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1. 发明授权

US4618397A Method of manufacturing semiconductor device having a pressure sensor 失效
标题翻译：具有压力传感器的半导体器件的制造方法
公开(公告)号：US4618397A
公开(公告)日：1986-10-21
申请号：US802431
申请日：1985-11-27
申请人： Isao Shimizu , Kazuji Yamada
发明人： Isao Shimizu , Kazuji Yamada
IPC分类号： G01L9/00 , H01L29/84 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/924 , Y10S438/97 , Y10S438/977 , Y10T29/49103
摘要： The present invention relates to a semiconductor device having a semiconductor pressure sensor, which includes a heavily-doped semiconductor layer having a predetermined impurity concentration gradient and formed at the bottom of a diaphragm (membrane portion). Owing to the presence of this semiconductor layer, a flat diaphragm is formed, and a semiconductor pressure sensor of high precision is provided.
摘要翻译：本发明涉及具有半导体压力传感器的半导体器件，其包括具有预定杂质浓度梯度并形成在隔膜（膜部分）底部的重掺杂半导体层。由于存在该半导体层，所以形成平坦的膜片，并提供高精度的半导体压力传感器。

2. 发明授权

US4591780A Constant current source device having a ratio metricity between supply voltage and output current 失效
标题翻译：恒流源装置具有电源电压和输出电流之间的比率
公开(公告)号：US4591780A
公开(公告)日：1986-05-27
申请号：US559467
申请日：1983-12-08
申请人： Kazuji Yamada , Ryoichi Kobayashi , Yasuo Nagai , Isao Shimizu , Kanji Kawakami
发明人： Kazuji Yamada , Ryoichi Kobayashi , Yasuo Nagai , Isao Shimizu , Kanji Kawakami
IPC分类号： H03F3/343 , G05F3/26 , G05F3/30 , H03F3/34 , H03F3/347 , G05F3/20
CPC分类号： G05F3/30 , G05F3/265
摘要： A current source device controls a rate of change of current flowing through a load so that the change rate of the current is equal to a change rate of a fluctuating supply voltage. A first transistor is fed with the supply voltage via a first resistor connected to its collector and a second resistor connected to its emitter. A second transistor has a base connected to a base of the first transistor, an emitter connected to a third resistor and a collector connected to a load. A current to the load is fed from the supply voltage via the load, the collector and emitter of the second transistor and the third resistor. The collector and base of the first transistor are respectively connected to a base and an emitter of a third transistor having a collector fed with the supply voltage. The ratio between a voltage drop caused across the second resistor by a reference current flowing through the first resistor, the collector and emitter of the first transistor and the second resistor, and a voltage drop caused across the third resistor by an emitter current of the second transistor, which is substantially equal to a collector current of the second transistor flowing through the load, is set to a predetermined value. The emitter area of the second transistor is enlarged beyond that of the first transistor to obtain a sufficiently large output current.
摘要翻译：电流源装置控制流过负载的电流的变化率，使得电流的变化率等于电源电压波动的变化率。第一晶体管经由连接到其集电极的第一电阻器和连接到其发射极的第二电阻器馈送电源电压。第二晶体管具有连接到第一晶体管的基极的基极，连接到第三电阻器的发射极和连接到负载的集电极。通过负载，第二晶体管的集电极和发射极以及第三电阻从供电电压馈送到负载的电流。第一晶体管的集电极和基极分别连接到具有馈送有电源电压的集电极的第三晶体管的基极和发射极。通过流过第一电阻器的参考电流，第一晶体管的集电极和发射极以及第二电阻器在第二电阻器之间引起的电压降之间的比率以及由第二电阻器的发射极电流引起的第三电阻器的电压降基本上等于流过负载的第二晶体管的集电极电流的晶体管被设定为预定值。第二晶体管的发射极面积比第一晶体管的发射极面积增大，以获得足够大的输出电流。

