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    • 3. 发明申请
    • SEMICONDUCTOR DEVICES HAVING MULTI-WIDTH ISOLATION LAYER STRUCTURES
    • 具有多宽隔离层结构的半导体器件
    • US20130126814A1
    • 2013-05-23
    • US13544484
    • 2012-07-09
    • Dae-Won KimYong-Kwan Kim
    • Dae-Won KimYong-Kwan Kim
    • H01L45/00
    • H01L45/06H01L27/2409H01L45/141H01L45/1625
    • According to example embodiments, there is provided a semiconductor device including a substrate and an isolation layer structure. The substrate includes an active region having an upper active pattern and a lower active pattern on the upper active pattern. The active region has a first aspect ratio larger than about 13:1 and a second aspect ratio smaller than about 13:1. The first aspect ratio is defined as a ratio of a sum of heights of the upper active pattern and the lower active pattern with respect to a width of the upper active pattern. The second aspect ratio is defined as a ratio of the sum of the heights of the upper active pattern and the lower active pattern with respect to a width of the lower active pattern. The isolation layer structure is adjacent to the active region.
    • 根据示例性实施例,提供了一种包括衬底和隔离层结构的半导体器件。 衬底包括在上活性图案上具有上活性图案和下活性图案的有源区。 有源区具有大于约13:1的第一长宽比和小于约13:1的第二纵横比。 第一宽高比被定义为上活性图案和下活性图案的高度之和相对于上活性图案的宽度的比率。 第二纵横比被定义为上活动图案和下活动图案的高度之和相对于下活动图案的宽度的比率。 隔离层结构与有源区相邻。
    • 7. 发明申请
    • PROJECTOR WITH OFFSET BETWEEN PROJECTION OPTICAL SYSTEM AND DISPLAY UNIT
    • 投影机投影光学系统和显示单元之间的偏移
    • US20130044295A1
    • 2013-02-21
    • US13571038
    • 2012-08-09
    • Seong-Ha PARKYong-Kwan KimDong-Hi Lee
    • Seong-Ha PARKYong-Kwan KimDong-Hi Lee
    • G03B21/28
    • H04N9/3173G03B21/2066G03B21/208
    • A projector for projecting out lights forming an image on an external screen includes at least one light source configured to output a light; a display unit having a plurality of pixel elements and configured to form an image by controlling the pixel elements according to a driving signal; an illumination optical system having at least one lens and mirror arranged on a first optical axis, and configured to output the light output from the light source to the display unit through the mirror; and a projection optical system having at least one lens arranged on a second optical axis intersecting the first optical axis, and configured to externally output the light output from the display unit. A preset offset is provided between the second optical axis of the projection optical system and the central axis of the display unit.
    • 一种用于将形成图像的光投射到外部屏幕上的投影仪包括:至少一个被配置为输出光的光源; 显示单元,具有多个像素元素,并且被配置为根据驱动信号控制像素元素来形成图像; 照明光学系统,其具有布置在第一光轴上的至少一个透镜和反射镜,并且被配置为通过反射镜将从光源输出的光输出到显示单元; 以及投影光学系统,其具有布置在与所述第一光轴相交的第二光轴上的至少一个透镜,并且被配置为从所述显示单元输出的光从外部输出。 在投影光学系统的第二光轴和显示单元的中心轴之间设置预置偏移。
    • 9. 发明申请
    • METHOD FOR PRODUCING FILM OF VANADIUM PENTOXIDE NANOWIRES HAVING IMPROVED ALIGNMENT AND VANADIUM PENTOXIDE NANOWIRE FILM PRODUCED THEREBY
    • US20090162272A1
    • 2009-06-25
    • US12029596
    • 2008-02-12
    • Jae-Hyun ParkJeong-Sook HaYong-Kwan Kim
    • Jae-Hyun ParkJeong-Sook HaYong-Kwan Kim
    • B05D1/20C01G31/02B05D3/02
    • B05D1/18B05D1/202B05D1/204B82Y30/00B82Y40/00C01G31/02C01P2004/16H01M4/485Y10S977/89Y10S977/892
    • A method for producing a film of vanadium pentoxide nanowires having improved alignment is provided. The method comprises the steps of a) preparing a solution of vanadium pentoxide (V2O5) nanowires by a sol-gel method; b) diluting the solution of vanadium pentoxide nanowires with water and feeding the dilute aqueous solution into a Langmuir-Blodgett trough; c) adding a dispersant to the dilute aqueous solution of vanadium pentoxide nanowires; d) diluting a solution of a dioctadecyldimethylammonium halide with an organic solvent, applying the dioctadecyldimethylammonium halide solution to the surface of the dilute aqueous solution of vanadium pentoxide nanowires in the Langmuir-Blodgett trough, and allowing the solutions to stand to disperse the dioctadecyldimethylammonium halide solution in the Langmuir-Blodgett trough; e) controlling the surface pressure of the dioctadecyldimethylammonium halide solution using barriers mounted on the Langmuir-Blodgett trough; f) affixing a substrate to a dipping arm of the Langmuir-Blodgett trough and bringing the substrate into contact with the surface of the dioctadecyldimethylammonium halide solution; and g) separating the substrate from the dipping arm. According to the method, the alignment of the nanowires can be markedly improved by sol-gel synthesis, the need for subsequent washing can be eliminated, which contributes to the simplification of the production process, and the nanowires can be cut to desired lengths in a simple manner, thereby ensuring the reproducibility of a device using the nanowire film and achieving improved characteristics of the device. Further provided are a vanadium pentoxide nanowire film produced by the method and a nanowire device comprising the nanowire film. The nanowire device can find application in various fields, including field effect transistors and a variety of sensors, due to its excellent characteristics and reproducibility.
    • 10. 发明授权
    • Semiconductor devices having multi-width isolation layer structures
    • 具有多宽度隔离层结构的半导体器件
    • US08710479B2
    • 2014-04-29
    • US13544484
    • 2012-07-09
    • Dae-Won KimYong-Kwan Kim
    • Dae-Won KimYong-Kwan Kim
    • H01L29/02
    • H01L45/06H01L27/2409H01L45/141H01L45/1625
    • According to example embodiments, there is provided a semiconductor device including a substrate and an isolation layer structure. The substrate includes an active region having an upper active pattern and a lower active pattern on the upper active pattern. The active region has a first aspect ratio larger than about 13:1 and a second aspect ratio smaller than about 13:1. The first aspect ratio is defined as a ratio of a sum of heights of the upper active pattern and the lower active pattern with respect to a width of the upper active pattern. The second aspect ratio is defined as a ratio of the sum of the heights of the upper active pattern and the lower active pattern with respect to a width of the lower active pattern. The isolation layer structure is adjacent to the active region.
    • 根据示例性实施例,提供了一种包括衬底和隔离层结构的半导体器件。 衬底包括在上活性图案上具有上活性图案和下活性图案的有源区。 有源区具有大于约13:1的第一长宽比和小于约13:1的第二纵横比。 第一宽高比被定义为上活性图案和下活性图案的高度之和相对于上活性图案的宽度的比率。 第二纵横比被定义为上活动图案和下活动图案的高度之和相对于下活动图案的宽度的比率。 隔离层结构与有源区相邻。