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1. 发明授权

US6043206A Solutions for cleaning integrated circuit substrates 有权
标题翻译：集成电路基板清洗方案
公开(公告)号：US6043206A
公开(公告)日：2000-03-28
申请号：US211673
申请日：1998-12-14
申请人： Jae-inh Song , Moon-hee Lee , Heung-soo Park , Young-bum Koh
发明人： Jae-inh Song , Moon-hee Lee , Heung-soo Park , Young-bum Koh
IPC分类号： C11D3/02 , C11D11/00 , H01L21/306 , C11D3/06 , B08B3/08 , C23G1/02
CPC分类号： C11D11/0047 , C11D3/042 , H01L21/02063
摘要： Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboric acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboric acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.
摘要翻译：用于从集成电路基板去除污染物的清洁溶液包括氟硼酸和磷酸。从集成电路基板去除污染物的方法包括使基板与包含氟硼酸和磷酸的清洁溶液接触。然后将集成电路基板与水溶液接触。

2. 发明授权

US6092539A In-situ cleaning apparatuses for wafers used in integrated circuit devices and methods of cleaning using the same 失效
标题翻译：用于集成电路器件的晶片的原位清洁装置及使用其的清洁方法
公开(公告)号：US6092539A
公开(公告)日：2000-07-25
申请号：US44279
申请日：1998-03-19
申请人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
发明人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
IPC分类号： H01L21/304 , B08B3/04 , B08B7/00 , H01L21/00 , B08B3/10
CPC分类号： H01L21/67028 , B08B3/04 , B08B7/00 , Y10S134/902
摘要： Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.
摘要翻译：用于清洁集成电路装置中使用的晶片的装置包括：（1）包括惰性气体储存浴，氟化氢气体储存浴和含有选自水蒸气，醇蒸汽，及其混合物和气体混合器，其中惰性气体储存浴，氟化氢气体储存浴和蒸气储存浴与气体混合器连通; （2）一种湿清洗部，包括用于储存氟化物的第一浴; 用于储存液体酒精的第二浴; 以及与所述第一浴和第二浴连通的清洗溶液储存浴，其中所述氟化物和所述液态醇形成储存在所述清洗溶液储存浴中的清洗溶液; 和（3）定位在干洗部分和湿清洗部分之间并与干洗部分和湿清洁部分连通的公共清洁浴池。

3. 发明授权

US06277204B1 Methods for cleaning wafers used in integrated circuit devices 有权
标题翻译：用于清洁集成电路器件中使用的晶片的方法
公开(公告)号：US06277204B1
公开(公告)日：2001-08-21
申请号：US09593344
申请日：2000-06-14
申请人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
发明人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
IPC分类号： B08B302
CPC分类号： H01L21/67028 , B08B3/04 , B08B7/00 , Y10S134/902
摘要： Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.
摘要翻译：用于清洁集成电路装置中使用的晶片的装置包括：（1）包括惰性气体储存浴，氟化氢气体储存浴和含有选自水蒸气，醇蒸汽，及其混合物和气体混合器，其中惰性气体储存浴，氟化氢气体储存浴和蒸气储存浴与气体混合器连通; （2）一种湿清洗部，包括用于储存氟化物的第一浴; 用于储存液体酒精的第二浴; 以及与所述第一浴和第二浴连通的清洗溶液储存浴，其中所述氟化物和所述液态醇形成储存在所述清洗溶液储存浴中的清洗溶液; 和（3）定位在干洗部分和湿清洗部分之间并与干洗部分和湿清洁部分连通的公共清洁浴池。

