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1. 发明授权

US5585629A Electron beam nano-metrology system 失效
标题翻译：电子束纳米计量系统
公开(公告)号：US5585629A
公开(公告)日：1996-12-17
申请号：US584988
申请日：1996-01-11
申请人： Samuel K. Doran , William A. Enichen , Timothy R. Groves , Rodney A. Kendall , Henri A. Khoury , Richard D. Moore , Paul F. Petric , James D. Rockrohr
发明人： Samuel K. Doran , William A. Enichen , Timothy R. Groves , Rodney A. Kendall , Henri A. Khoury , Richard D. Moore , Paul F. Petric , James D. Rockrohr
IPC分类号： G01B15/00 , H01J37/073 , H01J37/08 , H01J37/12 , H01J37/147 , H01J37/20 , H01J37/244 , H01J37/28
CPC分类号： G01B15/00 , H01J37/28 , H01J2237/2814
摘要： An electron beam nanometer-level metrology tool includes an ambient temperature electron source and a movable stage for mounting a workpiece. The stage is adapted to position the workpiece's surface in a beam interrogation region. Electrostatic focus lenses convert electrons emitted by the electron source into a beam with a focal point that is positioned in the beam interrogation region. The lenses cause the electron beam to traverse a path that is generally orthogonal to the workpiece surface. Along the beam path are positioned upper and lower electrostatic deflection plates which are connected to an adjustable voltage source that applies ganged, opposite-sense d/c potentials thereto. Those potentials enable a scanning of the beam across the beam interrogation region while the beam remains substantially orthogonal to the workpiece surface, thereby enabling more accurate measurements of surface features. Within the metrology tool, all beam control surfaces are electrostatic so as to minimize power dissipation and temperature differentials.
摘要翻译：电子束纳米级计量工具包括环境温度电子源和用于安装工件的活动台。该台适于将工件的表面定位在光束询问区域中。静电聚焦透镜将由电子源发射的电子转换成具有位于光束询问区域中的焦点的光束。透镜使电子束穿过大体正交于工件表面的路径。沿着光束路径定位上和下静电偏转板，其连接到可调节的电压源，该可调电压源向其施加组合的，相反的d / c电位。这些电位使得能够在光束询问区域上扫描光束，同时光束保持基本上垂直于工件表面，从而使得能够更精确地测量表面特征。在计量工具中，所有光束控制表面都是静电的，以便最小化功耗和温差。

2. 发明授权

US06388516B1 Precision high speed magnetic coil driver circuit 失效
标题翻译：精密高速电磁线圈驱动电路
公开(公告)号：US06388516B1
公开(公告)日：2002-05-14
申请号：US09709093
申请日：2000-11-08
申请人： Samuel K. Doran , William A. Enichen
发明人： Samuel K. Doran , William A. Enichen
IPC分类号： H03F124
CPC分类号： H03F3/347 , H03F3/45475 , H03F3/45973 , H03F2200/372
摘要： Accuracy of correction of offset drift with temperature and noise are corrected in a high voltage, high current amplifier is improved by thermal isolation and/or temperature regulation of another amplifier having greater gain and connected to a different power supply in a closed loop feedback servo system. A clamping network connected to the higher gain amplifier to avoid hard saturation due to transient feedback signals from a reactive load, especially an inductive load, also prevents hard saturation of the high voltage, high current amplifier. An adjustable feedback circuit connected to the higher gain amplifier allows adjustment to obtain critical damping of a second order system and faster response to achieve proportionality of output current to input voltage with an accuracy of very few parts per million error and with minimum settling time.
摘要翻译：通过温度和噪声校正偏移漂移的精度在高电压下进行校正，通过具有较大增益的另一放大器的热隔离和/或温度调节来改善高电流放大器，并连接到闭环反馈伺服系统中的不同电源。连接到较高增益放大器的钳位网络，以避免由于来自无功负载，特别是感性负载的瞬态反馈信号引起的硬饱和，也可防止高电压，高电流放大器的硬饱和。连接到较高增益放大器的可调节反馈电路允许调整以获得二阶系统的临界阻尼和更快的响应，以实现输出电流与输入电压的成比例，具有极小的百万分之几的误差和最小的建立时间。

