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1. 发明授权

US08692370B2 Semiconductor device with copper wire ball-bonded to electrode pad including buffer layer 有权
标题翻译：带有铜线的半导体器件与电极焊盘焊接，包括缓冲层
公开(公告)号：US08692370B2
公开(公告)日：2014-04-08
申请号：US13203439
申请日：2010-02-25
申请人： Takashi Kitazawa , Yasushige Sakamoto , Motoaki Wakui
发明人： Takashi Kitazawa , Yasushige Sakamoto , Motoaki Wakui
IPC分类号： H01L23/49
CPC分类号： H01L23/49503 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/85 , H01L24/97 , H01L2224/02166 , H01L2224/04042 , H01L2224/05001 , H01L2224/05082 , H01L2224/05554 , H01L2224/05558 , H01L2224/05624 , H01L2224/29339 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48475 , H01L2224/48479 , H01L2224/48499 , H01L2224/48624 , H01L2224/48799 , H01L2224/49171 , H01L2224/73265 , H01L2224/7825 , H01L2224/78301 , H01L2224/78703 , H01L2224/85045 , H01L2224/85051 , H01L2224/85075 , H01L2224/851 , H01L2224/85181 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85986 , H01L2224/92 , H01L2224/92147 , H01L2224/92247 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/00015 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01203 , H01L2924/01204 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/10162 , H01L2924/12041 , H01L2924/181 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2224/85 , H01L2224/48472 , H01L2924/00 , H01L2924/00012 , H01L2224/48227 , H01L2924/3512 , H01L2224/48824 , H01L2924/01006 , H01L2224/4554
摘要： A semiconductor element (10) is secured to an island (7), and a plurality of through-holes (8) are formed in the portion of the island (7), which surrounds the area to which the semiconductor element (10) is secured. Further, the electrode pads of the semiconductor element (10) and leads (4) are electrically connected by copper wires (11). In this structure, the cost of materials is reduced by using the copper wires (11) in comparison with gold wires. Further, a part of a resin package (2) is embedded in through-holes (8), so that the island (7) can be easily supported within the resin package (2).
摘要翻译：半导体元件（10）被固定到岛（7）上，并且在岛（7）的部分中形成有多个通孔（8），其围绕半导体元件（10）所在的区域安全。此外，半导体元件（10）的电极焊盘和引线（4）通过铜线（11）电连接。在这种结构中，通过使用铜线（11）与金线相比，材料的成本降低。此外，树脂封装（2）的一部分嵌入在通孔（8）中，使得岛（7）能够容易地支撑在树脂封装（2）内。

2. 发明授权

US07064046B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07064046B2
公开(公告)日：2006-06-20
申请号：US10771497
申请日：2004-02-05
申请人： Motoaki Wakui , Isao Ochiai , Ron Eyal , Gil Shetrit
发明人： Motoaki Wakui , Isao Ochiai , Ron Eyal , Gil Shetrit
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/78
摘要： The invention provides an algorithm for aligning a rotating blade in a dicing process of partially dicing a wafer attached to a substrate. A width of a cut groove and distance between pads in the cut groove are detected by a recognition camera. Based on a result of this detection, alignment data Δy which is distance between a centerline of the width of the cut groove and a real centerline are calculated. Based on a difference between the distance of the pads in the cut groove and a target value of the distance, data Δz on alignment in a depth direction of the cut groove is calculated. The rotating blade is aligned by using the alignment data Δy and Δz.
摘要翻译：本发明提供了一种用于在切割附着于基底的晶片的切割工艺中对准旋转刀片的算法。切割槽的宽度和切割槽中的焊盘之间的距离由识别照相机检测。基于该检测的结果，计算作为切割槽的宽度的中心线与实际中心线之间的距离的对准数据Deltay。基于切槽中的焊盘的距离与距离的目标值之间的差异，计算切割槽的深度方向上的对准的数据Deltaz。旋转刀片通过使用对准数据Deltay和Deltaz对齐。