3. 发明授权

US06588647B2 Liquid cooled circuit device and a manufacturing method thereof 失效
公开(公告)号：US06588647B2
公开(公告)日：2003-07-08
申请号：US10228295
申请日：2002-08-27
申请人： Kazuji Yamada , Akihiro Tamba , Takayoshi Nakamura , Ryuichi Saito , Toshio Ogawa , Hisanori Okamura
发明人： Kazuji Yamada , Akihiro Tamba , Takayoshi Nakamura , Ryuichi Saito , Toshio Ogawa , Hisanori Okamura
IPC分类号： B23K2012
CPC分类号： H05K7/20872 , H01L2924/0002 , H05K7/20927 , Y10T29/49126 , Y10T29/4913 , Y10T29/4935 , H01L2924/00
摘要： A liquid-cooled circuit device including: a module having a circuit element and a module base plate on surface of which the circuit element is mounted; a circuit case for accommodating the module; and a cooling liquid chamber for flowing a cooling liquid in contact with a back face of the module base plate of said module. The module base plate of the module is fitted into an opening provided in a member forming the cooling liquid chamber and welded without a gap.

4. 发明授权

US5097318A Semiconductor package and computer using it 失效
标题翻译：半导体封装和使用它的计算机
公开(公告)号：US5097318A
公开(公告)日：1992-03-17
申请号：US331802
申请日：1989-04-03
申请人： Akira Tanaka , Kazuji Yamada , Hirokazu Inoue , Hideo Arakawa , Masahide Okamoto
发明人： Akira Tanaka , Kazuji Yamada , Hirokazu Inoue , Hideo Arakawa , Masahide Okamoto
IPC分类号： H01L23/538 , H01L23/04 , H01L23/057 , H01L23/12 , H01L23/467 , H01L23/498 , H01L23/50
CPC分类号： H01L23/49822 , H01L23/057 , H01L23/467 , H01L23/49838 , H01L2224/32225 , H01L2224/451 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H01L2924/15312 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/19041 , H01L2924/30107
摘要： A cavity-down type package for a semiconductor device comprises an insulating base substrate on which the semiconductor device and another insulating cap substrate with plural outer connection terminals on its outer surface and with electrodes provided on conductive layers for electric conduction on its inner surface. The electrodes on the insulating base substrate and those on the insulating cap substrate are connected with each other by using conductive material such as bumps.
摘要翻译：一种用于半导体器件的降空型封装，包括其上安装有半导体器件（1）的绝缘基底（6）和在其外表面上具有多个外连接端子（5）的另一绝缘帽衬底（8）其中电极（11）设置在导电层（4）上，用于在其内表面上导电。绝缘基底基板上的电极和绝缘帽基板（8）上的电极通过诸如凸块的导电材料相互连接。

5. 发明授权

US5095359A Semiconductor package and computer using the package 失效
标题翻译：使用封装的半导体封装和计算机
公开(公告)号：US5095359A
公开(公告)日：1992-03-10
申请号：US413622
申请日：1989-09-28
申请人： Akira Tanaka , Hirokazu Inoue , Kazuji Yamada , Kunio Miyazaki , Osamu Miura , Hideo Arakawa , Hiroshi Yokoyama , Yoshio Naganuma , Atsushi Morihara , Katsunori Ouchi
发明人： Akira Tanaka , Hirokazu Inoue , Kazuji Yamada , Kunio Miyazaki , Osamu Miura , Hideo Arakawa , Hiroshi Yokoyama , Yoshio Naganuma , Atsushi Morihara , Katsunori Ouchi
IPC分类号： G06F1/18 , H01L21/60 , H01L23/057 , H01L23/467 , H01L23/498 , H01L23/50 , H01L25/065
CPC分类号： H01L23/467 , H01L23/057 , H01L23/49822 , H01L23/50 , H01L24/32 , H01L25/0655 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49109 , H01L2224/73253 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2924/01004 , H01L2924/01019 , H01L2924/01025 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12041 , H01L2924/14 , H01L2924/15174 , H01L2924/15312 , H01L2924/1532 , H01L2924/15787 , H01L2924/16152 , H01L2924/16195 , H01L2924/19041 , H01L2924/30107
摘要： A semiconductor package for use in computers includes a insulating substrate onto which a semiconductor device is mounted, an insulating cap which shuts out outside air and seals said semiconductor device, power-source lines which provide power to the semiconductor device, and signal lines which transmit output signals from the semiconductor device to external circuits. The signal lines are arranged perpendicularly to the insulating substrate so that they are prevented from the dielectric constant of the insulating substrate, while the power-source lines are formed within the insulating substrate and connected through conductive layers parallel to the surface onto which the semiconductor is mounted to external leads.

