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1. 发明授权

US4651180A Semiconductor photoelectric transducer 失效
标题翻译：半导体光电传感器
公开(公告)号：US4651180A
公开(公告)日：1987-03-17
申请号：US559763
申请日：1983-12-09
申请人： Jun-ichi Nishizawa , Takashige Tamamushi , Kaoru Motoya
发明人： Jun-ichi Nishizawa , Takashige Tamamushi , Kaoru Motoya
IPC分类号： H01L31/10 , H01L27/146 , H01L31/112 , H01L31/113 , H01L29/80
CPC分类号： H01L27/14679 , H01L31/1126 , H01L31/1136
摘要： The present invention relates to a semiconductor FET or SIT type photoelectric transducer comprising a source and a drain which are main electrode regions of high impurity density; a high resistivity or intrinsic semiconductor region of the same conductivity type as the main electrode regions and formed therebetween as a current path; and a plurality of gate regions formed by high impurity density regions reverse in conductivity from the main electrode regions and formed in the current path, for controlling a main current; wherein the distance W.sub.1 between a first one of the gate regions on both sides of the source and the source or the drain is greater than the distance W.sub.2 between the other gate region and the source or drain (W.sub.1 >W.sub.2), and wherein the size of the first gate region is smaller than the diffusion length of carriers to be stored in the first gate region. Briefly stated, the present invention is intended to enhance the function of the first gate by selecting the size of the first gate region for storing optical information within the diffusion length of the carriers stored therein, in addition to the selection of the aforementioned distances W.sub.1 and W.sub.2.
摘要翻译：本发明涉及包括源极和漏极的半导体FET或SIT型光电转换器，它们是高杂质密度的主电极区域; 与主电极区域相同导电类型的高电阻率或本征半导体区域，并作为电流路径形成; 以及多个栅极区域，其由与所述主电极区域的导电性相反的高杂质浓度区域形成，并形成在所述电流路径中，用于控制主电流; 其中源极和源极或漏极两侧的栅极区域中的第一栅极区域之间的距离W1大于另一栅极区域与源极或漏极之间的距离W2（W1> W2），并且其中尺寸的第一栅极区域小于要存储在第一栅极区域中的载流子的扩散长度。简要地说，本发明是为了通过选择用于存储存储在其中的载波的漫射长度内的光学信息的第一栅极区域的尺寸来增强第一栅极的功能，以及选择上述距离W1和 W2。

2. 发明授权

US4866500A Integrated light-triggered and light-quenched static induction thyristor and making method thereof 失效
标题翻译：集成光触发和光淬火静态感应晶闸管及其制作方法
公开(公告)号：US4866500A
公开(公告)日：1989-09-12
申请号：US100368
申请日：1987-09-23
申请人： Jun-ichi Nishizawa , Takashige Tamamushi , Ken-ichi Nonaka
发明人： Jun-ichi Nishizawa , Takashige Tamamushi , Ken-ichi Nonaka
IPC分类号： H01L29/74 , H01L21/332 , H01L27/144 , H01L29/08 , H01L29/739 , H01L29/744 , H01L31/111 , H03K17/78
CPC分类号： H01L31/1116 , H01L27/1443 , H01L29/0834 , H01L29/7392
摘要： An integrated light-triggered and light-quenched static induction thyristor and fabrication process thereof adapted in such a manner that an integrated SIPT operates in the normal mode in order to enhance current gain, tail current generated at the light-quenching time is reduced in order to enhance turn-off gain, and a buried-gate type of light-triggered static induction thyristor and a photo-darlington circuit composed of a first and second static induction phototransistors are integrated on a high-resistivity substrate in order to permit manufacturing said thyristor compact as a whole in facilitated processes.
摘要翻译：一种集成的光触发和轻型静态感应晶闸管及其制造方法，其以集成SIPT在正常模式下操作以增强电流增益的方式进行调节，从而按照顺序减少在光猝灭时间产生的尾流电流以提高关断增益，并且在高电阻率基板上集成了由第一和第二静电感应光电晶体管组成的掩埋栅型光触发静电感应晶闸管和光达林顿电路，以便制造所述晶闸管紧凑的整体在便利的过程中。

