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1. 发明申请

US20070105259A1 Growth method of indium gallium nitride 审中-公开
标题翻译：氮化铟镓的生长方法
公开(公告)号：US20070105259A1
公开(公告)日：2007-05-10
申请号：US11591455
申请日：2006-11-02
申请人： Jong Won , Masayoshi Koike , Jae Han , Seong Lee
发明人： Jong Won , Masayoshi Koike , Jae Han , Seong Lee
IPC分类号： H01L21/205
CPC分类号： C30B29/403 , C30B25/02 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for growing a high quality indium gallium nitride by metal organic chemical vapor deposition (MOCVD) is provided. In the method, the indium gallium nitride grows at a growth rate of at least about 1.5 nm/min at a temperature of at least about 800° C. while an internal pressure of an MOCVD reactor is maintained at about 400 mbar or less.
摘要翻译：提供了通过金属有机化学气相沉积（MOCVD）生长高品质氮化铟镓的方法。在该方法中，氮化镓铟在至少约800℃的温度下以至少约1.5nm / min的生长速率生长，同时MOCVD反应器的内部压力保持在约400毫巴或更小。

2. 发明申请

US20060091408A1 Nitride based semiconductor device using nanorods and process for preparing the same 有权
标题翻译：使用纳米棒的基于氮化物的半导体器件及其制备方法
公开(公告)号：US20060091408A1
公开(公告)日：2006-05-04
申请号：US11204226
申请日：2005-08-16
申请人： Min Kim , Masayoshi Koike , Kyeong Min , Seong Lee , Sung Jang
发明人： Min Kim , Masayoshi Koike , Kyeong Min , Seong Lee , Sung Jang
IPC分类号： H01L29/22
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
摘要翻译：公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

3. 发明授权

US09142619B2 Group III nitride semiconductor device and method for manufacturing the same 有权
标题翻译： III族氮化物半导体器件及其制造方法
公开(公告)号：US09142619B2
公开(公告)日：2015-09-22
申请号：US13704963
申请日：2011-11-25
申请人： Tsukasa Kitano , Koichi Naniwae , Masayoshi Koike , Fumiharu Teramae , Toshiyuki Kondo , Atsushi Suzuki , Tomohiko Maeda , Midori Mori
发明人： Tsukasa Kitano , Koichi Naniwae , Masayoshi Koike , Fumiharu Teramae , Toshiyuki Kondo , Atsushi Suzuki , Tomohiko Maeda , Midori Mori
IPC分类号： H01L29/16 , H01L21/02 , H01L33/00 , H01L33/20 , H01L33/32
CPC分类号： H01L29/1608 , H01L21/02107 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/02631 , H01L21/02639 , H01L33/007 , H01L33/12 , H01L33/20 , H01L33/32
摘要： [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced.[Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.
摘要翻译： [问题]提供可以精确地减少半导体层中的位错密度的III族氮化物半导体器件及其制造方法。 [解决方案]在制造III族氮化物半导体器件1中，在衬底20上形成掩模层40，然后通过掩模层40的图案44选择性地生长由III族氮化物半导体制成的纳米柱50，以生长掩模层40上的III族氮化物半导体层10。

4. 发明授权

US08546834B2 LED package 有权
标题翻译： LED封装
公开(公告)号：US08546834B2
公开(公告)日：2013-10-01
申请号：US11783788
申请日：2007-04-12
申请人： Masayoshi Koike , Bum Joon Kim
发明人： Masayoshi Koike , Bum Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/483 , H01L2924/0002 , H01L2924/00
摘要： An LED package improved in efficiency and brightness. In the package, a body has a mounting part thereon. A plurality of light emitting diode chips are mounted on the mounting part. The mounting part has a cross-section upwardly convexed with a non-planar top portion so that at least two adjacent ones of the light emitting diode chips have opposing side surfaces facing a different direction from each other.
摘要翻译： LED封装提高了效率和亮度。在包装中，主体在其上具有安装部分。多个发光二极管芯片安装在安装部分上。安装部分具有向上凸起的非平面顶部部分的横截面，使得至少两个相邻的发光二极管芯片具有面向彼此不同方向的相对侧表面。

5. 发明授权

US07943492B2 Method of forming nitride film and nitride structure 有权
标题翻译：形成氮化物膜和氮化物结构的方法
公开(公告)号：US07943492B2
公开(公告)日：2011-05-17
申请号：US11790125
申请日：2007-04-24
申请人： Jaeun Yoo , Hyung Soo Ahn , Min Yang , Masayoshi Koike
发明人： Jaeun Yoo , Hyung Soo Ahn , Min Yang , Masayoshi Koike
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0254 , H01L21/02543 , H01L21/02576 , H01L21/0262
摘要： A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.
摘要翻译：一种通过氢化物气相外延形成氮化物膜的方法，所述方法包括：在外部反应室和依次位于气体供给方向上的内部反应室中依次配置至少一种包括杂质的III族金属源和基板，在生长温度下加热外部反应室和内部反应室; 通过向外部反应室中供应氯化氢气体和载气而与III族金属源反应并将金属氯化物转移到基底上形成金属氯化物; 以及通过使转移的金属氯化物与供应到内部反应室的氮源气体反应，在衬底上形成掺杂有杂质的氮化物膜。

