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1. 发明授权

US5321977A Integrated tip strain sensor for use in combination with a single axis atomic force microscope 失效
公开(公告)号：US5321977A
公开(公告)日：1994-06-21
申请号：US999059
申请日：1992-12-31
申请人： Joachim Clabes , Henri A. Khoury , Laszlo Landstein
发明人： Joachim Clabes , Henri A. Khoury , Laszlo Landstein
IPC分类号： G01B21/30 , G01B7/34 , G01N27/00 , G01N37/00 , G01Q20/04 , G01Q60/24 , G01Q60/38 , G01Q60/42 , G03F7/20 , G01N23/00
CPC分类号： G01Q60/38 , B82Y35/00 , G01B7/012 , G01Q20/04 , G03F7/70633 , Y10S977/852 , Y10S977/878
摘要： An integrated tip strain sensor is combination with a single axis atomic force microscope (AFM) for determining the profile of a surface in three dimensions. A cantilever beam carries an integrated tip stem on which is deposited a piezoelectric film strain sensor. A high-resolution direct electron beam (e-beam) deposition process is used to grow a sharp tip onto the silicon (Si) cantilever structure. The direct e-beam deposition process permits the controllable fabrication of high-aspect ratio, nanometer-scale tip structures. A piezoelectric jacket with four superimposed elements is deposited on the tip stem. The piezoelectric sensors function in a plane perpendicular to that of a probe in the AFM; that is, any tip contact with the linewidth surface will cause tip deflection with a corresponding proportional electrical signal output. This tip strain sensor, coupled to a standard single axis AFM tip, allows for three-dimensional metrology with a much simpler approach while avoiding catastrophic tip "crashes". Two-dimensional edge detection of the sidewalls is used to calculate the absolute value or the linewidth of overlay, independent of the AFM principle. The technique works on any linewidth surface material, whether conductive, non-conductive or semiconductive.

2. 发明授权

US5345816A Integrated tip strain sensor for use in combination with a single axis atomic force microscope 失效
标题翻译：集成尖端应变传感器，与单轴原子力显微镜组合使用
公开(公告)号：US5345816A
公开(公告)日：1994-09-13
申请号：US157800
申请日：1993-11-24
申请人： Joachim Clabes , Henri A. Khoury , Laszlo Landstein
发明人： Joachim Clabes , Henri A. Khoury , Laszlo Landstein
IPC分类号： G01B21/30 , G01B7/34 , G01N27/00 , G01N37/00 , G01Q20/04 , G01Q60/24 , G01Q60/38 , G01Q60/42 , G03F7/20 , G01N23/00
CPC分类号： G01Q60/38 , B82Y35/00 , G01B7/012 , G01Q20/04 , G03F7/70633 , Y10S977/852 , Y10S977/878
摘要： An integrated tip strain sensor is combination with a single axis atomic force microscope (AFM) for determining the profile of a surface in three dimensions. A cantilever beam carries an integrated tip stem on which is deposited a piezoelectric film strain sensor. A high-resolution direct electron beam (e-beam) deposition process is used to grow a sharp tip onto the silicon (Si) cantilever structure. The direct e-beam deposition process permits the controllable fabrication of high-aspect ratio, nanometer-scale tip structures. A piezoelectric jacket with four superimposed elements is deposited on the tip stem. The piezoelectric sensors function in a plane perpendicular to that of a probe in the AFM; that is, any tip contact with the linewidth surface will cause tip deflection with a corresponding proportional electrical signal output. This tip strain sensor, coupled to a standard single axis AFM tip, allows for three-dimensional metrology with a much simpler approach while avoiding catastrophic tip "crashes". Two-dimensional edge detection of the sidewalls is used to calculate the absolute value or the linewidth of overlay, independent of the AFM principle. The technique works on any linewidth surface material, whether conductive, non-conductive or semiconductive.
摘要翻译：集成尖端应变传感器与单轴原子力显微镜（AFM）组合，用于确定三维表面的轮廓。悬臂梁载有集成的尖端杆，其上沉积有压电薄膜应变传感器。使用高分辨率直接电子束（电子束）沉积工艺将锋利的尖端生长到硅（Si）悬臂结构上。直接电子束沉积工艺允许可控制造高纵横比，纳米尺度的尖端结构。具有四个叠加元件的压电护套沉积在尖端杆上。压电传感器在与AFM中的探头垂直的平面中起作用; 也就是说，与线宽表面的任何尖端接触将导致尖端偏转与相应的比例电信号输出。这种尖端应变传感器与标准的单轴AFM尖端相连，允许采用更简单的方法进行三维计量，同时避免灾难性的尖端“崩溃”。使用侧壁的二维边缘检测来计算覆盖层的绝对值或线宽，而与AFM原理无关。该技术适用于任何线宽表面材料，无论是导电，非导电或半导体。

