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1. 发明申请

US20110210311A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20110210311A1
公开(公告)日：2011-09-01
申请号：US13035063
申请日：2011-02-25
申请人： Je Won KIM , Tae Sung Jang , Jong Gun Woo , Jong HO Lee
发明人： Je Won KIM , Tae Sung Jang , Jong Gun Woo , Jong HO Lee
IPC分类号： H01L33/06
CPC分类号： H01L33/08 , H01L27/156 , H01L33/50 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.

2. 发明申请

US20110210351A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有多细胞阵列的半导体发光器件及其制造方法
公开(公告)号：US20110210351A1
公开(公告)日：2011-09-01
申请号：US13034136
申请日：2011-02-24
申请人： Je Won KIM , Tae Sung JANG , Jong Gun WOO , Jong Ho LEE
发明人： Je Won KIM , Tae Sung JANG , Jong Gun WOO , Jong Ho LEE
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , H01L27/156 , H01L33/50 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.
摘要翻译：一种半导体发光器件，包括：衬底; 布置在基板上的多个发光单元，每个发光单元包括第一导电型半导体层，第二导电型半导体层和设置在其间的有源层，以发射蓝色光; 互连结构，将所述发光单元的所述第一导电型半导体层和所述第二导电型半导体层中的至少一个电连接到所述第一导电型半导体层和所述第二导电型半导体层中的至少一个，型半导体层; 以及形成在由所述多个发光单元限定的发光区域的至少一部分中的光转换部分，所述光转换部分包括具有红光转换材料的红光转换部分和绿光转换部分中的至少一个具有绿光转换材料的部分。

3. 发明申请

US20120043557A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有改进的光提取效率的半导体发光器件
公开(公告)号：US20120043557A1
公开(公告)日：2012-02-23
申请号：US13286881
申请日：2011-11-01
申请人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
发明人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
IPC分类号： H01L33/02 , H01L33/22
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

4. 发明申请

US20110037086A1 NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20110037086A1
公开(公告)日：2011-02-17
申请号：US12911320
申请日：2010-10-25
申请人： Je Won KIM , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
发明人： Je Won KIM , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
IPC分类号： H01L33/30
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1 Ga 1（1-x1-y1）N（其中0＆nlE; x1＆nlE; 1,0＆amp; nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE ; 1），由n型覆盖层上形成的未掺杂的InAGa1-AN（其中0

5. 发明申请

US20130020599A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20130020599A1
公开(公告)日：2013-01-24
申请号：US13554508
申请日：2012-07-20
申请人： Jae Ho HAN , Je Won KIM , Hae Soo HA
发明人： Jae Ho HAN , Je Won KIM , Hae Soo HA
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44
摘要： A semiconductor light emitting device is provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A first electrode is electrically connected to the first conductivity-type semiconductor layer. A light-transmissive conductive layer is disposed on the second conductivity-type semiconductor layer. A second electrode includes a reflective metal layer and an insulating layer.
摘要翻译：提供半导体发光器件。半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。第一电极与第一导电型半导体层电连接。透光导电层设置在第二导电型半导体层上。第二电极包括反射金属层和绝缘层。

6. 发明申请

US20120261687A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20120261687A1
公开(公告)日：2012-10-18
申请号：US13441562
申请日：2012-04-06
申请人： Hyun Wook SHIM , Suk Ho YOON , Tan SAKONG , Je Won KIM , Ki Sung KIM
发明人： Hyun Wook SHIM , Suk Ho YOON , Tan SAKONG , Je Won KIM , Ki Sung KIM
IPC分类号： H01L33/32
CPC分类号： H01L33/04 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度活动层

7. 发明申请

US20110121259A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20110121259A1
公开(公告)日：2011-05-26
申请号：US12902233
申请日：2010-10-12
申请人： Sang Heon HAN , Joo Young CHEON , Je Won KIM , Dong Ju LEE , Dong Chul SHIN , Hyun Wook SHIM , Jae Woong HAN
发明人： Sang Heon HAN , Joo Young CHEON , Je Won KIM , Dong Ju LEE , Dong Chul SHIN , Hyun Wook SHIM , Jae Woong HAN
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.
摘要翻译：提供一种氮化物半导体发光器件，其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。

8. 发明申请

US20100065877A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有改进的光提取效率的半导体发光器件
公开(公告)号：US20100065877A1
公开(公告)日：2010-03-18
申请号：US12624106
申请日：2009-11-23
申请人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
发明人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

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