6. 发明授权

US4670969A Method of making silicon diaphragm pressure sensor 失效
标题翻译：制造硅膜压力传感器的方法
公开(公告)号：US4670969A
公开(公告)日：1987-06-09
申请号：US694990
申请日：1985-01-25
申请人： Kazuji Yamada , Yutaka Kobayashi , Kanji Kawakami , Satoshi Shimada , Masanori Tanabe , Shigeyuki Kobori
发明人： Kazuji Yamada , Yutaka Kobayashi , Kanji Kawakami , Satoshi Shimada , Masanori Tanabe , Shigeyuki Kobori
IPC分类号： H01L29/84 , G01L9/00 , G01P15/08 , H01L21/428
CPC分类号： G01L9/0042 , G01P15/0802 , G01P2015/084 , Y10S148/012 , Y10S148/159 , Y10S148/168 , Y10T29/42 , Y10T29/49103
摘要： A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.
摘要翻译：制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。在氧化物膜上形成多晶硅层。在形成多晶硅层之前可以部分地去除氧化膜。将多晶硅层加热熔化，使其重结晶，从而将多晶硅层转化为单晶硅层。在单晶硅层上可以外延生长另外的单晶硅层。通过使用氧化膜作为蚀刻停止层，在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分，从而提供压力传感器的隔膜。

7. 发明授权

US4527428A Semiconductor pressure transducer 失效
标题翻译：半导体压力传感器
公开(公告)号：US4527428A
公开(公告)日：1985-07-09
申请号：US442665
申请日：1982-12-30
申请人： Satoshi Shimada , Kazuji Yamada , Seikou Suzuki , Shigeyuki Kobori , Motohisa Nishihara
发明人： Satoshi Shimada , Kazuji Yamada , Seikou Suzuki , Shigeyuki Kobori , Motohisa Nishihara
IPC分类号： G01L9/00 , G01L13/02 , G01L9/06
CPC分类号： G01L19/147 , G01L13/025 , G01L19/0038 , G01L19/0645 , G01L9/0054
摘要： A semiconductor pressure transducer including a measuring diaphragm of semiconductor material for sensing pressure supported by a support member of the same material. An oxide layer and a thin glass layer are interposed between the measuring diaphragm and the support member.
摘要翻译：一种半导体压力传感器，包括用于感测由相同材料的支撑构件支撑的压力的半导体材料的测量膜。氧化层和薄玻璃层介于测量膜片和支撑件之间。

8. 发明授权

US4065971A Semiconductor pressure transducer 失效
标题翻译：半导体压力传感器
公开(公告)号：US4065971A
公开(公告)日：1978-01-03
申请号：US701531
申请日：1976-07-01
申请人： Michitaka Shimazoe , Kousuke Nakamura , Yasuo Matsushita , Satoshi Shimada , Kazuji Yamada , Yukio Takahashi
发明人： Michitaka Shimazoe , Kousuke Nakamura , Yasuo Matsushita , Satoshi Shimada , Kazuji Yamada , Yukio Takahashi
IPC分类号： H01L29/84 , G01L9/00 , G01L9/06
CPC分类号： G01L9/0054
摘要： A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.
摘要翻译：半导体压力传感器包括其外边缘固定的单晶半导体膜片。当经受压力时，换能器在其中心部分产生相反极性的径向应变，并且围绕中心部分的部分靠近应变诱导区域的边缘产生。隔膜包含由与膜片电气隔离的相同导电类型的半导体材料形成的多个细长电阻。位于彼此靠近的单个组的电阻以桥的形式组合。形成桥的一组相对臂的电阻的纵向方向沿与构成桥的另一组相对臂的细长电阻的纵向相同的晶体系的轴线延伸。然而，形成桥的相对臂的单独的电阻组的纵向方向在方向上，使得它们不会彼此正交相交。

