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    • 3. 发明申请
    • Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
    • 清洁,致密的氧化钇涂层保护半导体加工设备
    • US20050037193A1
    • 2005-02-17
    • US10898113
    • 2004-07-22
    • Jennifer SunSenh ThachJim DempsterLi Xu
    • Jennifer SunSenh ThachJim DempsterLi Xu
    • C23C16/44C23C28/00B32B15/04
    • C30B35/00C23C4/11C23C4/18C23C14/00C23C16/4404C23C28/042Y10S134/902Y10T428/26
    • Disclosed herein is a method for applying plasma-resistant coatings for use in semiconductor processing apparatus. The coatings are applied over a substrate which typically comprises an aluminum alloy of the 2000 series or the 5000 through 7000 series. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3. The coatings are typically applied to a surface of an aluminum alloy substrate or an anodized aluminum alloy substrate using a technique selected from the group consisting of thermal/flame spraying, plasma spraying, sputtering, and chemical vapor deposition (CVD). To provide the desired corrosion resistance, it is necessary to place the coating in compression. This is accomplished by controlling deposition conditions during application of the coating.
    • 本文公开了一种用于施加用于半导体处理装置的耐等离子体涂层的方法。 将涂层施加在通常包括2000系列或5000至7000系列的铝合金的基底上。 涂层通常包含Y,Sc,La,Ce,Eu,Dy等的氧化物或氟化物,或钇 - 铝 - 石榴石(YAG)。 涂层可以进一步包含约20体积%或更少的Al 2 O 3。 涂层通常使用选自热/火焰喷涂,等离子喷涂,溅射和化学气相沉积(CVD)的技术施加到铝合金基板或阳极氧化铝合金基板的表面上。 为了提供所需的耐腐蚀性,必须将涂层置于压缩状态。 这是通过在施加涂层期间控制沉积条件来实现的。