6. 发明授权

US07737429B2 Nitride based semiconductor device using nanorods and process for preparing the same 有权
标题翻译：使用纳米棒的基于氮化物的半导体器件及其制备方法
公开(公告)号：US07737429B2
公开(公告)日：2010-06-15
申请号：US11204226
申请日：2005-08-16
申请人： Min Ho Kim , Masayoshi Koike , Kyeong Ik Min , Seong Suk Lee , Sung Hwan Jang
发明人： Min Ho Kim , Masayoshi Koike , Kyeong Ik Min , Seong Suk Lee , Sung Hwan Jang
IPC分类号： H01L29/06
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
摘要翻译：公开了一种氮化物基半导体器件及其制备方法，其包括在硅衬底上形成的高质量GaN层。根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

7. 发明授权

US07348200B2 Method of growing non-polar a-plane gallium nitride 有权
标题翻译：生长非极性a面平面氮化镓的方法
公开(公告)号：US07348200B2
公开(公告)日：2008-03-25
申请号：US11368184
申请日：2006-03-03
申请人： Soo Min Lee , Rak Jun Choi , Naoi Yoshiki , Sakai Shiro , Masayoshi Koike
发明人： Soo Min Lee , Rak Jun Choi , Naoi Yoshiki , Sakai Shiro , Masayoshi Koike
IPC分类号： H01L21/00
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262
摘要： The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium nitride, a gallium source is supplied at a flow rate of about 190 to 390 μmol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.
摘要翻译：本发明提供一种生长非极性a-平面氮化镓的方法。在该方法中，首先，准备r面基板。然后，在基板上沉积低温氮化物基成核层。最后，在成核层上生长非极性a面平面氮化镓。在生长非极性a面平面氮化镓的过程中，以约190〜390微摩尔/分钟的流量供给镓源，将氮源的流量设定为产生约770〜 2310。

8. 发明授权

US07186579B2 Method for producing a group III nitride compound semiconductor laser 有权
标题翻译： III族氮化物半导体激光器的制造方法
公开(公告)号：US07186579B2
公开(公告)日：2007-03-06
申请号：US10924999
申请日：2004-08-25
申请人： Takashi Hatano , Sho Iwayama , Masayoshi Koike
发明人： Takashi Hatano , Sho Iwayama , Masayoshi Koike
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/209 , H01S5/22 , H01S5/34333 , H01S2301/18
摘要： A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.
摘要翻译：半导体激光器包括蓝宝石衬底，AlN缓冲层，Si掺杂的GaN n层，Si掺杂的Al 0.1 Ga 0.9 N n包层，Si- 掺杂GaN n引导层，具有多个量子阱（MQW）结构的有源层，其中GaN阻挡层62的厚度约为35，Ga Ga 2 O 3的厚度为约35。 0.05N的N阱层61交替层叠，Mg掺杂的GaN p导向层，掺杂了Mg的Al 0.25 N Ga 0.75 N p层，Mg- 掺杂的Al 0.1 Ga 0.9 N p包覆层和Mg掺杂的GaN p接触层。与脊状激光腔部A接触的脊状空穴注入部B形成为与Ni电极的宽度w相同的宽度。因为p层具有较大的铝组成，所以蚀刻速率变小，并且可以防止在该蚀刻工艺中损坏p导向层。

9. 发明申请

US20060267026A1 White light emitting device 有权
公开(公告)号：US20060267026A1
公开(公告)日：2006-11-30
申请号：US11442961
申请日：2006-05-31
申请人： Min Kim , Masayoshi Koike , Kyeong Min , Myong Cho
发明人： Min Kim , Masayoshi Koike , Kyeong Min , Myong Cho
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01L25/0756 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

10. 发明授权

US07141444B2 Production method of III nitride compound semiconductor and III nitride compound semiconductor element 失效
公开(公告)号：US07141444B2
公开(公告)日：2006-11-28
申请号：US10221486
申请日：2001-03-12
申请人： Masayoshi Koike , Yuta Tezen , Hiroshi Yamashita , Seiji Nagai , Toshio Hiramatsu
发明人： Masayoshi Koike , Yuta Tezen , Hiroshi Yamashita , Seiji Nagai , Toshio Hiramatsu
IPC分类号： H01L21/00
CPC分类号： H01L21/0265 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647
摘要： A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/mesa such that layer different from the first Group III nitride compound semiconductor layer 31 is exposed at the bottom portion of the trench. Thus, a second Group III nitride compound layer 32 can be epitaxially grown, laterally, with a top surface of the mesa and a sidewall/sidewalls of the trench serving as a nucleus, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layer 31 can be prevented in the upper portion of the second Group III nitride compound semiconductor 32 that is formed through lateral epitaxial growth. Etching may be performed until a cavity portion is provided in the substrate. The layer serving as a nucleus of ELO may be doped with indium (In) having an atomic radius greater than that of gallium (Ga) serving as a predominant element. The first semiconductor layer may be a multi-component layer containing a plurality of numbers of repetitions of a unit of a buffer layer and a single-crystal layer.

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