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1. 发明授权

US5998092A Water soluble negative-working photoresist composition 失效
标题翻译：水溶性负性光刻胶组合物
公开(公告)号：US5998092A
公开(公告)日：1999-12-07
申请号：US85880
申请日：1998-05-27
申请人： Iain McCulloch , Anthony J. East , Ming Kang , Richard Keosian , Hyun-Nam Yoon
发明人： Iain McCulloch , Anthony J. East , Ming Kang , Richard Keosian , Hyun-Nam Yoon
IPC分类号： C08F12/22 , C08F16/12 , C08F16/36 , C08F18/14 , C08F20/58 , C08F246/00 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03F7/032 , C08F24/00
CPC分类号： C08F246/00 , G03F7/038 , G03F7/039 , G03F7/0045
摘要： A water soluble polymer that when used with a suitable photoacid generator (PAG) forms a negative working water soluble photoresist. The polymer comprises of a backbone, such as polyvinyl ether, coupled by a linkage group to an acetal protected .beta.-keto acid group. With the addition of a number of commercially available photo acid generators, the polymer formulation forms a negative working photoresist that is water soluble. Exposure to radiation will cause a photoacid catalyzed deprotection of the acetal group, yielding a .beta.-keto acid which, upon heating, will undergo decarboxylation, which results in a water insoluble photoproduct and evolution of CO.sub.2 as a byproduct. This photochemically induced reaction results in a significant change in the polymer solubility parameter, and the product is no longer soluble in water. As this solubility change does not require crosslinking, there will be no swelling of the resist images on exposure to the aqueous base during development, and hence no loss of resolution. This enables the photoresist to be used at fine resolutions at i-line and deep UV wavelengths.
摘要翻译：当与合适的光酸产生剂（PAG）一起使用时，水溶性聚合物形成负性工业水溶性光致抗蚀剂。聚合物包括主链，例如聚乙烯醚，通过连接基团与缩醛保护的β-酮酸基团偶联。通过添加许多市售的光酸产生剂，聚合物配方形成水溶性的负性光致抗蚀剂。暴露于辐射将导致缩醛基的光酸催化脱保护，产生β-酮酸，其在加热时将经历脱羧，这导致水不溶性光产物和作为副产物的CO 2的释放。这种光化学诱导反应导致聚合物溶解度参数的显着变化，并且产物不再溶于水。由于该溶解度变化不需要交联，因此在显影期间暴露于碱性水溶液时，抗蚀剂图像不会溶胀，因此没有分辨率的损失。这使得光致抗蚀剂可以在i线和深紫外波长处以高分辨率使用。

2. 发明授权

US6060212A 193 nm positive-working photoresist composition 失效
标题翻译： 193nm正性光致抗蚀剂组合物
公开(公告)号：US6060212A
公开(公告)日：2000-05-09
申请号：US96036
申请日：1998-06-11
申请人： Iain McCulloch , Anthony J. East , Ming Kang , Richard Keosian , Hyun-Nam Yoon
发明人： Iain McCulloch , Anthony J. East , Ming Kang , Richard Keosian , Hyun-Nam Yoon
IPC分类号： C08G67/04 , G03F7/039 , H01L21/027 , G03C1/492 , C08F20/00
CPC分类号： C08G67/04 , G03F7/039
摘要： A polymer that when used with a suitable photoacid generator (PAG) forms a positive working photoresist. The polymer comprises of a tartaric polyanhydride backbone, an acetal protected 1,2 diol group; and a fused ring acetal group pendant to the backbone. The acetal protected .alpha.-hydroxy anhydride backbone structure, undergoes an efficient photoacid catalyzed cleavage, which gives rise to small molecular weight fragments which are readily dissolved in an aqueous base developer. This high contrast in solubility allows high resolution images to be produced. The fused rings offer etch resistance and can be comprised of either an adamantone or norcamphor ring structure. With the addition of a commercially available photo acid generator, the polymer formulation forms a positive working photoresist that offers high contrast and resolution.
摘要翻译：当与合适的光致酸产生剂（PAG）一起使用时形成正性光致抗蚀剂的聚合物。该聚合物包含酒石酸聚酐主链，缩醛保护的1,2-二醇基团; 和稠环缩醛基团挂在骨架上。缩醛保护的α-羟基酸酐主链结构经历有效的光酸催化裂解，其产生容易溶解在碱性显影剂水溶液中的小分子量片段。这种高对比度的溶解度允许产生高分辨率图像。稠环提供耐蚀刻性，并且可以由金刚烷酮或诺卡辛环结构组成。通过添加市售的光酸产生剂，聚合物配方形成提供高对比度和分辨率的正性光致抗蚀剂。

