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1. 发明授权

US08426318B2 Method of setting thickness of dielectric and substrate processing apparatus having dielectric disposed in electrode 有权
标题翻译：设置在电极中的电介质和具有电介质的衬底处理装置的厚度的方法
公开(公告)号：US08426318B2
公开(公告)日：2013-04-23
申请号：US13171703
申请日：2011-06-29
申请人： Jun Oyabu , Takashi Kitazawa
发明人： Jun Oyabu , Takashi Kitazawa
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/3255
摘要： Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A/C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less.
摘要翻译：提供了一种设置电介质的厚度的方法，其通过使用等离子体来蚀刻在基板上的二氧化硅膜时抑制在电极中形成的电介质被消耗。在包括面对基座的上电极和在上电极中由二氧化硅形成的电介质的基板处理装置中，通过使用等离子体蚀刻在晶片上形成的二氧化硅膜，在等离子体中面向电介质的等离子体的电位基于施加到基座的偏置功率和室内的A / C比来估计在上部电极中未形成电介质的电介质，并且确定电介质的厚度，使得等离子体的电位通过将等离子体的估计电位乘以当电介质的容量和围绕电介质的表面周围产生的护套的容量组合时计算的容量降低系数为100eV以下。

2. 发明申请

US20060207314A1 Vacuum apparatus, method for measuring a leak rate thereof, program used in measuring the leak rate and storage medium storing the program 有权
标题翻译：真空装置，泄漏率测定方法，泄漏率测定程序和存储程序的存储介质
公开(公告)号：US20060207314A1
公开(公告)日：2006-09-21
申请号：US11368479
申请日：2006-03-07
申请人： Takashi Kitazawa , Atsushi Kobayashi , Kazuyuki Tezuka
发明人： Takashi Kitazawa , Atsushi Kobayashi , Kazuyuki Tezuka
IPC分类号： G01M3/04
CPC分类号： G01M3/3236
摘要： A leak rate measuring method measures a leak rate of a vacuum apparatus including a vacuum chamber in which an object is accommodated to be processed, a first gas exhaust pump connected to the vacuum chamber via a first valve serving as a conductance variable valve, and a second valve connected to a downstream side of the first gas exhaust pump in a gas flowing direction. In the leak rate measuring method, there is provided a circulating path branched from a gas exhaust path between the first gas exhaust pump and the second valve and connected to the vacuum pump to communicate therewith. The pressure inside the vacuum chamber is monitored by circulating a gas into the vacuum chamber through the circulating path with first gas exhaust pump under the condition that the first valve is set at a predetermined conductance and the second valve is closed.
摘要翻译：泄漏率测量方法测量包括被处理物体的真空室的真空装置的泄漏率，经由用作导电可变阀的第一阀连接到真空室的第一排气泵，以及第二阀在气体流动方向连接到第一排气泵的下游侧。在泄漏率测定方法中，设置有从第一排气泵和第二阀之间的排气路径分支并与真空泵连接的循环路径。通过第一气体排出泵将气体循环通过循环路径，在第一阀被设定在预定电导和第二阀关闭的条件下，将真空室内的气体循环进入监测真空室内的压力。

3. 发明授权

US06990747B2 Vacuum processing apparatus and substrate transfer method 有权
标题翻译：真空处理装置和基板转印方法
公开(公告)号：US06990747B2
公开(公告)日：2006-01-31
申请号：US10821971
申请日：2004-04-12
申请人： Toshihiko Kitoku , Shinji Niwa , Toshiki Hosaka , Takashi Kitazawa , Atsuo Sanda , Yoshitaka Sato
发明人： Toshihiko Kitoku , Shinji Niwa , Toshiki Hosaka , Takashi Kitazawa , Atsuo Sanda , Yoshitaka Sato
IPC分类号： F26B13/30
CPC分类号： H01L21/67253 , H01L21/67017 , H01L21/67167 , H01L21/67745
摘要： An etching processing apparatus 1 has a transfer chamber 2, a plurality of processing chambers 3 and 4, and a plurality of cassette chambers 7 and 8. Inside the transfer chamber 2, a transfer mechanism 14 is provided. A control device 17 pauses the operation of the vacuum pump 16 after closing an opening/closing valve 15 of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber 2 in which the transfer mechanism 14 is provided, when the operation of the transfer mechanism 14 is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.
摘要翻译：蚀刻处理装置1具有传送室2，多个处理室3和4以及多个盒室7和8。在传送室2内部设置有传送机构14。控制装置17在关闭真空排气机构的打开/关闭阀15之后暂停真空泵16的操作，该真空抽气机构在传送机构14的操作中真空抽出设置有传送机构14的传送室2 暂停预定时间或更长时间。因此，能够保持能量而不会降低生产率。

