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1. 发明授权

US4866500A Integrated light-triggered and light-quenched static induction thyristor and making method thereof 失效
标题翻译：集成光触发和光淬火静态感应晶闸管及其制作方法
公开(公告)号：US4866500A
公开(公告)日：1989-09-12
申请号：US100368
申请日：1987-09-23
申请人： Jun-ichi Nishizawa , Takashige Tamamushi , Ken-ichi Nonaka
发明人： Jun-ichi Nishizawa , Takashige Tamamushi , Ken-ichi Nonaka
IPC分类号： H01L29/74 , H01L21/332 , H01L27/144 , H01L29/08 , H01L29/739 , H01L29/744 , H01L31/111 , H03K17/78
CPC分类号： H01L31/1116 , H01L27/1443 , H01L29/0834 , H01L29/7392
摘要： An integrated light-triggered and light-quenched static induction thyristor and fabrication process thereof adapted in such a manner that an integrated SIPT operates in the normal mode in order to enhance current gain, tail current generated at the light-quenching time is reduced in order to enhance turn-off gain, and a buried-gate type of light-triggered static induction thyristor and a photo-darlington circuit composed of a first and second static induction phototransistors are integrated on a high-resistivity substrate in order to permit manufacturing said thyristor compact as a whole in facilitated processes.
摘要翻译：一种集成的光触发和轻型静态感应晶闸管及其制造方法，其以集成SIPT在正常模式下操作以增强电流增益的方式进行调节，从而按照顺序减少在光猝灭时间产生的尾流电流以提高关断增益，并且在高电阻率基板上集成了由第一和第二静电感应光电晶体管组成的掩埋栅型光触发静电感应晶闸管和光达林顿电路，以便制造所述晶闸管紧凑的整体在便利的过程中。

2. 发明授权

US4914043A Method of making an integrated light-triggered and light-quenched static induction thyristor 失效
标题翻译：制造集成光触发和光淬火静电感应晶闸管的方法
公开(公告)号：US4914043A
公开(公告)日：1990-04-03
申请号：US338271
申请日：1989-04-14
申请人： Jun-ichi Nishizawa , Takashige Tamamushi , Ken-ichi Nonaka
发明人： Jun-ichi Nishizawa , Takashige Tamamushi , Ken-ichi Nonaka
IPC分类号： H01L29/74 , H01L21/332 , H01L27/144 , H01L29/08 , H01L29/739 , H01L29/744 , H01L31/111 , H03K17/78
CPC分类号： H01L31/1116 , H01L27/1443 , H01L29/0834 , H01L29/7392
摘要： An integrated light-triggered and light-quenched static induction thyristor and fabrication process thereof adapted in such a manner that an integrated SIPT operates in the normal mode in order to enhance current gain, tail current generated at the light-quenching time is reduced in order to enhance turn-off gain, and an buried-gate type of light-triggered static induction thyristor and a photo-darlington circuit composed of a first and second static induction phototransistors are integrated on a high-resistivity substrate in order to permit manufacturing said thyristor compact as a whole in facilitated processes.

3. 发明授权

US5017991A Light quenchable thyristor device 失效
标题翻译：光淬火晶闸管器件
公开(公告)号：US5017991A
公开(公告)日：1991-05-21
申请号：US259438
申请日：1988-10-14
申请人： Jun-ichi Nishizawa , Takashige Tamamushi , Ken-ichi Nonaka
发明人： Jun-ichi Nishizawa , Takashige Tamamushi , Ken-ichi Nonaka
IPC分类号： H01L29/10 , H01L29/739 , H01L29/74 , H01L29/744 , H01L31/10 , H01L31/111 , H02M1/08 , H03K17/78 , H03K17/79
CPC分类号： H01L29/102 , H01L29/1016 , H01L29/1066 , H01L29/7392 , H01L29/744 , H01L31/1113 , H03K17/79
摘要： A thyristor device comprising an SI (Static induction) thyristor or beam base thyristor and an SIT (static induction transistor) or SIT-mode bipolar transistor connected to the gate of the thyristor in order to make it possible to turn-on and-off a direct current and voltage at a high speed with a light. In the thyristor part, the SIT gate structure or SIT-mode beam base structure exists in the first gate or base region or second gate or base region so that, at the time of the triggering operation, a very high switching efficiency will be obtained.
摘要翻译：一种晶闸管器件，其包括连接到晶闸管的栅极的SI（静态感应）晶闸管或光束基极晶闸管和SIT（静态感应晶体管）或SIT模式双极晶体管，以便使得能够导通和断开直流电和电压高速带光。在晶闸管部分中，在第一栅极或基极区域或第二栅极或基极区域中存在SIT栅极结构或SIT模式波束基极结构，使得在触发操作时将获得非常高的开关效率。

