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1. 发明申请

US20050238807A1 Refurbishment of a coated chamber component 审中-公开
标题翻译：翻新涂层室组件
公开(公告)号：US20050238807A1
公开(公告)日：2005-10-27
申请号：US10833975
申请日：2004-04-27
申请人： Yixing Lin , Dajiang Xu , Robert Haney , Clifford Stow
发明人： Yixing Lin , Dajiang Xu , Robert Haney , Clifford Stow
IPC分类号： H05H1/46 , B05D3/02 , B08B3/08 , B08B3/12 , B08B7/00 , B08B7/02 , C23C14/56 , H01J9/38 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32431 , B08B3/08 , B08B3/12 , B08B7/0035 , C23C14/564 , H01J9/38
摘要： A component of a process chamber is cleaned and refurbished. The component has a structure with an overlying coating having of a first layer. To refurbish the component, the first layer is removed to form an exposed surface on the structure. During or after the removal of the coating, the exposed surface is cleaned with a cleaning fluid, which deposits cleaning residue on the exposed surface. The exposed surface is heated in a substantially non-oxidizing atmosphere to a temperature that is sufficiently high to vaporize the cleaning residue from the surface, thereby forming a cleaned surface. A second layer is formed over the cleaned surface.
摘要翻译：处理室的组件被清洁和翻新。该组件具有具有第一层的覆盖涂层的结构。为了翻新部件，去除第一层以在结构上形成暴露的表面。在去除涂层期间或之后，暴露的表面用清洁液清洁，清洁液将清洁残留物沉积在暴露的表面上。将暴露的表面在基本上非氧化性气氛中加热到足够高的温度，以使表面上的清洁残余物蒸发，从而形成清洁的表面。在清洁的表面上形成第二层。

2. 发明授权

US08021743B2 Process chamber component with layered coating and method 有权
标题翻译：具有分层涂层和方法的工艺室组件
公开(公告)号：US08021743B2
公开(公告)日：2011-09-20
申请号：US12546588
申请日：2009-08-24
申请人： Yixing Lin , Daijiang Xu , Clifford Stow
发明人： Yixing Lin , Daijiang Xu , Clifford Stow
IPC分类号： B32B5/32 , B32B5/18 , B32B3/02 , C23C14/00
CPC分类号： C23C30/00 , C23C4/02 , C23C4/131 , C23C28/021 , C23C28/44 , Y10T428/12736 , Y10T428/12743 , Y10T428/1275 , Y10T428/12757 , Y10T428/12764 , Y10T428/24355 , Y10T428/24942 , Y10T428/24992 , Y10T428/249981 , Y10T428/249987 , Y10T428/31504
摘要： A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying structure and first and second coating layers, the first coating layer comprising a first material having a first thermal expansion coefficient and a first surface having an average surface roughness of less than about 25 micrometers. The second coating layer is over the first surface of the first coating layer, the second coating layer comprising a second material having a second thermal expansion coefficient that differs by less than 5% from the first thermal expansion coefficient of the first material and a second surface having an average surface roughness of at least about 50 micrometers.
摘要翻译：基板处理室部件能够暴露于处理室中的通电气体。该组件具有下面的结构和第一和第二涂层，第一涂层包括具有第一热膨胀系数的第一材料和具有小于约25微米的平均表面粗糙度的第一表面。第二涂层在第一涂层的第一表面之上，第二涂层包括具有第二热膨胀系数的第二材料，第二热膨胀系数与第一材料的第一热膨胀系数相差小于5％，第二表面具有至少约50微米的平均表面粗糙度。

3. 发明授权

US06565984B1 Clean aluminum alloy for semiconductor processing equipment 有权
标题翻译：用于半导体加工设备的清洁铝合金
公开(公告)号：US06565984B1
公开(公告)日：2003-05-20
申请号：US10161192
申请日：2002-05-28
申请人： Shun Wu , Clifford Stow , Hong Wang , Yixing Lin
发明人： Shun Wu , Clifford Stow , Hong Wang , Yixing Lin
IPC分类号： B32B1504
CPC分类号： H01J37/32467 , C23C16/4401 , C25D11/04 , H01J37/32477 , H01J37/32559 , Y10T428/1259 , Y10T428/12611 , Y10T428/249961 , Y10T428/249987 , Y10T428/25 , Y10T428/256 , Y10T428/258 , Y10T428/26 , Y10T428/263
摘要： We have discovered that the formation of particulate inclusions at the surface and the interior of an aluminum alloy article interferes with the performance of the article when a surface of the article is protected by an anodized coating. We have also discovered that the formation of such particulate inclusions can be controlled to a large extent by controlling the concentration of particular impurities present in the alloy used to fabricate the aluminum alloy article.
摘要翻译：我们已经发现，当铝合金制品的表面和内部形成颗粒状夹杂物时，通过阳极氧化涂层保护制品的表面时会干扰制品的性能。我们还发现，通过控制用于制造铝合金制品的合金中存在的特定杂质的浓度，可以在很大程度上控制这种颗粒夹杂物的形成。

