2
公开(公告)日：2013-04-02
申请号：US12338438
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/14 , H01L33/32 , H01L33/387 , H01L33/40 , H01L33/641
摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.
摘要翻译：提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

4. 发明授权

US07829882B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07829882B2
公开(公告)日：2010-11-09
申请号：US11581335
申请日：2006-10-17
申请人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
发明人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L31/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译：本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。至少一个量子势垒层具有带隙调制多层结构。

5. 发明授权

US07888670B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07888670B2
公开(公告)日：2011-02-15
申请号：US12081272
申请日：2008-04-14
申请人： Sang Heon Han , Sang Won Kang , Jeong Tak Oh , Seung Beom Seo , Dong Joon Kim , Hyun Wook Shim
发明人： Sang Heon Han , Sang Won Kang , Jeong Tak Oh , Seung Beom Seo , Dong Joon Kim , Hyun Wook Shim
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/12 , H01L33/30
摘要： There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.
摘要翻译：提供了一种氮化物半导体发光器件，包括：n型半导体区域; 形成在n型半导体区域上的有源层; 形成在有源层上的p型半导体区域; 与n型半导体区域接触的n电极; 形成在p型半导体区域上的p电极; 以及形成在n型半导体区域和p型半导体区域中的至少一个中的至少一个中间层，设置在n电极上方的中间层，其中中间层由多层结构形成，其中在沉积具有彼此不同带隙的至少三层，其中多层结构包括AlGaN层/ GaN层/ InGaN层堆叠和InGaN层/ GaN层/ AlGaN层堆叠之一。

6. 发明申请

US20090166669A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090166669A1
公开(公告)日：2009-07-02
申请号：US12251782
申请日：2008-10-15
申请人： Je Won Kim , Yong Chun Kim , Sang Won Kang , Seok Min Hwang , Seung Wan Chae
发明人： Je Won Kim , Yong Chun Kim , Sang Won Kang , Seok Min Hwang , Seung Wan Chae
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L33/025
摘要： A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.
摘要翻译：一种氮化物半导体发光器件及其制造方法，其可以在确保均匀的电流扩展到有源层的同时防止诸如位错之类的晶体缺陷。氮化物半导体发光器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上的第一中间图案层，具有由Si化合物制成的纳米级点结构的第一中间图案层，形成在所述第一氮化物半导体层上的第二氮化物半导体层，形成在所述第二氮化物半导体层上的第二中间图案层，所述第二中间图案层具有由Si化合物制成的纳米级点结构，所述第二中间图案层是电绝缘的形成在第二氮化物半导体层上的第三氮化物半导体层，形成在第三氮化物半导体层上的有源层和形成在有源层上的p型氮化物半导体层。

7. 发明授权

US07389227B2 High-speed search method for LSP quantizer using split VQ and fixed codebook of G.729 speech encoder 有权
标题翻译：使用G.729语音编码器的分割VQ和固定码本的LSP量化器的高速搜索方法
公开(公告)号：US07389227B2
公开(公告)日：2008-06-17
申请号：US09749782
申请日：2000-12-28
申请人： Sang Won Kang , Chang Yong Son , Won Il Lee , Yoo Na Sung , Min Kyu Shim , Seong Hoon Hong
发明人： Sang Won Kang , Chang Yong Son , Won Il Lee , Yoo Na Sung , Min Kyu Shim , Seong Hoon Hong
IPC分类号： G10L19/12
CPC分类号： G10L19/07 , G10L2019/0005
摘要： A high-speed search method in a speech encoder using an order character of LSP (Line Spectrum Pair) parameters in an LSP parameter quantizer using SVQ (Split Vector Quantization) used in a low-speed transmission speech encoder, includes the steps of rearranging a codebook according to an element value of a reference row for determining a range of code vectors to be searched; and determining a search range by using an order character between a given target vector and an arranged code vector to obtain an optimal code vector. The method gives effects of reducing computational complexity required to search the codebook without signal distortion in quantizing the LSP parameters of the speech encoder using SVQ, and reducing computational complexity without loss of tone quality in G.729 fixed codebook search by performing candidate selection and search on the basis of the correlation value size of the pulse position index.
摘要翻译：在使用在低速传输语音编码器中使用的SVQ（分割矢量量化）的LSP参数量化器中使用LSP（线谱对）参数的顺序字符的语音编码器中的高速搜索方法包括以下步骤：码本，根据用于确定要搜索的码矢量的范围的参考行的元素值; 以及通过使用给定目标向量和排列的代码向量之间的顺序字符来确定搜索范围，以获得最佳代码向量。该方法提供了在使用SVQ量化语音编码器的LSP参数的同时降低搜索码本所需的计算复杂度，并且通过执行候选者选择和搜索来降低计算复杂度而不损失G.729固定码本搜索中的音调质量的效果基于脉冲位置指数的相关值大小。