4. 发明授权

US4686555A Solid state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4686555A
公开(公告)日：1987-08-11
申请号：US556347
申请日：1983-11-30
申请人： Atsushi Yusa , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
发明人： Atsushi Yusa , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
IPC分类号： H01L27/146 , H01L29/772 , H01L31/112 , H01L31/113 , H04N5/30 , H04N5/335 , H01L27/14 , H01L31/00
CPC分类号： H01L29/7722 , H01L27/14679 , H01L31/1126 , H01L31/1136 , H04N5/30
摘要： A solid state image sensor comprising static induction transistors each forming a picture element.Each static induction transistor in the solid state image sensor has a lateral structure in which the source and drain regions are formed by surface regions provided on the same side in an epitaxial layer forming the channel region and a signal charge storage gate region are formed by a buried gate region provided under the channel region and a surface gate region provided on the channel region, so that the source-drain current flows in parallel to the surface of epitaxial layer and is effectively controlled between the buried and surface gate regions.
摘要翻译：一种固态图像传感器，包括各自形成像素的静态感应晶体管。固态图像传感器中的每个静态感应晶体管具有横向结构，其中源极和漏极区域由形成沟道区的外延层中设置在同一侧的表面区域形成，并且信号电荷存储栅极区域由掩埋栅极区域和设置在沟道区域上的表面栅极区域，使得源极 - 漏极电流平行于外延层的表面流动并且被有效地控制在掩埋栅极区域和表面栅极区域之间。

5. 发明授权

US4626916A Solid state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US4626916A
公开(公告)日：1986-12-02
申请号：US556050
申请日：1983-11-29
申请人： Toyokazu Mizoguchi , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
发明人： Toyokazu Mizoguchi , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
IPC分类号： H01L27/14 , H01L27/146 , H04N5/30 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/357 , H04N5/374 , H04N3/14
CPC分类号： H04N5/30 , H01L27/14679 , H04N3/1512
摘要： A solid state image pickup device having a shutter function is disclosed. The device comprises a plurality of picture cells each having a static induction transistor arranged in a matrix. The device further comprises a plurality of gate signal lines for simultaneously supplying gate signals to the picture cells placed on respective rows of the matrix, a vertical scanning register for generating and scanning the gate signals, a plurality of signal readout lines for reading out light signals stored in the picture cells placed on respective columns of the matrix, a shift register for simultaneously and temporarily storing read out signals and converting them into time series signals, a device connected between the signal readout means and the temporary storage means for controlling the connection therebetween.
摘要翻译：公开了一种具有快门功能的固态图像拾取装置。该装置包括多个图形单元，每个图形单元具有以矩阵形式布置的静态感应晶体管。该装置还包括多个栅极信号线，用于同时向放置在矩阵的相应行上的图像单元提供栅极信号，用于产生和扫描栅极信号的垂直扫描寄存器，用于读出光信号的多条信号读出线存储在放置在矩阵的相应列的图像单元中的移位寄存器，用于同时并临时存储读出的信号并将其转换为时间序列信号的移位寄存器，连接在信号读出装置和用于控制其间的连接的临时存储装置之间的装置。

