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1. 发明授权

US07006888B2 Semiconductor wafer preheating 失效
公开(公告)号：US07006888B2
公开(公告)日：2006-02-28
申请号：US10046954
申请日：2002-01-14
申请人： Hougong Wang , Kenny King-Tai Ngan , Zheng Xu
发明人： Hougong Wang , Kenny King-Tai Ngan , Zheng Xu
IPC分类号： G06F19/00
CPC分类号： H01L21/67184 , H01L21/67201 , H01L21/67745 , Y10T29/41
摘要： Embodiments of the present invention provide a method, article of manufacture, and apparatus for processing semiconductor wafers. The method includes preheating a semiconductor wafer in two types of chambers. In one embodiment, a first preheating chamber is a load lock and a second preheating chamber is a transition chamber. Semiconductor wafer processing systems which can perform embodiments of the method are presented.

2. 发明授权

US06672864B2 Method and apparatus for processing substrates in a system having high and low pressure areas 失效
标题翻译：在具有高低压区域的系统中处理衬底的方法和装置
公开(公告)号：US06672864B2
公开(公告)日：2004-01-06
申请号：US10229879
申请日：2002-08-27
申请人： Hougong Wang , Zheng Xu , Kenny King-Tai Ngan
发明人： Hougong Wang , Zheng Xu , Kenny King-Tai Ngan
IPC分类号： F27D316
CPC分类号： H01L21/67748 , H01L21/67017 , H01L21/67201
摘要： A positive pressure gradient is maintained across an open access port of an interface chamber such as a load lock chamber which provides an interface between a low pressure chamber such as a transfer or buffer chamber, and a high pressure area such as a staging area or factory interface area. When the access port of the interface chamber is open to the high-pressure area, the positive pressure gradient may be used in some applications to inhibit the flow of gasses from the high-pressure area into the interior of the interface chamber.
摘要翻译：在诸如负载锁定室的接口室的开放进入口处保持正压力梯度，该负载锁定室提供诸如转移或缓冲室的低压室与高压区域（例如分段区域或工厂界面区域。当接口室的进入口对高压区域开放时，在某些应用中可以使用正压梯度来抑制气体从高压区域流入界面室的内部。

3. 发明授权

US6051114A Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition 失效
标题翻译：在HDP物理气相沉积中使用脉冲直流晶片偏置来填充金属通孔/沟槽
公开(公告)号：US6051114A
公开(公告)日：2000-04-18
申请号：US880467
申请日：1997-06-23
申请人： Tse-Yong Yao , Zheng Xu , Kenny King-tai Ngan , Xing Chen , John Urbahn , Lawrence P. Bourget
发明人： Tse-Yong Yao , Zheng Xu , Kenny King-tai Ngan , Xing Chen , John Urbahn , Lawrence P. Bourget
IPC分类号： C23C14/04 , C23C14/34 , C23C14/35 , H01J37/32 , H01L21/768
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/34 , C23C14/357 , H01J37/32623 , H01J37/32678 , H01J37/32706 , H01J37/34 , H01L21/76877
摘要： The present invention provides a method and apparatus for preferential PVD conductor fill in an integrated circuit structure. The present invention utilizes a high density plasma for sputter deposition of a conductive layer on a patterned substrate, and a pulsed DC power source capacitively coupled to the substrate to generate an ion current at the surface of the substrate. The ion current prevents sticking of the deposited material to the field areas of the patterned substrate, or etches deposited material from the field areas to eliminate crowning or cusping problems associated with deposition of a conductive material in a trench, hole or via formed on the substrate.
摘要翻译：本发明提供了一种用于集成电路结构中优先PVD导体填充的方法和装置。本发明利用高密度等离子体在图案化衬底上溅射沉积导电层，以及电容耦合到衬底的脉冲DC电源，以在衬底的表面产生离子电流。离子电流防止沉积的材料粘附到图案化衬底的场区域，或者蚀刻从场区域沉积的材料，以消除与在衬底上形成的沟槽，孔或通孔中的导电材料的沉积相关的凸起或弯曲问题。

