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1. 发明授权

US08668816B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08668816B2
公开(公告)日：2014-03-11
申请号：US11933157
申请日：2007-10-31
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
摘要翻译：用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者交替地，在相同或不同的室中。此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。辅助磁体可以是永磁体或电磁体。

2. 发明授权

US07749361B2 Multi-component doping of copper seed layer 有权
标题翻译：铜种子层的多组分掺杂
公开(公告)号：US07749361B2
公开(公告)日：2010-07-06
申请号：US11445690
申请日：2006-06-02
申请人： Jie Chen , Peijun Ding , Suraj Rengarajan , Ling Chen , Tram Vo
发明人： Jie Chen , Peijun Ding , Suraj Rengarajan , Ling Chen , Tram Vo
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C23C14/046 , C23C14/165
摘要： A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.
摘要翻译：一种溅射铜籽晶层的方法及其使用的靶。包括在溅射靶中的铜包括与铜反应的第一掺杂物和不与铜反应的第二掺杂物。第一掺杂剂的实例包括Ti，Mg和Al。第二掺杂剂的实例包括Pd，Sn，In，Ir和Ag。可以通过测试电迁移来测试应力迁移和第二掺杂剂的量来确定第一掺杂剂的量。

3. 发明授权

US07687909B2 Metal / metal nitride barrier layer for semiconductor device applications 失效
标题翻译：用于半导体器件应用的金属/金属氮化物阻挡层
公开(公告)号：US07687909B2
公开(公告)日：2010-03-30
申请号：US11809153
申请日：2007-05-30
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
IPC分类号： H01L23/48
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.
摘要翻译：用于半导体器件应用的金属/金属氮化物阻挡层。阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

4. 发明申请

US20070278089A1 Multi-component doping of copper seed layer 有权
标题翻译：铜种子层的多组分掺杂
公开(公告)号：US20070278089A1
公开(公告)日：2007-12-06
申请号：US11445690
申请日：2006-06-02
申请人： Jie Chen , Peijun Ding , Suraj Rengarajan , Ling Chen , Tram Vo
发明人： Jie Chen , Peijun Ding , Suraj Rengarajan , Ling Chen , Tram Vo
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/3414 , C23C14/046 , C23C14/165
摘要： A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.
摘要翻译：一种溅射铜籽晶层的方法及其使用的靶。包括在溅射靶中的铜包括与铜反应的第一掺杂物和不与铜反应的第二掺杂物。第一掺杂剂的实例包括Ti，Mg和Al。第二掺杂剂的实例包括Pd，Sn，In，Ir和Ag。可以通过测试电迁移来测试应力迁移和第二掺杂剂的量来确定第一掺杂剂的量。

5. 发明授权

US07253109B2 Method of depositing a tantalum nitride/tantalum diffusion barrier layer system 失效
标题翻译：沉积氮化钽/钽扩散阻挡层体系的方法
公开(公告)号：US07253109B2
公开(公告)日：2007-08-07
申请号：US11069348
申请日：2005-02-28
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
IPC分类号： H01L21/44
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
摘要翻译：我们已经发现了一种提供大约从大约2埃到大约100埃的Ta N种子层的薄的方法，其可以在钽沉积在Ta上时用于诱导形成α钽 N种子层。此外，Ta N N种子层在30微米范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。在该方法的一个实施方案中，在其表面上改变TaN膜以形成Ta N N种子层。在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

6. 发明申请

US20050255691A1 Self-ionized and inductively-coupled plasma for sputtering and resputtering 审中-公开
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US20050255691A1
公开(公告)日：2005-11-17
申请号：US11184615
申请日：2005-07-19
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/04 , C23C14/34 , C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/4763 , H01L21/768
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
摘要翻译：用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者交替地，在相同或不同的室中。此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。辅助磁体可以是永磁体或电磁体。

7. 发明申请

US20050208767A1 Method of depositing a tantalum nitride / tantalum diffusion barrier layer system 失效
标题翻译：沉积氮化钽/钽扩散阻挡层体系的方法
公开(公告)号：US20050208767A1
公开(公告)日：2005-09-22
申请号：US11069348
申请日：2005-02-28
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
IPC分类号： C23C14/06 , C23C14/16 , C23C14/32 , H01L21/285 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
摘要翻译：我们已经发现了一种提供大约从大约2埃到大约100埃的Ta N种子层的薄的方法，其可以在钽沉积在Ta上时用于诱导形成α钽 N种子层。此外，Ta N N种子层在30微米范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。在该方法的一个实施方案中，在其表面上改变TaN膜以形成Ta N N种子层。在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

