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1. 发明授权

US08858754B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08858754B2
公开(公告)日：2014-10-14
申请号：US13114101
申请日：2011-05-24
申请人： Masato Horiguchi , Hiroshi Tsujimoto , Takashi Kitazawa
发明人： Masato Horiguchi , Hiroshi Tsujimoto , Takashi Kitazawa
IPC分类号： C23C16/509 , C23C16/455 , H01L21/306 , C23F1/00 , H01J37/32 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32633 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32477 , H01J37/32568 , H01J37/32651 , H01J37/32834
摘要： There is provided a plasma processing apparatus capable of easily exhausting a processing gas introduced in a space above a vertically movable upper electrode. The plasma processing apparatus includes a vertically movable upper electrode 120 installed at a ceiling wall 105 of a processing chamber 102 so as to face a lower electrode 111 and having a multiple number of discharge holes 123 for introducing the processing gas; a shield sidewall 310 configured to surround the electrodes and a processing space between the electrodes; an inner gas exhaust path 330 formed at the inside of the shield sidewall and configured to exhaust the atmosphere in the processing space; and an outer gas exhaust path 138 installed at the outside of the shield sidewall and configured to exhaust the processing gas introduced into a space between the upper electrode and the ceiling wall.
摘要翻译：提供了一种等离子体处理装置，其能够容易地排出在可垂直移动的上部电极上方的空间中引入的处理气体。该等离子体处理装置包括一个垂直移动的上部电极120，该上部电极120安装在处理室102的顶壁105处，以面对下部电极111并具有多个用于引入处理气体的排放孔123; 被配置为围绕电极的屏蔽侧壁310和电极之间的处理空间; 内部排气通道330，形成在屏蔽侧壁的内部，并构造成排出处理空间中的大气; 以及外部排气通道138，其安装在屏蔽侧壁的外侧，并被配置为排出引入到上电极和天花板壁之间的空间中的处理气体。

2. 发明申请

US20110290419A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110290419A1
公开(公告)日：2011-12-01
申请号：US13114101
申请日：2011-05-24
申请人： Masato Horiguchi , Hiroshi Tsujimoto , Takashi Kitazawa
发明人： Masato Horiguchi , Hiroshi Tsujimoto , Takashi Kitazawa
IPC分类号： C23F1/08 , C23C16/50
CPC分类号： H01J37/32633 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32477 , H01J37/32568 , H01J37/32651 , H01J37/32834
摘要： There is provided a plasma processing apparatus capable of easily exhausting a processing gas introduced in a space above a vertically movable upper electrode. The plasma processing apparatus includes a vertically movable upper electrode 120 installed at a ceiling wall 105 of a processing chamber 102 so as to face a lower electrode 111 and having a multiple number of discharge holes 123 for introducing the processing gas; a shield sidewall 310 configured to surround the electrodes and a processing space between the electrodes; an inner gas exhaust path 330 formed at the inside of the shield sidewall and configured to exhaust the atmosphere in the processing space; and an outer gas exhaust path 138 installed at the outside of the shield sidewall and configured to exhaust the processing gas introduced into a space between the upper electrode and the ceiling wall.
摘要翻译：提供了一种等离子体处理装置，其能够容易地排出在可垂直移动的上部电极上方的空间中引入的处理气体。该等离子体处理装置包括一个垂直移动的上部电极120，该上部电极120安装在处理室102的顶壁105处，以面对下部电极111并具有多个用于引入处理气体的排放孔123; 被配置为围绕电极的屏蔽侧壁310和电极之间的处理空间; 内部排气通道330，形成在屏蔽侧壁的内部，并构造成排出处理空间中的大气; 以及外部排气通道138，其安装在屏蔽侧壁的外侧，并被配置为排出引入到上电极和天花板壁之间的空间中的处理气体。

