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1. 发明授权

US4843030A Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes 失效
标题翻译：通过光解，热解和催化过程的组合进行半导体加工
公开(公告)号：US4843030A
公开(公告)日：1989-06-27
申请号：US126891
申请日：1987-11-30
申请人： J. Gary Eden , Kevin K. King , Viken Tavitian
发明人： J. Gary Eden , Kevin K. King , Viken Tavitian
IPC分类号： C23C16/02 , C23C16/48 , C30B25/10 , H01L21/205
CPC分类号： H01L21/0242 , C23C16/0272 , C23C16/483 , C30B25/105 , C30B29/08 , H01L21/02395 , H01L21/02532 , H01L21/0262 , Y10S117/904 , Y10S148/048 , Y10S148/058 , Y10S148/071 , Y10S148/093 , Y10S438/903
摘要： A semiconductor processing method is provided for growing a semiconductor film from a semiconductorbearing gas on a substrate at a substrate temperature below the pyrolytic threshold of the gas. The gas is photodissociated to a collisionally stable species which migrates and travels in the gas phase the entire distance to the substrate, surving hundreds of collisions, and is pyrolyzed at the surface of the substrate and forms several monolayers of semiconductor material which is substantially more catalytically active than the substrate and which subsequently catalyzes decomposition of the gas.
摘要翻译：提供一种半导体处理方法，用于在低于气体的热解阈值的衬底温度下从半导体衬底上的半导体衬底生长半导体膜。气体被光分解成碰撞稳定的物质，其在气相中迁移并移动到基底的整个距离，传播数百次碰撞，并在基底表面热解并形成几个基本上更具催化性的单层半导体材料比底物活性高，随后催化气体分解。

2. 发明授权

US08968668B2 Arrays of metal and metal oxide microplasma devices with defect free oxide 有权
标题翻译：具有缺陷氧化物的金属和金属氧化物微质体装置阵列
公开(公告)号：US08968668B2
公开(公告)日：2015-03-03
申请号：US13527842
申请日：2012-06-20
申请人： J. Gary Eden , Sung-Jin Park , Jin Hoon Cho , Seung Hoon Sung , Min Hwan Kim
发明人： J. Gary Eden , Sung-Jin Park , Jin Hoon Cho , Seung Hoon Sung , Min Hwan Kim
IPC分类号： B01J19/08 , H01J37/32 , C25D11/02 , H01J11/18 , C25D11/12 , C25D11/18 , C25D11/26 , H01J17/16
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00842 , B01J2219/00853 , B01J2219/00891 , C01B13/115 , C25D11/02 , C25D11/022 , C25D11/026 , C25D11/12 , C25D11/18 , C25D11/26 , H01J11/18 , H01J11/22 , H01J11/34 , H01J17/066 , H01J17/16 , H01J37/32055 , H05H2001/2412 , H05H2001/2418
摘要： A microplasma device of the invention includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel upon application of suitable voltage and at least one of the electrodes is encapsulated within the thick metal oxide layer. Large arrays can be formed and are highly robust as lack of microcracks in the oxide avoid dielectric breakdown.
摘要翻译：本发明的微血管装置包括至少部分地限定在基本上由无缺氧氧化物组成的厚金属氧化物层内的微腔或微通道。电极相对于微腔或微通道布置，以在施加适当电压时刺激所述微腔或微通道中的等离子体产生，并且至少一个电极被封装在厚金属氧化物层内。可以形成大阵列，并且由于在氧化物中缺少微裂纹以避免电介质击穿，因此它们具有很强的鲁棒性。

3. 发明授权

US08471471B2 Electron injection-controlled microcavity plasma device and arrays 有权
标题翻译：电子注入控制的微腔等离子体装置和阵列
公开(公告)号：US08471471B2
公开(公告)日：2013-06-25
申请号：US12682974
申请日：2008-10-27
申请人： J. Gary Eden , Kuo-Feng Chen
发明人： J. Gary Eden , Kuo-Feng Chen
IPC分类号： H01J17/49 , H05H1/24
CPC分类号： H01J11/18 , H01J61/82
摘要： An embodiment of the invention is a microcavity plasma device that can be controlled by a low voltage electron emitter. The microcavity plasma device includes driving electrodes disposed proximate to a microcavity and arranged to contribute to generation of plasma in the microcavity upon application of a driving voltage. An electron emitter is arranged to emit electrons into the microcavity upon application of a control voltage. The electron emitter is an electron source having an insulator layer defining a tunneling region. The microplasma itself can serve as a second electrode necessary to energize the electron emitter. While a voltage comparable to previous microcavity plasma devices is still imposed across the microcavity plasma devices, control of the devices can be accomplished at high speeds and with a small voltage, e.g., about 5V to 30V in preferred embodiments.
摘要翻译：本发明的一个实施例是可以由低电压电子发射器控制的微腔等离子体装置。微腔等离子体装置包括靠近微腔设置的驱动电极，并布置成有助于在施加驱动电压时在微腔中产生等离子体。电子发射器布置成在施加控制电压时将电子发射到微腔中。电子发射体是具有限定隧道区域的绝缘体层的电子源。微质体本身可以用作为电子发射体通电所必需的第二电极。虽然与先前的微腔等离子体器件相当的电压仍然施加在微腔等离子体器件之间，但是在优选实施例中，器件的控制可以在高速和小电压下实现，例如约5V至30V。