3. 发明授权

US5733714A Antireflective coating for photoresist compositions 失效
标题翻译：用于光致抗蚀剂组合物的抗反射涂层
公开(公告)号：US5733714A
公开(公告)日：1998-03-31
申请号：US724109
申请日：1996-09-30
申请人： Iain McCulloch , Ralph R. Dammel , Anthony J. Corso , Shuji Ding , Dana L. Durham , Ping-Hung Lu , Ming Kang , Dinesh N. Khanna
发明人： Iain McCulloch , Ralph R. Dammel , Anthony J. Corso , Shuji Ding , Dana L. Durham , Ping-Hung Lu , Ming Kang , Dinesh N. Khanna
IPC分类号： G03F7/004 , C08F16/26 , C08F18/04 , C08F20/30 , C08F20/58 , C08F26/06 , G03C1/835 , G03F7/09 , G03F7/11 , H01L21/027 , G03C5/00 , C03F8/30
CPC分类号： G03C1/835 , G03F7/091 , Y10S430/151
摘要： The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or a mixture of organic solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and a unit containing a crosslinking group.
摘要翻译：本发明涉及一种新颖的抗反射涂层溶液及其在光刻中的应用。抗反射涂层溶液包括新型聚合物和有机溶剂或有机溶剂的混合物，其中新型聚合物包含含有吸收约180nm至约450nm的染料的单元和含有交联基团的单元。

4. 发明授权

US5652297A Aqueous antireflective coatings for photoresist compositions 失效
标题翻译：用于光致抗蚀剂组合物的水性抗反射涂层
公开(公告)号：US5652297A
公开(公告)日：1997-07-29
申请号：US699001
申请日：1996-08-16
申请人： Iain McCulloch , Ralph R. Dammel , Dana L. Durham , Ping-Hung Lu , Ming Kang , Dinesh N. Khanna , Shuji Ding
发明人： Iain McCulloch , Ralph R. Dammel , Dana L. Durham , Ping-Hung Lu , Ming Kang , Dinesh N. Khanna , Shuji Ding
IPC分类号： C08F8/00 , C08F20/60 , G03F7/09 , C08F8/30 , C08F226/00 , G03G13/06
CPC分类号： G03F7/091 , C08F20/60 , C08F8/30 , C08F2800/10 , C08F2800/20 , C08F2810/20
摘要： The present invention relates to a novel aqueous antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and water, where the novel polymer of the antireflective coating comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm, at least one unit containing a crosslinking group and at least one unit derived from a hydrophilic vinyl monomer or a vinyl monomer capable of becoming hydrophilic.
摘要翻译：本发明涉及一种新颖的水性抗反射涂层溶液及其在光刻中的应用。抗反射涂层溶液包含新的聚合物和水，其中抗反射涂层的新型聚合物包含至少一个含有吸收约180nm至约450nm的染料的单元，至少一个含有交联基团和至少一个衍生自亲水性乙烯基单体或能够变成亲水性的乙烯基单体的单元。

5. 发明授权

US08431682B2 Regioregular polyselenophenes 有权
标题翻译：区域性聚硒吩
公开(公告)号：US08431682B2
公开(公告)日：2013-04-30
申请号：US12094895
申请日：2006-10-30
申请人： Martin Heeney , Warren Duffy , Iain McCulloch , Simon Higgins , David Crouch , Peter Skabara
发明人： Martin Heeney , Warren Duffy , Iain McCulloch , Simon Higgins , David Crouch , Peter Skabara
IPC分类号： C08G61/12 , C09K11/06 , H01L29/786 , H01L51/50
CPC分类号： C08G61/123 , H01L51/0036 , Y02E10/549 , Y10T428/1005
摘要： The invention relates to regioregular polyselenophenes, to their use as semiconductors or charge transport materials, in optical, electro-optical or electronic devices, and to optical, electro-optical or electronic devices comprising them.
摘要翻译：本发明涉及在光学，电光或电子装置中用于半导体或电荷传输材料的区域性多硒吩，以及包括它们的光学，电光或电子器件。

