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1. 发明申请

US20050037193A1 Clean, dense yttrium oxide coating protecting semiconductor processing apparatus 有权
标题翻译：清洁，致密的氧化钇涂层保护半导体加工设备
公开(公告)号：US20050037193A1
公开(公告)日：2005-02-17
申请号：US10898113
申请日：2004-07-22
申请人： Jennifer Sun , Senh Thach , Jim Dempster , Li Xu
发明人： Jennifer Sun , Senh Thach , Jim Dempster , Li Xu
IPC分类号： C23C16/44 , C23C28/00 , B32B15/04
CPC分类号： C30B35/00 , C23C4/11 , C23C4/18 , C23C14/00 , C23C16/4404 , C23C28/042 , Y10S134/902 , Y10T428/26
摘要： Disclosed herein is a method for applying plasma-resistant coatings for use in semiconductor processing apparatus. The coatings are applied over a substrate which typically comprises an aluminum alloy of the 2000 series or the 5000 through 7000 series. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3. The coatings are typically applied to a surface of an aluminum alloy substrate or an anodized aluminum alloy substrate using a technique selected from the group consisting of thermal/flame spraying, plasma spraying, sputtering, and chemical vapor deposition (CVD). To provide the desired corrosion resistance, it is necessary to place the coating in compression. This is accomplished by controlling deposition conditions during application of the coating.
摘要翻译：本文公开了一种用于施加用于半导体处理装置的耐等离子体涂层的方法。将涂层施加在通常包括2000系列或5000至7000系列的铝合金的基底上。涂层通常包含Y，Sc，La，Ce，Eu，Dy等的氧化物或氟化物，或钇 - 铝 - 石榴石（YAG）。涂层可以进一步包含约20体积％或更少的Al 2 O 3。涂层通常使用选自热/火焰喷涂，等离子喷涂，溅射和化学气相沉积（CVD）的技术施加到铝合金基板或阳极氧化铝合金基板的表面上。为了提供所需的耐腐蚀性，必须将涂层置于压缩状态。这是通过在施加涂层期间控制沉积条件来实现的。

2. 发明授权

US08067067B2 Clean, dense yttrium oxide coating protecting semiconductor processing apparatus 有权
标题翻译：清洁，致密的氧化钇涂层保护半导体加工设备
公开(公告)号：US08067067B2
公开(公告)日：2011-11-29
申请号：US10898113
申请日：2004-07-22
申请人： Jennifer Y. Sun , Senh Thach , Jim Dempster , Li Xu
发明人： Jennifer Y. Sun , Senh Thach , Jim Dempster , Li Xu
IPC分类号： C23C16/00 , C23C4/00 , C23C4/10 , C23C4/06 , C23C4/04 , C23C4/08 , C23C16/08 , C23F1/00 , H01L21/306 , B05D1/08 , B05D1/02 , B05D1/32 , B05D1/36 , H05H1/26 , H05H1/52
CPC分类号： C30B35/00 , C23C4/11 , C23C4/18 , C23C14/00 , C23C16/4404 , C23C28/042 , Y10S134/902 , Y10T428/26
摘要： Disclosed herein is a method for applying plasma-resistant coatings for use in semiconductor processing apparatus. The coatings are applied over a substrate which typically comprises an aluminum alloy of the 2000 series or the 5000 through 7000 series. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3. The coatings are typically applied to a surface of an aluminum alloy substrate or an anodized aluminum alloy substrate using a technique selected from the group consisting of thermal/flame spraying, plasma spraying, sputtering, and chemical vapor deposition (CVD). To provide the desired corrosion resistance, it is necessary to place the coating in compression. This is accomplished by controlling deposition conditions during application of the coating.
摘要翻译：本文公开了一种用于施加用于半导体处理装置的耐等离子体涂层的方法。将涂层施加在通常包括2000系列或5000至7000系列的铝合金的基底上。涂层通常包含Y，Sc，La，Ce，Eu，Dy等的氧化物或氟化物，或钇 - 铝 - 石榴石（YAG）。涂层可以进一步包含约20体积％或更少的Al 2 O 3。涂层通常使用选自热/火焰喷涂，等离子喷涂，溅射和化学气相沉积（CVD）的技术施加到铝合金基板或阳极氧化铝合金基板的表面上。为了提供所需的耐腐蚀性，必须将涂层置于压缩状态。这是通过在施加涂层期间控制沉积条件来实现的。