3. 发明授权

US09455125B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US09455125B2
公开(公告)日：2016-09-27
申请号：US13070115
申请日：2011-03-23
申请人： Akihiro Yoshimura , Tetsuji Sato , Masato Horiguchi , Nobuhiro Wada , Makoto Kobayashi , Hiroshi Tsujimoto , Jun Tamura , Mamoru Naoi
发明人： Akihiro Yoshimura , Tetsuji Sato , Masato Horiguchi , Nobuhiro Wada , Makoto Kobayashi , Hiroshi Tsujimoto , Jun Tamura , Mamoru Naoi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32091 , H01J37/32568
摘要： Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.
摘要翻译：公开了一种能够抑制在圆筒形室的一侧的移动电极与端壁之间的空间中产生等离子体的基板处理装置。基板处理装置包括用于容纳晶片的圆柱形室，可沿着室内的室的中心轴线移动的喷头，与腔室中的淋浴喷头相对的基座，以及柔性波纹管，其将淋浴头连接到所述室，其中向所述淋浴喷头和所述基座之间呈现的处理空间施加高频功率，将处理气体引入所述处理空间中，所述淋浴喷头和所述室的侧壁彼此不接触，并且旁路部件被安装成电连接淋浴头和盖子或室的侧壁。

4. 发明申请

US20100025372A1 PLASMA PROCESSING METHOD AND APPARATUS 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20100025372A1
公开(公告)日：2010-02-04
申请号：US12533700
申请日：2009-07-31
申请人： Hiroshi Tsujimoto , Toshifumi Nagaiwa , Yuji Otsuka
发明人： Hiroshi Tsujimoto , Toshifumi Nagaiwa , Yuji Otsuka
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01J37/32091 , H01J2237/0206 , H01L21/6833
摘要： In a plasma processing method, a conductor of an electrostatic chuck (ESC) and an electrode are electrically grounded prior to starting the plasma processing. A DC voltage with a polarity is applied to the conductor at a first time point after loading a substrate on the electrode. Then, the electrode is switched from an electrically grounded state to an electrically floating state at a second time point. A RF power is then applied to the electrode at a third time point. The application of the RF power is stopped at a fourth time point after a specified time has lapsed from the third time point. Then, the electrode is switched from the electrically floating state to the electrically grounded state at a fifth time point. Thereafter, the application of the DC voltage is stopped and the conductor is restored to a ground potential at a sixth time point.
摘要翻译：在等离子体处理方法中，静电卡盘（ESC）的导体和电极在开始等离子体处理之前被电接地。在将基板加载到电极上之后，在第一时间点向导体施加极性的直流电压。然后，电极在第二时间点从电接地状态切换到电浮动状态。然后在第三时间点将RF功率施加到电极。在从第三时间点经过指定时间之后，在第四时间点停止RF功率的应用。然后，电极在第五时刻从电浮动状态切换到电接地状态。此后，直流电压的施加停止，并且导体在第六时间点恢复到接地电位。

5. 发明授权

US08383000B2 Substrate processing apparatus, method for measuring distance between electrodes, and storage medium storing program 有权
标题翻译：基板处理装置，电极之间的距离测量方法和存储介质存储程序
公开(公告)号：US08383000B2
公开(公告)日：2013-02-26
申请号：US12958877
申请日：2010-12-02
申请人： Hiroshi Tsujimoto , Makoto Kobayashi , Jun Tamura , Nobuhiro Wada
发明人： Hiroshi Tsujimoto , Makoto Kobayashi , Jun Tamura , Nobuhiro Wada
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： G01B21/16 , H01J37/32091 , H01J37/32568 , H01L21/68742
摘要： A distance between electrodes can be accurately measured by using a lifter. A substrate processing apparatus includes an upper electrode 120 and a lower electrode 310 facing each other within a processing chamber 102; a lift pin 332 that is protrusible from and retractable below the lower electrode and lifts up a substrate mounted on the lower electrode to be separated from the lower electrode; a lifter 330 that elevates the lift pin up and down; and a controller 400 that elevates the lift pin upward and brings the lift pin into contact with the upper electrode by driving the lifter while the substrate is not mounted on the lower electrode and measures a distance between the electrodes based on a moving distance of the lifter.
摘要翻译：可以通过使用升降器来精确地测量电极之间的距离。基板处理装置包括在处理室102内彼此面对的上电极120和下电极310; 升降销332，其能够从下部电极下方伸出并收缩，并提升安装在下部电极上的与下部电极分离的基板; 升降器330，其升降销升降; 以及控制器400，其通过驱动升降器而将升降销向上升高并使提升销与上电极接触，同时基板未安装在下电极上并且基于升降器的移动距离来测量电极之间的距离。