6. 发明授权

US4408304A Semiconductor memory 失效
标题翻译：半导体存储器
公开(公告)号：US4408304A
公开(公告)日：1983-10-04
申请号：US260297
申请日：1981-05-04
申请人： Jun-ichi Nishizawa , Ohmi Tadahiro , Takashige Tamamushi
发明人： Jun-ichi Nishizawa , Ohmi Tadahiro , Takashige Tamamushi
IPC分类号： G11C11/405 , G11C11/402 , H01L21/8242 , H01L27/108 , G11C11/40
CPC分类号： G11C11/402 , H01L27/108 , H01L29/7841
摘要： A semiconductor memory is provided with a hook structure composed of first to fourth regions and is capable of non-destructive readout. The third and fourth regions of the hook structure are both made floating and each form one of main electrode regions of each of a write and/or refresh transistor and a readout transistor. Carriers which are injected from the other main electrode region of the write transistor are stored as excess majority carriers in the third region and majority carriers of the fourth region flow out therefrom into the first region via the third and second regions, in consequence of which the fourth region lacks in the majority carrier and voltages of the floating third and fourth regions vary. The voltage variation of the fourth region is read out by the readout transistor. The excess majority carriers stored in the third region flow out therefrom into the other main electrode region of the write transistor and become extinct when it operates as a refresh transistor.
摘要翻译：半导体存储器具有由第一至第四区域构成的钩状结构，能够进行非破坏性读出。钩结构的第三和第四区域都浮动，并且每个形成写入和/或刷新晶体管和读出晶体管中的每一个的主电极区域中的一个。从写入晶体管的另一个主电极区域注入的载体作为过量多数载流子存储在第三区域中，第四区域的多数载流子经由第三和第二区域流出到第一区域，由此，第四区域缺乏多数载波，浮动的第三和第四区域的电压变化。第四区域的电压变化由读出晶体管读出。存储在第三区域中的多余载流子从其流出到写入晶体管的另一个主电极区域中，并且当其作为刷新晶体管工作时，其消失。

7. 发明授权

US5021936A PWM power converter using mixed bipolar and static induction transistors 失效
标题翻译： PWM功率转换器采用混合双极和静态感应晶体管
公开(公告)号：US5021936A
公开(公告)日：1991-06-04
申请号：US545148
申请日：1990-06-28
申请人： Jun-ichi Nishizawa , Takashige Tamamushi , Koichi Mitamura , Hiroo Takahashi , Kiyoo Mitsui , Mitsuo Ikehara , Toyota Wako , Sinpei Maruyama
发明人： Jun-ichi Nishizawa , Takashige Tamamushi , Koichi Mitamura , Hiroo Takahashi , Kiyoo Mitsui , Mitsuo Ikehara , Toyota Wako , Sinpei Maruyama
IPC分类号： H02M1/00 , H02M1/38 , H02M7/5387
CPC分类号： H02M1/38 , H02M7/5387
摘要： This invention relates to a PWM power converter for switching a plurality of bridge-connected semiconductor switching elements based on PWM signals. As the semiconductor switching elements, elements with a low ON voltage and small conduction loss, and elements with a small switching loss and capable of high-speed switching are combined to improve power conversion efficiency.

8. 发明授权

US4651180A Semiconductor photoelectric transducer 失效
标题翻译：半导体光电传感器
公开(公告)号：US4651180A
公开(公告)日：1987-03-17
申请号：US559763
申请日：1983-12-09
申请人： Jun-ichi Nishizawa , Takashige Tamamushi , Kaoru Motoya
发明人： Jun-ichi Nishizawa , Takashige Tamamushi , Kaoru Motoya
IPC分类号： H01L31/10 , H01L27/146 , H01L31/112 , H01L31/113 , H01L29/80
CPC分类号： H01L27/14679 , H01L31/1126 , H01L31/1136
摘要： The present invention relates to a semiconductor FET or SIT type photoelectric transducer comprising a source and a drain which are main electrode regions of high impurity density; a high resistivity or intrinsic semiconductor region of the same conductivity type as the main electrode regions and formed therebetween as a current path; and a plurality of gate regions formed by high impurity density regions reverse in conductivity from the main electrode regions and formed in the current path, for controlling a main current; wherein the distance W.sub.1 between a first one of the gate regions on both sides of the source and the source or the drain is greater than the distance W.sub.2 between the other gate region and the source or drain (W.sub.1 >W.sub.2), and wherein the size of the first gate region is smaller than the diffusion length of carriers to be stored in the first gate region. Briefly stated, the present invention is intended to enhance the function of the first gate by selecting the size of the first gate region for storing optical information within the diffusion length of the carriers stored therein, in addition to the selection of the aforementioned distances W.sub.1 and W.sub.2.
摘要翻译：本发明涉及包括源极和漏极的半导体FET或SIT型光电转换器，它们是高杂质密度的主电极区域; 与主电极区域相同导电类型的高电阻率或本征半导体区域，并作为电流路径形成; 以及多个栅极区域，其由与所述主电极区域的导电性相反的高杂质浓度区域形成，并形成在所述电流路径中，用于控制主电流; 其中源极和源极或漏极两侧的栅极区域中的第一栅极区域之间的距离W1大于另一栅极区域与源极或漏极之间的距离W2（W1> W2），并且其中尺寸的第一栅极区域小于要存储在第一栅极区域中的载流子的扩散长度。简要地说，本发明是为了通过选择用于存储存储在其中的载波的漫射长度内的光学信息的第一栅极区域的尺寸来增强第一栅极的功能，以及选择上述距离W1和 W2。