4. 发明授权

US07910218B2 Cleaning and refurbishing chamber components having metal coatings 有权
标题翻译：具有金属涂层的清洁和翻新室部件
公开(公告)号：US07910218B2
公开(公告)日：2011-03-22
申请号：US10691418
申请日：2003-10-22
申请人： Yixing Lin , Dajiang Xu , Clifford Stow
发明人： Yixing Lin , Dajiang Xu , Clifford Stow
IPC分类号： B32B9/00
CPC分类号： C23C14/564 , Y10T428/31678
摘要： A component of a process chamber is refurbished and cleaned to remove an intermetallic compound from the component. The component has a structure having a coating that includes a first metal layer over the intermetallic compound. To refurbish the component, the first metal layer is removed to form an exposed surface that at least partially includes the intermetallic compound. The exposed surface is bead blasted in a penetrative bead blasting step by propelling blasting beads having a bead diameter of less than about 180 micrometers with a gas that is pressurized to a pressure of less than about 310 kPa (45 psi), towards the exposed surface, thereby removing the intermetallic compound from the exposed surface of the structure to form a cleaned surface. A second metal layer is then formed over the cleaned surface.
摘要翻译：处理室的组件被翻新和清洁以从组件去除金属间化合物。该组件具有包括金属间化合物上的第一金属层的涂层的结构。为了翻新部件，去除第一金属层以形成至少部分地包括金属间化合物的暴露表面。暴露的表面通过将具有小于约180微米的珠直径的喷射珠推进至小于约310kPa（45psi）的压力的气体朝向暴露表面从而从结构的暴露表面除去金属间化合物以形成清洁表面。然后在清洁的表面上形成第二金属层。

5. 发明申请

US20100086805A1 PROCESS CHAMBER COMPONENT WITH LAYERED COATING AND METHOD 有权
标题翻译：具有层状涂层和方法的工艺室组件
公开(公告)号：US20100086805A1
公开(公告)日：2010-04-08
申请号：US12546588
申请日：2009-08-24
申请人： Yixing Lin , Dajiang Xu , Clifford Stow
发明人： Yixing Lin , Dajiang Xu , Clifford Stow
IPC分类号： B32B15/04 , B05D1/36 , B05D3/12 , B05D1/08 , B32B15/20 , B32B15/18 , B32B18/00
CPC分类号： C23C30/00 , C23C4/02 , C23C4/131 , C23C28/021 , C23C28/44 , Y10T428/12736 , Y10T428/12743 , Y10T428/1275 , Y10T428/12757 , Y10T428/12764 , Y10T428/24355 , Y10T428/24942 , Y10T428/24992 , Y10T428/249981 , Y10T428/249987 , Y10T428/31504
摘要： A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying structure and first and second coating layers, the first coating layer comprising a first material having a first thermal expansion coefficient and a first surface having an average surface roughness of less than about 25 micrometers. The second coating layer is over the first surface of the first coating layer, the second coating layer comprising a second material having a second thermal expansion coefficient that differs by less than 5% from the first thermal expansion coefficient of the first material and a second surface having an average surface roughness of at least about 50 micrometers.
摘要翻译：基板处理室部件能够暴露于处理室中的通电气体。该组件具有下面的结构和第一和第二涂层，第一涂层包括具有第一热膨胀系数的第一材料和具有小于约25微米的平均表面粗糙度的第一表面。第二涂层在第一涂层的第一表面之上，第二涂层包括具有第二热膨胀系数的第二材料，该第二热膨胀系数与第一材料的第一热膨胀系数相差小于5％，第二表面具有至少约50微米的平均表面粗糙度。

6. 发明申请

US20060110620A1 Process chamber component with layered coating and method 失效
公开(公告)号：US20060110620A1
公开(公告)日：2006-05-25
申请号：US10996883
申请日：2004-11-24
申请人： Yixing Lin , Dajiang Xu , Clifford Stow
发明人： Yixing Lin , Dajiang Xu , Clifford Stow
IPC分类号： B32B15/01 , C23C14/00 , B05D7/00
CPC分类号： C23C30/00 , C23C4/02 , C23C4/131 , C23C28/021 , C23C28/44 , Y10T428/12736 , Y10T428/12743 , Y10T428/1275 , Y10T428/12757 , Y10T428/12764 , Y10T428/24355 , Y10T428/24942 , Y10T428/24992 , Y10T428/249981 , Y10T428/249987 , Y10T428/31504
摘要： A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying structure and first and second coating layers. The first coating layer is formed over the underlying structure, and has a first surface with an average surface roughness of less than about 25 micrometers. The second coating layer is formed over the first coating layer, and has a second surface with an average surface roughness of at least about 50 micrometers. Process residues can adhere to the surface of the second coating layer to reduce the contamination of processed substrates.

