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1. 发明申请

US20060032074A1 Vacuum processing apparatus and substrate transfer method 有权
标题翻译：真空处理装置和基板转印方法
公开(公告)号：US20060032074A1
公开(公告)日：2006-02-16
申请号：US11259147
申请日：2005-10-27
申请人： Toshihiko Kitoku , Shinji Niwa , Toshiki Hosaka , Takashi Kitazawa , Atsuo Sanda , Yoshitaka Sato
发明人： Toshihiko Kitoku , Shinji Niwa , Toshiki Hosaka , Takashi Kitazawa , Atsuo Sanda , Yoshitaka Sato
IPC分类号： F26B13/30 , F26B5/04
CPC分类号： H01L21/67253 , H01L21/67017 , H01L21/67167 , H01L21/67745
摘要： An etching processing apparatus 1 has a transfer chamber 2, a plurality of processing chambers 3 and 4, and a plurality of cassette chambers 7 and 8. Inside the transfer chamber 2, a transfer mechanism 14 is provided. A control device 17 pauses the operation of the vacuum pump 16 after closing an opening/closing valve 15 of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber 2 in which the transfer mechanism 14 is provided, when the operation of the transfer mechanism 14 is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.
摘要翻译：蚀刻处理装置1具有传送室2，多个处理室3和4以及多个盒室7和8.在传送室2内设置有传送机构14。控制装置17在关闭真空排气机构的打开/关闭阀15之后暂停真空泵16的操作，该真空抽气机构在传送机构14的操作中真空抽出设置有传送机构14的传送室2 暂停预定时间或更长时间。因此，能够保持能量而不会降低生产率。

2. 发明授权

US5837093A Apparatus for performing plain etching treatment 失效
标题翻译：用于进行平面蚀刻处理的装置
公开(公告)号：US5837093A
公开(公告)日：1998-11-17
申请号：US383990
申请日：1995-02-06
申请人： Makoto Hasegawa , Atsuo Sanda
发明人： Makoto Hasegawa , Atsuo Sanda
IPC分类号： C23F4/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , C23F1/02
CPC分类号： H01L21/67069 , H01J37/3244 , H01L21/32137 , H01J2237/3343 , Y10S438/941
摘要： Disclosed herein are a dry etching method and a dry etching apparatus. The method comprises a step of applying an etching inhibiting gas to that portion of a workpiece where etching speed is high, while the workpiece is being etched with reactive-gas plasma. The apparatus comprises functions for holding a reactive etching gas, a first electrode located within the gas-holding functions, for supporting a workpiece, a second electrode located within the gas-holding functions and spaced apart from the first electrode by a predetermined distance, functions for supplying high-frequency power, thereby to convert the reactive etching gas into a plasma in the space between the first and second electrodes, and functions for supplying an etching inhibiting gas to that portion of the workpiece where etching speed is high.
摘要翻译：这里公开了干蚀刻方法和干蚀刻装置。该方法包括在用反应气体等离子体蚀刻工件的同时，将蚀刻抑制气体施加到蚀刻速度高的工件的那部分。该装置包括用于保持反应性蚀刻气体的功能，位于气体保持功能内的用于支撑工件的第一电极，位于气体保持功能内并与第一电极间隔预定距离的第二电极，功能用于提供高频电力，从而将反应性蚀刻气体转换成在第一和第二电极之间的空间中的等离子体，以及用于向蚀刻速度高的工件的那部分提供蚀刻抑制气体的功能。

3. 发明授权

US5795399A Semiconductor device manufacturing apparatus, method for removing reaction product, and method of suppressing deposition of reaction product 失效
标题翻译：半导体装置的制造装置，反应产物的除去方法以及抑制反应产物沉积的方法
公开(公告)号：US5795399A
公开(公告)日：1998-08-18
申请号：US496754
申请日：1995-06-29
申请人： Makoto Hasegawa , Atsuo Sanda , Haruhiko Nomura
发明人： Makoto Hasegawa , Atsuo Sanda , Haruhiko Nomura
IPC分类号： B08B3/12 , C23C16/56 , H01L21/00 , H01L21/306 , B08B6/00 , B44C1/22 , C23F1/02
CPC分类号： H01L21/67069 , B08B3/12 , C23C16/56 , H01L21/02043 , H01L21/67201 , H01J2237/022
摘要： A plasma etching apparatus has a first load-lock chamber, a process chamber connected to the first load-lock chamber through a gate valve, and a second load-lock chamber connected to the process chamber through another gate valve. A first processing section is provided to the process chamber to etch a wafer. A second processing section is provided to the second load-lock chamber to remove a reaction product generated during etching from the wafer. In the second processing section, an ultrasonic wave is applied to the wafer, thereby removing the reaction product from the wafer.
摘要翻译：等离子体蚀刻装置具有第一加载锁定室，通过闸阀连接到第一加载锁定室的处理室和通过另一个闸阀连接到处理室的第二加载锁定室。第一处理部分被提供到处理室以蚀刻晶片。第二处理部分设置到第二加载锁定室以去除在蚀刻期间从晶片产生的反应产物。在第二处理部中，向晶片施加超声波，从晶片除去反应产物。

