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1. 发明申请

US20120261687A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20120261687A1
公开(公告)日：2012-10-18
申请号：US13441562
申请日：2012-04-06
申请人： Hyun Wook SHIM , Suk Ho YOON , Tan SAKONG , Je Won KIM , Ki Sung KIM
发明人： Hyun Wook SHIM , Suk Ho YOON , Tan SAKONG , Je Won KIM , Ki Sung KIM
IPC分类号： H01L33/32
CPC分类号： H01L33/04 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度活动层

2. 发明申请

US20120322188A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20120322188A1
公开(公告)日：2012-12-20
申请号：US13523571
申请日：2012-06-14
申请人： Jong Sun MAENG , Ki Ho PARK , Bum Joon KIM , Hyun Seok RYU , Jung Hyun LEE , Boung Kyun KIM , Ki Sung KIM , Suk Ho YOON
发明人： Jong Sun MAENG , Ki Ho PARK , Bum Joon KIM , Hyun Seok RYU , Jung Hyun LEE , Boung Kyun KIM , Ki Sung KIM , Suk Ho YOON
IPC分类号： H01L33/32
CPC分类号： H01L33/007 , H01L21/67109 , H01L21/68764 , H01L21/68771 , H01L33/0079
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

3. 发明申请

US20120001152A1 SEMICONDUCTOR LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体发光二极管及其制造方法
公开(公告)号：US20120001152A1
公开(公告)日：2012-01-05
申请号：US13162254
申请日：2011-06-16
申请人： Ki Sung KIM , Gi Bum KIM , Tae Hun KIM , Young Chul SHIN , Young Sun KIM
发明人： Ki Sung KIM , Gi Bum KIM , Tae Hun KIM , Young Chul SHIN , Young Sun KIM
IPC分类号： H01L33/06 , H01L33/22
CPC分类号： H01L33/22 , H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/20 , H01L2933/0025 , H01L2933/0091
摘要： A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion.
摘要翻译：公开了一种半导体发光二极管（LED）及其制造方法。制造半导体发光二极管（LED）的方法包括：在具有突起和凹陷的基板上形成包括第一导电半导体层，有源层和第二导电半导体层的发光结构; 从所述发光结构去除所述衬底以暴露对应于所述突起和凹陷的第一凹凸部分; 在第一凹凸部上形成保护层; 去除所述保护层的一部分以暴露所述第一凹凸部的凸部; 以及在所述第一凹凸部的所述凸部上形成第二凹凸部。半导体发光二极管（LED）包括：包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 形成在所述发光结构上的第一凹凸部，在其凸部具有第二凹凸部; 以及填充所述第一凹凸部的凹部的保护层。

4. 发明申请

US20130014694A1 METHOD OF GROWING SEMICONDUCTOR EPITAXIAL THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME 审中-公开
标题翻译：生长半导体外延薄膜的方法和使用其制造半导体发光器件的方法
公开(公告)号：US20130014694A1
公开(公告)日：2013-01-17
申请号：US13547710
申请日：2012-07-12
申请人： Jong Sun MAENG , Bum Joon KIM , Hyun Seok RYU , Jung Hyun LEE , Ki Sung KIM
发明人： Jong Sun MAENG , Bum Joon KIM , Hyun Seok RYU , Jung Hyun LEE , Ki Sung KIM
IPC分类号： C30B25/14 , C30B25/10 , C30B25/02
CPC分类号： H01L21/0262 , C30B25/14 , C30B29/406 , H01L21/0254
摘要： A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers.
摘要翻译：提供一种生长半导体外延薄膜的方法和使用其制造半导体发光器件的方法。生长半导体外延薄膜的方法包括：将装载在晶片保持器中的多个晶片布置在反应室中; 并且通过设置成在晶片被加载的方向上延伸的气体供给单元将包括氯有机金属化合物的反应气体喷射到晶片，以在每个晶片的表面上生长半导体外延薄膜。

5. 发明申请

US20120025246A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120025246A1
公开(公告)日：2012-02-02
申请号：US13167396
申请日：2011-06-23
申请人： Tae Hun KIM , Gi Bum KIM , Won Goo HUR , Young Sun KIM , Ki Sung KIM
发明人： Tae Hun KIM , Gi Bum KIM , Won Goo HUR , Young Sun KIM , Ki Sung KIM
IPC分类号： H01L33/58 , B82Y40/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L2933/0091
摘要： Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.
摘要翻译：公开了一种半导体发光器件及其制造方法。该方法包括提供具有彼此相对的第一和第二主表面的衬底，并且在第一主表面中形成第一不平坦结构，在衬底的第一主表面上形成牺牲层，在牺牲层上形成具有开放区域的掩模以便暴露牺牲层的上表面的一部分，通过通过开放区域蚀刻牺牲层和衬底，在衬底中形成第二不均匀结构，从衬底去除牺牲层和掩模，并形成发光堆叠在基板的第一和第二不平坦结构上。

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