9. 发明授权

US4593320A Two-dimensional solid-state image pickup device 失效
标题翻译：二维固态摄像装置
公开(公告)号：US4593320A
公开(公告)日：1986-06-03
申请号：US714677
申请日：1985-03-21
申请人： Jun-ichi Nishizawa , Takashige Tamamushi
发明人： Jun-ichi Nishizawa , Takashige Tamamushi
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/372 , H04N5/374 , H04N3/12
CPC分类号： H04N3/1512
摘要： A two-dimensional solid-state image pickup device wherein, in order to make it possible to have a high light detecting sensitivity even to feeble lights and to stably and uniformly detect picture images, picture elements each formed of a static induction transistor having an optical gain of 10.sup.6 to 10.sup.8 and able to detect even such feeble lights as of about 10.sup.-4 .mu.W/cm.sup.2 and a gate capacitor are arranged in a matrix to be a gate accumulating system capable of two-dimensional reading out, the source regions of the respective static induction transistors are connected to common source lines, the respective source lines are connected to the ground through parallelly connected source line selecting transistors and capacitors and the gates of the respective source line selecting transistors are connected respectively to vertical address lines so that, simultaneously with the selection of the vertical address lines, the source lines may be connected to the ground.
摘要翻译：一种二维固态摄像装置，其特征在于，为了使得即使是微弱的光也能够具有高的光检测灵敏度并且能够稳定和均匀地检测图像图像，每个由具有光学的静电感应晶体管形成的像素增益为106到108，并且能够检测到即使是大约10-4μW/ cm2的微弱光，并且栅极电容器以矩阵形式排列成能够二维读出的门积存系统，源区域各个静态感应晶体管连接到公共源极线，各个源极线通过并联连接的源极线选择晶体管和电容器连接到地，并且各个源极线选择晶体管的栅极分别连接到垂直地址线，与垂直地址线的选择同时，源极线可以连接到地面。

10. 发明授权

US4587562A Solid state image pick-up device 失效
标题翻译：固态摄像装置
公开(公告)号：US4587562A
公开(公告)日：1986-05-06
申请号：US555986
申请日：1983-11-29
申请人： Masaharu Imai , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
发明人： Masaharu Imai , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
IPC分类号： H01L27/146 , H04N5/30 , H04N5/335 , H04N5/353 , H04N5/357 , H04N3/14
CPC分类号： H04N5/30 , H01L27/14679
摘要： A solid state image pick-up device comprising a large number of picture cells arranged in a matrix. The picture cell comprises a first photoelectric conversion and readout SIT which comprises a gate region operating as a photoelectric conversion area and a second reset SIT which comprises a region (drain or source) electrically connected to the gate region of the first SIT, whereby the photoelectric charges stored in the gate regions of the first SITs of the picture cells in a matrix can be individually reset by means of the related second SITs.
摘要翻译：一种固态图像拾取装置，包括以矩阵形式布置的大量图像单元。图像单元包括第一光电转换和读出SIT，其包括作为光电转换区域操作的栅极区域和包括电连接到第一SIT的栅极区域的区域（漏极或源极）的第二复位SIT，由此光电可以通过相关的第二SIT来单独地重置存储在矩阵中的图像单元的第一SIT的栅极区域中的电荷。

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