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    • 3. 发明授权
    • Methods for cleaning wafers used in integrated circuit devices
    • 用于清洁集成电路器件中使用的晶片的方法
    • US06277204B1
    • 2001-08-21
    • US09593344
    • 2000-06-14
    • Kyu-hwan ChangJae-inh SongHeung-soo ParkYoung-bum Koh
    • Kyu-hwan ChangJae-inh SongHeung-soo ParkYoung-bum Koh
    • B08B302
    • H01L21/67028B08B3/04B08B7/00Y10S134/902
    • Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.
    • 用于清洁集成电路装置中使用的晶片的装置包括:(1)包括惰性气体储存浴,氟化氢气体储存浴和含有选自水蒸气,醇蒸汽 ,及其混合物和气体混合器,其中惰性气体储存浴,氟化氢气体储存浴和蒸气储存浴与气体混合器连通; (2)一种湿清洗部,包括用于储存氟化物的第一浴; 用于储存液体酒精的第二浴; 以及与所述第一浴和第二浴连通的清洗溶液储存浴,其中所述氟化物和所述液态醇形成储存在所述清洗溶液储存浴中的清洗溶液; 和(3)定位在干洗部分和湿清洗部分之间并与干洗部分和湿清洁部分连通的公共清洁浴池。