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1. 发明授权

US08168454B2 Vertical light emitting diode and method of manufacturing the same 有权
标题翻译：垂直发光二极管及其制造方法
公开(公告)号：US08168454B2
公开(公告)日：2012-05-01
申请号：US12466086
申请日：2009-05-14
申请人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
摘要翻译：提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

2. 发明申请

US20110053298A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20110053298A1
公开(公告)日：2011-03-03
申请号：US12909297
申请日：2010-10-21
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/22 , H01L33/48
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

3. 发明申请

US20090311817A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US20090311817A1
公开(公告)日：2009-12-17
申请号：US12544868
申请日：2009-08-20
申请人： Sang Ho YOON , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho YOON , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

4. 发明申请

US20090026478A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20090026478A1
公开(公告)日：2009-01-29
申请号：US12177517
申请日：2008-07-22
申请人： Sang Ho YOON , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho YOON , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/145 , H01L33/405
摘要： There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.
摘要翻译：提供了具有优异的光提取效率的半导体发光器件，以通过增加反射层的总反射率来有效地反射移入器件的光。根据本发明的一个方面的半导体发光器件包括：依次堆叠的衬底，反射电极，第一导电半导体层，有源层和第二导电类型半导体层。这里，反射电极包括：第一反射层，设置在所述基板上，并且包括反射从所述有源层产生的光的导电反射材料; 以及设置在所述第一反射层上的第二反射层，包括反射从所述有源层产生的光的一个或多个介电部分和填充有导电填料的一个或多个接触孔，以将所述第一导电类型半导体层和所述第一反射层并且具有比所产生的光的波长更大的厚度。

5. 发明授权

US08178378B2 Method of manufacturing vertical nitride semiconductor light emitting diode 有权
标题翻译：立式氮化物半导体发光二极管的制造方法
公开(公告)号：US08178378B2
公开(公告)日：2012-05-15
申请号：US12909204
申请日：2010-10-21
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

6. 发明申请

US20110210351A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有多细胞阵列的半导体发光器件及其制造方法
公开(公告)号：US20110210351A1
公开(公告)日：2011-09-01
申请号：US13034136
申请日：2011-02-24
申请人： Je Won KIM , Tae Sung JANG , Jong Gun WOO , Jong Ho LEE
发明人： Je Won KIM , Tae Sung JANG , Jong Gun WOO , Jong Ho LEE
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , H01L27/156 , H01L33/50 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.
摘要翻译：一种半导体发光器件，包括：衬底; 布置在基板上的多个发光单元，每个发光单元包括第一导电型半导体层，第二导电型半导体层和设置在其间的有源层，以发射蓝色光; 互连结构，将所述发光单元的所述第一导电型半导体层和所述第二导电型半导体层中的至少一个电连接到所述第一导电型半导体层和所述第二导电型半导体层中的至少一个，型半导体层; 以及形成在由所述多个发光单元限定的发光区域的至少一部分中的光转换部分，所述光转换部分包括具有红光转换材料的红光转换部分和绿光转换部分中的至少一个具有绿光转换材料的部分。

7. 发明申请

US20110033965A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US20110033965A1
公开(公告)日：2011-02-10
申请号：US12909204
申请日：2010-10-21
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/44
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

8. 发明授权

US07838317B2 Vertical nitride semiconductor light emitting diode and method of manufacturing the same 失效
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US07838317B2
公开(公告)日：2010-11-23
申请号：US12544868
申请日：2009-08-20
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

9. 发明申请

US20080048206A1 VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：立式氮化镓系发光二极管及其制造方法
公开(公告)号：US20080048206A1
公开(公告)日：2008-02-28
申请号：US11742818
申请日：2007-05-01
申请人： Su Yeol LEE , Bang Won OH , Doo Go BAIK , Tae Sung JANG , Jong Gun WOO , Seok Beom CHOI , Sang Ho YOON , Dong Woo KIM , In Tae YEO
发明人： Su Yeol LEE , Bang Won OH , Doo Go BAIK , Tae Sung JANG , Jong Gun WOO , Seok Beom CHOI , Sang Ho YOON , Dong Woo KIM , In Tae YEO
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.
摘要翻译：制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

10. 发明申请

US20140197374A1 METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED THEREBY 审中-公开
标题翻译：用于制造氮化物半导体发光器件和制造的氮化物半导体发光器件的方法
公开(公告)号：US20140197374A1
公开(公告)日：2014-07-17
申请号：US14239231
申请日：2011-08-17
申请人： Seok Min Hwang , Jin Bock Lee , Tae Sung Jang , Jong Gun Woo
发明人： Seok Min Hwang , Jin Bock Lee , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/40
CPC分类号： H01L33/405 , H01L33/44 , H01L2933/0016
摘要： There is provided a method of manufacturing a nitride semiconductor light emitting device, the method including: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first conductivity-type nitride semiconductor layer, an active layer and a second conductivity-type nitride semiconductor layer sequentially stacked on a substrate; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法，所述方法包括：在衬底上形成发光结构，所述发光结构包括介于其间的有源层的第一和第二导电型氮化物半导体层; 形成依次堆叠在基板上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层; 形成与第一导电型氮化物半导体层连接的第一电极; 在所述第二导电型氮化物半导体层上形成光致抗蚀剂膜以暴露所述第二导电型氮化物半导体层的一部分; 并且在由光致抗蚀剂膜暴露的第二导电型氮化物半导体层的部分上连续形成反射金属层和阻挡金属层作为第二电极，并除去光致抗蚀剂膜。

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