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1. 发明授权

US6043206A Solutions for cleaning integrated circuit substrates 有权
标题翻译：集成电路基板清洗方案
公开(公告)号：US6043206A
公开(公告)日：2000-03-28
申请号：US211673
申请日：1998-12-14
申请人： Jae-inh Song , Moon-hee Lee , Heung-soo Park , Young-bum Koh
发明人： Jae-inh Song , Moon-hee Lee , Heung-soo Park , Young-bum Koh
IPC分类号： C11D3/02 , C11D11/00 , H01L21/306 , C11D3/06 , B08B3/08 , C23G1/02
CPC分类号： C11D11/0047 , C11D3/042 , H01L21/02063
摘要： Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboric acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboric acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.
摘要翻译：用于从集成电路基板去除污染物的清洁溶液包括氟硼酸和磷酸。从集成电路基板去除污染物的方法包括使基板与包含氟硼酸和磷酸的清洁溶液接触。然后将集成电路基板与水溶液接触。

2. 发明授权

US6092539A In-situ cleaning apparatuses for wafers used in integrated circuit devices and methods of cleaning using the same 失效
标题翻译：用于集成电路器件的晶片的原位清洁装置及使用其的清洁方法
公开(公告)号：US6092539A
公开(公告)日：2000-07-25
申请号：US44279
申请日：1998-03-19
申请人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
发明人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
IPC分类号： H01L21/304 , B08B3/04 , B08B7/00 , H01L21/00 , B08B3/10
CPC分类号： H01L21/67028 , B08B3/04 , B08B7/00 , Y10S134/902
摘要： Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.
摘要翻译：用于清洁集成电路装置中使用的晶片的装置包括：（1）包括惰性气体储存浴，氟化氢气体储存浴和含有选自水蒸气，醇蒸汽，及其混合物和气体混合器，其中惰性气体储存浴，氟化氢气体储存浴和蒸气储存浴与气体混合器连通; （2）一种湿清洗部，包括用于储存氟化物的第一浴; 用于储存液体酒精的第二浴; 以及与所述第一浴和第二浴连通的清洗溶液储存浴，其中所述氟化物和所述液态醇形成储存在所述清洗溶液储存浴中的清洗溶液; 和（3）定位在干洗部分和湿清洗部分之间并与干洗部分和湿清洁部分连通的公共清洁浴池。

3. 发明授权

US06277204B1 Methods for cleaning wafers used in integrated circuit devices 有权
标题翻译：用于清洁集成电路器件中使用的晶片的方法
公开(公告)号：US06277204B1
公开(公告)日：2001-08-21
申请号：US09593344
申请日：2000-06-14
申请人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
发明人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
IPC分类号： B08B302
CPC分类号： H01L21/67028 , B08B3/04 , B08B7/00 , Y10S134/902
摘要： Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.
摘要翻译：用于清洁集成电路装置中使用的晶片的装置包括：（1）包括惰性气体储存浴，氟化氢气体储存浴和含有选自水蒸气，醇蒸汽，及其混合物和气体混合器，其中惰性气体储存浴，氟化氢气体储存浴和蒸气储存浴与气体混合器连通; （2）一种湿清洗部，包括用于储存氟化物的第一浴; 用于储存液体酒精的第二浴; 以及与所述第一浴和第二浴连通的清洗溶液储存浴，其中所述氟化物和所述液态醇形成储存在所述清洗溶液储存浴中的清洗溶液; 和（3）定位在干洗部分和湿清洗部分之间并与干洗部分和湿清洁部分连通的公共清洁浴池。

4. 发明授权

US5789360A Cleaning solution for use on a semiconductor wafer following chemical-mechanical polishing of the wafer and method for using same 失效
标题翻译：在晶片的化学机械抛光之后在半导体晶片上使用的清洁溶液及其使用方法
公开(公告)号：US5789360A
公开(公告)日：1998-08-04
申请号：US778135
申请日：1997-01-02
申请人： Jae-inh Song , Young-jun Cho , Heung-soo Park , Young-bum Koh
发明人： Jae-inh Song , Young-jun Cho , Heung-soo Park , Young-bum Koh
IPC分类号： H01L21/304 , B24B55/00 , C11D3/02 , C11D3/04 , C11D3/06 , C11D11/00 , H01L21/02 , H01L21/321 , H01L21/768 , B08B3/08 , C23G1/02
CPC分类号： H01L21/02074 , C11D11/0047 , C11D3/042
摘要： A solution and method for cleaning a silicon wafer following a chemical-mechanical polishing process is disclosed. The cleaning solution being 0.1% to 99% by total solution volume of phosphoric acid, 0.1% to 25% by total solution volume of fluoroboric acid, and the balance of the solution, deionized water.
摘要翻译：公开了一种在化学机械抛光工艺之后清洗硅晶片的方法和方法。清洗液的总溶液体积为0.1〜99％，氟硼酸的总溶液体积为0.1〜25％，其余为去离子水。

5. 发明授权

US06228739B1 Pre-treatment method performed on a semiconductor structure before forming hemi-spherical grains of capacitor storage node 失效
标题翻译：在形成电容器存储节点的半球形晶粒之前，在半导体结构上执行预处理方法
公开(公告)号：US06228739B1
公开(公告)日：2001-05-08
申请号：US09306917
申请日：1999-05-07
申请人： Heon-jae Ha , Hong-seong Son , Young-ki Hong , Jae-inh Song , Chun-yong Park
发明人： Heon-jae Ha , Hong-seong Son , Young-ki Hong , Jae-inh Song , Chun-yong Park
IPC分类号： H01L2120
CPC分类号： H01L28/84 , H01L21/02052 , H01L21/31111 , H01L21/31133 , H01L21/32137
摘要： A pre-treatment method for improving the growth of hemi-spherical grains (HSGs) on a semiconductor structure by removing etching residue before forming a capacitor storage node having the HSGs. The pre-treatment method includes dry-etching a material layer formed on a surface of a semiconductor substrate to form a storage node pattern on the semiconductor substrate. Multiple ashing sequences are then performed on the semiconductor structure using an etching gas, followed by a stripping step using H2SO4 to remove any residue remaining on the semiconductor structure after the multiple ashing sequences. The semiconductor structure is then cleaned with an ammonium peroxide mixture (APM), and HSGs are thereafter grown on capacitor storage nodes of the storage node pattern.
摘要翻译：一种用于通过在形成具有HSG的电容器存储节点之前去除蚀刻残留来改善半球结构上的半球形晶粒（HSG）的生长的预处理方法。预处理方法包括对形成在半导体衬底的表面上的材料层进行干蚀刻以在半导体衬底上形成存储节点图案。然后使用蚀刻气体在半导体结构上执行多个灰化序列，随后使用H 2 SO 4进行汽提步骤以除去在多个灰化序列之后残留在半导体结构上的残留物。然后用过氧化铵混合物（APM）清洁半导体结构，然后在存储节点图案的电容器存储节点上生长HSG。

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