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    • 1. 发明授权
    • Method for fabricating a planar buried heterostructure laser diode
    • 制造平面埋入异质结激光二极管的方法
    • US5665612A
    • 1997-09-09
    • US512224
    • 1995-08-07
    • Jung-Kee LeeDong-Hoon JangJeong-Soo KimKyung-Hyun Park
    • Jung-Kee LeeDong-Hoon JangJeong-Soo KimKyung-Hyun Park
    • H01S5/00H01S5/20H01S5/227H01S5/30H01S5/343H01L21/265
    • B82Y20/00H01S5/227H01S5/2081H01S5/2275H01S5/34306H01S5/34313
    • Disclosed is a method for fabricating a planar buried heterostructure laser diode, comprising the steps of sequentially forming a first clad layer, an undoped active layer and a second clad layer on a substrate so as to complete a first crystal growth; forming a patterned mask layer on the second clad layer; non-selectively etching the second clad layer, the active layer, the first clad layer and the substrate using the mask layer as an etching mask; selectively etching the substrate and the first and second layers; sequentially forming a first and second current blocking layers on a structure formed by the selective etching step so as to complete a second crystal growth; sequentially forming a third clad layer and an ohmic contact layer thereon after removal of the mask layer so as to complete a third crystal growth; and forming a first electrode on a rear surface of the substrate and forming a second electrode on a surface of the third clad layer. By the method, a leakage current induced in an interface between the active layer and the first current blocking layer provided therein can be reduced in proportion to a distance between the active layer and the second current blocking layer formed on the first current blocking layer, and therefore performance of the laser diode can be enhanced.
    • 公开了一种制造平面埋置异质结激光二极管的方法,包括以下步骤:在衬底上依次形成第一覆层,未掺杂有源层和第二覆层,以完成第一晶体生长; 在所述第二覆盖层上形成图案化掩模层; 使用掩模层作为蚀刻掩模,非选择性地蚀刻第二覆盖层,有源层,第一覆盖层和衬底; 选择性地蚀刻基板和第一和第二层; 在通过选择性蚀刻步骤形成的结构上依次形成第一和第二电流阻挡层,以完成第二晶体生长; 在除去掩模层之后依次形成第三覆层和欧姆接触层,以完成第三晶体生长; 以及在所述基板的后表面上形成第一电极,并在所述第三包覆层的表面上形成第二电极。 通过该方法,可以在有源层和其中设置的第一电流阻挡层之间的界面中感应的漏电流与形成在第一电流阻挡层上的有源层和第二电流阻挡层之间的距离成比例地减小,以及 因此可以提高激光二极管的性能。
    • 6. 发明授权
    • Pin capacitor of semiconductor device and method for fabricating the same
    • 半导体器件的引脚电容器及其制造方法
    • US08659063B2
    • 2014-02-25
    • US12963228
    • 2010-12-08
    • Jeong-Soo Kim
    • Jeong-Soo Kim
    • H01L27/01
    • H01L21/02H01L29/94
    • A pin capacitor of a semiconductor device includes a first isolation layer formed in a substrate and defining a dummy active area, a plurality of gates formed over the first isolation layer, a spacer formed at both sidewalls of each of the gates, and a plug formed over the dummy active area and in contact with the spacer. The substrate and the plug are coupled to a ground unit, and the gate is coupled to a pad unit. That is, the pin capacitor includes a first capacitor including the gate, the isolation layer, and the substrate and a second capacitor including the gate, the spacer, and the plug, which are coupled in parallel to each other.
