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1. 发明申请

US20130192524A1 Continuous Substrate Processing System 有权
标题翻译：连续基板加工系统
公开(公告)号：US20130192524A1
公开(公告)日：2013-08-01
申请号：US13755891
申请日：2013-01-31
申请人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
发明人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
IPC分类号： H01L21/673
CPC分类号： H01L21/673 , C23C16/45546 , C23C16/4558 , C23C16/4584 , C23C16/54 , H01L21/67346 , H01L21/677
摘要： A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.
摘要翻译：提供一种处理室，其具有堆叠在其中的多个可移动基板载体，用于连续处理多个基板。可移动衬底载体能够从处理室的外部传送，例如从负载运送室转移到处理室中并且从处理室中输送，例如被转移到另一负载运送室中。输送到处理室中的工艺气体在空间上分离成多个处理槽，和/或在时间上被控制。处理室可以是多室衬底处理系统的一部分。

2. 发明申请

US20130192761A1 Rotary Substrate Processing System 审中-公开
标题翻译：旋转底材加工系统
公开(公告)号：US20130192761A1
公开(公告)日：2013-08-01
申请号：US13754733
申请日：2013-01-30
申请人： Joseph Yudovsky , Ralf Hofmann , Jeonghoon Oh , Li-Qun Xia , Toshiaki Fujita , Pravin K. Narwankar , Nag B, Patibandla , Srinivas Satya , Banqiu Wu
发明人： Joseph Yudovsky , Ralf Hofmann , Jeonghoon Oh , Li-Qun Xia , Toshiaki Fujita , Pravin K. Narwankar , Nag B, Patibandla , Srinivas Satya , Banqiu Wu
IPC分类号： C23C16/54 , B05C13/00
CPC分类号： C23C16/54 , B05C13/00 , C23C16/45551
摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.
摘要翻译：提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。每个衬底位于设置在衬底支撑组件上的衬底载体上。多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。

3. 发明授权

US09748125B2 Continuous substrate processing system 有权
公开(公告)号：US09748125B2
公开(公告)日：2017-08-29
申请号：US13755891
申请日：2013-01-31
申请人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
发明人： Banqiu Wu , Nag B. Patibandla , Toshiaki Fujita , Ralf Hofmann , Pravin K. Narwankar , Jeonghoon Oh , Srinivas Satya , Li-Qun Xia
IPC分类号： C23C16/00 , H01L21/00 , H01L21/673 , H01L21/677 , C23C16/455 , C23C16/458 , C23C16/54
CPC分类号： H01L21/673 , C23C16/45546 , C23C16/4558 , C23C16/4584 , C23C16/54 , H01L21/67346 , H01L21/677
摘要： A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

4. 发明申请

US20130196078A1 Multi-Chamber Substrate Processing System 审中-公开
标题翻译：多腔基底处理系统
公开(公告)号：US20130196078A1
公开(公告)日：2013-08-01
申请号：US13754771
申请日：2013-01-30
申请人： Joseph Yudovsky , Nag B. Patibandla , Pravin K. Narwankar , Li-Qun Xia , Toshiaki Fujita , Ralf Hofmann , Jeonghoon Oh , Srinivas Satya , Banqiu Wu
发明人： Joseph Yudovsky , Nag B. Patibandla , Pravin K. Narwankar , Li-Qun Xia , Toshiaki Fujita , Ralf Hofmann , Jeonghoon Oh , Srinivas Satya , Banqiu Wu
IPC分类号： C23C16/458
CPC分类号： C23C16/4584 , C23C16/45519 , C23C16/45551 , C23C16/54 , H01L21/67742
摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one substrate processing platform and at least one substrate staging platform. The substrate processing platform includes a rotary track system capable of supporting multiple substrate support assemblies and continuously rotating the substrate support assemblies, each carrying a substrate thereon. Each substrate is positioned on a substrates support assembly disposed on the rotary track system and being processed through at least one shower head station and at least one buffer station, which are positioned atop the rotary track system of the substrate processing platform. Multiple substrates disposed on the substrate support assemblies are processed in and out the substrate processing platform. The substrate staging platform includes at least one dual-substrate processing station, each dual-substrate processing station includes two substrate support assemblies for supporting two substrates thereon.
摘要翻译：提供了用于处理多个基板的基板处理系统，并且通常包括至少一个基板处理平台和至少一个基板分段平台。基板处理平台包括能够支撑多个基板支撑组件并且连续旋转基板支撑组件的旋转轨道系统，每个基板支撑组件在其上承载基板。每个基板定位在设置在旋转轨道系统上的基板支撑组件上，并且通过位于基板处理平台的旋转轨道系统顶部的至少一个喷头站和至少一个缓冲站进行处理。设置在基板支撑组件上的多个基板在基板处理平台内进出处理。衬底分级平台包括至少一个双衬底处理站，每个双衬底处理站包括用于在其上支撑两个衬底的两个衬底支撑组件。