3. 发明授权

US5298975A Combined scanning force microscope and optical metrology tool 失效
标题翻译：组合扫描力显微镜和光学计量工具
公开(公告)号：US5298975A
公开(公告)日：1994-03-29
申请号：US767300
申请日：1991-09-27
申请人： Henri A. Khoury , Calvin K. Chi , Joachim G. Clabes , Philip C. D. Hobbs , Laszlo Landstein , Martin P. O'Boyle , Hemantha K. Wickramasinghe , Sandra K. Wolterman
发明人： Henri A. Khoury , Calvin K. Chi , Joachim G. Clabes , Philip C. D. Hobbs , Laszlo Landstein , Martin P. O'Boyle , Hemantha K. Wickramasinghe , Sandra K. Wolterman
IPC分类号： G01B7/34 , G01B7/00 , G01B11/00 , G01B11/02 , G01B11/30 , G01B21/02 , G01B21/30 , G01M11/00 , G01N37/00 , G01Q20/02 , G01Q20/04 , G01Q30/02 , G01Q60/24 , G03F7/20 , G01B11/04
CPC分类号： G03F7/70633 , B82Y35/00 , G01B11/02 , G01Q20/02 , G01Q30/025 , Y10S977/87
摘要： An integrated scanning force microprobe and optical microscopy metrology system is disclosed, that measures the depth and width of a trench in a sample. The probe remains fixed while the sample is moved relative to the probe. The system detects the proximity of the probe to a sample and to the side walls of the trench, providing output signals indicating the vertical and transverse relationship of the probe to the sample. The system adjusts the relative position of the sample vertically and transversely as a function of the output signals. Variety of probes can be used with this system to detect the depth and width of the trench. The probe should have at least one protuberance extending down to sense the bottom of the trench. The tip of the probe can have Lateral protuberances that can extend in opposite directions (across the width of the trench) from the probe to detect the side walls of the trench. Forces on the protuberances are measured to determine the depth and the location of the side walls of the trench.
摘要翻译：公开了一种集成的扫描力微探针和光学显微术测量系统，其测量样品中的沟槽的深度和宽度。当样品相对于探针移动时，探针保持固定。系统检测探头与样品和沟槽侧壁的接近度，提供指示探针与样品的垂直和横向关系的输出信号。该系统根据输出信号垂直和横向地调整样本的相对位置。该系统可以使用各种探头来检测沟槽的深度和宽度。探针应具有向下延伸的至少一个突起以感测沟槽的底部。探针的尖端可以具有横向突起，其可以从探针沿相反方向（跨越沟槽的宽度）延伸以检测沟槽的侧壁。测量突起上的力以确定沟槽的侧壁的深度和位置。

