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1. 发明授权

US5849092A Process for chlorine trifluoride chamber cleaning 失效
标题翻译：三氟化氯室清洗工艺
公开(公告)号：US5849092A
公开(公告)日：1998-12-15
申请号：US805459
申请日：1997-02-25
申请人： Ming Xi , Kazuhiro Nishina , Steve (Aihua) Chen , Toshiaki Fujita
发明人： Ming Xi , Kazuhiro Nishina , Steve (Aihua) Chen , Toshiaki Fujita
IPC分类号： C23C16/44 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/285 , B08B7/00 , B08B9/00
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S438/905
摘要： A method for removing particles and residue that build up inside a substrate processing system during a substrate processing operation, without overetching system components, is described. One method includes the steps of: flowing an etchant gas comprising chlorine trifluoride (CIF.sub.3), diluted with an inert carrier gas, into a processing chamber after completion of the substrate processing operation. The parts of the system within the chamber with the greatest amount of build-up are preferentially heated to facilitate more extensive cleaning of those parts. Parts of the system within the chamber with less build up are protected from overetching by keeping them about 200.degree. C. cooler than the heavily-deposited parts. Heating the heavily-deposited chamber parts to a temperature of at least about 400.degree. C. allows using a lower concentration of etchant gas for the cleaning process than a lower temperature process would allow. The etchant gas reacts with both particles and residue in the chamber, reducing both particulate-related defects and deposition build-up. Another method includes blanketing lightly-deposited areas of the chamber with a nonreactive gas to displace and dilute the etchant gas from these areas for part of the cleaning process, while heavily-deposited areas are exposed to a higher concentration of the etchant gas for a longer period of time. The blanketing gas is turned off for another part of the cleaning process so that these areas are also cleaned.
摘要翻译：描述了在基板处理操作期间在基板处理系统内积聚的颗粒和残余物的清除方法，而不用过滤系统部件。一种方法包括以下步骤：在完成基板处理操作之后，使包含用惰性载气稀释的三氟化氯（CIF3）的蚀刻剂气体流入处理室。具有最大累积量的室内的系统部分被优先加热以便于对这些部件进行更广泛的清洁。室内较少堆积的室内部分系统通过保持其比重沉积部分冷却约200℃来保护免于过蚀刻。将重沉积的室部件加热到至少约400℃的温度，允许使用较低浓度的蚀刻剂气体用于清洁过程，而不是较低温度过程将允许。蚀刻剂气体与室中的颗粒和残余物反应，减少了颗粒相关缺陷和沉积物积聚。另一种方法包括用非反应性气体覆盖室内轻度沉积的区域，以便从这些区域置换和稀释蚀刻剂气体用于部分清洁过程，同时沉积的区域暴露于较高浓度的蚀刻剂气体较长时间一段的时间。对于清洁过程的另一部分，遮盖气体被关闭，使得这些区域也被清洁。

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