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1. 发明申请

US20140198528A1 WAVELENGTH CONVERSION CHIP FOR A LIGHT EMITTING DIODE, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：用于发光二极管的波长转换芯片及其制造方法
公开(公告)号：US20140198528A1
公开(公告)日：2014-07-17
申请号：US14239100
申请日：2011-08-17
申请人： Yong Tae KIim , Tomio Inoue , Je Won Kim , Tsuyoshi Tsutsui , Jong Ho Lee , Seung Wan Chae
发明人： Yong Tae KIim , Tomio Inoue , Je Won Kim , Tsuyoshi Tsutsui , Jong Ho Lee , Seung Wan Chae
IPC分类号： H01L33/50 , F21V8/00
CPC分类号： G02B6/0073 , H01L33/486 , H01L33/505 , H01L2924/0002 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2924/00
摘要： There is provided a method of manufacturing a wavelength converted LED chip, including attaching a plurality of LED chips to a chip alignment region of an upper surface of a temporary support plate, forming a conductive bump on the electrode of the respective LED chips, forming a phosphor-containing resin encapsulation part in the chip alignment region to cover the conductive bump, polishing the phosphor containing resin encapsulation part, forming the wavelength converted LED chips by cutting the provided phosphor containing resin encapsulation part between the LED chips, the wavelength converted LED chip including a wavelength conversion layer obtained from the phosphor containing resin encapsulation part and formed on lateral surfaces and an upper surface of the wavelength converted LED chip, and removing the temporary support plate from the wavelength converted LED chip.
摘要翻译：提供一种制造波长转换LED芯片的方法，包括将多个LED芯片附接到临时支撑板的上表面的芯片对准区域，在各个LED芯片的电极上形成导电凸块，形成含磷光体的树脂封装部分在芯片取向区域中覆盖导电凸块，抛光含荧光体的树脂封装部分，通过在LED芯片之间切割提供的含磷树脂封装部分，形成波长转换的LED芯片，波长转换的LED芯片包括由含荧光体的树脂封装部分形成的波长转换层，并形成在波长转换的LED芯片的侧面和上表面上，并从波长转换的LED芯片上去除临时支撑板。

2. 发明申请

US20140183589A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURED THEREBY 审中-公开
标题翻译：制造半导体发光元件和制造半导体发光元件的方法
公开(公告)号：US20140183589A1
公开(公告)日：2014-07-03
申请号：US14237515
申请日：2011-08-09
申请人： Jae Ho Han , Sung Tae Kim , Seung Wan Chae , Jong Ho Lee , Je Won Kim
发明人： Jae Ho Han , Sung Tae Kim , Seung Wan Chae , Jong Ho Lee , Je Won Kim
IPC分类号： H01L33/00 , H01L33/60
CPC分类号： H01L33/005 , B23K26/364 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L33/0095 , H01L33/46 , H01L33/60
摘要： There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate.
摘要翻译：提供一种制造半导体发光器件和由此制造的半导体发光器件的方法。根据示例性实施例，制造半导体发光器件的方法包括：通过在衬底的第一主表面上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构所述基板具有彼此相对的第一和第二主表面; 在所述基板的所述第二主表面上形成反射膜，所述反射膜包括至少一个激光吸收区域; 以及通过从对应于所述激光吸收区域的所述发光结构的顶部的一部分照射激光而将所述发光结构和所述衬底分离成器件单元的划线处理到所述发光结构和所述衬底。

3. 发明授权

US08415708B2 Nitride based semiconductor light-emitting device 有权
标题翻译：氮化物基半导体发光器件
公开(公告)号：US08415708B2
公开(公告)日：2013-04-09
申请号：US12911320
申请日：2010-10-25
申请人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
发明人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1 Ga 1（1-x1-y1）N（其中0＆nlE; x1＆nlE; 1,0＆amp; nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE ; 1），由n型覆盖层上形成的未掺杂的InAGa1-AN（其中0

4. 发明申请

US20110210311A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20110210311A1
公开(公告)日：2011-09-01
申请号：US13035063
申请日：2011-02-25
申请人： Je Won KIM , Tae Sung Jang , Jong Gun Woo , Jong HO Lee
发明人： Je Won KIM , Tae Sung Jang , Jong Gun Woo , Jong HO Lee
IPC分类号： H01L33/06
CPC分类号： H01L33/08 , H01L27/156 , H01L33/50 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.

5. 发明申请

US20100019223A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20100019223A1
公开(公告)日：2010-01-28
申请号：US12338496
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.
摘要翻译：提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。

6. 发明申请

US20090032800A1 PHOTONIC CRYSTAL LIGHT EMITTING DEVICE 失效
标题翻译：光电晶体发光器件
公开(公告)号：US20090032800A1
公开(公告)日：2009-02-05
申请号：US12182509
申请日：2008-07-30
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Dong Joon Kim , Yong Chun Kim , Je Won Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Dong Joon Kim , Yong Chun Kim , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/44 , H01L2933/0083
摘要： There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.
摘要翻译：提供了一种光子晶体发光器件，包括：衬底; 形成在所述基板上彼此间隔开的多个纳米棒状发光结构，所述纳米棒状发光结构包括第一导电型半导体层，有源层和第二导电型半导体层; 以及分别与第一和第二导电类型半导体层电连接的第一和第二电极，其中纳米棒发光结构以预定的尺寸和周期排列，以形成从有源层发射的光的光子带隙，由此纳米棒发光结构限定了光子晶体结构。在光子晶体发光器件中，纳米棒发光结构被布置成限定光子晶体以增强光提取效率。

7. 发明授权

US07462876B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07462876B2
公开(公告)日：2008-12-09
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译：本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

8. 发明申请

US20070148923A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20070148923A1
公开(公告)日：2007-06-28
申请号：US11681998
申请日：2007-03-05
申请人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
发明人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , Y10S438/962 , Y10S438/964
摘要： The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
摘要翻译：本发明提供一种氮化物半导体器件。氮化物半导体器件包括形成在氮化物晶体生长衬底上的n型氮化物半导体层。在n型氮化物半导体层上形成有源层。在有源层上形成第一p型氮化物半导体层。在第一p型氮化物半导体层上形成微结构化的电流扩散图案。电流扩散图案由绝缘材料制成。在其上形成有电流扩散图案的第一p型氮化物半导体层上形成第二p型氮化物半导体层。

9. 发明申请

US20070145406A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070145406A1
公开(公告)日：2007-06-28
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译：本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

10. 发明授权

US07187007B2 Nitride semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07187007B2
公开(公告)日：2007-03-06
申请号：US11052103
申请日：2005-02-08
申请人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
发明人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , Y10S438/962 , Y10S438/964
摘要： The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
摘要翻译：本发明提供一种氮化物半导体器件。氮化物半导体器件包括形成在氮化物晶体生长衬底上的n型氮化物半导体层。在n型氮化物半导体层上形成有源层。在有源层上形成第一p型氮化物半导体层。在第一p型氮化物半导体层上形成微结构化的电流扩散图案。电流扩散图案由绝缘材料制成。在其上形成有电流扩散图案的第一p型氮化物半导体层上形成第二p型氮化物半导体层。

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