6. 发明授权

US07829658B2 Mono-, oligo- and polymers of thienothiazole 有权
标题翻译：噻吩噻唑的单，低聚物和聚合物
公开(公告)号：US07829658B2
公开(公告)日：2010-11-09
申请号：US11916944
申请日：2006-05-11
申请人： Warren Duffy , Martin Heeney , Iain McCulloch
发明人： Warren Duffy , Martin Heeney , Iain McCulloch
IPC分类号： C08G75/10
CPC分类号： C07D513/04 , C08G61/123 , C08G61/126 , C09K19/3497 , C09K19/3861 , C09K19/40
摘要： The invention relates to novel mono-, oligo- and polymeric compounds comprising thienothiazole groups, to their use as semiconductors or charge transport materials, in optical, electro-optical or electronic devices, and to optical, electro-optical or electronic devices comprising the novel compounds.
摘要翻译：本发明涉及在光学，电光或电子器件中包含噻吩基噻唑基团的新颖单，低聚和高分子化合物，以及用作半导体或电荷传输材料的光学，电光或电子器件，其包括该新颖的化合物。

7. 发明申请

US20080067475A1 Formulation For Ink-Jet Printing Comprising Semiconducting Polymers 失效
标题翻译：包含半导体聚合物的喷墨印刷的配方
公开(公告)号：US20080067475A1
公开(公告)日：2008-03-20
申请号：US11596847
申请日：2005-04-22
申请人： Iain McCulloch , David Sparrowe , Maxim Shkunov , Phil Bentley , Mark Giles
发明人： Iain McCulloch , David Sparrowe , Maxim Shkunov , Phil Bentley , Mark Giles
IPC分类号： H01L51/40
CPC分类号： H01L51/0007 , H01L51/0005 , H01L51/0036 , H01L51/0512 , Y02E10/549 , Y02P70/521
摘要： The invention relates to formulations comprising one or more polymers with semiconducting, charge transport, photoconducting and/or photo- or electroluminescent properties and one or more organic solvents, to their use for the preparation of electrooptical or electronic devices, including field effect transistors (FETs), electroluminescent, photovoltaic and sensor devices, in particular by ink-jet printing, and to FETs and other semiconducting or light emitting components or devices comprising the formulations.
摘要翻译：本发明涉及包含一种或多种具有半导体，电荷传输，光导和/或光或电致发光性质的聚合物和一种或多种有机溶剂的制剂，用于制备电光器件或电子器件，包括场效应晶体管），电致发光，光电和传感器装置，特别是通过喷墨打印，以及FET和其它包含该配方的半导体或发光部件或器件。

8. 发明申请

US20070246704A1 Polymerisable ThienO[3,2-B]Thiophenes 失效
标题翻译：可聚合噻吩并[3,2-B]噻吩
公开(公告)号：US20070246704A1
公开(公告)日：2007-10-25
申请号：US11570306
申请日：2005-05-13
申请人： Martin Heeney , Iain McCulloch
发明人： Martin Heeney , Iain McCulloch
IPC分类号： C07D495/04 , C09K19/34 , C09K19/38 , G03G5/06 , H01B1/12 , H01L51/30 , H05B33/00
CPC分类号： H01L51/0074 , C07D495/04 , C09K19/3491 , C09K19/38 , C09K19/408 , G03G5/0609 , G03G5/0614 , G03G5/0625 , G03G5/0629 , G03G5/0648 , H01L51/0036 , H01L51/004 , H01L51/0053 , H01L51/0076 , Y02E10/549 , Y02P70/521
摘要： The invention relates to novel polymerisable thieno[3,2-b]thiophenes, to their use as semiconductors or charge transport materials, in optical, electro-optical or electronic devices like for example liquid, crystal displays, optical films, organic field effect transistors (FET or OFET) for thin film transistor liquid crystal displays and integrated circuit devices such as RFID tags, electroluminescent devices in flat panel displays, and in photovoltaic and sensor devices, and to field effect transistors, light emitting devices or ID tags comprising the novel compounds.
摘要翻译：本发明涉及新型可聚合噻吩并[3,2-b]噻吩，用作半导体或电荷传输材料，在光学，电光或电子器件中，例如液体，晶体显示器，光学膜，有机场效应晶体管用于薄膜晶体管液晶显示器的集成电路（FET或OFET）以及诸如RFID标签，平板显示器中的电致发光器件以及光伏和传感器设备中的集成电路器件以及包含该新颖的场效应晶体管，发光器件或ID标签化合物。