8. 发明授权

US06911124B2 Method of depositing a TaN seed layer 有权
标题翻译：沉积TaN种子层的方法
公开(公告)号：US06911124B2
公开(公告)日：2005-06-28
申请号：US10246316
申请日：2002-09-17
申请人： Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Peijun Ding
发明人： Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Peijun Ding
IPC分类号： C23C14/06 , C23C14/16 , C23C14/54 , C23C14/58 , H01L21/285 , H01L21/318 , H01L21/768 , C23C14/34 , H05H1/24
CPC分类号： H01L21/2855 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876
摘要： We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩ m and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
摘要翻译：我们已经发现了一种提供约大约至大约厚厚的Ta N种子层的薄膜的方法，当钽沉积在Ta上时可用于诱导形成α钽， SUB> N 种子层。此外，Ta N N种子层在30μm范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。在该方法的一个实施方案中，TaN膜在其表面上形成Ta N N种子层。在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

9. 发明授权

US06346489B1 Precleaning process for metal plug that minimizes damage to low-&kgr; dielectric 有权
标题翻译：金属插塞的预清洗工艺可最大限度地降低对低kappa电介质的损伤
公开(公告)号：US06346489B1
公开(公告)日：2002-02-12
申请号：US09388991
申请日：1999-09-02
申请人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
发明人： Barney M. Cohen , Suraj Rengarajan , Kenny King-Tai Ngan
IPC分类号： H01L21469
CPC分类号： H01L21/02063 , H01L21/3105 , H01L21/76814
摘要： The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.
摘要翻译：本发明是适用于制造低κ，含碳电介质中的金属塞的预清洗方法。更具体地，本发明是一种用于清洁半导体工件上的金属导体的接触面积的方法，以便使对覆盖金属的低κ，含碳电介质的损伤最小化。在低k电介质中形成接触开口以暴露下面的金属导体上的接触区域之后，通过将工件暴露于由含氢和氦气的混合物的等离子体分解形成的气氛中来清洁接触区域。令人惊讶的是，我们的预清洗工艺可以修复由先前的工艺步骤引起的介电损坏，例如用于除去光致抗蚀剂的氧等离子体灰化处理。

10. 发明授权

US06313033B1 Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applications 失效
标题翻译：用于栅电极应用的离子化金属等离子体Ta，TaNx，W和WNx衬垫
公开(公告)号：US06313033B1
公开(公告)日：2001-11-06
申请号：US09362923
申请日：1999-07-27
申请人： Tony Chiang , Bingxi Sun , Suraj Rengarajan , Peijun Ding , Barry Chin
发明人： Tony Chiang , Bingxi Sun , Suraj Rengarajan , Peijun Ding , Barry Chin
IPC分类号： H01L2144
CPC分类号： H01L27/1087 , H01L21/2855 , H01L21/76843 , H01L28/40 , H01L28/56 , H01L28/75
摘要： The invention provides a method for forming a microelectronic device comprising: forming a first electrode; depositing an adhesion layer over the first electrode utilizing high density plasma physical vapor deposition, wherein the adhesion layer comprises a material selected from Ta, TaNx, W, WNx, Ta/TaNx, W/WNx, and combinations thereof, depositing a dielectric layer over the adhesion layer; and forming a second electrode over the dielectric layer. The invention also provides a microelectronic device comprising: a first electrode; a second electrode; a dielectric layer disposed between the first and second electrodes; and an adhesion layer disposed between the first electrode and the dielectric layer, wherein the adhesion layer comprises a material selected from Ta, TaNx, W, WNx, Ta/TaNx, W/WNx, and combinations thereof.
摘要翻译：本发明提供一种形成微电子器件的方法，包括：形成第一电极; 使用高密度等离子体物理气相沉积在第一电极上沉积粘合层，其中粘合层包括选自Ta，TaNx，W，WNx，Ta / TaNx，W / WNx的材料及其组合，将介电层沉积在粘合层; 以及在所述电介质层上形成第二电极。本发明还提供了一种微电子器件，包括：第一电极; 第二电极; 设置在所述第一和第二电极之间的电介质层; 以及设置在第一电极和电介质层之间的粘合层，其中粘合层包括选自Ta，TaNx，W，WNx，Ta / TaNx，W / WNx的材料及其组合。

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