3. 发明申请

US20080213496A1 Method of coating semiconductor processing apparatus with protective yttrium-containing coatings 审中-公开
标题翻译：用保护性钇涂层涂覆半导体处理装置的方法
公开(公告)号：US20080213496A1
公开(公告)日：2008-09-04
申请号：US11890221
申请日：2007-08-02
申请人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C23C4/10 , C23C14/34
CPC分类号： C23C28/042 , C23C4/11 , C23C4/18 , C23C16/4404
摘要： Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.
摘要翻译：将特种陶瓷材料应用于半导体加工设备的方法，其中特种陶瓷材料耐卤素等离子体。特种陶瓷材料含有至少一种含氧化钇的固溶体。已经修改了特种陶瓷材料的一些实施例以提供降低半导体处理室内的电弧的可能性的电阻率。

4. 发明申请

US20050056218A1 Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate 有权
标题翻译：由固体含氧化钇基底制成的气体分配板
公开(公告)号：US20050056218A1
公开(公告)日：2005-03-17
申请号：US10918232
申请日：2004-08-13
申请人： Jennifer Sun , Senh Thach , James Dempster , Li Xu , Thanh Pham
发明人： Jennifer Sun , Senh Thach , James Dempster , Li Xu , Thanh Pham
IPC分类号： C23C16/44 , C23C28/00 , C23C16/00
CPC分类号： C23C16/45565 , C04B41/009 , C04B41/5353 , C04B41/91 , C23C16/4404 , C23C16/4407 , C30B35/00 , H01J37/3244 , H01J37/32467 , H01J37/32862 , Y10T428/24273 , Y10T428/24314 , C04B35/505
摘要： Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate-typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.
摘要翻译：本文公开了一种用于处理室的气体分配组件中的气体分配板，其中气体分配板由可能还包括氧化铝的固体含氧化钇衬底制成。气体分配板包括通常为月牙形的多个通孔。通过超声波钻孔在固体含氧化钇基质中形成的通孔特别好。含固体氧化钇的基材通常包含至少99.9％的氧化钇，其密度为至少4.92g / cm 3，吸水率为约0.02％或更低，平均晶粒尺寸为约10毫米至约25毫米。本文还公开了用于制造和清洁含氧化钇气体分配板的方法。

5. 发明授权

US06949203B2 System level in-situ integrated dielectric etch process particularly useful for copper dual damascene 失效
标题翻译：系统级原位集成电介质蚀刻工艺特别适用于铜双镶嵌
公开(公告)号：US06949203B2
公开(公告)日：2005-09-27
申请号：US10379439
申请日：2003-03-03
申请人： Chang-Lin Hsieh , Diana Xiaobing Ma , Brian Sy Yuan Shieh , Gerald Zheyao Yin , Jennifer Sun , Senh Thach , Lee Luo , Claes H. Bjorkman
发明人： Chang-Lin Hsieh , Diana Xiaobing Ma , Brian Sy Yuan Shieh , Gerald Zheyao Yin , Jennifer Sun , Senh Thach , Lee Luo , Claes H. Bjorkman
IPC分类号： H01L21/00 , H01L21/311 , H01L21/768
CPC分类号： H01L21/76832 , H01J37/32458 , H01L21/31116 , H01L21/31138 , H01L21/67184 , H01L21/67207 , H01L21/67219 , H01L21/6723 , H01L21/76802 , H01L21/76804 , H01L21/76807
摘要： An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Ra and the second chamber includes an interior surface that has a roughness of less than about 32 Ra. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a barrier layer and a feature in the substrate to be contacted into the first chamber where the dielectric layer is etched in a process that encourages polymer formation over the roughened interior surface of the chamber. The substrate is then transferred from the first chamber to the second chamber under vacuum conditions and, in the second chamber, is exposed to a reactive plasma such as oxygen to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the barrier layer is etched through to the feature to be contacted in the second chamber of the multichamber substrate processing system using a process that discourages polymer formation over the relatively smooth interior surface of the second chamber. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps. In some embodiments the interior surface of the first chamber has a roughness between 100 and 200 Ra and in other embodiments the roughness of the first chamber's interior surface is between 110 and 160 Ra.
摘要翻译：在具有第一和第二蚀刻室的多室衬底处理系统中执行的集成原位蚀刻工艺。在一个实施例中，第一室包括已经被粗糙化至少100个的内表面，而第二室包括具有小于约32μm的粗糙度的内表面， / SUB>。该方法包括在向下的方向上转移其上形成有图案的光致抗蚀剂掩模，电介质层，阻挡层和衬底中的特征的衬底，以接触第一室，其中介电层被刻蚀在鼓励聚合物的过程中在室的粗糙内表面上形成。然后在真空条件下将衬底从第一室转移到第二室，并且在第二室中暴露于诸如氧的反应性等离子体以剥离沉积在衬底上的光致抗蚀剂掩模。在光致抗蚀剂掩模被剥离之后，通过阻止在第二室的相对光滑的内表面上聚合物形成的工艺，阻挡层被蚀刻到多室基板处理系统的第二室中以接触的特征。所有三个蚀刻步骤都是在系统级原位工艺中进行的，因此基板不会在台阶之间暴露于环境中。在一些实施例中，第一室的内表面具有在100和200之间的粗糙度，而在其它实施例中，第一室的内表面的粗糙度在110和160之间， SUB>。