6. 发明申请

US20070284335A1 Etching method and etching apparatus 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US20070284335A1
公开(公告)日：2007-12-13
申请号：US11730196
申请日：2007-03-29
申请人： Hiroshi Tsujimoto
发明人： Hiroshi Tsujimoto
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： H01L21/31144 , H01J37/32935 , H01L21/31116
摘要： The present invention relates to an etching method for etching a film to form a concave portion therein with the use of a photoresist mask provided with an opening. In this method, there is determined, in advance, a first correlation between a parameter value and an opening dimension of the concave portion, as a process parameter for the etching process, when the etching process is conducted with the use of the mask provided with the opening of a reference opening dimension. In addition, there is determined, in advance, a second correlation between a variation in opening dimension of the mask and a variation in opening dimension of the concave portion. When conducting the etching process, an actual opening dimension of the mask is measured. A target parameter value of the process parameter for achieving a target opening dimension of the concave portion is determined, based on a difference between the actual opening dimension of the mask and the reference opening dimension thereof, the target opening dimension of the concave portion to be formed, and the first and second correlations.
摘要翻译：本发明涉及利用设置有开口的光致抗蚀剂掩模来蚀刻膜以形成凹部的蚀刻方法。在该方法中，当使用设置有掩模的掩模进行蚀刻处理时，预先确定参数值和凹部的开口尺寸之间的第一相关性，作为蚀刻工艺的处理参数打开参考开口尺寸。此外，预先确定了掩模的开口尺寸的变化与凹部的开口尺寸的变化之间的第二相关性。当进行蚀刻处理时，测量掩模的实际开口尺寸。基于掩模的实际开口尺寸和基准开口尺寸之间的差，确定用于实现凹部的目标开口尺寸的处理参数的目标参数值，将凹部的目标开口尺寸设为形成，第一和第二相关。

7. 发明申请

US20070049013A1 Method and apparatus for manufacturing semiconductor device, control program and computer storage medium 有权
标题翻译：用于制造半导体器件，控制程序和计算机存储介质的方法和装置
公开(公告)号：US20070049013A1
公开(公告)日：2007-03-01
申请号：US11500416
申请日：2006-08-08
申请人： Hiroshi Tsujimoto
发明人： Hiroshi Tsujimoto
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/76811
摘要： In a method for manufacturing a semiconductor device having a dual damascene structure, a semiconductor substrate formed by stacking a trench mask and a via hole resist mask on an insulating film is loaded into a processing chamber, and a via hole is formed by etching the insulating film through the via hole resist mask. Then, the via hole resist mask is removed by an ashing process and a protective film is formed on an underlayer of the insulating film; Thereafter, a trench is formed by etching the insulating film through the trench mask, and the semiconductor substrate is unloaded from the processing chamber after the via hole forming step, the resist mask removing step, the protective film forming step and the trench forming step are completed in the processing chamber.
摘要翻译：在制造具有双镶嵌结构的半导体器件的方法中，将通过在绝缘膜上堆叠沟槽掩模和通孔抗蚀剂掩模形成的半导体衬底加载到处理室中，并且通过蚀刻绝缘体形成通孔膜通过通孔抗蚀掩模。然后，通过灰化处理去除通孔抗蚀剂掩模，并且在绝缘膜的底层上形成保护膜; 此后，通过通过沟槽掩模蚀刻绝缘膜形成沟槽，并且在通孔形成步骤，抗蚀剂掩模去除步骤，保护膜形成步骤和沟槽形成步骤之后，从处理室中卸载半导体衬底在处理室完成。

