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1. 发明申请

US20060091408A1 Nitride based semiconductor device using nanorods and process for preparing the same 有权
标题翻译：使用纳米棒的基于氮化物的半导体器件及其制备方法
公开(公告)号：US20060091408A1
公开(公告)日：2006-05-04
申请号：US11204226
申请日：2005-08-16
申请人： Min Kim , Masayoshi Koike , Kyeong Min , Seong Lee , Sung Jang
发明人： Min Kim , Masayoshi Koike , Kyeong Min , Seong Lee , Sung Jang
IPC分类号： H01L29/22
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
摘要翻译：公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

2. 发明申请

US20070007541A1 White light emitting device 审中-公开
标题翻译：白色发光装置
公开(公告)号：US20070007541A1
公开(公告)日：2007-01-11
申请号：US11331751
申请日：2006-01-13
申请人： Min Kim , Kyeong Min , Masayoshi Koike
发明人： Min Kim , Kyeong Min , Masayoshi Koike
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/06 , H01L33/32
摘要： The invention relates to a nitride light emitting device including first and second conductivity type nitride layers and a plurality of active regions emitting light of different wavelength. The active regions are sequentially formed between the first and the second conductivity type nitride layers. The active regions include at least one first active region having a plurality of first quantum barrier layers and quantum well layers, and a second active region emitting light of a wavelength larger than that of the first active region. The second active region has a plurality of second quantum barrier layers and at least one discontinuous quantum well structure formed between the plurality of second quantum barrier layers. The discontinuous quantum well structure comprises a plurality of quantum dots or crystallites.
摘要翻译：本发明涉及包括第一和第二导电型氮化物层和发射不同波长的光的多个有源区的氮化物发光器件。有源区依次形成在第一和第二导电型氮化物层之间。有源区包括具有多个第一量子势垒层和量子阱层的至少一个第一有源区和发射波长大于第一有源区的波长的光的第二有源区。第二有源区具有多个第二量子势垒层和形成在多个第二量子势垒层之间的至少一个不连续量子阱结构。不连续量子阱结构包括多个量子点或微晶。

3. 发明申请

US20060267026A1 White light emitting device 有权
公开(公告)号：US20060267026A1
公开(公告)日：2006-11-30
申请号：US11442961
申请日：2006-05-31
申请人： Min Kim , Masayoshi Koike , Kyeong Min , Myong Cho
发明人： Min Kim , Masayoshi Koike , Kyeong Min , Myong Cho
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01L25/0756 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

4. 发明申请

US20070114540A1 Nitride semiconductor light emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070114540A1
公开(公告)日：2007-05-24
申请号：US11600870
申请日：2006-11-17
申请人： Seong Lee , Kyeong Min , Soo Kim , Min Kim
发明人： Seong Lee , Kyeong Min , Soo Kim , Min Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which comprises plural active layers emitting light of different wavelengths. The device comprises p-type and n-type nitride layers, and a plurality of active layers sequentially stacked between the p-type and n-type nitride layers to emit light having different wavelengths. The active layers comprise at least a first active layer to emit a first wavelength light, and a second active layer to emit a second wavelength light, of which wavelength is longer than that of the first wavelength light. Both the first and second active layers are composed of at least one quantum well layer and a quantum barrier layer alternately arranged, and the first active layer is disposed closer to the p-type nitride layer than the second active layer. The number of quantum well layers of the first active layer is less than that of the second active layer.
摘要翻译：本文公开了一种氮化物半导体发光器件，其包括发射不同波长的光的多个有源层。该器件包括p型和n型氮化物层，以及顺序堆叠在p型和n型氮化物层之间以发射具有不同波长的光的多个有源层。有源层至少包括发射第一波长光的第一有源层和发射波长比第一波长光长的第二波长光的第二有源层。第一和第二有源层都由交替布置的至少一个量子阱层和量子势垒层构成，并且第一有源层设置成比第二有源层更靠近p型氮化物层。第一有源层的量子阱层的数量小于第二有源层的量子阱层的数量。

5. 发明申请

US20050241571A1 Method of growing nitride single crystal on silicon substrate, nitride semiconductor light emitting device using the same, method of manufacturing the same 审中-公开
标题翻译：在硅衬底上生长氮化物单晶的方法，使用其的氮化物半导体发光器件，其制造方法
公开(公告)号：US20050241571A1
公开(公告)日：2005-11-03
申请号：US11007206
申请日：2004-12-09
申请人： Min Kim , Masayoshi Koike , Hun Hahm
发明人： Min Kim , Masayoshi Koike , Hun Hahm
IPC分类号： C30B29/38 , C23C16/34 , C30B25/00 , C30B25/02 , C30B25/18 , H01L21/20 , H01L21/205 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/34
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406
摘要： A method of growing a nitride single crystal layer, and a method of manufacturing a light emitting device using the method are disclosed. The method of growing a nitride single crystal layer comprises the steps of preparing a silicon substrate having an upper surface of a crystal plane (111), forming a buffer layer having the formula of SixGe1-x, (where 0
摘要翻译：公开了一种生长氮化物单晶层的方法，以及使用该方法制造发光器件的方法。生长氮化物单晶层的方法包括以下步骤：制备具有晶面（111）的上表面的硅衬底，形成具有下式的缓冲层：Si＆lt; 1 x x，（其中0

6. 发明申请

US20050218416A1 Nitride semiconductor light-emitting device and process for producing the same 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20050218416A1
公开(公告)日：2005-10-06
申请号：US10898204
申请日：2004-07-26
申请人： Dong Cho , Masayoshi Koike , Yuji Imai , Min Kim , Bang Oh , Hun Hahm
发明人： Dong Cho , Masayoshi Koike , Yuji Imai , Min Kim , Bang Oh , Hun Hahm
IPC分类号： H01L21/00 , H01L21/20 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42 , H01L33/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647
摘要： Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.
摘要翻译：提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。

7. 外观设计

USD921451S1 Whisk 有权
公开(公告)号：USD921451S1
公开(公告)日：2021-06-08
申请号：US29702274
申请日：2019-08-18
申请人： Min Kim , Edward Lee , Mason Adam Umholtz , Austin Ledzian , Marc-Aurelien Vivant
设计人： Min Kim , Edward Lee , Mason Adam Umholtz , Austin Ledzian , Marc-Aurelien Vivant

8. 外观设计

USD916501S1 Soap dispenser 有权
公开(公告)号：USD916501S1
公开(公告)日：2021-04-20
申请号：US29686727
申请日：2019-04-07
申请人： William Jack Merrill , Min Kim
设计人： William Jack Merrill , Min Kim

9. 外观设计

USD911787S1 Serving spoon 有权
公开(公告)号：USD911787S1
公开(公告)日：2021-03-02
申请号：US29702277
申请日：2019-08-18
申请人： Min Kim , Edward Lee , Mason Adam Umholtz , Marc-Aurelien Vivant
设计人： Min Kim , Edward Lee , Mason Adam Umholtz , Marc-Aurelien Vivant

10. 外观设计

USD911034S1 Pastry brush 有权
公开(公告)号：USD911034S1
公开(公告)日：2021-02-23
申请号：US29702270
申请日：2019-08-18
申请人： Brandon Rodriguez , Mason Adam Umholtz , Edward Lee , Min Kim , Marc-Aurelien Vivant
设计人： Brandon Rodriguez , Mason Adam Umholtz , Edward Lee , Min Kim , Marc-Aurelien Vivant

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