9. 发明授权

US6144571A Semiconductor module, power converter using the same and manufacturing method thereof 有权
标题翻译：半导体模块，使用该半导体模块的功率转换器及其制造方法
公开(公告)号：US6144571A
公开(公告)日：2000-11-07
申请号：US506269
申请日：2000-02-17
申请人： Yasushi Sasaki , Yutaka Maeno , Hiroshi Fujii , Kinya Nakatsu , Toshio Ogawa , Akihiro Tamba , Kazuji Yamada
发明人： Yasushi Sasaki , Yutaka Maeno , Hiroshi Fujii , Kinya Nakatsu , Toshio Ogawa , Akihiro Tamba , Kazuji Yamada
IPC分类号： H02M7/04 , H01L25/16 , H02M7/48 , H05K1/14 , H03M7/00 , H01L23/043
CPC分类号： H01L25/165 , H01L25/162 , H01L2224/45124 , H01L2224/48137 , H01L2924/13055 , H01L2924/14 , H01L2924/19041 , H05K1/144
摘要： In order to bring a moduled power converter into less size and cost in the case of a structure having a lead-insert-case, an insulated metal circuit board and a printed circuit board, a difficulty was encountered in thinning a wiring width and an increase in pad area for each metal wire has interfered with a reduction in its size and cost.In the present invention to cope with it, a power converter is constructed by using a semiconductor module having such a structure that a metal base and lead frames are adhered to each other in a state in which an insulating adhesive sheet is interposed therebetween, a resin-molded outer package is adhered to the metal base with an adhesive or the like, and a resin sealing agent is charged into the resin-molded outer package to thereby integrally seal the resin-molded outer package and circuit parts such as semiconductor elements implemented therein, whereby a reduction in size and cost thereof is realized.
摘要翻译：为了在具有引线插入壳体，绝缘金属电路板和印刷电路板的结构的情况下将模块化的功率转换器带入更小的尺寸和成本，在布线宽度变薄和增加时遇到困难在每个金属线的焊盘区域中，其尺寸和成本受到干扰。在本发明中，通过使用具有这样的结构的半导体模块来构成功率转换器，所述半导体模块具有金属基底和引线框架彼此粘合的状态，其间插入有绝缘粘合片，树脂模塑的外包装用粘合剂等粘合到金属基底上，树脂密封剂装入树脂模塑的外包装中，从而将树脂模塑的外包装和其中实现的半导体元件的电路部件整体密封从而实现了尺寸和成本的降低。

10. 发明授权

US5661343A Power hybrid integrated circuit apparatus 失效
标题翻译：电力混合集成电路设备
公开(公告)号：US5661343A
公开(公告)日：1997-08-26
申请号：US405791
申请日：1995-03-16
申请人： Masaaki Takahashi , Kazuji Yamada , Hideki Miyazaki , Kazuo Kato
发明人： Masaaki Takahashi , Kazuji Yamada , Hideki Miyazaki , Kazuo Kato
IPC分类号： H05K1/05 , H01L23/14 , H01L25/16 , H05K1/03 , H05K1/14 , H05K3/22 , H01L23/34
CPC分类号： H05K1/142 , H01L23/142 , H01L25/16 , H01L2224/45124 , H01L2224/48091 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/19041 , H01L2924/19105 , H05K1/0306 , H05K1/0313 , H05K2201/1028 , H05K3/0061 , H05K3/222
摘要： An input-output wiring for the power circuit and a ground layer are formed on a metal substrate of a power hybrid integrated circuit apparatus. A plurality of windows are opened at predetermined positions of a circuit substrate to which electronic parts such as an IC driver, a chip resistor etc. are connected. Ceramic chips are soldered on the exposed surface of the metal substrate in the windows, and the power semiconductor elements are connected through metal bridges on the ceramic chips. Connection between lower electrode of adjoining power semiconductor elements or between lower part of the power semiconductor element and an input/output wiring is made by means of a part of the metal bridge.
摘要翻译：用于电力电路和接地层的输入输出布线形成在功率混合集成电路装置的金属基板上。在电路基板的与IC驱动器，片式电阻等电子部件连接的规定位置开放多个窗口。陶瓷芯片焊接在窗户的金属基板的露出面上，功率半导体元件通过陶瓷芯片上的金属桥连接。相邻的功率半导体元件的下电极之间或功率半导体元件的下部与输入/输出布线之间的连接通过金属桥的一部分制成。

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