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1. 发明申请

US20130192761A1 Rotary Substrate Processing System 审中-公开
标题翻译：旋转底材加工系统
公开(公告)号：US20130192761A1
公开(公告)日：2013-08-01
申请号：US13754733
申请日：2013-01-30
申请人： Joseph Yudovsky , Ralf Hofmann , Jeonghoon Oh , Li-Qun Xia , Toshiaki Fujita , Pravin K. Narwankar , Nag B, Patibandla , Srinivas Satya , Banqiu Wu
发明人： Joseph Yudovsky , Ralf Hofmann , Jeonghoon Oh , Li-Qun Xia , Toshiaki Fujita , Pravin K. Narwankar , Nag B, Patibandla , Srinivas Satya , Banqiu Wu
IPC分类号： C23C16/54 , B05C13/00
CPC分类号： C23C16/54 , B05C13/00 , C23C16/45551
摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.
摘要翻译：提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。每个衬底位于设置在衬底支撑组件上的衬底载体上。多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。

2. 发明申请

US20130196078A1 Multi-Chamber Substrate Processing System 审中-公开
标题翻译：多腔基底处理系统
公开(公告)号：US20130196078A1
公开(公告)日：2013-08-01
申请号：US13754771
申请日：2013-01-30
申请人： Joseph Yudovsky , Nag B. Patibandla , Pravin K. Narwankar , Li-Qun Xia , Toshiaki Fujita , Ralf Hofmann , Jeonghoon Oh , Srinivas Satya , Banqiu Wu
发明人： Joseph Yudovsky , Nag B. Patibandla , Pravin K. Narwankar , Li-Qun Xia , Toshiaki Fujita , Ralf Hofmann , Jeonghoon Oh , Srinivas Satya , Banqiu Wu
IPC分类号： C23C16/458
CPC分类号： C23C16/4584 , C23C16/45519 , C23C16/45551 , C23C16/54 , H01L21/67742
摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one substrate processing platform and at least one substrate staging platform. The substrate processing platform includes a rotary track system capable of supporting multiple substrate support assemblies and continuously rotating the substrate support assemblies, each carrying a substrate thereon. Each substrate is positioned on a substrates support assembly disposed on the rotary track system and being processed through at least one shower head station and at least one buffer station, which are positioned atop the rotary track system of the substrate processing platform. Multiple substrates disposed on the substrate support assemblies are processed in and out the substrate processing platform. The substrate staging platform includes at least one dual-substrate processing station, each dual-substrate processing station includes two substrate support assemblies for supporting two substrates thereon.
摘要翻译：提供了用于处理多个基板的基板处理系统，并且通常包括至少一个基板处理平台和至少一个基板分段平台。基板处理平台包括能够支撑多个基板支撑组件并且连续旋转基板支撑组件的旋转轨道系统，每个基板支撑组件在其上承载基板。每个基板定位在设置在旋转轨道系统上的基板支撑组件上，并且通过位于基板处理平台的旋转轨道系统顶部的至少一个喷头站和至少一个缓冲站进行处理。设置在基板支撑组件上的多个基板在基板处理平台内进出处理。衬底分级平台包括至少一个双衬底处理站，每个双衬底处理站包括用于在其上支撑两个衬底的两个衬底支撑组件。

3. 发明申请

US20130192524A1 Continuous Substrate Processing System 有权
标题翻译：连续基板加工系统
公开(公告)号：US20130192524A1
公开(公告)日：2013-08-01
申请号：US13755891
申请日：2013-01-31
申请人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
发明人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
IPC分类号： H01L21/673
CPC分类号： H01L21/673 , C23C16/45546 , C23C16/4558 , C23C16/4584 , C23C16/54 , H01L21/67346 , H01L21/677
摘要： A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.
摘要翻译：提供一种处理室，其具有堆叠在其中的多个可移动基板载体，用于连续处理多个基板。可移动衬底载体能够从处理室的外部传送，例如从负载运送室转移到处理室中并且从处理室中输送，例如被转移到另一负载运送室中。输送到处理室中的工艺气体在空间上分离成多个处理槽，和/或在时间上被控制。处理室可以是多室衬底处理系统的一部分。