6. 发明申请

US20090162647A1 Erosion resistant yttrium comprising metal with oxidized coating for plasma chamber components 有权
标题翻译：防腐蚀钇含有金属氧化涂层，用于等离子体室部件
公开(公告)号：US20090162647A1
公开(公告)日：2009-06-25
申请号：US12004907
申请日：2007-12-21
申请人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
发明人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
IPC分类号： B32B15/04 , B05D3/00
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32477
摘要： An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.
摘要翻译：描述了耐化学活性等离子体腐蚀或侵蚀的制品以及制造该制品的方法。该制品由金属或金属合金基材组成，其表面上具有金属或金属合金的氧化物的涂层。氧化物涂层的结构本质上是柱状的。构成氧化物的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金基底之间的界面处的晶粒尺寸大，并且其中氧化物涂层在氧化物之间的界面处被压缩涂层和金属或金属合金基材。通常，金属选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。

7. 发明申请

US20090056745A1 WET CLEAN PROCESS FOR RECOVERY OF ANODIZED CHAMBER PARTS 有权
标题翻译：用于回收阳极室部件的净化过程
公开(公告)号：US20090056745A1
公开(公告)日：2009-03-05
申请号：US11845620
申请日：2007-08-27
申请人： JENNIFER Y. SUN , Senh Thach , Xi Zhu , Li Xu , Anisul Khan
发明人： JENNIFER Y. SUN , Senh Thach , Xi Zhu , Li Xu , Anisul Khan
IPC分类号： C23G1/02
CPC分类号： C23C16/4407 , C11D7/08 , C11D7/10 , C11D11/0047 , C11D11/0064
摘要： A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed in water. The pores of the cleaned anodization may be resealed by a submerging the part in hot agitated deionized water.
摘要翻译：当在蚀刻反应器中暴露于含氟等离子体时，用于回收阳极氧化铝部件的清洁方法是特别有用的。将该部分浸渍在氟化物酸如氟化铵的搅拌溶液中，其将氟化铝转化为可溶性氟化物。该部件在水中冲洗。清洁的阳极氧化的孔可以通过将部件浸没在热的搅拌去离子水中来重新密封。

8. 发明申请

US20050016684A1 Process kit for erosion resistance enhancement 审中-公开
标题翻译：防腐蚀加工工艺套件
公开(公告)号：US20050016684A1
公开(公告)日：2005-01-27
申请号：US10627213
申请日：2003-07-25
申请人： Jennifer Sun , Ananda Kumar , Senh Thach
发明人： Jennifer Sun , Ananda Kumar , Senh Thach
IPC分类号： H01L21/3065 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32477 , H01J37/32642
摘要： A process kit is described that resists plasma erosion, preserves the spatial uniformity of plasma properties, reduces particle generation in the chamber, and significantly enhances the lifetime of the process kit. A layer of polymer material covers the top surface of the process kit. The polymer material is fluorocarbon-based and not reactive with the species in the plasma. The polymer material not only protects the process kit from progressive erosion, but also prevents the generation of particles in the chamber. The polymer material has similar permittivity to that of the process kit and therefore maintains the spatial uniformity of plasma properties, e.g., etch rate, near the wafer perimeter. The thickness of the layer is controlled between 0.5 and 1.5 mm such that the difference between its coefficient of thermal expansion and that of the process kit will not cause the layer to peel off the process kit's top surface.
摘要翻译：描述了一种防止等离子体侵蚀的过程套件，保持了等离子体性质的空间均匀性，减少了腔室中的颗粒产生，并显着提高了工艺套件的使用寿命。一层聚合物材料覆盖了工艺套件的顶面。聚合物材料是基于碳氟化合物的，并且不与等离子体中的物质反应。聚合物材料不仅可保护工艺套件免受逐渐侵蚀，还可防止腔室中产生颗粒。聚合物材料具有与处理试剂盒相似的介电常数，因此在晶片周边附近保持等离子体特性（例如蚀刻速率）的空间均匀性。将该层的厚度控制在0.5至1.5mm之间，使得其热膨胀系数与处理套件的热导率差不会导致该层从工艺套件的顶部表面剥离。