3. 发明申请

US20110304046A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110304046A1
公开(公告)日：2011-12-15
申请号：US13203439
申请日：2010-02-25
申请人： Takashi Kitazawa , Yasushige Sakamoto , Motoaki Wakui
发明人： Takashi Kitazawa , Yasushige Sakamoto , Motoaki Wakui
IPC分类号： H01L23/498 , H01L21/78 , H01L23/48
CPC分类号： H01L23/49503 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/85 , H01L24/97 , H01L2224/02166 , H01L2224/04042 , H01L2224/05001 , H01L2224/05082 , H01L2224/05554 , H01L2224/05558 , H01L2224/05624 , H01L2224/29339 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48475 , H01L2224/48479 , H01L2224/48499 , H01L2224/48624 , H01L2224/48799 , H01L2224/49171 , H01L2224/73265 , H01L2224/7825 , H01L2224/78301 , H01L2224/78703 , H01L2224/85045 , H01L2224/85051 , H01L2224/85075 , H01L2224/851 , H01L2224/85181 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85986 , H01L2224/92 , H01L2224/92147 , H01L2224/92247 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/00015 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01203 , H01L2924/01204 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/10162 , H01L2924/12041 , H01L2924/181 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2224/85 , H01L2224/48472 , H01L2924/00 , H01L2924/00012 , H01L2224/48227 , H01L2924/3512 , H01L2224/48824 , H01L2924/01006 , H01L2224/4554
摘要： A semiconductor element (10) is secured to an island (7), and a plurality of through-holes (8) are formed in the portion of the island (7), which surrounds the area to which the semiconductor element (10) is secured. Further, the electrode pads of the semiconductor element (10) and leads (4) are electrically connected by copper wires (11). In this structure, the cost of materials is reduced by using the copper wires (11) in comparison with gold wires. Further, a part of a resin package (2) is embedded in through-holes (8), so that the island (7) can be easily supported within the resin package (2).
摘要翻译：半导体元件（10）被固定到岛（7）上，并且在岛（7）的部分形成有多个通孔（8），其围绕半导体元件（10）所在的区域安全。此外，半导体元件（10）的电极焊盘和引线（4）通过铜线（11）电连接。在这种结构中，通过使用铜线（11）与金线相比，材料的成本降低。此外，树脂封装（2）的一部分嵌入在通孔（8）中，使得岛（7）能够容易地支撑在树脂封装（2）内。

4. 发明申请

US20080093708A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080093708A1
公开(公告)日：2008-04-24
申请号：US11956160
申请日：2007-12-13
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L23/48
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译：改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

5. 发明授权

US07312107B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07312107B2
公开(公告)日：2007-12-25
申请号：US10910805
申请日：2004-08-04
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译：改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

6. 发明申请

US20050048740A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050048740A1
公开(公告)日：2005-03-03
申请号：US10910805
申请日：2004-08-04
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L23/12 , H01L21/301 , H01L23/31 , H01L23/485
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译：改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

7. 发明申请

US20050009302A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20050009302A1
公开(公告)日：2005-01-13
申请号：US10771497
申请日：2004-02-05
申请人： Motoaki Wakui , Isao Ochiai , Ron Eyal , Gil Shetrit
发明人： Motoaki Wakui , Isao Ochiai , Ron Eyal , Gil Shetrit
IPC分类号： H01L21/301 , H01L21/44 , H01L21/46 , H01L21/66 , H01L21/78
CPC分类号： H01L21/78
摘要： The invention provides an algorithm for aligning a rotating blade in a dicing process of partially dicing a wafer attached to a substrate. A width of a cut groove and distance between pads in the cut groove are detected by a recognition camera. Based on a result of this detection, alignment data Δy which is distance between a centerline of the width of the cut groove and a real centerline are calculated. Based on a difference between the distance of the pads in the cut groove and a target value of the distance, data Δz on alignment in a depth direction of the cut groove is calculated. The rotating blade is aligned by using the alignment data Δy and Δz.
摘要翻译：本发明提供了一种用于在切割附着于基底的晶片的切割工艺中对准旋转刀片的算法。切割槽的宽度和切割槽中的焊盘之间的距离由识别照相机检测。基于该检测的结果，计算作为切割槽的宽度的中心线与实际中心线之间的距离的对准数据Deltay。基于切槽中的焊盘的距离与距离的目标值之间的差异，计算切割槽的深度方向上的对准的数据Deltaz。旋转刀片通过使用对准数据Deltay和Deltaz对齐。

