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1. 发明授权

US06798799B2 Wavelength locked integrated optical source structure using multiple microcavity 失效
标题翻译：波长锁定集成光源结构采用多个微腔
公开(公告)号：US06798799B2
公开(公告)日：2004-09-28
申请号：US10095419
申请日：2002-03-11
申请人： Dong-Hoon Jang , Dong-Soo Bang , Jung-Kee Lee
发明人： Dong-Hoon Jang , Dong-Soo Bang , Jung-Kee Lee
IPC分类号： H01S304
CPC分类号： H01S5/026 , H01S5/02252 , H01S5/0264 , H01S5/0687 , H01S5/1085 , H01S5/125
摘要： A wavelength-locked, integrated optical signal source structure using a semiconductor laser device is disclosed. The optical source structure has a semiconductor laser formed on a semiconductor substrate, and an etched portion coupled with an output end of the semiconductor laser. The etched portion is configured to pass on a first amount of light beam radiated by the semiconductor laser, and to reflect a second amount of light beam by a given reflection angle. A multiple microcavity is formed in a position spaced apart from the etched portion, and the first amount of light beam is incident upon the multiple microcavity. The optical source structure has a first optical detector for detecting the first amount of light beam passing through the multiple microcavity, and a second optical detector for detecting the second amount of light beam reflected by a slanted, reflecting surface portion of the etched portion. The relative change in the light intensity in the first and second optical detectors is measured out to maintain a constant optical wavelength.
摘要翻译：公开了一种使用半导体激光器件的波长锁定集成光信号源结构。光源结构具有形成在半导体衬底上的半导体激光器和与半导体激光器的输出端耦合的蚀刻部分。蚀刻部分被配置为通过由半导体激光器辐射的第一量光束并且以给定的反射角度反射第二量的光束。多个微腔形成在与蚀刻部分间隔开的位置，并且第一量光束入射到多个微腔上。光源结构具有用于检测通过多个微腔的第一光束量的第一光学检测器和用于检测被蚀刻部分的倾斜的反射表面部分反射的第二光束量的第二光学检测器。测量第一和第二光学检测器中的光强度的相对变化以保持恒定的光学波长。

2. 发明授权

US06771681B2 Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US06771681B2
公开(公告)日：2004-08-03
申请号：US10190214
申请日：2002-07-05
申请人： Dong-Soo Bang , Dong-Hoon Jang , Jong-In Shim
发明人： Dong-Soo Bang , Dong-Hoon Jang , Jong-In Shim
IPC分类号： H01S3085
CPC分类号： H01S5/06258 , H01S5/026 , H01S5/1215 , H01S5/20 , H01S5/50
摘要： A distributed feedback semiconductor laser and a method of manufacture includes first and second clad layers having predetermined refractive indexes that are formed on a semiconductor substrate. A guide layer propagates light between the first and second clad layers. An oscillating clad layer oscillates light at a predetermined wavelength and an amplifying clad layer amplifies the light with a predetermined gain between the first clad layer and the guide layer. The distributed feedback semiconductor laser is divided into a laser oscillation section including the oscillating clad layer and a laser amplification section including the amplifying active layer. First and second gratings are formed on the lower surface of the guide layer in the laser oscillation section and in the laser amplification section, respectively.
摘要翻译：分布式反馈半导体激光器和制造方法包括形成在半导体基板上的具有预定折射率的第一和第二覆层。引导层在第一和第二覆盖层之间传播光。振荡包层以预定波长振荡光，并且放大包层以第一包层和引导层之间的预定增益放大光。分布式反馈半导体激光器被分为包括振荡包层的激光振荡部分和包括放大有源层的激光放大部分。第一和第二光栅分别形成在激光振荡部分和激光放大部分中的引导层的下表面上。