8. 发明申请

US20070293438A1 ANTIBODY SPECIFICALLY BINDING TO SULFONYLATED PROTEIN PROTEIN AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：抗体与硫蛋白蛋白质的特异性结合及其生产方法
公开(公告)号：US20070293438A1
公开(公告)日：2007-12-20
申请号：US11828791
申请日：2007-07-26
申请人： Sang Won Kang , Young Lee , Hyung Kim , Kyung Kim , Jong Lee , Soon Kwon
发明人： Sang Won Kang , Young Lee , Hyung Kim , Kyung Kim , Jong Lee , Soon Kwon
IPC分类号： A61K38/00 , A61P43/00
CPC分类号： C07K16/40 , C07K16/44
摘要： Provided is a method for producing an antibody binding to a sulfonylated isoform of a protein; not to a non-sulfonylated isoform of the protein and other proteins, including: providing a peptide comprised of 6 to 15 amino acids derived from the protein and having a sulfonylated cysteine residue; inducing an antibody to the peptide in an animal; and isolating a population of antibodies reactive to the peptide.
摘要翻译：本发明提供了与蛋白质的磺酰化同种型结合的抗体的制造方法。不是蛋白质和其他蛋白质的非磺酰化同种型，包括：提供由蛋白质衍生的具有磺化半胱氨酸残基的6至15个氨基酸的肽; 在动物中诱导该肽的抗体; 并分离出与肽反应的抗体群。

9. 发明授权

US06622120B1 Fast search method for LSP quantization 失效
标题翻译：用于LSP量化的快速搜索方法
公开(公告)号：US06622120B1
公开(公告)日：2003-09-16
申请号：US09498998
申请日：2000-02-04
申请人： Byung Sik Yoon , Sang Won Kang , Chang Yong Son , Hyoung Jung Kim , Jung Chul Lee
发明人： Byung Sik Yoon , Sang Won Kang , Chang Yong Son , Hyoung Jung Kim , Jung Chul Lee
IPC分类号： G10L1912
CPC分类号： G10L19/06
摘要： A fast search method for LSP (Linear Spectrum Pair) quantization is provided. The fast search method in accordance with an embodiment of the present invention includes the following steps. A first step is obtaining a target vector and a code vector. The target vector and the code vector are converted for ordering property. A second step is generating a code book having the ordering property for sub-matrices by utilizing the target vector and the code vector. A third step is selecting a particular line for determining a search scope in the code books and sorting the code book in descending order with respect to component values of the particular line. A fourth step is determining the search scope by utilizing the ordering property of the target vector and the sorted code vectors. The fifth step is obtaining an error standard by utilizing the target vector and the code vector, and obtaining an optimal code vector by utilizing the error standard within the determined search scope.
摘要翻译：提供了一种用于LSP（线性频谱对）量化的快速搜索方法。根据本发明的实施例的快速搜索方法包括以下步骤。第一步是获得目标矢量和码矢量。目标向量和代码矢量被转换为排序属性。第二步是利用目标矢量和码矢量生成具有子矩阵的排序特性的码本。第三步是选择用于确定代码簿中的搜索范围的特定行，并且相对于特定行的分量值按降序排序代码本。第四步是通过利用目标矢量的排序属性和分类的代码矢量来确定搜索范围。第五步是通过利用目标矢量和码矢量来获得误差标准，并通过利用所确定的搜索范围内的误差标准来获得最佳码矢量。

10. 发明授权

US09196795B2 Formation of group III-V material layers on patterned substrates 有权
标题翻译：在图案化基板上形成III-V族III族材料层
公开(公告)号：US09196795B2
公开(公告)日：2015-11-24
申请号：US14315190
申请日：2014-06-25
申请人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
发明人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
IPC分类号： H01L29/22 , H01L33/32 , H01L33/22 , H01L33/16 , H01L33/30 , C30B23/02 , C30B25/04 , C30B25/18 , C30B29/40 , H01L21/02 , C23C16/06 , H01L33/20 , H01L33/00
CPC分类号： H01L33/32 , C23C16/06 , C30B23/025 , C30B25/04 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/0254 , H01L33/0066 , H01L33/007 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/30
摘要： Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
摘要翻译：描述了氮化镓和其它这样的相关膜的外延方法以及图案化蓝宝石衬底上的发光二极管以及其它这样的相关衬底。

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