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1. 发明申请

US20120321786A1 SYSTEM FOR MULTI-REGION PROCESSING 有权
标题翻译：多区域处理系统
公开(公告)号：US20120321786A1
公开(公告)日：2012-12-20
申请号：US13162707
申请日：2011-06-17
申请人： Peter Satitpunwaycha , Kent Child
发明人： Peter Satitpunwaycha , Kent Child
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/4408 , C23C16/45519 , C23C16/46 , C23C16/52
摘要： A gas distribution structure for supplying reactant gases and purge gases to independent process cells to deposit thin films on separate regions of a substrate is described. Each process cell has an associated ring purge and exhaust manifold to prevent reactive gases from forming deposits on the surface of the wafer between the isolated regions. Each process cell has an associated showerhead for conveying the reactive gases to the substrate. The showerheads can be independently rotated to simulate the rotation parameter for the deposition process.
摘要翻译：描述了用于将反应气体和吹扫气体供应到独立过程单元以在衬底的分离区域上沉积薄膜的气体分配结构。每个处理单元具有相关联的清洗和排出歧管，以防止反应气体在隔离区域之间在晶片表面上形成沉积物。每个处理单元具有用于将反应性气体输送到基底的相关联的淋浴头。淋浴头可独立旋转以模拟沉积过程的旋转参数。

2. 发明申请

US20090047881A1 COMBINATORIAL PROCESSING INCLUDING ROTATION AND MOVEMENT WITHIN A REGION 有权
标题翻译：组合加工，包括一个地区的旋转和运动
公开(公告)号：US20090047881A1
公开(公告)日：2009-02-19
申请号：US11838653
申请日：2007-08-14
申请人： Peter Satitpunwaycha , Richard Endo , Zachary Fresco , Nitin Kumar
发明人： Peter Satitpunwaycha , Richard Endo , Zachary Fresco , Nitin Kumar
IPC分类号： B24B7/04 , H01L21/461
CPC分类号： H01L21/67046 , B24B37/00 , C25D17/00 , C25D21/12 , H01L21/67051 , H01L21/68764 , H01L21/68785
摘要： Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.
摘要翻译：描述包括区域内的旋转和移动的组合处理，包括限定至少一个基板的多个区域，以组合的方式处理至少一个基板的多个区域，在多个区域中的一个区域中旋转头部以执行处理并且在处理期间旋转头部时，相对于多个区域中的一个重新定位头部。

3. 发明授权

US07128806B2 Mask etch processing apparatus 有权
标题翻译：掩模蚀刻处理装置
公开(公告)号：US07128806B2
公开(公告)日：2006-10-31
申请号：US10689783
申请日：2003-10-21
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred W. Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred W. Mak
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译：提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。在一个方面，提供了一种用于支撑衬底的装置，包括：盖环，包括具有设置在其上的孔的基部，所述基部具有上表面和邻近所述孔设置的一个或多个凸起表面，其中所述凸起表面包括一个或邻近孔的第一衬底支撑构件和设置在盖环上的捕获环，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑构件，其布置在内周边上并且适于接收基底，其中所述捕获环适于与所述盖环配合并在所述盖环上形成一个相邻的凸起表面。

4. 发明授权

US07879151B2 Mask etch processing apparatus 有权
标题翻译：掩模蚀刻处理装置
公开(公告)号：US07879151B2
公开(公告)日：2011-02-01
申请号：US11530676
申请日：2006-09-11
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred W. Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred W. Mak
IPC分类号： C23C16/00 , C23C16/458 , H01L21/306
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译：提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。在一个方面，提供了一种用于支撑衬底的装置，其包括盖环，该盖环包括其上设置有孔的基部，所述基部具有上表面和邻近所述孔布置的一个或多个凸起表面，其中所述凸起表面包括一个或多个第一衬底支撑构件邻近孔的边缘设置，并且捕获环设置在覆盖环上，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑件设置在内周上并适于接收基底的构件，其中捕获环适于与盖环配合并在盖环上形成一个连续的凸起表面。

5. 发明申请

US20070023393A1 INTERFEROMETER ENDPOINT MONITORING DEVICE 有权
标题翻译：干涉仪端点监测装置
公开(公告)号：US20070023393A1
公开(公告)日：2007-02-01
申请号：US11531467
申请日：2006-09-13
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： G03F1/80 , H01J37/321 , H01J37/32935
摘要： A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.
摘要翻译：光掩模蚀刻室，其包括设置在室内的基板支撑构件。衬底支撑构件被配置为支撑光掩模衬底。腔室还包括设置在腔室上的天花板和配置成检测光掩模衬底的周边区域的端点检测系统。