8. 发明授权

US07456083B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07456083B2
公开(公告)日：2008-11-25
申请号：US11069061
申请日：2005-03-02
申请人： Takashi Noma , Yoshinori Seki , Motoaki Wakui
发明人： Takashi Noma , Yoshinori Seki , Motoaki Wakui
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , H01L21/561 , H01L23/3114 , H01L23/544 , H01L24/10 , H01L24/13 , H01L24/97 , H01L2223/54453 , H01L2223/5448 , H01L2224/05001 , H01L2224/05022 , H01L2224/051 , H01L2224/05548 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00 , H01L2924/00014
摘要： The invention is directed to an improvement of cutting accuracy in a cutting process when a semiconductor device attached with a supporting member is manufactured. The invention provides a manufacturing method of a semiconductor device where a semiconductor wafer attached with a glass substrate is cut with moving a rotation blade along a dicing region and has following features. A pair of alignment marks is formed facing each other over the dicing region on the semiconductor wafer. Then, when the rotation blade is to be aligned on a center of the dicing region, that is, on a centerline thereof in the cutting process, positions of the alignment marks are detected by a recognition camera, the centerline is calculated based on the detection result, and the rotation blade is aligned on the centerline to perform cutting.
摘要翻译：本发明涉及当制造附着有支撑构件的半导体器件时，在切割过程中提高切割精度。本发明提供一种半导体器件的制造方法，其中通过沿着切割区域移动旋转刀片来切割附着有玻璃基板的半导体晶片，并且具有以下特征。在半导体晶片上的切割区域上形成一对对准标记。然后，当切割区域的中心，即在切割过程中的中心线处，旋转刀片对准时，通过识别照相机检测对准标记的位置，基于检测计算中心线结果，旋转叶片在中心线上对齐，以进行切割。

9. 发明申请

US20050208735A1 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20050208735A1
公开(公告)日：2005-09-22
申请号：US11069061
申请日：2005-03-02
申请人： Takashi Noma , Yoshinori Seki , Motoaki Wakui
发明人： Takashi Noma , Yoshinori Seki , Motoaki Wakui
IPC分类号： H01L21/301 , G01R31/26 , H01L21/56 , H01L21/78 , H01L23/31 , H01L23/485 , H01L23/544
CPC分类号： H01L21/78 , H01L21/561 , H01L23/3114 , H01L23/544 , H01L24/10 , H01L24/13 , H01L24/97 , H01L2223/54453 , H01L2223/5448 , H01L2224/05001 , H01L2224/05022 , H01L2224/051 , H01L2224/05548 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00 , H01L2924/00014
摘要： The invention is directed to an improvement of cutting accuracy in a cutting process when a semiconductor device attached with a supporting member is manufactured. The invention provides a manufacturing method of a semiconductor device where a semiconductor wafer attached with a glass substrate is cut with moving a rotation blade along a dicing region and has following features. A pair of alignment marks is formed facing each other over the dicing region on the semiconductor wafer. Then, when the rotation blade is to be aligned on a center of the dicing region, that is, on a centerline thereof in the cutting process, positions of the alignment marks are detected by a recognition camera, the centerline is calculated based on the detection result, and the rotation blade is aligned on the centerline to perform cutting.
摘要翻译：本发明涉及当制造附着有支撑构件的半导体器件时，在切割过程中提高切割精度。本发明提供一种半导体器件的制造方法，其中通过沿着切割区域移动旋转刀片来切割附着有玻璃基板的半导体晶片，并且具有以下特征。在半导体晶片上的切割区域上形成一对对准标记。然后，当在切割过程中旋转刀片对准切割区域的中心时，即在切割过程的中心线上，通过识别照相机检测对准标记的位置，基于检测计算中心线结果，旋转叶片在中心线上对齐，以进行切割。

10. 发明授权

US07919875B2 Semiconductor device with recess portion over pad electrode 有权
标题翻译：具有在焊盘电极上的凹陷部分的半导体器件
公开(公告)号：US07919875B2
公开(公告)日：2011-04-05
申请号：US11956160
申请日：2007-12-13
申请人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
发明人： Takashi Noma , Katsuhiko Kitagawa , Hisao Otsuka , Akira Suzuki , Yoshinori Seki , Yukihiro Takao , Keiichi Yamaguchi , Motoaki Wakui , Masanori Iida
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.
摘要翻译：改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

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