4. 发明授权

US09748125B2 Continuous substrate processing system 有权
公开(公告)号：US09748125B2
公开(公告)日：2017-08-29
申请号：US13755891
申请日：2013-01-31
申请人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
发明人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
IPC分类号： C23C16/00 , H01L21/00 , H01L21/673 , H01L21/677 , C23C16/455 , C23C16/458 , C23C16/54
CPC分类号： H01L21/673 , C23C16/45546 , C23C16/4558 , C23C16/4584 , C23C16/54 , H01L21/67346 , H01L21/677
摘要： A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

5. 发明授权

US06710301B2 Flux-contained welding wire 有权
标题翻译：焊剂焊丝
公开(公告)号：US06710301B2
公开(公告)日：2004-03-23
申请号：US10196815
申请日：2002-07-17
申请人： Teiichiro Saito , Tadashi Ito , Kazuo Tsujikawa , Toshio Yoshizawa , Toshiaki Fujita , Kanehisa Tanaka
发明人： Teiichiro Saito , Tadashi Ito , Kazuo Tsujikawa , Toshio Yoshizawa , Toshiaki Fujita , Kanehisa Tanaka
IPC分类号： B23K3502
CPC分类号： B23K35/3033 , B23K35/0266 , B23K35/0272
摘要： A flux-contained welding wire is provided wherein a conductive core wire can be disposed without any complicate manufacturing steps performed on a metal outer layer. Flux is filled inside of the metal outer layer. The conductive core wire is disposed nearly in the center of the flux without being supported by the metal outer layer. The flux contains 20-80 weight % of metal powder. A weight % of the weight of the flux to the weight of the welding wire per unit length is set in a range of 6.5-30 weight %. The weight % of the weight of the conductive core wire to the weight of the welding wire per unit length is set in a range of 1.5-15 weight %.
摘要翻译：提供了一种焊剂焊丝，其中可以设置导电芯线，而不会在金属外层上执行任何复杂的制造步骤。助焊剂填充在金属外层的内部。导电芯线几乎位于焊剂的中心，而不被金属外层支撑。焊剂含有20-80重量％的金属粉末。焊剂重量与焊丝每单位长度重量的重量百分比设定在6.5-30重量％的范围内。导电芯线的重量与每单位长度焊丝重量的重量百分比设定在1.5-15重量％的范围内。

6. 发明授权

US5849092A Process for chlorine trifluoride chamber cleaning 失效
标题翻译：三氟化氯室清洗工艺
公开(公告)号：US5849092A
公开(公告)日：1998-12-15
申请号：US805459
申请日：1997-02-25
申请人： Ming Xi , Kazuhiro Nishina , Steve (Aihua) Chen , Toshiaki Fujita
发明人： Ming Xi , Kazuhiro Nishina , Steve (Aihua) Chen , Toshiaki Fujita
IPC分类号： C23C16/44 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/285 , B08B7/00 , B08B9/00
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S438/905
摘要： A method for removing particles and residue that build up inside a substrate processing system during a substrate processing operation, without overetching system components, is described. One method includes the steps of: flowing an etchant gas comprising chlorine trifluoride (CIF.sub.3), diluted with an inert carrier gas, into a processing chamber after completion of the substrate processing operation. The parts of the system within the chamber with the greatest amount of build-up are preferentially heated to facilitate more extensive cleaning of those parts. Parts of the system within the chamber with less build up are protected from overetching by keeping them about 200.degree. C. cooler than the heavily-deposited parts. Heating the heavily-deposited chamber parts to a temperature of at least about 400.degree. C. allows using a lower concentration of etchant gas for the cleaning process than a lower temperature process would allow. The etchant gas reacts with both particles and residue in the chamber, reducing both particulate-related defects and deposition build-up. Another method includes blanketing lightly-deposited areas of the chamber with a nonreactive gas to displace and dilute the etchant gas from these areas for part of the cleaning process, while heavily-deposited areas are exposed to a higher concentration of the etchant gas for a longer period of time. The blanketing gas is turned off for another part of the cleaning process so that these areas are also cleaned.
摘要翻译：描述了在基板处理操作期间在基板处理系统内积聚的颗粒和残余物的清除方法，而不用过滤系统部件。一种方法包括以下步骤：在完成基板处理操作之后，使包含用惰性载气稀释的三氟化氯（CIF3）的蚀刻剂气体流入处理室。具有最大累积量的室内的系统部分被优先加热以便于对这些部件进行更广泛的清洁。室内较少堆积的室内部分系统通过保持其比重沉积部分冷却约200℃来保护免于过蚀刻。将重沉积的室部件加热到至少约400℃的温度，允许使用较低浓度的蚀刻剂气体用于清洁过程，而不是较低温度过程将允许。蚀刻剂气体与室中的颗粒和残余物反应，减少了颗粒相关缺陷和沉积物积聚。另一种方法包括用非反应性气体覆盖室内轻度沉积的区域，以便从这些区域置换和稀释蚀刻剂气体用于部分清洁过程，同时沉积的区域暴露于较高浓度的蚀刻剂气体较长时间一段的时间。对于清洁过程的另一部分，遮盖气体被关闭，使得这些区域也被清洁。

