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    • 2. 发明申请
    • SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME
    • 具有多细胞阵列的半导体发光器件及其制造方法
    • US20110210351A1
    • 2011-09-01
    • US13034136
    • 2011-02-24
    • Je Won KIMTae Sung JANGJong Gun WOOJong Ho LEE
    • Je Won KIMTae Sung JANGJong Gun WOOJong Ho LEE
    • H01L33/08
    • H01L33/08H01L27/156H01L33/50H01L33/62H01L2924/0002H01L2924/00
    • A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.
    • 一种半导体发光器件,包括:衬底; 布置在基板上的多个发光单元,每个发光单元包括第一导电型半导体层,第二导电型半导体层和设置在其间的有源层,以发射蓝色光; 互连结构,将所述发光单元的所述第一导电型半导体层和所述第二导电型半导体层中的至少一个电连接到所述第一导电型半导体层和所述第二导电型半导体层中的至少一个, 型半导体层; 以及形成在由所述多个发光单元限定的发光区域的至少一部分中的光转换部分,所述光转换部分包括具有红光转换材料的红光转换部分和绿光转换部分中的至少一个 具有绿光转换材料的部分。
    • 6. 发明申请
    • NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    • 氮化物半导体发光器件
    • US20120261687A1
    • 2012-10-18
    • US13441562
    • 2012-04-06
    • Hyun Wook SHIMSuk Ho YOONTan SAKONGJe Won KIMKi Sung KIM
    • Hyun Wook SHIMSuk Ho YOONTan SAKONGJe Won KIMKi Sung KIM
    • H01L33/32
    • H01L33/04H01L33/32
    • There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.
    • 提供了一种氮化物半导体发光器件,包括:n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。 电子注入层具有多层结构,其中堆叠具有不同能带隙的三层或更多层,多层结构重复堆叠至少两次。 三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙,并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度 活动层