4. 发明授权

US5789360A Cleaning solution for use on a semiconductor wafer following chemical-mechanical polishing of the wafer and method for using same 失效
标题翻译：在晶片的化学机械抛光之后在半导体晶片上使用的清洁溶液及其使用方法
公开(公告)号：US5789360A
公开(公告)日：1998-08-04
申请号：US778135
申请日：1997-01-02
申请人： Jae-inh Song , Young-jun Cho , Heung-soo Park , Young-bum Koh
发明人： Jae-inh Song , Young-jun Cho , Heung-soo Park , Young-bum Koh
IPC分类号： H01L21/304 , B24B55/00 , C11D3/02 , C11D3/04 , C11D3/06 , C11D11/00 , H01L21/02 , H01L21/321 , H01L21/768 , B08B3/08 , C23G1/02
CPC分类号： H01L21/02074 , C11D11/0047 , C11D3/042
摘要： A solution and method for cleaning a silicon wafer following a chemical-mechanical polishing process is disclosed. The cleaning solution being 0.1% to 99% by total solution volume of phosphoric acid, 0.1% to 25% by total solution volume of fluoroboric acid, and the balance of the solution, deionized water.
摘要翻译：公开了一种在化学机械抛光工艺之后清洗硅晶片的方法和方法。清洗液的总溶液体积为0.1〜99％，氟硼酸的总溶液体积为0.1〜25％，其余为去离子水。

5. 发明授权

US06570253B1 Multi-layer film for a thin film structure and a capacitor using the same 有权
标题翻译：用于薄膜结构的多层膜和使用其的电容器
公开(公告)号：US06570253B1
公开(公告)日：2003-05-27
申请号：US09686623
申请日：2000-10-12
申请人： Jae-soon Lim , Yeong-kwan Kim , Heung-soo Park , Sang-in Lee
发明人： Jae-soon Lim , Yeong-kwan Kim , Heung-soo Park , Sang-in Lee
IPC分类号： H01G904
CPC分类号： H01L28/40 , H01L21/3142 , H01L21/31604 , H01L21/31616
摘要： A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.
摘要翻译：用于薄膜结构的多层膜，使用该多层膜的电容器以及制造多层膜和电容器的方法，所述多层膜包括在下层材料层和上层之间的组成过渡层分别由相互作用参数彼此不同的不同元素形成的材料层，组成过渡层包含下部和上部材料层的两个元素，组成过渡层的浓度从组成过渡层的部分逐渐变化，下部材料层到组合物过渡层的与上部材料层接触的部分，使得上部材料层的元素的浓度在与上部材料层相邻的部分中相对较大，每个下部和上部材料层由铝，硅，锆，铈的氧化物或氮化物材料形成钛，钛，钇，钽或铌。

6. 发明授权

US06555394B2 Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure 失效
公开(公告)号：US06555394B2
公开(公告)日：2003-04-29
申请号：US09867109
申请日：2001-05-29
申请人： Ki-yeon Park , Heung-soo Park , Young-wook Park
发明人： Ki-yeon Park , Heung-soo Park , Young-wook Park
IPC分类号： H01L2100
CPC分类号： H01L21/02356 , C23C16/405 , C23C16/46 , C23C16/56 , H01L21/02183 , H01L21/02337 , H01L21/02348 , H01L21/31604 , H01L21/31691
摘要： Methods of forming Ta2O5 layers in a process chamber are disclosed. A Ta2O5 layer can be maintained at a first temperature that is less than a temperature for crystallization of the Ta2O5 layer. At least one of a position of the Ta2O5 layer in the process chamber relative to the heater and a pressure in the process chamber is changed to increase the temperature of the Ta2O5 layer to about the temperature for crystallization.

7. 发明授权

US06635582B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06635582B2
公开(公告)日：2003-10-21
申请号：US09270229
申请日：1999-03-15
申请人： Cheol-ju Yun , Young-min Kwon , Heung-soo Park
发明人： Cheol-ju Yun , Young-min Kwon , Heung-soo Park
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , G03F7/422 , H01L21/76838
摘要： A pre-stripping treatment solution for treatment of metal surfaces before stripping photoresist which has been used for patterning a metal layer. Also provided is a method of removing the photoresist, and a method of manufacturing semiconductor devices using the above solution and method. In one aspect of the invention, the photoresist is first ashed. The ashed resultant structure is then treated, prior to stripping of the photoresist, with a pre-stripping treatment solution of an organic acid solution having a carboxyl group is mixed with deionized water at a volume ratio of 1:0 to 1:100.
摘要翻译：用于在剥离已经用于图案化金属层的光致抗蚀剂之前处理金属表面的预剥离处理溶液。还提供了去除光致抗蚀剂的方法，以及使用上述溶液和方法制造半导体器件的方法。在本发明的一个方面，首先将光致抗蚀剂灰化。然后在剥离光致抗蚀剂之前，将具有羧基的有机酸溶液的预剥离处理溶液以1：0至1：100的体积比与去离子水混合，然后处理灰化的所得结构。