4. 发明申请

US20120104554A1 FLEXIBLE AND ON WAFER HYBRID PLASMA-SEMICONDUCTOR TRANSISTORS 有权
标题翻译：柔性和等离子体混合等离子体半导体晶体管
公开(公告)号：US20120104554A1
公开(公告)日：2012-05-03
申请号：US13186401
申请日：2011-07-19
申请人： J. Gary Eden , Paul A. Tchertchian , Thomas J. Houlahan , Dane J. Sievers , Benben Li , Clark J. Wagner
发明人： J. Gary Eden , Paul A. Tchertchian , Thomas J. Houlahan , Dane J. Sievers , Benben Li , Clark J. Wagner
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L33/02 , H01J17/066 , H01J17/49 , H01L29/0821 , H01L29/7317
摘要： Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). Doped solid state semiconductor regions are in a thin flexible solid state substrate, and a flexible non conducting material defining a microcavity adjacent the semiconductor regions. The flexible non conducting material is bonded to the thin flexible solid state substrate, and at least one electrode is arranged with respect to said flexible substrate to generate a plasma in said microcavity, where the plasma will influence or perform a semiconducting function in cooperation with said solid state semiconductor regions. A preferred on-wafer device is formed on a single side of a silicon on insulator wafer and defines the collector (plasma cavity), emitter and base regions on a common side, which provides a simplified and easy to manufacture structure. A preferred embodiment array of flexible hybrid plasma transistors of the invention is an n+pn PBJT fabricated between two flexible sheets. One or both of the flexible sheets is transparent. The overall array structure is planar, and the planarized structure is sealed between the two flexible sheets. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.
摘要翻译：优选实施例柔性和晶片上混合等离子体半导体器件具有至少一个活性固态半导体区域; 以及在活性固态半导体区域附近产生的等离子体。掺杂的固态半导体区域处于薄的柔性固态衬底和限定邻近半导体区域的微腔的柔性非导电材料。柔性非导电材料结合到薄柔性固态衬底上，并且相对于所述柔性衬底布置至少一个电极，以在所述微腔中产生等离子体，其中所述等离子体将与所述柔性衬底配合影响或执行半导体功能固态半导体区域。优选的晶片上器件形成在绝缘体上硅晶片的单侧上，并且在公共侧上限定了集电体（等离子体腔），发射极和基极区域，这提供了简化且易于制造的结构。本发明的柔性混合等离子体晶体管的优选实施例阵列是在两个柔性片之间制造的n + pn PBJT。一个或两个柔性片是透明的。整个阵列结构是平面的，并且平坦化结构被密封在两个柔性片之间。在阵列中的等离子体收集器的操作期间发出可见光或紫外光。在优选实施例中，阵列中的各个PBJT用作全色显示器的子像素。

5. 发明申请

US20110181169A1 MICROCAVITY AND MICROCHANNEL PLASMA DEVICE ARRAYS IN A SINGLE, UNITARY SHEET 有权
标题翻译：微阵列和微通道等离子体装置阵列
公开(公告)号：US20110181169A1
公开(公告)日：2011-07-28
申请号：US12991237
申请日：2009-05-14
申请人： J. Gary Eden , Sung-Jin Park , Taek-Lim Kim , Kwang-Soo Kim
发明人： J. Gary Eden , Sung-Jin Park , Taek-Lim Kim , Kwang-Soo Kim
IPC分类号： H05H1/24 , C25D11/02
CPC分类号： H05H1/24 , H01J11/36 , H01J61/86 , H05H1/2406 , H05H2001/2418
摘要： An array of microcavity plasma devices is formed in a unitary sheet of oxide with embedded microcavities or microchannels and embedded metal driving electrodes isolated by oxide from the microcavities or microchannels and arranged so as to generate sustain a plasma in the embedded microcavities or microchannels upon application of time-varying voltage when a plasma medium is contained in the microcavities or microchannels.
摘要翻译：微腔等离子体装置的阵列形成在具有嵌入的微腔或微通道的一体的氧化物片和由微腔或微通道中的氧化物隔离的嵌入的金属驱动电极中，并且被布置成在施加了微腔或微通道时在嵌入的微腔或微通道中产生维持等离子体当等离子体介质包含在微通道或微通道中时，具有时变电压。