6. 发明申请

US20070017898A1 METHOD AND APPARATUS FOR PHOTOMASK PLASMA ETCHING 审中-公开
标题翻译：用于光电子等离子体蚀刻的方法和装置
公开(公告)号：US20070017898A1
公开(公告)日：2007-01-25
申请号：US11530659
申请日：2006-09-11
申请人： Ajay Kumar , Madhavi Chandrachood , Scott Anderson , Peter Satitpunwaycha , Wai Yau
发明人： Ajay Kumar , Madhavi Chandrachood , Scott Anderson , Peter Satitpunwaycha , Wai Yau
IPC分类号： H01L21/306 , H01L21/302 , C23F1/00 , B44C1/22
CPC分类号： H01J37/32651 , G03F1/80 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32871 , H01J2237/0225
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, a method for etching a photomask includes placing a reticle upon a pedestal of a processing chamber, forming a plasma from a process gas, preferentially allowing neutrally charged radicals to pass through the plate relative to ions present in the plasma and etching a layer disposed on the reticle. In another embodiment, an apparatus for etching a photomask includes a process chamber having a substrate support pedestal disposed therein that is adapted to receive a photomask reticle thereon. An RF power source is provided for forming a plasma within a processing volume of the chamber. A plate having a plurality of holes formed therein is supported in the processing volume in an orientation substantially parallel to and a spaced apart from both the substrate support pedestal and a lid of the processing chamber.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，用于蚀刻光掩模的方法包括将掩模版放置在处理室的基座上，从处理气体形成等离子体，优先地使中性电荷的自由基相对于存在于等离子体中的离子通过板，并蚀刻层设置在掩模版上。在另一个实施例中，用于蚀刻光掩模的设备包括处理室，其具有设置在其中的基板支撑基座，其适于在其上接收光掩模掩模版。提供RF电源用于在腔室的处理容积内形成等离子体。其中形成有多个孔的板以与基板支撑基座和处理室的盖基本上平行并间隔开的取向被支撑在处理空间中。

7. 发明授权

US08709270B2 Masking method and apparatus 有权
标题翻译：掩蔽方法和装置
公开(公告)号：US08709270B2
公开(公告)日：2014-04-29
申请号：US13324818
申请日：2011-12-13
申请人： Peter Satitpunwaycha
发明人： Peter Satitpunwaycha
IPC分类号： H01J37/32 , H01L21/31 , H01L21/311
CPC分类号： H01J37/32623 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00756 , C23C14/042 , C23C14/351 , C23C14/352 , C40B60/14 , H01J37/321 , H01L21/31116
摘要： A chamber for combinatorially processing a substrate is provided. The chamber includes a first mask and a second mask that share a common central axis. The first mask and the second mask are independently rotatable around the common central axis. The first mask has a first plurality of radial apertures and the second mask has a second plurality of radial apertures. An axis of the first plurality of radial apertures is offset from an axis of the second plurality of radial apertures. A substrate support that is operable to support a substrate below the first and second masks is included. The substrate support shares the common central axis.
摘要翻译：提供了用于组合处理衬底的腔室。腔室包括共享公共中心轴的第一掩模和第二掩模。第一掩模和第二掩模可以围绕公共中心轴独立地旋转。第一掩模具有第一多个径向孔，并且第二掩模具有第二多个径向孔。第一多个径向孔的轴线偏离第二多个径向孔的轴线。包括可操作以支撑第一和第二掩模下面的衬底的衬底支撑件。基板支架共用共同的中心轴。

8. 发明申请

US20130149868A1 Masking Method and Apparatus 有权
标题翻译：掩蔽方法和装置
公开(公告)号：US20130149868A1
公开(公告)日：2013-06-13
申请号：US13324818
申请日：2011-12-13
申请人： Peter Satitpunwaycha
发明人： Peter Satitpunwaycha
IPC分类号： H01L21/3065 , C23F1/08 , C23C16/04 , H01L21/30
CPC分类号： H01J37/32623 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00756 , C23C14/042 , C23C14/351 , C23C14/352 , C40B60/14 , H01J37/321 , H01L21/31116
摘要： A chamber for combinatorially processing a substrate is provided. The chamber includes a first mask and a second mask that share a common central axis. The first mask and the second mask are independently rotatable around the common central axis. The first mask has a first plurality of radial apertures and the second mask has a second plurality of radial apertures. An axis of the first plurality of radial apertures is offset from an axis of the second plurality of radial apertures. A substrate support that is operable to support a substrate below the first and second masks is included. The substrate support shares the common central axis.
摘要翻译：提供了用于组合处理衬底的腔室。腔室包括共享公共中心轴的第一掩模和第二掩模。第一掩模和第二掩模可以围绕公共中心轴独立地旋转。第一掩模具有第一多个径向孔，并且第二掩模具有第二多个径向孔。第一多个径向孔的轴线偏离第二多个径向孔的轴线。包括可操作以支撑第一和第二掩模下面的衬底的衬底支撑件。基板支架共用共同的中心轴。

9. 发明申请

US20070007660A1 MASK ETCH PROCESSING APPARATUS 有权
标题翻译：掩模加工设备
公开(公告)号：US20070007660A1
公开(公告)日：2007-01-11
申请号：US11530676
申请日：2006-09-11
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
IPC分类号： H01L23/52
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译：提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。在一个方面，提供了一种用于支撑衬底的装置，其包括盖环，该盖环包括其上设置有孔的基部，所述基部具有上表面和邻近所述孔布置的一个或多个凸起表面，其中所述凸起表面包括一个或多个第一衬底支撑构件邻近孔的边缘设置，并且捕获环设置在覆盖环上，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑件设置在内周上并适于接收基底的构件，其中捕获环适于与盖环配合并在盖环上形成一个连续的凸起表面。

10. 发明申请

US20050082007A1 Mask etch processing apparatus 有权
标题翻译：掩模蚀刻处理装置
公开(公告)号：US20050082007A1
公开(公告)日：2005-04-21
申请号：US10689783
申请日：2003-10-21
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
IPC分类号： H01J37/32 , H01L21/687 , H01L21/44
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译：提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。在一个方面，提供了一种用于支撑衬底的装置，包括：盖环，包括具有设置在其上的孔的基部，所述基部具有上表面和邻近所述孔设置的一个或多个凸起表面，其中所述凸起表面包括一个或邻近孔的第一衬底支撑构件和设置在盖环上的捕获环，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑构件，其布置在内周边上并且适于接收基底，其中所述捕获环适于与所述盖环配合并在所述盖环上形成一个相邻的凸起表面。

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