3. 发明授权

US6040095A Measurement marks for e-beam projection mask and method of using 失效
标题翻译：电子束投影掩模的测量标记和使用方法
公开(公告)号：US6040095A
公开(公告)日：2000-03-21
申请号：US163406
申请日：1998-09-30
申请人： William A. Enichen , Christophe F. Robinson
发明人： William A. Enichen , Christophe F. Robinson
IPC分类号： H01L21/027 , G03F1/00 , G03F1/20 , H01J37/304 , G03F9/00
CPC分类号： G03F1/20 , G03F1/44 , H01J37/3045 , H01J2237/30438 , H01J2237/3175
摘要： Measurement marks are applied throughout the area of an e-beam projection mask on a grillage of struts extending between sub-field membrane mask areas concurrently with patterning the sub-field membrane mask areas. The thickness of the struts prevents printing of the measurement marks on the resist at the target plane even if inadvertently illuminated by the e-beam system. Measurement of the relative locations of the measurement marks after fabrication and incremental periods of use supports the development of compensation or correction in the electron-optical system for distortions of the mask which may be detected from the measurement marks by adjustment of operating parameters thereof.
摘要翻译：测量标记在电子束投影掩模的整个区域上施加在在子场膜掩模区域之间延伸的支柱格架上，同时构图子场膜掩模区域。支柱的厚度防止在目标平面上的抗蚀剂上印刷测量标记，即使无意中被电子束系统照亮。在制造和增量使用周期之后，测量标记的相对位置的测量支持在电子 - 光学系统中开发用于通过调整其操作参数可以从测量标记检测的掩模的失真的补偿或校正。

4. 发明授权

US5570405A Registration and alignment technique for X-ray mask fabrication 失效
标题翻译： X射线掩模制造的注册和校准技术
公开(公告)号：US5570405A
公开(公告)日：1996-10-29
申请号：US466564
申请日：1995-06-06
申请人： Ken Tze-Kin Chan , William A. Enichen , John G. Hartley , Maris A. Sturans
发明人： Ken Tze-Kin Chan , William A. Enichen , John G. Hartley , Maris A. Sturans
IPC分类号： G03F1/16 , G03F7/20 , G03F9/00 , G21K1/06 , H01L21/027 , H01L21/302 , G21K5/00
CPC分类号： G03F7/70 , G03F9/70 , G21K1/06
摘要： An X-ray mask includes one or more X-ray transparent mask windows and at least one pattern-to-mask alignment mark etched into the mask substrate from the same side as the mask windows. The pattern-to-mask alignment marks can be etched at the same time as the mask windows and are detectable from the front surface of the mask substrate by an electron beam lithography system prior to creating the circuit pattern. The alignment marks are detected by the absence of backscattered electrons at the pattern-to-mask alignment marks.
摘要翻译： X射线掩模包括一个或多个X射线透明掩模窗口和从与掩模窗口相同的一侧蚀刻到掩模基板中的至少一个图案对掩模对准标记。可以在与掩模窗口同时蚀刻图案对掩模对准标记，并且可以在形成电路图案之前通过电子束光刻系统从掩模基板的前表面检测。通过在图案对掩模对准标记处不存在反向散射电子来检测对准标记。

5. 发明授权

US06931337B2 Lithography tool image quality evaluating and correcting 失效
标题翻译：平版印刷工具图像质量评估与校正
公开(公告)号：US06931337B2
公开(公告)日：2005-08-16
申请号：US10604051
申请日：2003-06-24
申请人： William A. Enichen , Christopher F. Robinson
发明人： William A. Enichen , Christopher F. Robinson
IPC分类号： G01K1/08 , G03F9/00 , G06F19/00 , G21K7/00 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30433
摘要： Electron beam lithography tool image quality evaluating and correcting including a test pattern with a repeated test pattern cell, an evaluation method and correction program product are disclosed. The test pattern cell includes a set of at least three elongated spaces with each elongated space having a different width than other elongated spaces in the set such that evaluation of a number of space widths in terms of tool image quality and calibration can be completed. The evaluation method implements the test pattern cell in a test pattern in at least thirteen sub-field test positions across an exposure field, which provides improved focus and astigmatism corrections for the lithography tool. The program product implements the use of corrections from the at least thirteen sub-field test positions to provide improved corrections for any selected sub-field position.
摘要翻译：公开了包括具有重复测试图案单元的测试图案，评估方法和校正程序产品的电子束光刻工具图像质量评估和校正。测试图案单元包括至少三个细长空间的集合，每个细长空间具有与该组中的其它细长空间不同的宽度，使得可以完成关于工具图像质量和校准的多个空间宽度的评估。评估方法在穿过曝光场的至少十三个子场测试位置中的测试图案中实现测试图案单元，其为光刻工具提供改进的聚焦和像散校正。程序产品实现使用来自至少十三个子场测试位置的校正，以为任何选择的子场位置提供改进的校正。