4. 发明授权

US08858754B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08858754B2
公开(公告)日：2014-10-14
申请号：US13114101
申请日：2011-05-24
申请人： Masato Horiguchi , Hiroshi Tsujimoto , Takashi Kitazawa
发明人： Masato Horiguchi , Hiroshi Tsujimoto , Takashi Kitazawa
IPC分类号： C23C16/509 , C23C16/455 , H01L21/306 , C23F1/00 , H01J37/32 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32633 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32477 , H01J37/32568 , H01J37/32651 , H01J37/32834
摘要： There is provided a plasma processing apparatus capable of easily exhausting a processing gas introduced in a space above a vertically movable upper electrode. The plasma processing apparatus includes a vertically movable upper electrode 120 installed at a ceiling wall 105 of a processing chamber 102 so as to face a lower electrode 111 and having a multiple number of discharge holes 123 for introducing the processing gas; a shield sidewall 310 configured to surround the electrodes and a processing space between the electrodes; an inner gas exhaust path 330 formed at the inside of the shield sidewall and configured to exhaust the atmosphere in the processing space; and an outer gas exhaust path 138 installed at the outside of the shield sidewall and configured to exhaust the processing gas introduced into a space between the upper electrode and the ceiling wall.
摘要翻译：提供了一种等离子体处理装置，其能够容易地排出在可垂直移动的上部电极上方的空间中引入的处理气体。该等离子体处理装置包括一个垂直移动的上部电极120，该上部电极120安装在处理室102的顶壁105处，以面对下部电极111并具有多个用于引入处理气体的排放孔123; 被配置为围绕电极的屏蔽侧壁310和电极之间的处理空间; 内部排气通道330，形成在屏蔽侧壁的内部，并构造成排出处理空间中的大气; 以及外部排气通道138，其安装在屏蔽侧壁的外侧，并被配置为排出引入到上电极和天花板壁之间的空间中的处理气体。

5. 发明申请

US20100244210A1 LEAD FRAME AND METHOD FOR MANUFACTURING CIRCUIT DEVICE USING THE SAME 有权
标题翻译：引线框架及使用其制造电路器件的方法
公开(公告)号：US20100244210A1
公开(公告)日：2010-09-30
申请号：US12415423
申请日：2009-03-31
申请人： Tetsuya Fukushima , Takashi Kitazawa
发明人： Tetsuya Fukushima , Takashi Kitazawa
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L23/49541 , H01L21/568 , H01L23/3107 , H01L23/49548 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/181 , H01L2924/30105 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： Provided are: a lead frame enabling efficient manufacturing of multiple circuit devices; and a method for manufacturing a circuit device using the same. In the lead frame of the present invention, units are arranged and frame-shaped first and second supporters are provided around the units to mechanically support the units. Moreover, a half groove is provided in the first supporter at a portion on an extended line of a dividing line defined at a boundary between each adjacent two of the units. Furthermore, a penetration groove penetrating a part of the second supporter at a portion on an extended line of another dividing line is provided.
摘要翻译：提供：引导框架，能够有效地制造多个电路设备; 以及使用该电路装置的电路装置的制造方法。在本发明的引线框架中，布置单元并且框架形状的第一和第二支撑件设置在单元周围以机械地支撑单元。此外，在第一支撑件中，在每个相邻两个单元之间的边界处限定的分割线的延伸线上的一部分上设置有半槽。此外，设置有在另一分割线的延长线上的部分上贯穿第二支撑体的一部分的贯穿槽。