3. 发明授权

US4791396A Color image sensor 失效
公开(公告)号：US4791396A
公开(公告)日：1988-12-13
申请号：US772338
申请日：1985-08-28
申请人： Jun-ichi Nishizawa , Takashige Tamamushi , Istvan Barsony
发明人： Jun-ichi Nishizawa , Takashige Tamamushi , Istvan Barsony
IPC分类号： H01L27/146 , H01L31/112 , H04N5/335 , H04N5/355 , H04N5/357 , H01L29/80
CPC分类号： H01L31/1126 , H01L27/14679
摘要： The present invention relates generally to a photodetector, and more particularly to a photodetector formed by a static induction transistor. The present invention includes the following constituent elements:In the photodetector formed by a static induction transistor, an n.sup.+ -type buried layer is provided, as a drain or source region of the photodetector, for limiting the thickness of a high resistivity i-type layer between a p.sup.+ -type region forming a gate and a substrate. Letting the wavelength of light incident to the surface of the photodetector and an absorption coefficient for the incident light be represented by .lambda..sub.i and .alpha..sub.i (.lambda..sub.i), respectively, the distance between the in junction of the abrupt pin junction and the surface of the photodetector x.sub.i is ##EQU1## the ratio between the area A(.lambda..sub.i) of each gate portion for selectively detecting light of the specified wavelength .lambda..sub.i and the total area A.sub.tot of the gate is selected as follows: where e=2.718, .eta.(.lambda..sub.i) is required quantum efficiency for the wavelength .lambda..sub.i and R(.lambda..sub.i) 15 a refractive index for the wavelength .lambda..sub.i, and the thickness Wi of a depletion layer and the maximum depth x.sub.i.sbsb.max of the depletion layer for detecting the specified wavelength .lambda..sub.i are selected as follows: ##EQU2## thereby providing selective spectral responsivity for the specified wavelength .lambda..sub.i. Letting three specified wavelengths of blue, green and red light be represented by .lambda..sub.1, .lambda..sub.2 and .lambda..sub.3, the total area of the gate is A.sub.tot =A(.lambda..sub.1)+A(.lambda..sub.2)+A(.lambda..sub.3). Pixels for detecting the three wavelengths are arranged in a honeycomb-like pattern, as shown in FIG. 8. For obtaining the maximum photodetection sensitivity for the three wavelengths, for example, 460, 550 and 660 nm, the diffusion depth x.sub.jp + of the gate portions and the depletion layer width Wi between the gate and the n.sup.+ -type buried source region are selected as given below in Table 1: TABLE 1 ______________________________________ x.sub.i.sbsb.max Wi x.sub.jp.spsb.+.sbsb.max -x.sub.jn.spsb.+ .lambda. ______________________________________ B 0.63 .mu.m 0.4 0.2 3.0 460 nm G 1.53 .mu.m 0.9 0.5 2.2 550 R 3.57 .mu.m 2.3 1.3 0 660 ______________________________________

4. 发明授权

US4623909A Semiconductor photodetector 失效
标题翻译：半导体光电探测器
公开(公告)号：US4623909A
公开(公告)日：1986-11-18
申请号：US584351
申请日：1984-02-28
申请人： Jun-ichi Nishizawa , Takashige Tamamushi
发明人： Jun-ichi Nishizawa , Takashige Tamamushi
IPC分类号： H01L29/80 , H01L27/146 , H01L31/10 , H01L31/112 , H04N5/335 , H04N5/374 , H01L27/14 , H01L31/00
CPC分类号： H01L31/1126 , H01L27/14679
摘要： An improved semiconductor photodetector of a type implemented with static induction transistors, and a method for driving such a device, in which data can be read out in a nondestructive mode. The static induction transistors of which the semiconductor photodetector is composed each include a gate region which forms boundaries with a channel region and in which carriers generated in response to incident light are accumulated. A structure for suppressing the depletion of carriers accumulated in the gate regions during reading of data is provided for each of the gate regions. This structure may take the form of an insulating layer which forms a potential barrier along the boundary between the gate regions and the channel region.
摘要翻译：用静电感应晶体管实现的类型的改进的半导体光电探测器，以及用于驱动这种器件的方法，其中可以非破坏性地读出数据。其中组成半导体光电探测器的静感感晶体管每个都包括与沟道区形成边界的栅极区，并且其中积累响应于入射光产生的载流子。为每个栅极区域提供用于在读取数据期间抑制积聚在栅极区域中的载流子的耗尽的结构。该结构可以采取沿着栅极区域和沟道区域之间的边界形成势垒的绝缘层的形式。