4. 发明授权

US5415728A Method of performing plain etching treatment and apparatus therefor 失效
标题翻译：进行平面蚀刻处理的方法及其设备
公开(公告)号：US5415728A
公开(公告)日：1995-05-16
申请号：US004413
申请日：1993-01-14
申请人： Makoto Hasegawa , Atsuo Sanda
发明人： Makoto Hasegawa , Atsuo Sanda
IPC分类号： C23F4/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3213
CPC分类号： H01L21/67069 , H01J37/3244 , H01L21/32137 , H01J2237/3343 , Y10S438/941
摘要： Disclosed herein are a dry etching method and a dry etching apparatus. The method comprises a step of applying an etching inhibiting gas to that portion of a workpiece where etching speed is high, while the workpiece is being etched with reactive-gas plasma. The apparatus comprises functions for holding a reactive etching gas, a first electrode located within the gas-holding functions, for supporting a workpiece, a second electrode located within the gas-holding functions and spaced apart from the first electrode by a predetermined distance, functions for supplying high-frequency power, thereby to convert the reactive etching gas into a plasma in the space between the first and second electrodes, and functions for supplying an etching inhibiting gas to that portion of the workpiece where etching speed is high.
摘要翻译：这里公开了干蚀刻方法和干蚀刻装置。该方法包括在用反应气体等离子体蚀刻工件的同时，将蚀刻抑制气体施加到蚀刻速度高的工件的那部分。该装置包括用于保持反应性蚀刻气体的功能，位于气体保持功能内的用于支撑工件的第一电极，位于气体保持功能内并与第一电极间隔开预定距离的第二电极，功能用于提供高频电力，从而将反应性蚀刻气体转换成在第一和第二电极之间的空间中的等离子体，以及用于向蚀刻速度高的工件的那部分提供蚀刻抑制气体的功能。

5. 发明授权

US07201851B2 Vacuum processing apparatus and substrate transfer method 有权
标题翻译：真空处理装置和基板转印方法
公开(公告)号：US07201851B2
公开(公告)日：2007-04-10
申请号：US11259147
申请日：2005-10-27
申请人： Toshihiko Kitoku , Shinji Niwa , Toshiki Hosaka , Takashi Kitazawa , Atsuo Sanda , Yoshitaka Sato
发明人： Toshihiko Kitoku , Shinji Niwa , Toshiki Hosaka , Takashi Kitazawa , Atsuo Sanda , Yoshitaka Sato
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/10
CPC分类号： H01L21/67253 , H01L21/67017 , H01L21/67167 , H01L21/67745
摘要： An etching processing apparatus 1 has a transfer chamber 2, a plurality of processing chambers 3 and 4, and a plurality of cassette chambers 7 and 8. Inside the transfer chamber 2, a transfer mechanism 14 is provided. A control device 17 pauses the operation of the vacuum pump 16 after closing an opening/closing valve 15 of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber 2 in which the transfer mechanism 14 is provided, when the operation of the transfer mechanism 14 is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.
摘要翻译：蚀刻处理装置1具有传送室2，多个处理室3和4以及多个盒室7和8。在传送室2内部设置有传送机构14。控制装置17在关闭真空排气机构的打开/关闭阀15之后暂停真空泵16的操作，该真空抽气机构在传送机构14的操作中真空抽出设置有传送机构14的传送室2 暂停预定时间或更长时间。因此，能够保持能量而不会降低生产率。

6. 发明授权

US06990747B2 Vacuum processing apparatus and substrate transfer method 有权
标题翻译：真空处理装置和基板转印方法
公开(公告)号：US06990747B2
公开(公告)日：2006-01-31
申请号：US10821971
申请日：2004-04-12
申请人： Toshihiko Kitoku , Shinji Niwa , Toshiki Hosaka , Takashi Kitazawa , Atsuo Sanda , Yoshitaka Sato
发明人： Toshihiko Kitoku , Shinji Niwa , Toshiki Hosaka , Takashi Kitazawa , Atsuo Sanda , Yoshitaka Sato
IPC分类号： F26B13/30
CPC分类号： H01L21/67253 , H01L21/67017 , H01L21/67167 , H01L21/67745
摘要： An etching processing apparatus 1 has a transfer chamber 2, a plurality of processing chambers 3 and 4, and a plurality of cassette chambers 7 and 8. Inside the transfer chamber 2, a transfer mechanism 14 is provided. A control device 17 pauses the operation of the vacuum pump 16 after closing an opening/closing valve 15 of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber 2 in which the transfer mechanism 14 is provided, when the operation of the transfer mechanism 14 is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.
摘要翻译：蚀刻处理装置1具有传送室2，多个处理室3和4以及多个盒室7和8。在传送室2内部设置有传送机构14。控制装置17在关闭真空排气机构的打开/关闭阀15之后暂停真空泵16的操作，该真空抽气机构在传送机构14的操作中真空抽出设置有传送机构14的传送室2 暂停预定时间或更长时间。因此，能够保持能量而不会降低生产率。

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