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1. 发明申请

US20080213496A1 Method of coating semiconductor processing apparatus with protective yttrium-containing coatings 审中-公开
标题翻译：用保护性钇涂层涂覆半导体处理装置的方法
公开(公告)号：US20080213496A1
公开(公告)日：2008-09-04
申请号：US11890221
申请日：2007-08-02
申请人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C23C4/10 , C23C14/34
CPC分类号： C23C28/042 , C23C4/11 , C23C4/18 , C23C16/4404
摘要： Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.
摘要翻译：将特种陶瓷材料应用于半导体加工设备的方法，其中特种陶瓷材料耐卤素等离子体。特种陶瓷材料含有至少一种含氧化钇的固溶体。已经修改了特种陶瓷材料的一些实施例以提供降低半导体处理室内的电弧的可能性的电阻率。

2. 发明申请

US20090214825A1 Ceramic coating comprising yttrium which is resistant to a reducing plasma 审中-公开
标题翻译：包含耐还原性等离子体的钇的陶瓷涂层
公开(公告)号：US20090214825A1
公开(公告)日：2009-08-27
申请号：US12072530
申请日：2008-02-26
申请人： Jennifer Y. Sun , Xiaoming He , Kenneth S. Collins , Thomas Graves , Senh Thach , Jie Yuan , Li Xu , Ren-Guan Duan
发明人： Jennifer Y. Sun , Xiaoming He , Kenneth S. Collins , Thomas Graves , Senh Thach , Jie Yuan , Li Xu , Ren-Guan Duan
IPC分类号： B32B7/00 , C23C4/00
CPC分类号： C23C4/11 , Y10T428/24355 , Y10T428/24997
摘要： Particulate generation has been a problem in semiconductor device processing in highly corrosive plasma environments. The problem is exacerbated when the plasma is a reducing plasma. Empirically produced data has shown that the formation of a plasma spray coated yttrium-comprising ceramic such as yttrium oxide, Y2O3—ZrO2 solid solution, YAG, and YF3 provides a low porosity coating with smooth and compacted surfaces when such ceramics are spray coated from a powder feed having an average effective diameter ranging from about 22 μm to about 0.1 μm. These spray-coated materials reduce the generation of particulates in corrosive reducing plasma environments.
摘要翻译：在高度腐蚀性等离子体环境中的半导体器件加工中，微粒产生是一个问题。当等离子体是还原等离子体时，问题更加严重。经验生产的数据显示，等离子体喷涂的包含钇的陶瓷如氧化钇，Y2O3-ZrO2固溶体，YAG和YF3的形成提供了具有光滑和压实表面的低孔隙率涂层，当这种陶瓷从粉末进料的平均有效直径为约22μm至约0.1μm。这些喷涂材料减少了腐蚀性还原等离子体环境中的颗粒物的产生。

3. 发明申请

US20090036292A1 Plasma-resistant ceramics with controlled electrical resistivity 有权
标题翻译：具有受控电阻率的等离子体陶瓷
公开(公告)号：US20090036292A1
公开(公告)日：2009-02-05
申请号：US11890156
申请日：2007-08-02
申请人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C04B35/00
CPC分类号： C04B35/505 , C04B35/486 , C04B35/495 , C04B35/50 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/404 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/81 , Y10T428/31
摘要： Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.
摘要翻译：在半导体加工条件下耐腐蚀/腐蚀等离子体腐蚀/腐蚀的特种陶瓷材料。腐蚀性等离子体可以是含卤素等离子体。特种陶瓷材料已经被修改以提供抑制等离子体电弧势的受控电阻率。

4. 发明授权

US08871312B2 Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber 有权
标题翻译：减少等离子体处理室中的半导体处理装置部件的表面上的等离子体电弧的方法
公开(公告)号：US08871312B2
公开(公告)日：2014-10-28
申请号：US13573354
申请日：2012-09-10
申请人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C04B35/505 , B32B18/00 , C04B35/50 , C04B35/486 , C04B35/495
CPC分类号： C04B35/505 , C04B35/486 , C04B35/495 , C04B35/50 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/404 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/81 , Y10T428/31
摘要： Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.
摘要翻译：在半导体加工条件下耐腐蚀/腐蚀等离子体腐蚀/腐蚀的特种陶瓷材料。腐蚀性等离子体可以是含卤素等离子体。特种陶瓷材料已经被修改以提供抑制等离子体电弧势的受控电阻率。

5. 发明授权

US08367227B2 Plasma-resistant ceramics with controlled electrical resistivity 有权
公开(公告)号：US08367227B2
公开(公告)日：2013-02-05
申请号：US11890156
申请日：2007-08-02
申请人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： B32B9/00 , B32B19/00 , B32B17/10 , B32B15/04 , C04B35/48 , C04B35/00 , C04B35/50 , C04B35/51
CPC分类号： C04B35/505 , C04B35/486 , C04B35/495 , C04B35/50 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/404 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/81 , Y10T428/31
摘要： Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