7. 发明授权

US08802242B2 Clad plate 有权
标题翻译：包层板
公开(公告)号：US08802242B2
公开(公告)日：2014-08-12
申请号：US13266817
申请日：2010-01-08
申请人： Yoshimitsu Oda , Masaaki Ishio , Toshiaki Fujita
发明人： Yoshimitsu Oda , Masaaki Ishio , Toshiaki Fujita
IPC分类号： B23K20/02 , B23K35/30 , C22C21/06 , B32B15/01 , C22C9/00 , H01M2/30 , C22C21/12 , C22C21/02 , C22C21/00 , B23K33/00 , C22C9/04 , C22C19/00 , C22C9/06 , C22C38/00 , C22C21/16 , C22C19/03
CPC分类号： H01M2/305 , B23K20/02 , B23K33/004 , B23K35/3033 , B23K2103/10 , B23K2103/12 , B23K2103/18 , B32B15/012 , B32B15/015 , B32B15/017 , C22C9/00 , C22C9/04 , C22C9/06 , C22C19/002 , C22C19/03 , C22C21/00 , C22C21/02 , C22C21/06 , C22C21/12 , C22C21/16 , C22C38/00 , Y02E60/12 , Y10T428/12389 , Y10T428/12736 , Y10T428/12757
摘要： A clad plate includes an aluminum plate and a hard metal plate joined together at side end surfaces thereof. Side end surfaces of an aluminum plate and a hard metal plate are jointed together via a nickel layer by pressure welding. A ridge and a groove formed in the side end surface of the aluminum plate are respectively engaged and joined, via the nickel layer, to a groove and a ridge formed in the side end surface of the hard metal plate, and an end portion of the nickel layer extends beyond the rear end portion of the side end surface of the aluminum plate and is jointed to the plate surface of the aluminum plate with the end portion exposed thereon. The average width W of the exposed portion of the nickel layer exposed on the plate surface is preferably from about 0.2 mm to about 1.5 mm.
摘要翻译：复合板包括在其侧端面处接合在一起的铝板和硬金属板。铝板和硬金属板的侧端面经由镍层通过压焊接合在一起。形成在铝板的侧端面上的脊和沟槽分别通过镍层接合并接合到形成在硬金属板的侧端表面中的槽和脊，并且镍层延伸超过铝板的侧端面的后端部分，并且其端部暴露在铝板的板表面上。暴露在板表面上的镍层的暴露部分的平均宽度W优选为约0.2mm至约1.5mm。

8. 发明授权

US08607440B2 Method of manufacturing a thermistor element 有权
标题翻译：制造热敏电阻元件的方法
公开(公告)号：US08607440B2
公开(公告)日：2013-12-17
申请号：US13120804
申请日：2009-07-27
申请人： Toshiaki Fujita , Kazutaka Fujiwara , Takashi Yamaguchi
发明人： Toshiaki Fujita , Kazutaka Fujiwara , Takashi Yamaguchi
IPC分类号： H01K7/02 , H01K7/04
CPC分类号： H01C7/008 , C04B35/42 , C04B35/62685 , C04B37/021 , C04B2235/3208 , C04B2235/3225 , C04B2235/3227 , C04B2235/3267 , C04B2235/6021 , C04B2235/9623 , C04B2237/345 , C04B2237/408 , C04B2237/62 , C04B2237/84 , H01C7/04
摘要： Disclosed is a manufacturing method for a thermistor element having a step wherein a thermistor raw material powder formed from a metal oxide, an organic binder powder, and a solvent are mixed and kneaded to form a clay, a step wherein the clay is extrusion-molded by means of a molding die to form a rod-shaped, green molded body having multiple through-holes, a step wherein the rod-shaped green molded body is dried to form a rod-shaped dried molded body, a step wherein the rod-shaped dried formed body is cut to a prescribed length to form a cut molded body having through-holes, and a step wherein lead wires are introduced into the through-holes of the cut molded body and firing is then performed to form a metal oxide sintered body for thermistor use from the cut molded body.
摘要翻译：公开了一种具有以下步骤的热敏电阻元件的制造方法：其中将由金属氧化物，有机粘合剂粉末和溶剂形成的热敏电阻原料粉末混合并捏合以形成粘土，其中将粘土挤出成型通过成型模具形成具有多个通孔的棒状的绿色成形体，将棒状的生坯成型体干燥形成棒状的干燥成形体的工序，将成形干燥的成形体切割成规定长度以形成具有通孔的切割成型体，以及将导线引入切割成型体的通孔并进行烧成以形成金属氧化物烧结体的步骤用于从切割成型体使用热敏电阻的主体。