9. 发明授权

US07060774B2 Prepolymer material, polymer material, imprinting process and their use 有权
公开(公告)号：US07060774B2
公开(公告)日：2006-06-13
申请号：US10375090
申请日：2003-02-28
申请人： David Sparrowe , Maxim Shkunov , Iain McCulloch
发明人： David Sparrowe , Maxim Shkunov , Iain McCulloch
IPC分类号： C08F22/24
CPC分类号： B29C43/003 , B29C43/021 , B29C2035/0833 , B29C2043/3652 , B29C2059/023 , B29K2105/0002 , B29L2011/0016 , B82Y30/00 , C08F220/12
摘要： The invention relates to a prepolymer material based on monomeric, oligomeric or polymeric compounds with at least one ethylenically unsaturated (meth)acryloyl group. The problem of imperfect imprinting properties, escpecially of an unwanted adhering to the imprinting stamp or mold, is circumvented by a fluorinated organo silane surfactant as an additional component of the prepolymer material. Furthermore, the invention describes an imprinting process for the manufacture of polymer articles with relief on their surface. Better release properties of the polymer article from the stamp or mold are accomplished by applying a surfactant, comprising a fluorinated organo silane, onto the surface of the mold or stamp.

10. 发明申请

US20050184274A1 Reactive mesogenic charge transport compounds 失效
标题翻译：反应性介晶电荷输送化合物
公开(公告)号：US20050184274A1
公开(公告)日：2005-08-25
申请号：US11066007
申请日：2005-02-25
申请人： Martin Heeney , Weimin Zhang , Steven Tierney , David Sparrowe , Maxim Shkunov , Iain McCulloch
发明人： Martin Heeney , Weimin Zhang , Steven Tierney , David Sparrowe , Maxim Shkunov , Iain McCulloch
IPC分类号： C07D333/16 , C07D333/18 , C07D333/24 , C08G61/12 , C09K19/34 , C09K19/38 , C09K19/58 , C09K19/32 , C09K19/52
CPC分类号： C07D333/18 , C07D333/16 , C07D333/24 , C08G61/126 , C09K19/3491 , C09K19/3833 , C09K19/582 , Y10T428/10
摘要： The invention relates to new reactive mesogenic compounds with charge transport properties comprising at least two thiophene groups, their use as semiconductors or charge transport materials, in optical, electro-optical or electronic devices like for example liquid crystal displays, optical films, organic field effect transistors (FET or OFET) for thin film transistor liquid crystal displays and integrated circuit devices such as RFID tags, electroluminescent devices in flat panel displays, and in photovoltaic and sensor devices, and to a field effect transistor, light emitting device or ID tag comprising the reactive mesogenic charge transport compounds.
摘要翻译：本发明涉及具有电荷传输性质的新的反应性介晶化合物，其包括至少两个噻吩基团，它们作为半导体或电荷传输材料的用途，在光学，电光或电子器件中，例如液晶显示器，光学膜，有机场效应用于薄膜晶体管液晶显示器的晶体管（FET或OFET）以及诸如RFID标签，平板显示器中的电致发光器件以及光伏和传感器设备中的集成电路器件以及场效应晶体管，发光器件或ID标签，包括反应性介晶电荷转移化合物。

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