4. 发明授权

US4600936A Chip registration mechanism 失效
标题翻译：芯片注册机制
公开(公告)号：US4600936A
公开(公告)日：1986-07-15
申请号：US513188
申请日：1983-07-12
申请人： Henri A. Khoury , Bruce E. Tompkins
发明人： Henri A. Khoury , Bruce E. Tompkins
IPC分类号： H01L21/68 , B65D85/57 , B65D85/86 , G05D3/00 , H01L21/67 , H01L21/673 , H01L21/677 , H01L23/42 , H01L23/44 , H01L23/46
CPC分类号： H01L21/67333 , H01L21/67787 , H01L2221/68313 , Y10T29/41
摘要： A chip registration mechanism may form a part of a carrier for retaining in position a plurality of integrated circuit chips in row and column fashion having identification codes on one surface thereof, such that the chip codes may be read and cooperate with a tray having multiple cells, with each cell receiving an individual integrated circuit chip, or function to position a single chip relative to a reference surface for processing. A chip registration base member includes a pedestal projecting upwardly from a base member within a cavity having transverse dimensions oversized relative to the chip and defining at least one lateral reference surface. A lid extends across the top of the member partially defines the cavity above the chip with the chip resting on the top of the pedestal. Inclined nozzles carried by the pedestal function to jet air from the pedestal top surface against the bottom of the chip to create an air film to support the chip and to impart a force laterally to move the edge of the chip against the cavity reference surface. A relief channel about the base of the pedestal open to the atmosphere prevents flutter of the chip and insures accurate registration contact of the edge of the chip against the cavity reference surface. The same nozzle carried by the pedestal function to vacuum the bottom of the chip against the pedestal top surface to clamp the chip in this orientation.
摘要翻译：芯片配准机构可以形成载体的一部分，用于在其表面上具有标识码的行和列方式保持多个集成电路芯片的位置，使得可以读取芯片代码并与具有多个单元的托盘配合每个单元接收单独的集成电路芯片，或者用于相对于参考表面定位单个芯片以用于处理的功能。芯片对准基座构件包括从腔体内的基部构件向上突出的底座，其具有相对于芯片尺寸过大并且限定至少一个横向参考表面的横向尺寸。盖子延伸穿过构件的顶部部分地限定芯片上方的空腔，其中芯片搁置在基座的顶部上。由基座功能承载的倾斜喷嘴将基座顶表面的空气喷射到芯片的底部以产生空气膜以支撑芯片并且横向地施加力以将芯片的边缘移动抵靠空腔参考表面。围绕基座的底座的大致开放通道防止芯片颤动并确保芯片的边缘与空腔参考表面的准确对准接触。由基座功能承载的相同的喷嘴将芯片的底部压靠在基座顶部表面上，以将芯片夹紧在该取向中。

5. 发明授权

US5585629A Electron beam nano-metrology system 失效
标题翻译：电子束纳米计量系统
公开(公告)号：US5585629A
公开(公告)日：1996-12-17
申请号：US584988
申请日：1996-01-11
申请人： Samuel K. Doran , William A. Enichen , Timothy R. Groves , Rodney A. Kendall , Henri A. Khoury , Richard D. Moore , Paul F. Petric , James D. Rockrohr
发明人： Samuel K. Doran , William A. Enichen , Timothy R. Groves , Rodney A. Kendall , Henri A. Khoury , Richard D. Moore , Paul F. Petric , James D. Rockrohr
IPC分类号： G01B15/00 , H01J37/073 , H01J37/08 , H01J37/12 , H01J37/147 , H01J37/20 , H01J37/244 , H01J37/28
CPC分类号： G01B15/00 , H01J37/28 , H01J2237/2814
摘要： An electron beam nanometer-level metrology tool includes an ambient temperature electron source and a movable stage for mounting a workpiece. The stage is adapted to position the workpiece's surface in a beam interrogation region. Electrostatic focus lenses convert electrons emitted by the electron source into a beam with a focal point that is positioned in the beam interrogation region. The lenses cause the electron beam to traverse a path that is generally orthogonal to the workpiece surface. Along the beam path are positioned upper and lower electrostatic deflection plates which are connected to an adjustable voltage source that applies ganged, opposite-sense d/c potentials thereto. Those potentials enable a scanning of the beam across the beam interrogation region while the beam remains substantially orthogonal to the workpiece surface, thereby enabling more accurate measurements of surface features. Within the metrology tool, all beam control surfaces are electrostatic so as to minimize power dissipation and temperature differentials.
摘要翻译：电子束纳米级计量工具包括环境温度电子源和用于安装工件的活动台。该台适于将工件的表面定位在光束询问区域中。静电聚焦透镜将由电子源发射的电子转换成具有位于光束询问区域中的焦点的光束。透镜使电子束穿过大体正交于工件表面的路径。沿着光束路径定位上和下静电偏转板，其连接到可调节的电压源，该可调电压源向其施加组合的，相反的d / c电位。这些电位使得能够在光束询问区域上扫描光束，同时光束保持基本上垂直于工件表面，从而使得能够更精确地测量表面特征。在计量工具中，所有光束控制表面都是静电的，以便最小化功耗和温差。