6. 发明授权

US5763894A Calibration patterns and techniques for charged particle projection lithography systems 失效
标题翻译：带电粒子投影光刻系统的校准模式和技术
公开(公告)号：US5763894A
公开(公告)日：1998-06-09
申请号：US788064
申请日：1997-01-23
申请人： William A. Enichen , Christopher Frederick Robinson
发明人： William A. Enichen , Christopher Frederick Robinson
IPC分类号： H01J37/147 , H01J37/304 , H01J37/305 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J2237/30433 , H01J2237/3175
摘要： A method and system for calibrating a projection electron beam. The electron beam is directed through a first mask pattern and onto a first calibration plate. The electron beam is directed through a second mask pattern and onto a second calibration plate. The first mask pattern and the first calibration plate are used to adjust the orientation of the electron beam, and the second mask pattern and the second calibration plate are used to adjust the magnification of the electron beam.
摘要翻译：一种用于校准投影电子束的方法和系统。电子束通过第一掩模图案被引导到第一校准板上。电子束通过第二掩模图案被引导到第二校准板上。第一掩模图案和第一校准板用于调整电子束的取向，并且第二掩模图案和第二校准板用于调整电子束的放大率。

7. 发明授权

US5621216A Hardware/software implementation for multipass E-beam mask writing 失效
标题翻译：用于多通道电子束掩模写入的硬件/软件实现
公开(公告)号：US5621216A
公开(公告)日：1997-04-15
申请号：US638410
申请日：1996-04-26
申请人： Eileen V. Clarke , William A. Enichen , John G. Hartley
发明人： Eileen V. Clarke , William A. Enichen , John G. Hartley
IPC分类号： H01J37/302 , H01J37/304
CPC分类号： G03F7/2063 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3026 , H01J37/3174
摘要： A process smooths the edges of rectangles written by an E-beam lithography system to improve critical dimension (CD) control in these shapes in the preparation of X-ray masks. The CD tolerances of X-ray masks are improved without the usual postprocessing costs normally associated with multipass solutions, thereby saving time and money when multipass writing is used in X-ray lithography. Two enhancements are provided to an X-ray mask maker that allow use of the same E-beam drive code for each exposure of a multipass write operation.
摘要翻译：一个过程平滑了电子束光刻系统写入的矩形的边缘，以便在制备X射线掩模时改善这些形状中的临界尺寸（CD）控制。改善了X射线掩模的CD容差，而无需通常与多通道解决方案相关联的后处理成本，从而在X射线光刻中使用多次写入时节省了时间和金钱。对X射线掩模制造商提供了两个增强功能，其允许对于多次写入操作的每次曝光使用相同的电子束驱动代码。