6. 发明授权

US07589488B2 Motor control apparatus 失效
标题翻译：电机控制装置
公开(公告)号：US07589488B2
公开(公告)日：2009-09-15
申请号：US11632296
申请日：2005-07-11
申请人： Takashi Kitazawa , Kazuhide Takao , Yasuyuki Takei
发明人： Takashi Kitazawa , Kazuhide Takao , Yasuyuki Takei
IPC分类号： G05B11/42
CPC分类号： H02P23/18
摘要： There is provided a motor control apparatus for setting, changing, resetting a control gain or a notch filter frequency Nf without using a parameter inputting apparatus, considerably reducing a procedure required in adjustment of the gain which has been needed from introducing the motor control apparatus until normal operation thereof, and capable of being simply dealt with even by an unskilled person.There is constructed a simple constitution including 2 pieces of rotary switches (1, 2) which are inexpensive and provided with small mounting areas as an input setting apparatus and 5 of LED (5) as a display apparatus, selecting a gain by a contact of the rotary switch, automatically setting a machine resonance filter frequency by detecting a generated vibration frequency, and only changing the rotary switch for temporarily releasing and resetting the control gain or the notch filter frequency Nf.
摘要翻译：提供了一种用于在不使用参数输入装置的情况下设置，改变，重置控制增益或陷波滤波器频率Nf的电动机控制装置，显着地减少了从引入电动机控制装置直到调节所需的增益所需的程序，直到正常操作，并且能够由不熟练的人简单地处理。构成了一种简单的结构，它包括两个便宜的旋转开关（1,2），并且具有作为输入设定装置的小安装区域和作为显示装置的LED（5）的5个，通过接触来选择增益旋转开关，通过检测所产生的振动频率来自动设定机器共振滤波器频率，并且仅改变用于暂时释放和重置控制增益或陷波滤波器频率Nf的旋转开关。

7. 发明申请

US20050040512A1 Circuit device 有权
标题翻译：电路设备
公开(公告)号：US20050040512A1
公开(公告)日：2005-02-24
申请号：US10899220
申请日：2004-07-26
申请人： Makoto Tsubonoya , Katsuhiko Shibusawa , Takashi Kitazawa
发明人： Makoto Tsubonoya , Katsuhiko Shibusawa , Takashi Kitazawa
IPC分类号： H01L25/18 , H01L21/50 , H01L21/60 , H01L23/28 , H01L23/48 , H01L23/495 , H01L23/50 , H01L25/00 , H01L25/04 , H01L27/15
CPC分类号： H01L24/85 , H01L23/49541 , H01L23/49575 , H01L23/49589 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/451 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01L2224/85 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2224/78 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： A circuit device is provided comprising leads and electrical circuitry. The circuit device has a first semiconductor element, a second semiconductor element, first leads electrically connected to the first semiconductor element or the second semiconductor element via fine metal wires and having an end thereof extending outwardly, second leads electrically connected via metal wires to both the first semiconductor element and the second semiconductor element to thus electrically connect the first and second semiconductor elements.
摘要翻译：提供了一种包括引线和电路的电路装置。电路装置具有第一半导体元件，第二半导体元件，通过细金属线电连接到第一半导体元件或第二半导体元件并且其端部向外延伸的第一引线，第二引线通过金属线电连接到两者第一半导体元件和第二半导体元件，从而电连接第一和第二半导体元件。

8. 发明授权

US08609467B2 Lead frame and method for manufacturing circuit device using the same 有权
标题翻译：引线框架及其制造方法
公开(公告)号：US08609467B2
公开(公告)日：2013-12-17
申请号：US12415423
申请日：2009-03-31
申请人： Tetsuya Fukushima , Takashi Kitazawa
发明人： Tetsuya Fukushima , Takashi Kitazawa
IPC分类号： H01L21/00
CPC分类号： H01L23/49541 , H01L21/568 , H01L23/3107 , H01L23/49548 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/181 , H01L2924/30105 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： Provided are: a lead frame enabling efficient manufacturing of multiple circuit devices; and a method for manufacturing a circuit device using the same. In the lead frame of the present invention, units are arranged and frame-shaped first and second supporters are provided around the units to mechanically support the units. Moreover, a half groove is provided in the first supporter at a portion on an extended line of a dividing line defined at a boundary between each adjacent two of the units. Furthermore, a penetration groove penetrating a part of the second supporter at a portion on an extended line of another dividing line is provided.
摘要翻译：提供：引导框架，能够有效地制造多个电路设备; 以及使用该电路装置的电路装置的制造方法。在本发明的引线框架中，布置单元并且框架形状的第一和第二支撑件设置在单元周围以机械地支撑单元。此外，在第一支撑件中，在每个相邻两个单元之间的边界处限定的分割线的延伸线上的一部分上设置有半槽。此外，设置有在另一分割线的延长线上的部分上贯穿第二支撑体的一部分的贯穿槽。