6. 发明申请

US20110140073A1 SEMICONDUCTING MICROCAVITY AND MICROCHANNEL PLASMA DEVICES 有权
标题翻译： SEMICONDUCING MICROCAVITY和MICROCHANNEL PLASMA DEVICES
公开(公告)号：US20110140073A1
公开(公告)日：2011-06-16
申请号：US12915630
申请日：2010-10-29
申请人： J. Gary Eden , Paul Tchertchian , Clark J. Wagner , Steve Solomon , Robert Ginn
发明人： J. Gary Eden , Paul Tchertchian , Clark J. Wagner , Steve Solomon , Robert Ginn
IPC分类号： H01L29/66
CPC分类号： H01J11/12 , H01J65/046 , H05H1/46
摘要： Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode.
摘要翻译：本发明的优选实施例提供半导体微腔等离子体装置。本发明的优选实施例是具有至少两个pn结的微腔等离子体装置，由微腔或微通道隔开并由时变电压波形的交替半周期供电。备选实施例具有单个pn结。在单个或多个pn结之间的整个空腔中产生微血管，并且介电层将微血管与单个或多个pn结隔离。附加的优选实施例是其中等离子体本身的空间范围或与pn结相关联的n或p区域被第三（控制）电极改变的装置。

7. 发明申请

US20110037102A1 HYBRID PLASMA-SEMICONDUCTOR OPTOELECTRONIC DEVICES AND TRANSISTORS 有权
标题翻译：混合等离子体半导体光电器件和晶体管
公开(公告)号：US20110037102A1
公开(公告)日：2011-02-17
申请号：US12817551
申请日：2010-06-17
申请人： Paul A. Tchertchian , Clark J. Wagner , J. Gary Eden
发明人： Paul A. Tchertchian , Clark J. Wagner , J. Gary Eden
IPC分类号： H01L29/772 , H01L29/861
CPC分类号： H01L29/73 , H01J17/40 , H01L29/0821 , H01L29/1004 , H01L29/49 , H01L29/7311 , H01L29/772 , H01L29/78
摘要： The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.
摘要翻译：本发明提供了组合半导体和等离子体器件，包括晶体管和光电晶体管。优选的实施方案是混合等离子体半导体器件具有活性固态半导体区域和在活性固态半导体区域附近产生的等离子体。本发明的装置被称为混合等离子体半导体器件，其中等离子体，优选微质体与常规固态半导体器件区域配合，以影响或执行诸如由晶体管提供的半导体功能。本发明提供了具有以前不可用的特性的混合等离子体电子/光子器件系列。在本发明的晶体管器件中，低温辉光放电与混合晶体管是一体的。示例性的优选器件包括混合BJT和MOSFET器件。