4. 发明授权

US6045666A Aluminum hole filling method using ionized metal adhesion layer 失效
标题翻译：铝孔填充方法采用电离金属粘附层
公开(公告)号：US6045666A
公开(公告)日：2000-04-04
申请号：US977007
申请日：1997-11-24
申请人： Peter Satitpunwaycha , Gongda Yao , Kenny King-Tai Ngan , Zheng Xu
发明人： Peter Satitpunwaycha , Gongda Yao , Kenny King-Tai Ngan , Zheng Xu
IPC分类号： C23C14/00 , C23C14/04 , C23C14/06 , C23C14/14 , C23C14/32 , C23C14/34 , C23C14/35 , C23C14/56 , H01L21/285 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532
CPC分类号： C23C14/0036 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/32 , C23C14/345 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01L21/28518 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76876 , H01L21/76877 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01J2237/32 , H01L2924/0002
摘要： A hole filling process for an integrated circuit in which wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiN.sub.x, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.
摘要翻译：一种用于集成电路的孔填充过程，其中集成电路中的布线电平通过窄孔连接，特别是在下层是硅的情况下。首先，物理气相沉积（PVD）工艺将阻挡三层填充到孔中。阻挡三层包括在高密度等离子体条件下生长的Ti，TiN和分级TiNx的顺序层。此后，在高密度等离子体的条件下沉积第一铝层。然后通过标准PVD技术沉积填充铝层。

5. 发明授权

US06238533B1 Integrated PVD system for aluminum hole filling using ionized metal adhesion layer 失效
标题翻译：使用电离金属粘合层的铝孔填充的集成PVD系统
公开(公告)号：US06238533B1
公开(公告)日：2001-05-29
申请号：US08951990
申请日：1997-10-16
申请人： Peter Satitpunwaycha , Gongda Yao , Kenny King-Tai Ngan , Zheng Xu
发明人： Peter Satitpunwaycha , Gongda Yao , Kenny King-Tai Ngan , Zheng Xu
IPC分类号： C23C1434
CPC分类号： C23C14/0036 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/32 , C23C14/345 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01J2237/32 , H01L21/28518 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76876 , H01L21/76877 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A hole filling process for an integrated circuit in which two wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiNx, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.
摘要翻译：用于集成电路的孔填充处理，其中集成电路中的两个布线电平通过窄孔连接，特别是在下层是硅的情况下。首先，物理气相沉积（PVD）工艺将阻挡三层填充到孔中。阻挡三层包括在高密度等离子体条件下生长的Ti，TiN和分级TiNx的顺序层。此后，在高密度等离子体的条件下沉积第一铝层。然后通过标准PVD技术沉积填充铝层。

6. 发明授权

US6077402A Central coil design for ionized metal plasma deposition 失效
标题翻译：用于电离金属等离子体沉积的中心线圈设计
公开(公告)号：US6077402A
公开(公告)日：2000-06-20
申请号：US857719
申请日：1997-05-16
申请人： Liubo Hong , Hougong Wang , Gongda Yao , Zheng Xu
发明人： Liubo Hong , Hougong Wang , Gongda Yao , Zheng Xu
IPC分类号： H05H1/46 , C23C14/34 , C23C14/40 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/285
CPC分类号： H01J37/321 , H01J37/34 , H01J2237/3323
摘要： In a plasma generating apparatus, a coil is positioned between a target and a workpiece to inductively couple RF energy into a plasma so that the paths of a portion of the ionized deposition material are deflected from the center of the workpiece and toward the edges of the workpiece. As a consequence, it has been found that the uniformity of deposition may be improved. In the illustrated embodiment, the coil is a multi-turn coil formed in a generally planar spiral centered in the stream of deposition material.
摘要翻译：在等离子体发生装置中，线圈位于靶和工件之间，以将RF能量感应耦合到等离子体中，使得电离沉积材料的一部分的路径从工件的中心偏转并且朝向工件的边缘工件。因此，已经发现可以提高沉积的均匀性。在所示实施例中，线圈是形成在沉积材料流中心的大致平面螺旋形的多匝线圈。