7. 发明授权

US06713188B2 Clean aluminum alloy for semiconductor processing equipment 有权
标题翻译：用于半导体加工设备的清洁铝合金
公开(公告)号：US06713188B2
公开(公告)日：2004-03-30
申请号：US10352631
申请日：2003-01-27
申请人： Shun Wu , Clifford C. Stow , Hong Wang , Yixing Lin , Brian West
发明人： Shun Wu , Clifford C. Stow , Hong Wang , Yixing Lin , Brian West
IPC分类号： B32B1504
CPC分类号： H01J37/32467 , C23C16/4401 , C25D11/04 , H01J37/32477 , H01J37/32559 , Y10T428/1259 , Y10T428/12611 , Y10T428/249961 , Y10T428/249987 , Y10T428/25 , Y10T428/256 , Y10T428/258 , Y10T428/26 , Y10T428/263
摘要： We have discovered that the formation of particulate inclusions at the surface and the interior of an aluminum alloy article interferes with the performance of the article when a surface of the article is protected by an anodized coating. We have also discovered that the formation of such particulate inclusions can be controlled to a large extent by controlling the concentration of particular impurities present in the alloy used to fabricate the aluminum alloy article.
摘要翻译：我们已经发现，当铝合金制品的表面和内部形成颗粒状夹杂物时，通过阳极氧化涂层保护制品的表面时会干扰制品的性能。我们还发现，通过控制用于制造铝合金制品的合金中存在的特定杂质的浓度，可以在很大程度上控制这种颗粒夹杂物的形成。

8. 发明申请

US20080213496A1 Method of coating semiconductor processing apparatus with protective yttrium-containing coatings 审中-公开
标题翻译：用保护性钇涂层涂覆半导体处理装置的方法
公开(公告)号：US20080213496A1
公开(公告)日：2008-09-04
申请号：US11890221
申请日：2007-08-02
申请人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C23C4/10 , C23C14/34
CPC分类号： C23C28/042 , C23C4/11 , C23C4/18 , C23C16/4404
摘要： Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.
摘要翻译：将特种陶瓷材料应用于半导体加工设备的方法，其中特种陶瓷材料耐卤素等离子体。特种陶瓷材料含有至少一种含氧化钇的固溶体。已经修改了特种陶瓷材料的一些实施例以提供降低半导体处理室内的电弧的可能性的电阻率。

9. 发明授权

US07055732B2 Semiconductor processing apparatus including plasma-resistant, welded aluminum structures 失效
标题翻译：半导体处理装置包括耐等离子体，焊接铝结构
公开(公告)号：US07055732B2
公开(公告)日：2006-06-06
申请号：US10652663
申请日：2003-08-28
申请人： Senh Thach , Jennifer Y. Sun , Shun Jackson Wu , Yixing Lin , Clifford C. Stow
发明人： Senh Thach , Jennifer Y. Sun , Shun Jackson Wu , Yixing Lin , Clifford C. Stow
IPC分类号： B23K20/12 , B23K37/00 , B23K31/02
CPC分类号： B23K20/24 , B23K20/12 , B23K20/129 , B23K20/2336 , B23K2101/40 , B23K2103/10 , Y10T428/12736
摘要： We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.
摘要翻译：我们已经发现了一种生产复合形状的铝合金制品的方法，其中已经使用焊接来形成制品，其中在包括焊接接头的制品的表面上产生阳极氧化的铝涂层，并且其中阳极氧化的铝涂层与现有技术中已知的用于暴露于腐蚀性等离子体环境的焊接制品相比提供了更好的性能。

10. 发明授权

US07048814B2 Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus 有权
公开(公告)号：US07048814B2
公开(公告)日：2006-05-23
申请号：US10071869
申请日：2002-02-08
申请人： Yixing Lin , Brian T. West , Hong Wang , Shun Jackson Wu , Jennifer Y Sun , Clifford C. Stow , Senh Thach
发明人： Yixing Lin , Brian T. West , Hong Wang , Shun Jackson Wu , Jennifer Y Sun , Clifford C. Stow , Senh Thach
IPC分类号： C25D3/04
CPC分类号： C25D11/16 , C25D11/04 , C25D11/045
摘要： We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities within a specific range and controlling the particulate size and distribution of the mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

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