9. 发明申请

US20110304046A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110304046A1
公开(公告)日：2011-12-15
申请号：US13203439
申请日：2010-02-25
申请人： Takashi Kitazawa , Yasushige Sakamoto , Motoaki Wakui
发明人： Takashi Kitazawa , Yasushige Sakamoto , Motoaki Wakui
IPC分类号： H01L23/498 , H01L21/78 , H01L23/48
CPC分类号： H01L23/49503 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/85 , H01L24/97 , H01L2224/02166 , H01L2224/04042 , H01L2224/05001 , H01L2224/05082 , H01L2224/05554 , H01L2224/05558 , H01L2224/05624 , H01L2224/29339 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48475 , H01L2224/48479 , H01L2224/48499 , H01L2224/48624 , H01L2224/48799 , H01L2224/49171 , H01L2224/73265 , H01L2224/7825 , H01L2224/78301 , H01L2224/78703 , H01L2224/85045 , H01L2224/85051 , H01L2224/85075 , H01L2224/851 , H01L2224/85181 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85986 , H01L2224/92 , H01L2224/92147 , H01L2224/92247 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/00015 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01203 , H01L2924/01204 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/10162 , H01L2924/12041 , H01L2924/181 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2224/85 , H01L2224/48472 , H01L2924/00 , H01L2924/00012 , H01L2224/48227 , H01L2924/3512 , H01L2224/48824 , H01L2924/01006 , H01L2224/4554
摘要： A semiconductor element (10) is secured to an island (7), and a plurality of through-holes (8) are formed in the portion of the island (7), which surrounds the area to which the semiconductor element (10) is secured. Further, the electrode pads of the semiconductor element (10) and leads (4) are electrically connected by copper wires (11). In this structure, the cost of materials is reduced by using the copper wires (11) in comparison with gold wires. Further, a part of a resin package (2) is embedded in through-holes (8), so that the island (7) can be easily supported within the resin package (2).
摘要翻译：半导体元件（10）被固定到岛（7）上，并且在岛（7）的部分形成有多个通孔（8），其围绕半导体元件（10）所在的区域安全。此外，半导体元件（10）的电极焊盘和引线（4）通过铜线（11）电连接。在这种结构中，通过使用铜线（11）与金线相比，材料的成本降低。此外，树脂封装（2）的一部分嵌入在通孔（8）中，使得岛（7）能够容易地支撑在树脂封装（2）内。

10. 发明申请

US20110116207A1 SUBSTRATE MOUNTING TABLE OF SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工装置基板安装台
公开(公告)号：US20110116207A1
公开(公告)日：2011-05-19
申请号：US12947214
申请日：2010-11-16
申请人： Tetsuji SATO , Takashi Kitazawa , Akihiro Yoshimura
发明人： Tetsuji SATO , Takashi Kitazawa , Akihiro Yoshimura
IPC分类号： H01L21/683
CPC分类号： H01L21/6831
摘要： A substrate mounting table of a substrate processing apparatus includes a base portion and a circular plate-shaped electrostatic chuck adhered to an upper surface of the base portion by an adhesive layer. The electrostatic chuck has a circular attracting surface to support a substrate. The substrate mounting table further includes an annular focus ring arranged around the electrostatic chuck to surround the substrate and to cover an outer peripheral portion of the upper surface of the base portion. The electrostatic chuck has a two-layer structure including an upper circular part and a lower circular part having a diameter larger than that of the upper circular part. An outer peripheral portion of the lower circular part and an outer peripheral portion of the adhesive layer adhering the lower circular part to the base portion are covered with the focus ring.
摘要翻译：基板处理装置的基板安装台包括基部和通过粘合层粘附到基部的上表面的圆形板状静电卡盘。静电吸盘具有支撑衬底的圆形吸引表面。基板安装台还包括围绕静电卡盘布置以围绕基板并覆盖基部的上表面的外周部分的环形聚焦环。静电卡盘具有包括上部圆形部分和直径大于上部圆形部分的直径的下部圆形部分的两层结构。下部圆形部分的外围部分和将下部圆形部分粘附到基部的粘合剂层的外周部分被聚焦环覆盖。

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