8. 发明申请

US20100296978A1 MICROCHANNEL LASER HAVING MICROPLASMA GAIN MEDIA 有权
标题翻译：具有微波增益介质的MICROCHANNEL激光
公开(公告)号：US20100296978A1
公开(公告)日：2010-11-25
申请号：US12682977
申请日：2008-10-27
申请人： Sung-Jin Park , J. Gary Eden , Paoyei Chen , Paul A. Tchertchian , Thomas M. Spinka
发明人： Sung-Jin Park , J. Gary Eden , Paoyei Chen , Paul A. Tchertchian , Thomas M. Spinka
IPC分类号： H01S5/20 , H01S5/187 , B01J19/08
CPC分类号： H01S3/05 , H01S3/03 , H01S3/063 , H01S3/09 , H01S3/0971
摘要： The invention provides microchannel lasers having a microplasma gain medium. Lasers of the invention can be formed in semiconductor materials, and can also be formed in polymer materials. In a microlaser of the invention, high density plasmas are produced in microchannels. The microplasma acts as a gain medium with the electrodes sustaining the plasma in the microchannel. Reflectors are used with the microchannel for obtaining optical feedback to obtain lasing in the microplasma gain medium in devices of the invention for a wide range of atomic and molecular species. Several atomic and molecular gain media will produce sufficiently high gain coefficients that reflectors (mirrors) are not necessary. Microlasers of the invention are based on microplasma generation in channels of various geometries. Preferred embodiment microlaser designs can be fabricated in semiconductor materials, such as Si wafers, by standard photolithographic techniques, or in polymers by replica molding.
摘要翻译：本发明提供了具有微质增益介质的微通道激光器。本发明的激光器可以形成在半导体材料中，也可以形成在聚合物材料中。在本发明的微型激光器中，在微通道中产生高密度等离子体。微量体作为增益介质，其中电极在微通道中维持等离子体。反射器与微通道一起使用以获得光学反馈，以在广泛的原子和分子物种的本发明装置中的微量级增益介质中获得激光。几个原子和分子增益介质将产生足够高的增益系数，反射器（反射镜）不是必需的。本发明的微型扫描器基于各种几何形状的通道中的微量生成。优选实施例微激光器设计可以通过标准光刻技术在半导体材料（例如Si晶片）中或通过复制成型制成聚合物。

9. 发明授权

US07642720B2 Addressable microplasma devices and arrays with buried electrodes in ceramic 有权
标题翻译：可寻址微型器件和阵列，其中埋置电极在陶瓷中
公开(公告)号：US07642720B2
公开(公告)日：2010-01-05
申请号：US11337969
申请日：2006-01-23
申请人： J. Gary Eden , Sung-Jin Park
发明人： J. Gary Eden , Sung-Jin Park
IPC分类号： H01J17/04 , H01J17/49
CPC分类号： H01J11/18 , H05H1/2406 , H05H2001/2418 , H05H2001/2437
摘要： An array of microcavity plasma devices is formed in a ceramic substrate that provides structure for and isolation of an array of microcavities that are defined in the ceramic substrate. The ceramic substrate isolates the microcavities from electrodes disposed within the ceramic substrate. The electrodes are disposed to ignite a discharge in microcavities in the array of microcavities upon application of a time-varying potential between the electrodes. Embodiments of the invention include electrode and microcavity arrangements that permit addressing of individual microcavities or groups of microcavities. The contour of the microcavity wall allows for the electric field within the microcavity to be shaped.
摘要翻译：在陶瓷衬底中形成微腔等离子体器件的阵列，其提供在陶瓷衬底中限定的微腔阵列的结构和隔离。陶瓷衬底将微腔与设置在陶瓷衬底内的电极隔离。电极被设置成在施加电极之间的时变电位时，以微腔阵列中的微腔中点燃放电。本发明的实施例包括允许寻址单个微腔或微腔组的电极和微腔布置。微腔壁的轮廓允许微腔内的电场成形。

10. 发明申请

US20090295288A1 ADDRESSABLE MICROPLASMA DEVICES AND ARRAYS WITH BURIED ELECTRODES IN CERAMIC 有权
标题翻译：可焊接麦克风设备和阵列与陶瓷电极
公开(公告)号：US20090295288A1
公开(公告)日：2009-12-03
申请号：US11337969
申请日：2006-01-23
申请人： J. Gary Eden , Sung-Jin Park
发明人： J. Gary Eden , Sung-Jin Park
IPC分类号： H01J17/49
CPC分类号： H01J11/18 , H05H1/2406 , H05H2001/2418 , H05H2001/2437
摘要： An array of microcavity plasma devices is formed in a ceramic substrate that provides structure for and isolation of an array of microcavities that are defined in the ceramic substrate. The ceramic substrate isolates the microcavities from electrodes disposed within the ceramic substrate. The electrodes are disposed to ignite a discharge in microcavities in the array of microcavities upon application of a time-varying potential between the electrodes. Embodiments of the invention include electrode and microcavity arrangements that permit addressing of individual microcavities or groups of microcavities. The contour of the microcavity wall allows for the electric field within the microcavity to be shaped.
摘要翻译：在陶瓷衬底中形成微腔等离子体器件的阵列，其提供在陶瓷衬底中限定的微腔阵列的结构和隔离。陶瓷衬底将微腔与设置在陶瓷衬底内的电极隔离。电极被设置成在施加电极之间的时变电位时，以微腔阵列中的微腔中点燃放电。本发明的实施例包括允许寻址单个微腔或微腔组的电极和微腔布置。微腔壁的轮廓允许微腔内的电场成形。

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