9. 发明申请

US20110198034A1 GAS DISTRIBUTION SHOWERHEAD WITH COATING MATERIAL FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：具有涂层材料的气体分布式淋浴器用于半导体加工
公开(公告)号：US20110198034A1
公开(公告)日：2011-08-18
申请号：US13011839
申请日：2011-01-21
申请人： Jennifer Sun , Senh Thach , Ren-Guan Duan , Thomas Graves
发明人： Jennifer Sun , Senh Thach , Ren-Guan Duan , Thomas Graves
IPC分类号： H01L21/00 , C23C4/12 , C23C16/455 , C23C16/50 , C23F1/08
CPC分类号： H01J37/3244 , C23C4/02 , C23C4/11 , C23C4/18
摘要： Described herein are exemplary methods and apparatuses for fabricating a gas distribution showerhead assembly in accordance with one embodiment. In one embodiment, a method includes providing a gas distribution plate having a first set of through-holes for delivering processing gases into a semiconductor processing chamber. The first set of through-holes is located on a backside of the plate (e.g., Aluminum substrate). The method includes spraying (e.g., plasma spraying) a coating material (e.g., Ytrria based material) onto a cleaned surface of the gas distribution plate. The method includes removing (e.g., surface grinding) a portion of the coating material from the surface to reduce a thickness of the coating material. The method includes forming (e.g., UV laser drilling, machining) a second set of through-holes in the coating material such that the through-holes are aligned with the first-set of through-holes.
摘要翻译：这里描述了根据一个实施例的用于制造气体分配喷头组件的示例性方法和装置。在一个实施例中，一种方法包括提供具有第一组通孔的气体分配板，用于将处理气体输送到半导体处理室中。第一组通孔位于板的背面（例如铝基板）上。该方法包括将涂层材料（例如，基于Ytrria的材料）喷雾（例如，等离子体喷涂）到气体分配板的清洁表面上。该方法包括从表面去除（例如，表面研磨）涂层材料的一部分以减小涂层材料的厚度。该方法包括在涂层材料中形成（例如UV激光钻孔，加工）第二组通孔，使得通孔与第一组通孔对齐。

10. 发明申请

US20100140222A1 FILLED POLYMER COMPOSITION FOR ETCH CHAMBER COMPONENT 审中-公开
标题翻译：用于蚀刻室组件的填充聚合物组合物
公开(公告)号：US20100140222A1
公开(公告)日：2010-06-10
申请号：US12632712
申请日：2009-12-07
申请人： Jennifer Y. Sun , Ren-Guan Duan , Senh Thach , Li Xu
发明人： Jennifer Y. Sun , Ren-Guan Duan , Senh Thach , Li Xu
IPC分类号： C08K3/10 , C08K3/16 , C08K3/28 , C08K3/08 , C08K3/34 , C08K3/22 , B32B7/12 , C23F1/02 , C23F1/08
CPC分类号： C09K3/10 , Y10T428/2857
摘要： A filled polymer composition having improved plasma resistance is disclosed. The composition includes a particle filler dispersed in a polymer matrix. The particle filler can be Nb2O5, YF3, AlN, SiC or Si3N4 and rare earth oxides. In an embodiment, the composition is utilized as a bonding adhesive for electrostatic chuck, bonding adhesive for shower head, bonding adhesive for liner, sealing material, O-ring, or plastic component.
摘要翻译：公开了具有改善的等离子体电阻的填充聚合物组合物。该组合物包括分散在聚合物基质中的颗粒填料。颗粒填料可以是Nb2O5，YF3，AlN，SiC或Si3N4和稀土氧化物。在一个实施方案中，组合物用作静电卡盘的粘合剂，用于喷头的粘合剂，衬垫的粘合剂，密封材料，O形环或塑料组分。

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