    • 半导体器件的pin电容器包括形成在衬底中并限定虚拟有源区的第一隔离层,形成在第一隔离层上的多个栅极,形成在每个栅极的两个侧壁处的隔离物,以及形成的插塞 在虚拟有源区域上并与间隔物接触。 衬底和插头耦合到接地单元,并且栅极耦合到衬垫单元。 也就是说,引脚电容器包括包括栅极,隔离层和衬底的第一电容器和包括彼此并联耦合的栅极,间隔物和插塞的第二电容器。
    • 8. 发明授权
    • Method for preparing DL-&agr;-tocopherol with a high yield and high purity
    • 以高产率和高纯度制备DL-α-生育酚的方法
    • US06441200B1
    • 2002-08-27
    • US09711824
    • 2000-11-13
    • Sijoon LeeJeong-Soo KimYoung-Seek YoonMyung-Jun KimJun-Tae ChoiByong-Sung Kwak
    • Sijoon LeeJeong-Soo KimYoung-Seek YoonMyung-Jun KimJun-Tae ChoiByong-Sung Kwak
    • C07D31172
    • C07D311/74Y02P20/584
    • Disclosed is a method for preparing DL-&agr;-tocopherol through the condensation of isophytol or phytol derivatives and trimethylhydroquinone (TMHQ) using a catalyst system comprising a divalent metal halogen compound, silica gel and/or silica-alumina, and a Brönsted acid. Isophytol or phytol derivatives are slowly added to trimethylhydroquinone for the condensation thereof at 80 to 135° C. over 30 to 60 min in the presence of the metal halogen and the silica gel and/or silica-alumina. In the presence of the Brönsted acid, the intermediates are converted into the product. The silica gel and/or silica-alumina is washed with a polar solvent for recovery. The catalyst system can remarkably reduce side-reactions upon the condensation of isophytol or phytol derivatives and TMHQ, thus producing DL-&agr;-tocopherol with a high purity at a high yield. Also, the catalyst system can be regenerated in succession because of its being able to avoid the decrease of catalytic activity attributed to the adsorption of organic materials; thus reducing the production cost of DL-&agr;-tocopherol and the quantity of industrial wastes generated. With these advantages, the catalyst system can be effectively used in preparing highly pure DL-&agr;-tocopherol at a high yield on a commercial scale.
    • 公开了使用包含二价金属卤素化合物,硅胶和/或二氧化硅 - 氧化铝和布朗斯台德酸的催化剂体系通过异植醇或植醇衍生物和三甲基氢醌(TMHQ)的缩合制备DL-α-生育酚的方法。 在金属卤素和硅胶和/或二氧化硅 - 氧化铝的存在下,将异佛尔酮或植醇衍生物缓慢加入到三甲基对苯二酚中使其在80至135℃下冷凝30至60分钟。 在布朗斯台德酸的存在下,将中间体转化成产物。 用极性溶剂洗涤硅胶和/或二氧化硅 - 氧化铝以进行回收。 催化剂体系可以显着降低异麦芽糖醇或植醇衍生物和TMHQ冷凝时的副反应,从而以高产率生产高纯度的DL-α-生育酚。 而且,由于能够避免由于有机材料的吸附引起的催化活性的降低,所以可以连续再生催化剂体系。 从而降低DL-α-生育酚的生产成本和产生的工业废物的数量。 利用这些优点,催化剂体系可以有效地以高产率在工业规模上制备高纯度的DL-α-生育酚。
    • 9. 发明授权
    • Method for preparing DL-&agr;-tocopherol with high yield
    • 高产量制备DL-α-生育酚的方法
    • US06384245B1
    • 2002-05-07
    • US09697615
    • 2000-10-26
    • Jeong-Soo KimHeui-Young CheongSijoon Lee
    • Jeong-Soo KimHeui-Young CheongSijoon Lee
    • C07D31172
    • C07D311/72
    • Disclosed is a method for preparing DL-&agr;-tocopherol with a high yield through the condensation of isophytol or phytol derivatives with trimethylhydroquinone (TMHQ) in the presence of a Zn—Al heterogeneous catalyst system. At 80 to 120° C., the condensation is carried out for 2 to 7 hours in the presence of a Zn(II) ion-coated alumina-silica catalyst in an n-heptane solvent. The synthetic Zn(II) ion-coated silica-alumina synthetic catalyst system can remarkably reduce side-reactions upon the condensation of isophytol or phytol derivatives and TMHQ, thus producing DL-&agr;-tocopherol with a high purity at a high yield. In addition, the catalyst system is greatly convenient to handle and therefore apply for continuous reactions for the preparation of DL-&agr;-tocopherol. With these advantages, the catalyst system can be effectively used in preparing highly pure DL-&agr;-tocopherol at a high yield on a commercial scale.
    • 公开了通过在Zn-Al多相催化剂体系的存在下通过异山梨糖醇或植醇醇衍生物与三甲基氢醌(TMHQ)的缩合制备高产率的DL-α-生育酚的方法。 在80〜120℃下,在Zn(II)离子涂覆的氧化铝 - 二氧化硅催化剂存在下,在正庚烷溶剂中进行缩合2〜7小时。 合成的Zn(II)离子涂覆的二氧化硅 - 氧化铝合成催化剂体系可以显着降低异植醇或植醇衍生物和TMHQ冷凝时的副反应,从而以高产率生产高纯度的DL-α-生育酚。 此外,催化剂体系非常方便处理,因此适用于制备DL-α-生育酚的连续反应。 利用这些优点,催化剂体系可以有效地以高产率在工业规模上制备高纯度的DL-α-生育酚。