6. 发明授权

US4659220A Optical inspection system for semiconductor wafers 失效
标题翻译：半导体晶圆光学检测系统
公开(公告)号：US4659220A
公开(公告)日：1987-04-21
申请号：US663292
申请日：1984-10-22
申请人： Joseph J. Bronte , Roland C. Herbert , Henri A. Khoury
发明人： Joseph J. Bronte , Roland C. Herbert , Henri A. Khoury
IPC分类号： G01N21/88 , G01B11/30 , G01N21/93 , G01N21/94 , G01N21/95 , G01N21/956 , H01L21/66 , G01N21/55
CPC分类号： G01N21/9501 , G01N21/95607
摘要： A method and apparatus for automatically detecting defects on the surfaces of semiconductor wafers and chips which provides a 100% inspection capability. The entire surface of each wafer is scanned by use of a low magnification, low resolution detector such as a photodiode array. Whenever a defect occurs, encoders on the supporting XY table are triggered, such that the location of a defect on the wafer is recorded. After the event coordinates have been determined, the XY table positions each defect directly under a high magnification detector to determine the nature of the detected event. Since only the locations of the detected events are stored, 100% of the processed wafers can be scanned for defects.
摘要翻译：一种用于自动检测半导体晶片和芯片表面的缺陷的方法和装置，其提供100％的检查能力。通过使用诸如光电二极管阵列的低放大率低分辨率检测器来扫描每个晶片的整个表面。每当发生故障时，触发支撑XY工作台上的编码器，从而记录晶片上缺陷的位置。在确定事件坐标之后，XY表将每个缺陷直接放置在高放大倍数检测器下方以确定检测到的事件的性质。由于仅存储检测到的事件的位置，因此可以扫描100％的已处理晶片的缺陷。

7. 发明授权

US4493745A Optical emission spectroscopy end point detection in plasma etching 失效
标题翻译：等离子体蚀刻中的光发射光谱终点检测
公开(公告)号：US4493745A
公开(公告)日：1985-01-15
申请号：US575611
申请日：1984-01-31
申请人： Lee Chen , Henri A. Khoury , Harlan R. Seymour
发明人： Lee Chen , Henri A. Khoury , Harlan R. Seymour
IPC分类号： H01L21/302 , C23F4/00 , H01J37/32 , H01L21/3065 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01J37/32935 , C23F4/00
摘要： A method for etching a batch of semiconductor wafers to end point using optical emission spectroscopy is described. The method is applicable to any form of dry plasma etching which produces an emission species capable of being monitored. In a preferred embodiment, as well as a first alternative embodiment, a computer simulation is performed using an algorithm describing the concentration of the monitored etch species within the etching chamber as a function of time. The simulation produces a time period for continuing the etching process past a detected time while monitoring the intensity of emission of the etch species. In a second alternative embodiment, this latter time period is calculated using mathematical distributions describing the parameters of the etching process. In all three embodiments, the actual time that end point of an etching process is reached is closely approximated. In this manner, all wafers in a batch of wafers being etched reach end point while at the same time, the amount of over etching is greatly minimized.
摘要翻译：描述了使用光发射光谱法将一批半导体晶片蚀刻到终点的方法。该方法适用于产生能够被监测的发射物质的任何形式的干等离子体蚀刻。在优选实施例中，以及第一替代实施例，使用描述作为时间的函数的蚀刻室内监测的蚀刻物质的浓度的算法来执行计算机模拟。模拟产生一个时间段，用于在监测蚀刻物质的发射强度的同时，在检测到的时间内继续蚀刻工艺。在第二替代实施例中，使用描述蚀刻工艺的参数的数学分布来计算后一时间段。在所有三个实施例中，达到蚀刻工艺的终点的实际时间是非常接近的。以这种方式，一批待蚀刻的晶片中的所有晶片都到达终点，而同时过度蚀刻的量大大减至最小。

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