7. 发明授权

US09372724B2 System and method for conditional task switching during ordering scope transitions 有权
标题翻译：在订购范围转换期间进行条件任务切换的系统和方法
公开(公告)号：US09372724B2
公开(公告)日：2016-06-21
申请号：US14231789
申请日：2014-04-01
申请人： Zheng Xu , Tommi M. Jokinen , William C. Moyer
发明人： Zheng Xu , Tommi M. Jokinen , William C. Moyer
IPC分类号： G06F9/48
CPC分类号： G06F9/4843 , G06F9/461 , G06F9/48
摘要： A data processing system includes a processor core and a hardware module. The processor core performs tasks on data packets. The hardware module stores a first ordering scope identifier at a first storage location of the ordering scope manager. The first ordering scope identifier indicates a first ordering scope that a first task is operating in. The ordering scope manager increments the first ordering scope identifier to create a new ordering scope identifier. In response to determining that the processor core is authorized to transition the first task from the first ordering scope to a second ordering scope associated with the new ordering scope identifier, the ordering scope manager provides hint information to the processor core. The processor core transitions from the first ordering scope to the second ordering scope without completing a task switch in response to the hint information.
摘要翻译：数据处理系统包括处理器核心和硬件模块。处理器内核在数据包上执行任务。硬件模块在订购范围管理器的第一存储位置处存储第一订购范围标识符。第一个订购范围标识符指示第一个任务正在操作的第一个订购范围。订购范围管理器增加第一个订购范围标识符以创建新的订购范围标识符。响应于确定处理器核被授权将第一任务从第一排序范围转换到与新排序范围标识符相关联的第二排序范围，订购范围管理器向处理器核提供提示信息。处理器核心从第一订购范围转换到第二订购范围，而不响应于提示信息完成任务切换。

8. 发明授权

US08700878B2 Event triggered memory mapped access 有权
标题翻译：事件触发内存映射访问
公开(公告)号：US08700878B2
公开(公告)日：2014-04-15
申请号：US12485190
申请日：2009-06-16
申请人： William D. Schwarz , Joseph P. Gergen , Jason T. Nearing , Zheng Xu
发明人： William D. Schwarz , Joseph P. Gergen , Jason T. Nearing , Zheng Xu
IPC分类号： G06F12/00
CPC分类号： G06F12/0292 , G06F11/3636
摘要： In one or more embodiments, a data processing system can include at least one core capable of executing instructions of an instruction set architecture and a triggered memory map access (tMMA) system coupled to the at least one core. The tMMA system can receive one or more events and, in response, perform one or more actions. For example, the actions can include transactions which can include a write to a an address of the memory map, a read from an address of the memory map, a read followed by write to two respective addresses of the memory map, and/or a fetch transaction. A result of a transaction (e.g., data read, data written, error, etc.) can be used in generating a trace message. For example, the tMMA system can generate a trace message that includes the result of the transaction and send the trace message to a trace message bus.
摘要翻译：在一个或多个实施例中，数据处理系统可以包括能够执行指令集架构的指令的至少一个核心以及耦合到所述至少一个核心的触发的存储器映射访问（tMMA）系统。 tMMA系统可以接收一个或多个事件，并作为响应执行一个或多个动作。例如，动作可以包括可以包括对存储器映射的地址的写入，从存储器映射的地址的读取，随后写入存储器映射的两个相应地址的读取的事务，和/或提取事务。事务的结果（例如，数据读取，数据写入，错误等）可用于生成跟踪消息。例如，tMMA系统可以生成包含事务结果的跟踪消息，并将跟踪消息发送到跟踪消息总线。

9. 发明授权

US08696875B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08696875B2
公开(公告)日：2014-04-15
申请号：US10495506
申请日：2002-11-14
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述腔室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

10. 发明授权

US08588176B2 System and method for performing handover in WiMAX mobile communication system 有权
标题翻译：用于在WiMAX移动通信系统中执行切换的系统和方法
公开(公告)号：US08588176B2
公开(公告)日：2013-11-19
申请号：US12034706
申请日：2008-02-21
申请人： Seong-Taek Hwang , Shuangfeng Han , Chunhui Zhou , Jing Wang , Ming Zhao , Zheng Xu
发明人： Seong-Taek Hwang , Shuangfeng Han , Chunhui Zhou , Jing Wang , Ming Zhao , Zheng Xu
IPC分类号： H04W4/00
CPC分类号： H04W36/06 , H04W88/085
摘要： Disclosed is a system and a method for performing handover in a Worldwide interoperability for Microwave Access (WiMAX) mobile communication system supporting broadband wireless access. The system includes a plurality of Mobile Stations (MSs); at least one distributed antenna having the ability to perform simultaneous communications with the plurality of MSs; and a base station connected to the at least one distributed antenna through optical fibers for performing communications and handovers with the multiple MSs.
摘要翻译：公开了一种在支持宽带无线接入的全球微波接入（WiMAX）移动通信系统互操作性中进行切换的系统和方法。该系统包括多个移动站（MS）; 至少一个具有与所述多个MS同时通信的能力的分布式天线; 以及通过光纤连接到所述至少一个分布式天线的基站，用于执行与所述多个MS的通信和切换。

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