8. 发明授权

US07391023B2 Lithography tool image quality evaluating and correcting 有权
标题翻译：平版印刷工具图像质量评估与校正
公开(公告)号：US07391023B2
公开(公告)日：2008-06-24
申请号：US11151480
申请日：2005-06-13
申请人： William A. Enichen , Christopher F. Robinson
发明人： William A. Enichen , Christopher F. Robinson
IPC分类号： H01L21/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30433
摘要： Electron beam lithography tool image quality evaluating and correcting including a test pattern with a repeated test pattern cell, an evaluation method and correction program product are disclosed. The test pattern cell includes a set of at least three elongated spaces with each elongated space having a different width than other elongated spaces in the set such that evaluation of a number of space widths in terms of tool image quality and calibration can be completed. The evaluation method implements the test pattern cell in a test pattern in at least thirteen sub-field test positions across an exposure field, which provides improved focus and astigmatism corrections for the lithography tool. The program product implements the use of corrections from the at least thirteen sub-field test positions to provide improved corrections for any selected sub-field position.
摘要翻译：公开了包括具有重复测试图案单元的测试图案，评估方法和校正程序产品的电子束光刻工具图像质量评估和校正。测试图案单元包括至少三个细长空间的集合，每个细长空间具有与该组中的其它细长空间不同的宽度，使得可以完成关于工具图像质量和校准的多个空间宽度的评估。评估方法在穿过曝光场的至少十三个子场测试位置中的测试图案中实现测试图案单元，其为光刻工具提供改进的聚焦和像散校正。程序产品实现使用来自至少十三个子场测试位置的校正，以为任何选择的子场位置提供改进的校正。

9. 发明授权

US5552611A Pseudo-random registration masks for projection lithography tool 失效
标题翻译：用于投影光刻工具的伪随机对准掩模
公开(公告)号：US5552611A
公开(公告)日：1996-09-03
申请号：US466565
申请日：1995-06-06
申请人： William A. Enichen
发明人： William A. Enichen
IPC分类号： H01L21/027 , G03F1/20 , H01J37/304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3045 , H01J2237/30438 , H01J2237/31788
摘要： An exposure mask for a particle beam projection system used in the manufacture of semiconductors includes pseudo-random mask alignment marks positioned on the exposure mask that match up with corresponding pseudo-random substrate alignment marks. The substrate alignment marks are made up of three repetitions of the pseudo-random code in the mask alignment marks formed as features on the substrate. The alignment marks act together to produce a backscattered alignment signal with an arbitrarily large capture distance, a single peak on a uniform background that makes it easy to detect the aligned position, a high signal to noise ratio and no false peaks that might lead to misalignment.
摘要翻译：用于半导体制造中使用的粒子束投影系统的曝光掩模包括位于曝光掩模上的与对应的伪随机衬底对准标记匹配的伪随机掩模对准标记。衬底对准标记由形成为衬底上的特征的掩模对准标记中的三次重复的伪随机码组成。对准标记一起起作用以产生具有任意大的捕获距离的背向散射对准信号，均匀背景上的单个峰值，使得易于检测对准位置，高信噪比和没有可能导致未对准的假峰值。

10. 发明授权

US5301124A Registration of patterns formed of multiple fields 失效
标题翻译：注册由多个领域组成的图案
公开(公告)号：US5301124A
公开(公告)日：1994-04-05
申请号：US118984
申请日：1993-09-09
申请人： Ken T. Chan , Donald E. Davis , William A. Enichen , Cecil T. Ho , Edward V. Weber , Guenther Langner
发明人： Ken T. Chan , Donald E. Davis , William A. Enichen , Cecil T. Ho , Edward V. Weber , Guenther Langner
IPC分类号： G03F7/20 , H01J37/304 , H01L21/027 , G06F15/00 , A61N5/00 , G01J1/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/70475 , H01J37/3045 , H01J2237/30438 , H01J2237/31776
摘要： A pattern is aligned and exposed with a lithography system so that chips larger than the deflection field can be formed by exposing M.times.N fields in a mosaic pattern. The method corrects the deflection field to compensate for the orientation of a previous pattern on a substrate and compensates for errors due to height caused by the beam landing non perpendicular to the target. Two basic procedures disclosed are called "3-mark" which are only applicable to 2.times.2 arrays of fields, and "M.times.N" which covers the general situation, but with slightly less accuracy.
摘要翻译：图案用光刻系统对准和曝光，使得可以通过以马赛克图案曝光M * N场来形成大于偏转场的碎片。该方法校正偏转场以补偿衬底上先前图案的取向，并且补偿由垂直于靶的光束着陆造成的高度的误差。公开的两个基本程序被称为“3-mark”，仅适用于2 * 2场的阵列，“M * N”涵盖了一般情况，但精度稍差。

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