8. 发明授权

US5672230A Central management system of wet chemical stations 失效
标题翻译：湿化工站中央管理体系
公开(公告)号：US5672230A
公开(公告)日：1997-09-30
申请号：US522958
申请日：1995-09-01
申请人： Heung-soo Park , Hee-sun Chae
发明人： Heung-soo Park , Hee-sun Chae
IPC分类号： B01J4/02 , G05B15/02 , G05B23/02 , H01L21/00 , H01L21/02 , H01L21/304 , H01L21/306 , B44C1/00
CPC分类号： H01L21/67276 , H01L21/67017
摘要： A central management system for wet chemical cleaning stations includes a number of wet chemical cleaning stations each having a liquid bath, filter, pump and multiple sensors for sensing the process variables thereof; and a main computer connected to the wet chemical cleaning stations to display, store and process data sensed by the sensors and totally manage the data, to thereby enable effective central management of the cleaning process via the main computer.
摘要翻译：湿化学清洗站的中央管理系统包括多个湿化学清洗站，每个湿化学清洗站具有液体浴，过滤器，泵和用于感测其过程变量的多个传感器; 连接到湿式化学清洗站的主计算机，显示，存储和处理由传感器感测的数据，并对数据进行全面的管理，从而能够通过主计算机对清洗过程进行有效的集中管理。

9. 发明授权

US07052918B2 Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof 有权
公开(公告)号：US07052918B2
公开(公告)日：2006-05-30
申请号：US10410341
申请日：2003-04-10
申请人： Jae-soon Lim , Yeong-kwan Kim , Heung-soo Park , Sang-in Lee
发明人： Jae-soon Lim , Yeong-kwan Kim , Heung-soo Park , Sang-in Lee
IPC分类号： H01L21/8242
CPC分类号： H01L28/40 , H01L21/3142 , H01L21/31604 , H01L21/31616
摘要： A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.

10. 发明授权

US06720275B2 Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure 有权
标题翻译：在包括将Ta 2 O 5层改变为加热器分离或室压力的室中制造包括Ta 2 O 5层的电容器的方法
公开(公告)号：US06720275B2
公开(公告)日：2004-04-13
申请号：US10387091
申请日：2003-03-12
申请人： Ki-yeon Park , Heung-soo Park , Young-wook Park
发明人： Ki-yeon Park , Heung-soo Park , Young-wook Park
IPC分类号： H01L21469
CPC分类号： H01L21/02356 , C23C16/405 , C23C16/46 , C23C16/56 , H01L21/02183 , H01L21/02337 , H01L21/02348 , H01L21/31604 , H01L21/31691
摘要： Methods of forming Ta2O5 layers in a process chamber are disclosed. A Ta2O5 layer can be maintained at a first temperature that is less than a temperature for crystallization of the Ta2O5 layer. At least one of a position of the Ta2O5 layer in the process chamber relative to the heater and a pressure in the process chamber is changed to increase the temperature of the Ta2O5 layer to about the temperature for crystallization.
摘要翻译：公开了在处理室中形成Ta 2 O 5层的方法。可以将Ta 2 O 5层保持在小于Ta 2 O 5层的结晶温度的第一温度。改变处理室中的Ta 2 O 5层相对于加热器的位置和处理室中的压力中的至少一个，以使Ta 2 O 5层的温度升高至约结晶温度。

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