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1. 发明授权

US08652928B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08652928B2
公开(公告)日：2014-02-18
申请号：US13240883
申请日：2011-09-22
申请人： Young-Bae Yoon , Jeong-Dong Choe , Dong-Hoon Jang , Ki-Hyun Kim
发明人： Young-Bae Yoon , Jeong-Dong Choe , Dong-Hoon Jang , Ki-Hyun Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/823481 , H01L21/823456 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device includes a substrate having a first area and a second area, a first transistor in the first area, a second transistor in the second area, an isolation layer between the first area and the second area, and at least one buried shield structure on the isolation layer.
摘要翻译：半导体器件包括具有第一区域和第二区域的衬底，第一区域中的第一晶体管，第二区域中的第二晶体管，第一区域和第二区域之间的隔离层，以及至少一个掩埋屏蔽结构在隔离层上。

2. 发明授权

US08059469B2 Semiconductor device including driving transistors 有权
标题翻译：包括驱动晶体管的半导体器件
公开(公告)号：US08059469B2
公开(公告)日：2011-11-15
申请号：US12481916
申请日：2009-06-10
申请人： Se-Hoon Lee , Choong-Ho Lee , Jeong-Dong Choe , Tae-Yong Kim , Woo-Jung Kim , Dong-Hoon Jang , Young-Bae Yoon , Ki-Hyun Kim , Min-Tai Yu
发明人： Se-Hoon Lee , Choong-Ho Lee , Jeong-Dong Choe , Tae-Yong Kim , Woo-Jung Kim , Dong-Hoon Jang , Young-Bae Yoon , Ki-Hyun Kim , Min-Tai Yu
IPC分类号： G11C11/34
CPC分类号： H01L27/11573 , H01L21/823425 , H01L27/0207 , H01L27/105 , H01L27/11519 , H01L27/11526 , H01L27/11531 , H01L27/11568 , H01L29/78
摘要： A semiconductor device includes a driving active region defined in a substrate and at least three driving transistors disposed at the driving active region. The driving transistors share one common source/drain, and each of the driving transistors includes individual source/drains being independent from each other. The common source/drain and the individual source/drains are disposed in the driving active region.
摘要翻译：半导体器件包括限定在衬底中的驱动有源区和设置在驱动有源区的至少三个驱动晶体管。驱动晶体管共享一个共同的源极/漏极，并且每个驱动晶体管包括彼此独立的各个源极/漏极。公共源极/漏极和各个源极/漏极设置在驱动有源区域中。

3. 发明申请

US20090230456A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20090230456A1
公开(公告)日：2009-09-17
申请号：US12382232
申请日：2009-03-11
申请人： Young-Bae Yoon , Jeong-Dong Choe , Dong-Hoon Jang , Ki-Hyun Kim
发明人： Young-Bae Yoon , Jeong-Dong Choe , Dong-Hoon Jang , Ki-Hyun Kim
IPC分类号： H01L29/788 , H01L27/06
CPC分类号： H01L21/823481 , H01L21/823456 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device includes a substrate having a first area and a second area, a first transistor in the first area, a second transistor in the second area, an isolation layer between the first area and the second area, and at least one buried shield structure on the isolation layer.
摘要翻译：半导体器件包括具有第一区域和第二区域的衬底，第一区域中的第一晶体管，第二区域中的第二晶体管，第一区域和第二区域之间的隔离层，以及至少一个掩埋屏蔽结构在隔离层上。

4. 发明授权

US08039905B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08039905B2
公开(公告)日：2011-10-18
申请号：US12382232
申请日：2009-03-11
申请人： Young-Bae Yoon , Jeong-Dong Choe , Dong-Hoon Jang , Ki-Hyun Kim
发明人： Young-Bae Yoon , Jeong-Dong Choe , Dong-Hoon Jang , Ki-Hyun Kim
IPC分类号： H01L29/66
CPC分类号： H01L21/823481 , H01L21/823456 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device includes a substrate having a first area and a second area, a first transistor in the first area, a second transistor in the second area, an isolation layer between the first area and the second area, and at least one buried shield structure on the isolation layer.
摘要翻译：半导体器件包括具有第一区域和第二区域的衬底，第一区域中的第一晶体管，第二区域中的第二晶体管，第一区域和第二区域之间的隔离层，以及至少一个掩埋屏蔽结构在隔离层上。