5. 发明申请

US20160286689A1 Cooling method for a 3D IC computer system 审中-公开
公开(公告)号：US20160286689A1
公开(公告)日：2016-09-29
申请号：US14672191
申请日：2015-03-29
申请人： Banqiu Wu , Ming Xu
发明人： Banqiu Wu , Ming Xu
IPC分类号： H05K7/20
CPC分类号： H05K7/2079 , G06F1/20 , G06F1/206 , H05K7/20 , H05K7/20218 , H05K7/20709 , H05K7/20763 , H05K7/20772
摘要： A computer system using 3D IC is cooled by using liquid coolants such as water, oil, and ionic liquid. Liquid coolant flows in a closed coolant conduit which is configured thermally to contact heat-generating components and a liquid-liquid heat exchanger. The heat generated in 3D IC chips is carried out by liquid coolant and dissipated to heat exchanger where cooling water dissipates heat to large water body. For economic stable operation, cooling water is pumped from large water body such as river to a water tower where water level is kept constant to ensure heat exchanger work at optimal condition. The simple approach for computer system cooling provided in this disclosure is a cost-effective data center efficiency solution.

6. 发明申请

US20140065797A1 IN-SITU DEPOSITED MASK LAYER FOR DEVICE SINGULATION BY LASER SCRIBING AND PLASMA ETCH 审中-公开
标题翻译：用于激光扫描和等离子体蚀刻的器件结合的现场沉积掩模层
公开(公告)号：US20140065797A1
公开(公告)日：2014-03-06
申请号：US14072653
申请日：2013-11-05
申请人： Madhava Rao Yalamanchili , Wei-Sheng Lei , Brad Eaton , Saravjeet Singh , Ajay Kumar , Banqiu Wu
发明人： Madhava Rao Yalamanchili , Wei-Sheng Lei , Brad Eaton , Saravjeet Singh , Ajay Kumar , Banqiu Wu
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/30655 , H01L21/3086 , H01L21/67207
摘要： Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off.
摘要翻译：通过激光划线和等离子体蚀刻来切割基板的方法。一种方法包括通过累积等离子体沉积聚合物的厚度来形成具有等离子体蚀刻室的原位掩模，以保护IC凸起表面免于随后的等离子体蚀刻。可以与等离子体沉积的聚合物一起使用第二掩模材料，例如水溶性掩模材料。用飞秒激光划线工艺对掩模的至少一部分进行图案化以提供具有沟槽的图案化掩模。在IC之间的衬底的图案化曝光区域中，其中衬底被等离子体蚀刻以分离IC和水溶性材料层被洗掉。

7. 发明申请

US20140045103A1 METHODS FOR CONTROLLING DEFECTS FOR EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) PHOTOMASK SUBSTRATE 有权
标题翻译：控制超极紫外光刻（EUVL）光电子基板缺陷的方法
公开(公告)号：US20140045103A1
公开(公告)日：2014-02-13
申请号：US13774010
申请日：2013-02-22
申请人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/22 , G03F1/60
摘要： Methods for providing a silicon layer on a photomask substrate surface with minimum defeats for fabricating film stack thereon for EUVL applications are provided. In one embodiment, a method for forming a silicon layer on a photomask substrate includes performing an oxidation process to form a silicon oxide layer on a surface of a first substrate wherein the first substrate comprises a crystalline silicon material, performing an ion implantation process to define a cleavage plane in the first substrate, and bonding the silicon oxide layer to a surface of a second substrate, wherein the second substrate is a quartz photomask.
摘要翻译：提供了用于在光掩模衬底表面上提供硅层的方法，其中用于在EUVL应用中制造膜堆叠的最小失败。在一个实施例中，在光掩模衬底上形成硅层的方法包括在第一衬底的表面上执行氧化处理以形成氧化硅层，其中第一衬底包括结晶硅材料，执行离子注入工艺以界定在第一衬底中的解理面，并将氧化硅层接合到第二衬底的表面，其中第二衬底是石英光掩模。