5. 发明授权

US4531156A Solid state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US4531156A
公开(公告)日：1985-07-23
申请号：US556993
申请日：1983-12-01
申请人： Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi , Yasuo Arisawa
发明人： Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi , Yasuo Arisawa
IPC分类号： H01L27/14 , H01L27/146 , H04N5/30 , H04N5/335 , H04N5/353 , H04N3/15
CPC分类号： H01L27/14679 , H04N3/1556 , H04N5/30
摘要： A solid state image pickup device having an electronic shutter function is disclosed. The device comprises a plurality of picture cells each having a static induction transistor and arranged in a matrix, a plurality of vertical and horizontal scanning lines for scanning the cells, vertical and horizontal registers for generating scanning pulses which drive the vertical and horizontal scanning lines, a readout signal line for reading out light information stored in the cells, a reset signal line for resetting the cells, and a shutter speed control circuit for optionally setting in one frame period the timing of reset scanning pulses generated from a vertical register.
摘要翻译：公开了一种具有电子快门功能的固态图像拾取装置。该装置包括多个图形单元，每个图形单元具有静态感应晶体管并且以矩阵形式布置，用于扫描单元的多条垂直和水平扫描线，用于产生驱动垂直和水平扫描线的扫描脉冲的垂直和水平寄存器，用于读出存储在单元中的光信息的读出信号线，用于复位单元的复位信号线，以及快门速度控制电路，用于在一个帧周期中可选地设置从垂直寄存器产生的复位扫描脉冲的定时。

6. 发明授权

US5021936A PWM power converter using mixed bipolar and static induction transistors 失效
标题翻译： PWM功率转换器采用混合双极和静态感应晶体管
公开(公告)号：US5021936A
公开(公告)日：1991-06-04
申请号：US545148
申请日：1990-06-28
申请人： Jun-ichi Nishizawa , Takashige Tamamushi , Koichi Mitamura , Hiroo Takahashi , Kiyoo Mitsui , Mitsuo Ikehara , Toyota Wako , Sinpei Maruyama
发明人： Jun-ichi Nishizawa , Takashige Tamamushi , Koichi Mitamura , Hiroo Takahashi , Kiyoo Mitsui , Mitsuo Ikehara , Toyota Wako , Sinpei Maruyama
IPC分类号： H02M1/00 , H02M1/38 , H02M7/5387
CPC分类号： H02M1/38 , H02M7/5387
摘要： This invention relates to a PWM power converter for switching a plurality of bridge-connected semiconductor switching elements based on PWM signals. As the semiconductor switching elements, elements with a low ON voltage and small conduction loss, and elements with a small switching loss and capable of high-speed switching are combined to improve power conversion efficiency.

7. 发明授权

US4593320A Two-dimensional solid-state image pickup device 失效
标题翻译：二维固态摄像装置
公开(公告)号：US4593320A
公开(公告)日：1986-06-03
申请号：US714677
申请日：1985-03-21
申请人： Jun-ichi Nishizawa , Takashige Tamamushi
发明人： Jun-ichi Nishizawa , Takashige Tamamushi
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/372 , H04N5/374 , H04N3/12
CPC分类号： H04N3/1512
摘要： A two-dimensional solid-state image pickup device wherein, in order to make it possible to have a high light detecting sensitivity even to feeble lights and to stably and uniformly detect picture images, picture elements each formed of a static induction transistor having an optical gain of 10.sup.6 to 10.sup.8 and able to detect even such feeble lights as of about 10.sup.-4 .mu.W/cm.sup.2 and a gate capacitor are arranged in a matrix to be a gate accumulating system capable of two-dimensional reading out, the source regions of the respective static induction transistors are connected to common source lines, the respective source lines are connected to the ground through parallelly connected source line selecting transistors and capacitors and the gates of the respective source line selecting transistors are connected respectively to vertical address lines so that, simultaneously with the selection of the vertical address lines, the source lines may be connected to the ground.
摘要翻译：一种二维固态摄像装置，其特征在于，为了使得即使是微弱的光也能够具有高的光检测灵敏度并且能够稳定和均匀地检测图像图像，每个由具有光学的静电感应晶体管形成的像素增益为106到108，并且能够检测到即使是大约10-4μW/ cm2的微弱光，并且栅极电容器以矩阵形式排列成能够二维读出的门积存系统，源区域各个静态感应晶体管连接到公共源极线，各个源极线通过并联连接的源极线选择晶体管和电容器连接到地，并且各个源极线选择晶体管的栅极分别连接到垂直地址线，与垂直地址线的选择同时，源极线可以连接到地面。