8. 发明授权

US08328981B2 Method for heating a focus ring in a plasma apparatus by high frequency power while no plasma being generated 有权
标题翻译：在不产生等离子体的同时通过高频功率加热等离子体装置中的聚焦环的方法
公开(公告)号：US08328981B2
公开(公告)日：2012-12-11
申请号：US12685151
申请日：2010-01-11
申请人： Hiroshi Tsujimoto
发明人： Hiroshi Tsujimoto
IPC分类号： C23F1/08 , H01L21/302
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32522 , H01J37/32623 , H01J37/32642
摘要： A plasma etching apparatus includes a vacuum processing chamber; a lower electrode, i.e., a mounting table for mounting the substrate, provided in the vacuum processing chamber; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas to the vacuum processing chamber; a high frequency power supply unit for supplying a high frequency power to the lower electrode; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In a method for performing a plasma etching on a substrate by using the plasma etching apparatus, a plasma is generated in the vacuum processing chamber to perform the plasma etching on the substrate by using the plasma after the focus ring is heated by supplying a high frequency power from the high frequency power supply unit to the lower electrode under a condition that no plasma is generated.
摘要翻译：等离子体蚀刻装置包括真空处理室; 设置在真空处理室中的下电极，即用于安装基板的安装台; 设置成面向下电极的上电极; 用于向所述真空处理室供给处理气体的气体供给单元; 用于向下电极提供高频电力的高频电源单元; 以及设置在下电极上以围绕基板的周边的聚焦环。在通过使用等离子体蚀刻装置对基板进行等离子体蚀刻的方法中，在真空处理室中产生等离子体，通过在聚焦环被加热后通过使用等离子体来对基板进行等离子体蚀刻，在不产生等离子体的条件下从高频电源单元向下电极供电。

9. 发明申请

US20070084562A1 Plasma processing chamber 审中-公开
标题翻译：等离子处理室
公开(公告)号：US20070084562A1
公开(公告)日：2007-04-19
申请号：US11518228
申请日：2006-09-11
申请人： Hiroshi Tsujimoto
发明人： Hiroshi Tsujimoto
IPC分类号： H01L21/306
CPC分类号： H01J37/3244 , H01J37/32834 , H01J37/32862 , H01J37/32871
摘要： A plasma processing chamber includes a vessel for accommodating therein a substrate; a gas supply unit for supplying a processing gas into the vessel; an electrode for applying a high frequency power into the vessel; a gas exhaust unit, connected to the vessel, for discharging gas from the vessel; and a particle detector for detecting particles floating in the vessel. The particle detector is positioned on a passage functioning as a free-fall path of the particles and also as a moving path of particles carried by the gas discharged from the vessel through the gas exhaust unit. Further, the gas exhaust unit of the plasma processing chamber has a gas exhaust port opened in the vessel toward the free-fall path of the particles.
摘要翻译：等离子体处理室包括用于容纳衬底的容器; 用于将处理气体供给到容器中的气体供给单元; 用于将高频电力施加到所述容器中的电极; 连接到容器的用于从容器排出气体的排气单元; 以及用于检测浮在容器中的颗粒的颗粒检测器。颗粒检测器位于作为颗粒的自由下落路径的通道上，并且还作为通过气体排出单元从容器排出的气体携带的颗粒的移动路径。此外，等离子体处理室的排气单元具有在容器中朝向颗粒的自由落下路径打开的排气口。

10. 发明授权

US08592319B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08592319B2
公开(公告)日：2013-11-26
申请号：US13167574
申请日：2011-06-23
申请人： Nobuhiro Wada , Makoto Kobayashi , Hiroshi Tsujimoto , Jun Tamura , Mamoru Naoi , Jun Oyabu
发明人： Nobuhiro Wada , Makoto Kobayashi , Hiroshi Tsujimoto , Jun Tamura , Mamoru Naoi , Jun Oyabu
IPC分类号： H01L21/3065
CPC分类号： H01J37/04 , H01J37/32091 , H01J37/3255 , H01J37/32568
摘要： A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.
摘要翻译：基板处理装置包括容纳晶片的室，设置在室内并且晶片保持在其上的基座，与基座相对的上电极和连接到基座的第二高频电源，其中上电极电连接到地面并且可相对于基座移动。基板处理装置将处理空间中产生的等离子体和地面之间的等离子体与电介质之间的电位差和电介质与地之间的电位差通过上电极中的电介质分离，并将a 上电极和基座之间的间隙。因此，改变了上电极和基座之间的等离子体密度。

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