8. 发明申请

US20120318773A1 METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS WITH ENHANCED ELECTRON SPIN CONTROL 审中-公开
标题翻译：用于控制光电子束宽度粗糙度的方法和装置，具有增强的电子旋转控制
公开(公告)号：US20120318773A1
公开(公告)日：2012-12-20
申请号：US13455753
申请日：2012-04-25
申请人： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
IPC分类号： B44C1/22 , B05C13/00
CPC分类号： H01J37/32669 , H01J37/32009 , H01J37/32422 , H01J37/3244 , H01L21/0273 , H01L21/31144
摘要： The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.
摘要翻译：本发明提供了通过增强的电子纺丝控制来控制和修改光致抗蚀剂层的线宽粗糙度（LWR）的方法和装置。在一个实施例中，用于控制设置在基板上的光致抗蚀剂层的线宽粗糙度的装置包括处理室，该处理室具有室主体，该室主体具有限定内部处理区域的顶壁，侧壁和底壁，处理室的内部处理区域和设置在处理室中的等离子体发生器源，其可操作以主要向内部处理区域提供电子束源。

9. 发明授权

US08002899B2 Method and apparatus for mask pellicle adhesive residue cleaning 失效
标题翻译：面具防护薄膜胶粘剂残留物清洗方法和装置
公开(公告)号：US08002899B2
公开(公告)日：2011-08-23
申请号：US12242472
申请日：2008-09-30
申请人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
发明人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
IPC分类号： B08B7/04 , B08B7/00
CPC分类号： B08B3/02 , B08B1/00 , B08B11/02 , G03F1/82 , Y10S134/902
摘要： Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly. In another embodiment, a method of cleaning a periphery region of a photomask substrate includes providing a photomask substrate having a periphery portion and a center portion disposed on a support assembly in a processing cell, lowering a protection cover disposed in the processing cell to cover the center portion of the photomask substrate, providing a brush in the processing cell to clean the periphery portion of the photomask substrate.
摘要翻译：本发明的方面通常提供用于清洁光掩模基底上的粘合剂残留物的方法和装置。在一个实施例中，该设备包括处理单元，配置成接收布置在其上设置在处理单元中的光掩模基板的支撑组件，设置在支撑组件上方并面向支撑组件的保护头组件，以及头部致动器，保护头组件相对于支撑组件的上表面。提供清洁装置并定位成与设置在支撑组件上的光掩模基板相互作用。在另一个实施例中，一种清洁光掩模基板的外围区域的方法包括提供具有周边部分的光掩模基板和设置在处理单元中的支撑组件上的中心部分，降低设置在处理单元中的保护盖以覆盖在光掩模基板的中心部分，在处理单元中提供刷子以清洁光掩模基板的周边部分。

10. 发明授权

US08962224B2 Methods for controlling defects for extreme ultraviolet lithography (EUVL) photomask substrate 有权
标题翻译：用于控制极紫外光刻（EUVL）光掩模基板的缺陷的方法
公开(公告)号：US08962224B2
公开(公告)日：2015-02-24
申请号：US13774010
申请日：2013-02-22
申请人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/22 , G03F1/60
摘要： Methods for providing a silicon layer on a photomask substrate surface with minimum defeats for fabricating film stack thereon for EUVL applications are provided. In one embodiment, a method for forming a silicon layer on a photomask substrate includes performing an oxidation process to form a silicon oxide layer on a surface of a first substrate wherein the first substrate comprises a crystalline silicon material, performing an ion implantation process to define a cleavage plane in the first substrate, and bonding the silicon oxide layer to a surface of a second substrate, wherein the second substrate is a quartz photomask.
摘要翻译：提供了用于在光掩模衬底表面上提供硅层的方法，其中用于在EUVL应用中制造膜堆叠的最小失败。在一个实施例中，在光掩模衬底上形成硅层的方法包括在第一衬底的表面上执行氧化处理以形成氧化硅层，其中第一衬底包括结晶硅材料，执行离子注入工艺以界定在第一衬底中的解理面，并将氧化硅层接合到第二衬底的表面，其中第二衬底是石英光掩模。

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