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    • 7. 发明授权
    • Solid state image sensing device having no field isolation layer
    • 没有场隔离层的固体摄像装置
    • US5235426A
    • 1993-08-10
    • US819115
    • 1992-01-10
    • Katsuhiko Shibusawa
    • Katsuhiko Shibusawa
    • H01L27/148
    • H01L27/14831
    • A method of operating a solid state image sensing device having a plurality of electron transfer channels; first and second photodiodes; and first, second, third and fourth electrodes disposed on the electron transfer channels and surrounding the first and second photodiodes. The method includes the step of applying a first potential to the first electrode to transfer electrons from the second photodiode to an electron transfer channel and simultaneously applying a lower potential to the second, third and fourth electrodes to prohibit the electron transfer from the second photodiode to the transfer channel. The method also applies the first potential to the third electrode to transfer electrons from the first photodiode to the electron transfer channel and simultaneously applies the lower potential to the first, second and fourth electrodes to prohibit the electron transfer from the first photodiode to the electron transfer channel. Finally, the method includes the step of sequentially applying a second potential to the first, second, third and fourth electrodes to transfer electrons through the electron transfer channel.
    • 一种操作具有多个电子传输通道的固态图像感测装置的方法; 第一和第二光电二极管; 以及设置在电子传输通道上并围绕第一和第二光电二极管的第一,第二,第三和第四电极。 该方法包括向第一电极施加第一电位以将电子从第二光电二极管转移到电子传输通道的步骤,同时向第二,第三和第四电极施加较低的电位以禁止从第二光电二极管到第 传输通道。 该方法还将第一电位施加到第三电极以将电子从第一光电二极管转移到电子传输通道,并且同时将较低电位施加到第一,第二和第四电极,以禁止从第一光电二极管到电子转移的电子转移 渠道。 最后,该方法包括顺序地向第一,第二,第三和第四电极施加第二电位以将电子传送通过电子传输通道的步骤。