8. 发明授权

US4587562A Solid state image pick-up device 失效
标题翻译：固态摄像装置
公开(公告)号：US4587562A
公开(公告)日：1986-05-06
申请号：US555986
申请日：1983-11-29
申请人： Masaharu Imai , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
发明人： Masaharu Imai , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
IPC分类号： H01L27/146 , H04N5/30 , H04N5/335 , H04N5/353 , H04N5/357 , H04N3/14
CPC分类号： H04N5/30 , H01L27/14679
摘要： A solid state image pick-up device comprising a large number of picture cells arranged in a matrix. The picture cell comprises a first photoelectric conversion and readout SIT which comprises a gate region operating as a photoelectric conversion area and a second reset SIT which comprises a region (drain or source) electrically connected to the gate region of the first SIT, whereby the photoelectric charges stored in the gate regions of the first SITs of the picture cells in a matrix can be individually reset by means of the related second SITs.
摘要翻译：一种固态图像拾取装置，包括以矩阵形式布置的大量图像单元。图像单元包括第一光电转换和读出SIT，其包括作为光电转换区域操作的栅极区域和包括电连接到第一SIT的栅极区域的区域（漏极或源极）的第二复位SIT，由此光电可以通过相关的第二SIT来单独地重置存储在矩阵中的图像单元的第一SIT的栅极区域中的电荷。

9. 发明授权

US4914043A Method of making an integrated light-triggered and light-quenched static induction thyristor 失效
标题翻译：制造集成光触发和光淬火静电感应晶闸管的方法
公开(公告)号：US4914043A
公开(公告)日：1990-04-03
申请号：US338271
申请日：1989-04-14
申请人： Jun-ichi Nishizawa , Takashige Tamamushi , Ken-ichi Nonaka
发明人： Jun-ichi Nishizawa , Takashige Tamamushi , Ken-ichi Nonaka
IPC分类号： H01L29/74 , H01L21/332 , H01L27/144 , H01L29/08 , H01L29/739 , H01L29/744 , H01L31/111 , H03K17/78
CPC分类号： H01L31/1116 , H01L27/1443 , H01L29/0834 , H01L29/7392
摘要： An integrated light-triggered and light-quenched static induction thyristor and fabrication process thereof adapted in such a manner that an integrated SIPT operates in the normal mode in order to enhance current gain, tail current generated at the light-quenching time is reduced in order to enhance turn-off gain, and an buried-gate type of light-triggered static induction thyristor and a photo-darlington circuit composed of a first and second static induction phototransistors are integrated on a high-resistivity substrate in order to permit manufacturing said thyristor compact as a whole in facilitated processes.

10. 发明授权

US4891682A Solid state image pick-up device having a number of static induction transistor image sensors 失效
标题翻译：具有多个静电感应晶体管图像传感器的固态摄像装置
公开(公告)号：US4891682A
公开(公告)日：1990-01-02
申请号：US557004
申请日：1983-12-01
申请人： Atsushi Yusa , Hidetoshi Yamada , Takashi Mizusaki , Jun-ichi Nishizawa , Takashige Tamamushi
发明人： Atsushi Yusa , Hidetoshi Yamada , Takashi Mizusaki , Jun-ichi Nishizawa , Takashige Tamamushi
IPC分类号： H01L27/146 , H04N5/30 , H04N5/335 , H04N5/353 , H04N5/355 , H04N5/369
CPC分类号： H04N3/1506 , H01L27/14679 , H04N3/1556
摘要： A solid state image pick-up device having a number of static induction transistor image sensors arranged in a matrix form, each static induction image sensor includes a drain region formed by an n+ substrate connected to the earth potential, a channel region formed by an n.sup.- epitaxial layer grown on the substrate, a ring-shaped p+ gate region formed in a surface of the epitaxial layer, an n+ source region formed in a part of the surface of the epitaxial layer surrounded by the ring-shaped gate region and a p+ overflow drain region formed in the surface of the substrate underneath the gate region. By adjusting a time duration of a shutter control signal having a positive voltage applied to the overflow drain region, a time period during which photocarriers, i.e. electrons are flown into the gate region and stored therein, can be controlled at will, and an electronic shutter function can be achieved.
摘要翻译：具有以矩阵形式布置的多个静电感应晶体管图像传感器的固态图像拾取装置，每个静态感应图像传感器包括由连接到地电位的n +基板形成的漏极区域，由n形成的沟道区域 - 在衬底上生长的外延层，形成在外延层的表面中的环形p +栅极区，形成在由环形栅极区包围的外延层的表面的一部分中的n +源极区和p + 溢出漏极区域形成在栅极区域下方的衬底的表面中。通过调整具有施加到溢出漏极区域的正电压的快门控制信号的持续时间，可以随意控制光载流子（即，电子流入栅极区域并存储在其中）的时间段，电子快门功能可以实现。

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