5. 发明申请

US20100008152A1 SEMICONDUCTOR DEVICE INCLUDING DRIVING TRANSISTORS 有权
标题翻译：包括驱动晶体管的半导体器件
公开(公告)号：US20100008152A1
公开(公告)日：2010-01-14
申请号：US12481916
申请日：2009-06-10
申请人： Se-Hoon Lee , Choong-Ho Lee , Jeong-Dong Choe , Tae-Yong Kim , Woo-Jung Kim , Dong-Hoon Jang , Young-Bae Yoon , Ki-Hyun Kim , Min-Tai Yu
发明人： Se-Hoon Lee , Choong-Ho Lee , Jeong-Dong Choe , Tae-Yong Kim , Woo-Jung Kim , Dong-Hoon Jang , Young-Bae Yoon , Ki-Hyun Kim , Min-Tai Yu
IPC分类号： G11C11/4096 , G11C5/06
CPC分类号： H01L27/11573 , H01L21/823425 , H01L27/0207 , H01L27/105 , H01L27/11519 , H01L27/11526 , H01L27/11531 , H01L27/11568 , H01L29/78
摘要： A semiconductor device includes a driving active region defined in a substrate and at least three driving transistors disposed at the driving active region. The driving transistors share one common source/drain, and each of the driving transistors includes individual source/drains being independent from each other. The common source/drain and the individual source/drains are disposed in the driving active region.
摘要翻译：半导体器件包括限定在衬底中的驱动有源区和设置在驱动有源区的至少三个驱动晶体管。驱动晶体管共享一个共同的源极/漏极，并且每个驱动晶体管包括彼此独立的各个源极/漏极。公共源极/漏极和各个源极/漏极设置在驱动有源区域中。

6. 发明申请

US20120015496A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120015496A1
公开(公告)日：2012-01-19
申请号：US13240883
申请日：2011-09-22
申请人： Young-Bae YOON , Jeong-Dong Choe , Dong-Hoon Jang , Ki-Hyun Kim
发明人： Young-Bae YOON , Jeong-Dong Choe , Dong-Hoon Jang , Ki-Hyun Kim
IPC分类号： H01L21/762
CPC分类号： H01L21/823481 , H01L21/823456 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device includes a substrate having a first area and a second area, a first transistor in the first area, a second transistor in the second area, an isolation layer between the first area and the second area, and at least one buried shield structure on the isolation layer.
摘要翻译：半导体器件包括具有第一区域和第二区域的衬底，第一区域中的第一晶体管，第二区域中的第二晶体管，第一区域和第二区域之间的隔离层，以及至少一个掩埋屏蔽结构在隔离层上。

7. 发明授权

US08460508B2 Synchronous pulse plasma etching equipment and method of fabricating a semiconductor device 有权
标题翻译：同步脉冲等离子体蚀刻设备及制造半导体器件的方法
公开(公告)号：US08460508B2
公开(公告)日：2013-06-11
申请号：US12591602
申请日：2009-11-24
申请人： Ken Tokashiki , Hong Cho , Jeong-Dong Choe
发明人： Ken Tokashiki , Hong Cho , Jeong-Dong Choe
IPC分类号： H01L21/3065 , H01L21/302 , C23C16/00 , C23C16/50 , C23C16/52
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32174
摘要： Synchronous pulse plasma etching equipment includes a first electrode and one or more second electrodes configured to generate plasma in a plasma etching chamber. A first radio frequency power output unit is configured to apply a first radio frequency power having a first frequency and a first duty ratio to the first electrode, and to output a control signal including information about a phase of the first radio frequency power. At least one second radio frequency power output unit is configured to apply a second radio frequency power having a second frequency and a second duty ratio to a corresponding second electrode among the second electrodes. The second radio frequency power output unit is configured to control the second radio frequency power to be synchronized with the first radio frequency power or to have a phase difference from the first radio frequency power in response to the control signal.
摘要翻译：同步脉冲等离子体蚀刻设备包括第一电极和被配置为在等离子体蚀刻室中产生等离子体的一个或多个第二电极。第一射频功率输出单元被配置为向第一电极施加具有第一频率和第一占空比的第一射频功率，并且输出包括关于第一射频功率的相位的信息的控制信号。至少一个第二射频功率输出单元被配置为将具有第二频率和第二占空比的第二射频功率应用于第二电极中的对应的第二电极。第二射频功率输出单元被配置为响应于控制信号控制与第一射频功率同步的第二射频功率或者与第一射频功率相位差。

