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    • 1. 发明授权
    • Method for fabricating a planar buried heterostructure laser diode
    • 制造平面埋入异质结激光二极管的方法
    • US5665612A
    • 1997-09-09
    • US512224
    • 1995-08-07
    • Jung-Kee LeeDong-Hoon JangJeong-Soo KimKyung-Hyun Park
    • Jung-Kee LeeDong-Hoon JangJeong-Soo KimKyung-Hyun Park
    • H01S5/00H01S5/20H01S5/227H01S5/30H01S5/343H01L21/265
    • B82Y20/00H01S5/227H01S5/2081H01S5/2275H01S5/34306H01S5/34313
    • Disclosed is a method for fabricating a planar buried heterostructure laser diode, comprising the steps of sequentially forming a first clad layer, an undoped active layer and a second clad layer on a substrate so as to complete a first crystal growth; forming a patterned mask layer on the second clad layer; non-selectively etching the second clad layer, the active layer, the first clad layer and the substrate using the mask layer as an etching mask; selectively etching the substrate and the first and second layers; sequentially forming a first and second current blocking layers on a structure formed by the selective etching step so as to complete a second crystal growth; sequentially forming a third clad layer and an ohmic contact layer thereon after removal of the mask layer so as to complete a third crystal growth; and forming a first electrode on a rear surface of the substrate and forming a second electrode on a surface of the third clad layer. By the method, a leakage current induced in an interface between the active layer and the first current blocking layer provided therein can be reduced in proportion to a distance between the active layer and the second current blocking layer formed on the first current blocking layer, and therefore performance of the laser diode can be enhanced.
    • 公开了一种制造平面埋置异质结激光二极管的方法,包括以下步骤:在衬底上依次形成第一覆层,未掺杂有源层和第二覆层,以完成第一晶体生长; 在所述第二覆盖层上形成图案化掩模层; 使用掩模层作为蚀刻掩模,非选择性地蚀刻第二覆盖层,有源层,第一覆盖层和衬底; 选择性地蚀刻基板和第一和第二层; 在通过选择性蚀刻步骤形成的结构上依次形成第一和第二电流阻挡层,以完成第二晶体生长; 在除去掩模层之后依次形成第三覆层和欧姆接触层,以完成第三晶体生长; 以及在所述基板的后表面上形成第一电极,并在所述第三包覆层的表面上形成第二电极。 通过该方法,可以在有源层和其中设置的第一电流阻挡层之间的界面中感应的漏电流与形成在第一电流阻挡层上的有源层和第二电流阻挡层之间的距离成比例地减小,以及 因此可以提高激光二极管的性能。
    • 2. 发明授权
    • Semiconductor laser device and method for manufacturing the same
    • 半导体激光装置及其制造方法
    • US5504768A
    • 1996-04-02
    • US161422
    • 1993-12-06
    • Chan-Yong ParkJi-Beom YooKyung-Hyun ParkHong-Man KimDong-Hoon JangJung-Kee Lee
    • Chan-Yong ParkJi-Beom YooKyung-Hyun ParkHong-Man KimDong-Hoon JangJung-Kee Lee
    • H01S5/00H01S5/042H01S5/12H01S5/20H01S5/22H01S3/18H01L21/31
    • H01S5/22H01S5/0425H01S5/12H01S5/2081
    • A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic contact layer; depositing a patterned photoresist on the ohmic contact layer to define a p- electrode stripe layer; forming the p- electrode stripe layer only on a part of the ohmic contact layer; performing an annealing process; etching back the layers until the photo-waveguide layer is exposed, using the first patterned dielectric layer and the p- electrode stripe layer as an etching mask, to form a ridge; depositing a second dielectric layer on the substrate formed thus; selectively removing the second dielectric layer to form a contact hole on the p- electrode stripe layer; coating a bonding pad metal layer on the second dielectric layer and in the contact hole; and coating an n- electrode metal layer on bottom surface of the substrate. Since ohmic contact resistance is lowered, thermal generation and threshold current of oscillation are decreased. As a result, operating characteristics of the laser device can be largely improved.
    • 一种制造半导体激光器件的方法,包括以下步骤:在InP衬底的上表面上依次形成有源层,光波导层,包层和欧姆接触层; 在所述欧姆接触层上形成第一图案化电介质层; 在欧姆接触层上沉积图案化的光致抗蚀剂以限定p-电极条纹层; 仅在欧姆接触层的一部分上形成p-电极条纹层; 进行退火处理; 使用第一图案化电介质层和p-电极条纹层作为蚀刻掩模,蚀刻层,直到光波导层被曝光,以形成脊; 在由此形成的衬底上沉积第二介电层; 选择性地去除所述第二电介质层以在所述p电极条带层上形成接触孔; 在所述第二电介质层和所述接触孔中涂覆焊垫金属层; 并在衬底的底表面上涂覆n-电极金属层。 由于欧姆接触电阻降低,所以发热和振荡的阈值电流降低。 结果,可以大大提高激光器件的工作特性。
    • 3. 发明授权
    • Wavelength locked integrated optical source structure using multiple microcavity
    • 波长锁定集成光源结构采用多个微腔
    • US06798799B2
    • 2004-09-28
    • US10095419
    • 2002-03-11
    • Dong-Hoon JangDong-Soo BangJung-Kee Lee
    • Dong-Hoon JangDong-Soo BangJung-Kee Lee
    • H01S304
    • H01S5/026H01S5/02252H01S5/0264H01S5/0687H01S5/1085H01S5/125
    • A wavelength-locked, integrated optical signal source structure using a semiconductor laser device is disclosed. The optical source structure has a semiconductor laser formed on a semiconductor substrate, and an etched portion coupled with an output end of the semiconductor laser. The etched portion is configured to pass on a first amount of light beam radiated by the semiconductor laser, and to reflect a second amount of light beam by a given reflection angle. A multiple microcavity is formed in a position spaced apart from the etched portion, and the first amount of light beam is incident upon the multiple microcavity. The optical source structure has a first optical detector for detecting the first amount of light beam passing through the multiple microcavity, and a second optical detector for detecting the second amount of light beam reflected by a slanted, reflecting surface portion of the etched portion. The relative change in the light intensity in the first and second optical detectors is measured out to maintain a constant optical wavelength.
    • 公开了一种使用半导体激光器件的波长锁定集成光信号源结构。 光源结构具有形成在半导体衬底上的半导体激光器和与半导体激光器的输出端耦合的蚀刻部分。 蚀刻部分被配置为通过由半导体激光器辐射的第一量光束并且以给定的反射角度反射第二量的光束。 多个微腔形成在与蚀刻部分间隔开的位置,并且第一量光束入射到多个微腔上。 光源结构具有用于检测通过多个微腔的第一光束量的第一光学检测器和用于检测被蚀刻部分的倾斜的反射表面部分反射的第二光束量的第二光学检测器。 测量第一和第二光学检测器中的光强度的相对变化以保持恒定的光学波长。