9. 发明申请

US20100134238A1 METAL OXIDE SINTERED COMPACT FOR THERMISTOR, THERMISTOR ELEMENT, THERMISOR TEMPERATURE SENSOR, AND MANUFACTURING METHOD FOR METAL OXIDE SINTERED COMPACT FOR THERMISTOR 有权
标题翻译：用于热敏电阻的金属氧化物烧结紧固件，热敏元件，温度传感器以及用于热敏电阻的金属氧化物烧结紧固件的制造方法
公开(公告)号：US20100134238A1
公开(公告)日：2010-06-03
申请号：US12452924
申请日：2008-07-31
申请人： Kazutaka Fujiwara , Toshiaki Fujita
发明人： Kazutaka Fujiwara , Toshiaki Fujita
IPC分类号： H01C7/108
CPC分类号： H01C7/008 , C04B35/016 , C04B35/42 , C04B2235/3225 , C04B2235/3227 , C04B2235/3241 , C04B2235/3267 , C04B2235/80 , H01C7/043 , H01C17/06533
摘要： A metal oxide sintered compact used for a thermistor includes a composite oxide represented by the general expression La(Cr1-xMnx)O3 (with x=0.0 to 0.6). Furthermore, the thermistor element 3 includes the metal oxide sintered compact 2 for a thermistor and a pair of leads 1, one terminal of each of which is fixed to the metal oxide sintered compact 2 for a thermistor.
摘要翻译：用于热敏电阻的金属氧化物烧结体包括由通式La（Cr1-xMnx）O3（x = 0.0-0.6）表示的复合氧化物。此外，热敏电阻元件3包括用于热敏电阻的金属氧化物烧结体2和一对引线1，其一个端子固定在用于热敏电阻的金属氧化物烧结体2上。

10. 发明授权

US4923100A Process for producing clad sheets 失效
标题翻译：生产复合板的工艺
公开(公告)号：US4923100A
公开(公告)日：1990-05-08
申请号：US271503
申请日：1988-11-15
申请人： Yasuyuki Nakamura , Akio Hashimoto , Toshiaki Fujita , Makoto Kawakami
发明人： Yasuyuki Nakamura , Akio Hashimoto , Toshiaki Fujita , Makoto Kawakami
IPC分类号： B23K20/04 , B23K26/08 , B32B15/01 , C23C26/00 , C23C28/02 , H01L21/48 , H01L23/495
CPC分类号： C23C28/021 , B23K20/04 , B23K26/0846 , B32B15/01 , C23C26/00 , C23C28/023 , H01L21/4821 , H01L23/49582 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48247 , H01L2224/48639 , H01L2224/48739 , H01L2224/85439 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01025 , H01L2924/01028 , H01L2924/01039 , H01L2924/01057 , H01L2924/01079 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/16152 , H01L2924/3025 , Y10S148/903 , Y10S428/931 , Y10T428/12472 , Y10T428/12479
摘要： A clad sheet comprising a metal substrate and a metal cladding layer laminated on at least one surface of said substrate, wherein said cladding layer-laminated surface of said substrate includes a hardened layer portion formed by melting and rapid solidification through laser beam irradiation. In intermediate layer may be interposed between the substrate and the cladding layer through like hardened layer portion. Lamination is made by cold-cladding layer elements after irradiating any one of layer elements with laser beam to produce strong bonding through uniform microcrack formed in the hardened layer portion of several micrometer thick. The clad sheets are useful for making IC lead frames, for which the substrate is conductor metal and the cladding layer is solder applied to partial area of the substrate. The irradiation and cladding process is carried out continuously with a reduced draft.

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