8. 发明申请

US20110079831A1 Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Including Recessed Channel Regions 审中-公开
标题翻译：金属氧化物半导体场效应晶体管（MOSFET）包括嵌入式通道区域
公开(公告)号：US20110079831A1
公开(公告)日：2011-04-07
申请号：US12966362
申请日：2010-12-13
申请人： Chang-Woo Oh , Dong-Gun Park , Sung-Young Lee , Chang-Sub Lee , Jeong-Dong Choe
发明人： Chang-Woo Oh , Dong-Gun Park , Sung-Young Lee , Chang-Sub Lee , Jeong-Dong Choe
IPC分类号： H01L29/772
CPC分类号： H01L29/66583 , H01L29/1037 , H01L29/66651
摘要： Unit cells of metal oxide semiconductor (MOS) transistors are provided having an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor includes a source region, a drain region and a gate. The gate is between the source region and the drain region. A channel region is provided between the source and drain regions. The channel region has a recessed region that is lower than bottom surfaces of the source and drain regions. Related methods of fabricating transistors are also provided.
摘要翻译：金属氧化物半导体（MOS）晶体管的单位电池在集成电路基板上具有集成电路基板和MOS晶体管。 MOS晶体管包括源极区，漏极区和栅极。栅极在源极区域和漏极区域之间。在源区和漏区之间提供沟道区。沟道区具有比源区和漏区的底表面低的凹陷区域。还提供了制造晶体管的相关方法。

9. 发明申请

US20100109087A1 Multichannel Metal Oxide Semiconductor (MOS) Transistors 审中-公开
标题翻译：多通道金属氧化物半导体（MOS）晶体管
公开(公告)号：US20100109087A1
公开(公告)日：2010-05-06
申请号：US12687613
申请日：2010-01-14
申请人： Kyoung-Hwan Yeo , Dong-Gun Park , Jeong-Dong Choe
发明人： Kyoung-Hwan Yeo , Dong-Gun Park , Jeong-Dong Choe
IPC分类号： H01L29/78
CPC分类号： H01L29/66484 , H01L21/8221 , H01L21/823412 , H01L27/0688 , H01L29/7831
摘要： Unit cells of metal oxide semiconductor (MOS) transistors are provided including an integrated circuit substrate an a MOS transistor on the integrated circuit substrate. The MOS transistor includes a source region, a drain region and a gate. The gate is positioned between the source region and the drain region. A horizontal channel is provided between the source and drain regions. The horizontal channel includes at least two spaced apart horizontal channel regions. Related methods of fabricating MOS transistors are also provided.
摘要翻译：提供金属氧化物半导体（MOS）晶体管的单元电池，其包括集成电路基板和集成电路基板上的MOS晶体管。 MOS晶体管包括源极区，漏极区和栅极。栅极位于源极区域和漏极区域之间。在源区和漏区之间提供水平通道。水平通道包括至少两个间隔开的水平通道区域。还提供了制造MOS晶体管的相关方法。

10. 发明申请

US20100044784A1 Vertical Channel Fin Field-Effect Transistors Having Increased Source/Drain Contact Area and Methods for Fabricating the Same 有权
标题翻译：具有增加的源极/漏极接触面积的垂直沟道鳍效应晶体管及其制造方法
公开(公告)号：US20100044784A1
公开(公告)日：2010-02-25
申请号：US12613025
申请日：2009-11-05
申请人： Chang-Woo Oh , Dong-Gun Park , Sung-Young Lee , Jeong-Dong Choe , Dong-Won Kim
发明人： Chang-Woo Oh , Dong-Gun Park , Sung-Young Lee , Jeong-Dong Choe , Dong-Won Kim
IPC分类号： H01L29/78
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/78618
摘要： A fin field-effect transistor (FinFET) device includes a fin-shaped active region having first and second source/drain regions therein and a channel region therebetween vertically protruding from a semiconductor substrate. A gate electrode is formed on an upper surface and sidewalls of the channel region. First and second source/drain contacts are formed on respective upper surfaces and sidewalls of the first and second source/drain regions of the fin-shaped active region at opposite sides of the gate electrode. The channel region may be narrower than the first and second source/drain regions of the fin-shaped active region.
摘要翻译：翅片场效应晶体管（FinFET）器件包括其中具有第一和第二源极/漏极区域的鳍状有源区域以及从半导体衬底垂直突出的沟道区域。栅电极形成在沟道区的上表面和侧壁上。第一和第二源极/漏极触点形成在栅极电极的相对侧的鳍状有源区域的第一和第二源极/漏极区域的相应上表面和侧壁上。沟道区域可以比鳍状有源区域的第一和第二源极/漏极区域窄。

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