6. 发明申请

US20130022838A1 Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber 有权
标题翻译：减少等离子体处理室中的半导体处理装置部件的表面上的等离子体电弧的方法
公开(公告)号：US20130022838A1
公开(公告)日：2013-01-24
申请号：US13573354
申请日：2012-09-10
申请人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C04B35/505 , B32B18/00
CPC分类号： C04B35/505 , C04B35/486 , C04B35/495 , C04B35/50 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/404 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/81 , Y10T428/31
摘要： Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.
摘要翻译：在半导体加工条件下耐腐蚀/腐蚀等离子体腐蚀/腐蚀的特种陶瓷材料。腐蚀性等离子体可以是含卤素等离子体。特种陶瓷材料已经被修改以提供抑制等离子体电弧势的受控电阻率。

7. 发明申请

US20090162647A1 Erosion resistant yttrium comprising metal with oxidized coating for plasma chamber components 有权
标题翻译：防腐蚀钇含有金属氧化涂层，用于等离子体室部件
公开(公告)号：US20090162647A1
公开(公告)日：2009-06-25
申请号：US12004907
申请日：2007-12-21
申请人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
发明人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
IPC分类号： B32B15/04 , B05D3/00
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32477
摘要： An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.
摘要翻译：描述了耐化学活性等离子体腐蚀或侵蚀的制品以及制造该制品的方法。该制品由金属或金属合金基材组成，其表面上具有金属或金属合金的氧化物的涂层。氧化物涂层的结构本质上是柱状的。构成氧化物的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金基底之间的界面处的晶粒尺寸大，并且其中氧化物涂层在氧化物之间的界面处被压缩涂层和金属或金属合金基材。通常，金属选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。

8. 发明申请

US20120125488A1 Method of producing a plasma-resistant thermal oxide coating 有权
标题翻译：制造耐等离子体热氧化物涂层的方法
公开(公告)号：US20120125488A1
公开(公告)日：2012-05-24
申请号：US13374980
申请日：2012-01-25
申请人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
发明人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
IPC分类号： C23C8/10
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32477
摘要： A method of creating a plasma-resistant thermal oxide coating on a surface of an article, where the article is comprised of a metal or metal alloy which is typically selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof. The oxide coating is formed using a time-temperature profile which includes an initial rapid heating rage, followed by a gradual decrease in heating rate, to produce an oxide coating structure which is columnar in nature. The grain size of the crystals which make up the oxide coating is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate.
摘要翻译：一种在制品的表面上产生耐等离子体热氧化物涂层的方法，其中制品由金属或金属合金组成，金属或金属合金通常选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。使用时间 - 温度曲线形成氧化物涂层，其包括初始的快速加热，然后逐渐降低加热速率，以产生本质上为柱状的氧化物涂层结构。构成氧化物涂层的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金衬底之间的界面处大，并且氧化物涂层在氧化物之间的界面处被压缩涂层和金属或金属合金基材。

9. 发明授权

US08129029B2 Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating 有权
标题翻译：耐侵蚀等离子体室部件包括具有上覆热氧化涂层的金属基底结构
公开(公告)号：US08129029B2
公开(公告)日：2012-03-06
申请号：US12004907
申请日：2007-12-21
申请人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
发明人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
IPC分类号： B32B9/00
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32477
摘要： An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.
摘要翻译：描述了耐化学活性等离子体腐蚀或侵蚀的制品以及制造该制品的方法。该制品由金属或金属合金基材组成，其表面上具有金属或金属合金的氧化物的涂层。氧化物涂层的结构本质上是柱状的。构成氧化物的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金基底之间的界面处的晶粒尺寸大，并且其中氧化物涂层在氧化物之间的界面处被压缩涂层和金属或金属合金基材。通常，金属选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。

10. 发明授权

US08758858B2 Method of producing a plasma-resistant thermal oxide coating 有权
标题翻译：制造耐等离子体热氧化物涂层的方法
公开(公告)号：US08758858B2
公开(公告)日：2014-06-24
申请号：US13374980
申请日：2012-01-25
申请人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
发明人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
IPC分类号： B05D3/02
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32477
摘要： A method of creating a plasma-resistant thermal oxide coating on a surface of an article, where the article is comprised of a metal or metal alloy which is typically selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof. The oxide coating is formed using a time-temperature profile which includes an initial rapid heating rage, followed by a gradual decrease in heating rate, to produce an oxide coating structure which is columnar in nature. The grain size of the crystals which make up the oxide coating is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate.
摘要翻译：一种在制品的表面上产生耐等离子体热氧化物涂层的方法，其中制品由金属或金属合金组成，金属或金属合金通常选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。使用时间 - 温度曲线形成氧化物涂层，其包括初始的快速加热，然后逐渐降低加热速率，以产生本质上为柱状的氧化物涂层结构。构成氧化物涂层的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金衬底之间的界面处大，并且氧化物涂层在氧化物之间的界面处被压缩涂层和金属或金属合金基材。

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