3. 发明授权

US06492239B2 Method for fabricating avalanche photodiode 有权
标题翻译：制造雪崩光电二极管的方法
公开(公告)号：US06492239B2
公开(公告)日：2002-12-10
申请号：US09839930
申请日：2001-04-20
申请人： Seung-Kee Yang , Dong-Soo Bang
发明人： Seung-Kee Yang , Dong-Soo Bang
IPC分类号： H01L2120
CPC分类号： H01L31/1075
摘要： An avalanche photodiode fabricating method with a simplified fabrication process and an improved reproducibility is disclosed. The method for fabricating an avalanche photodiode includes the steps of: (a) sequentially stacking, on an n-type InP substrate, an, InP buffer layer, an InGaAs absorption layer, an n-type InGaAsP grading layer, an n-type InP current adjusting layer, and an InP amplifying layer; (b) forming a protection layer on the InP amplifying layer, etching a light-receiving area of the protection layer and the InP amplifying layer to a predetermined depth, and partially etching the protection layer to expose a FGR forming area of the InP amplifying layer; (c) diffusing a diffusion source in the etched light-receiving area and the exposed FGR forming area; (d) forming a reflection suppressing layer on the diffusion layer formed on the light-receiving area by diffusing the diffusion source, the FGR layer and the exposed amplifying layer; (e) forming an upper electrode layer to a predetermined depth from the reflection suppressing layer to the diffusion layer formed on the light-receiving area; and, (f) forming a lower electrode layer on a back of the substrate.
摘要翻译：公开了一种具有简化的制造工艺和改进的再现性的雪崩光电二极管制造方法。制造雪崩光电二极管的方法包括以下步骤：（a）在n型InP衬底上依次堆叠InP缓冲层，InGaAs吸收层，n型InGaAsP分级层，n型InP 电流调节层和InP放大层; （b）在InP放大层上形成保护层，将保护层的光接收区域和InP放大层蚀刻到预定深度，并部分地蚀刻保护层以暴露InP放大层的FGR形成区域 ; （c）在蚀刻的光接收区域和暴露的FGR形成区域中扩散漫射源; （d）通过扩散扩散源，FGR层和曝光的放大层，在形成在受光区上的扩散层上形成反射抑制层; （e）从形成在所述受光区域上的所述反射抑制层到所述扩散层的上部电极层形成预定深度; 和（f）在基板的背面形成下电极层。

4. 发明授权

US06676846B2 Device and method for fabricating diffractive gratings 失效
$Device and method for fabricating diffractive gratings$
标题翻译：用于制造衍射光栅的装置和方法
公开(公告)号：US06676846B2
公开(公告)日：2004-01-13
申请号：US10339386
申请日：2003-01-09
申请人： Dong-Soo Bang
发明人： Dong-Soo Bang
IPC分类号： H01L2100
CPC分类号： G02B5/1857
摘要： There is provided a grating fabrication device and method to form gratings on a semiconductor substrate. The substrate is loaded into a reactor filled with an etchant solution, and an array of parallel light of interference light with different periods is projected onto the substrate to etch the portion of the substrate that is exposed to the light via an oxidation-reduction reaction. At the same time, the inclination angle of the substrate is selectively varied to obtain the different grating periods.
摘要翻译：提供了一种在半导体衬底上形成光栅的光栅制造装置和方法。将衬底装载到填充有蚀刻剂溶液的反应器中，并且将具有不同周期的干涉光的平行光阵列投影到衬底上以通过氧化还原反应蚀刻暴露于光的衬底的部分。同时，选择性地改变衬底的倾斜角以获得不同的光栅周期。

5. 发明授权

US06547919B2 Device and method for fabricating diffractive gratings 失效
$Device and method for fabricating diffractive gratings$
公开(公告)号：US06547919B2
公开(公告)日：2003-04-15
申请号：US09827874
申请日：2001-04-06
申请人： Dong-Soo Bang
发明人： Dong-Soo Bang
IPC分类号： H01L2100
CPC分类号： G02B5/1857
摘要： There is provided a grating fabrication device and method to form gratings on a semiconductor substrate. The substrate is loaded into a reactor filled with an etchant solution, and an array of parallel light of interference light with different periods is projected onto the substrate to etch the portion of the substrate that is exposed to the light via an oxidation-reduction reaction. At the same time, the inclination angle of the substrate is selectively varied to obtain the different grating periods.

6. 发明授权

US5238498A Open tube-type impurity-diffusion apparatus for simultaneously diffusing impurities into a plurality of wafers subjected to a common environment, for producing a mass of semiconductor chips 失效
标题翻译：开放管型杂质扩散装置，用于同时将杂质扩散到经受共同环境的多个晶片中，用于生产大量半导体芯片
公开(公告)号：US5238498A
公开(公告)日：1993-08-24
申请号：US733180
申请日：1991-07-19
申请人： Dong-Soo Bang , Jun-Young Kim
发明人： Dong-Soo Bang , Jun-Young Kim
IPC分类号： H01L21/22 , C23C8/10
CPC分类号： C23C8/10
摘要： An open-tube type impurity diffusion apparatus for simultaneously diffusing impurities into a plurality of wafers in a same controlled environment. The apparatus includes a diffusion box including a diffusion source, a diffusion box for holding a plurality of wafers, a slider including a body having a perforated portion and non-perforated portion and heaters disposed in a furnace. Because the apparatus can be used to simultaneously diffuse impurities into a plurality of wafers once, a mass of semiconductors can be produced, production cost and time can be decreased, and deviation of the wafer characteristics from wafer to wafer within a batch can be minimized.
摘要翻译：一种开放式杂质扩散装置，用于在相同的受控环境中同时将杂质扩散到多个晶片。该装置包括扩散箱，其包括扩散源，用于保持多个晶片的扩散箱，包括具有穿孔部分的主体和非穿孔部分的滑块以及设置在炉中的加热器。由于该装置可以同时将杂质扩散到多个晶片中，所以可以产生大量的半导体，可以降低生产成本和时间，并且可以最大限度地减少批次内的晶片与晶圆之间的偏离。

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