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1. 发明授权

US6077402A Central coil design for ionized metal plasma deposition 失效
标题翻译：用于电离金属等离子体沉积的中心线圈设计
公开(公告)号：US6077402A
公开(公告)日：2000-06-20
申请号：US857719
申请日：1997-05-16
申请人： Liubo Hong , Hougong Wang , Gongda Yao , Zheng Xu
发明人： Liubo Hong , Hougong Wang , Gongda Yao , Zheng Xu
IPC分类号： H05H1/46 , C23C14/34 , C23C14/40 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/285
CPC分类号： H01J37/321 , H01J37/34 , H01J2237/3323
摘要： In a plasma generating apparatus, a coil is positioned between a target and a workpiece to inductively couple RF energy into a plasma so that the paths of a portion of the ionized deposition material are deflected from the center of the workpiece and toward the edges of the workpiece. As a consequence, it has been found that the uniformity of deposition may be improved. In the illustrated embodiment, the coil is a multi-turn coil formed in a generally planar spiral centered in the stream of deposition material.
摘要翻译：在等离子体发生装置中，线圈位于靶和工件之间，以将RF能量感应耦合到等离子体中，使得电离沉积材料的一部分的路径从工件的中心偏转并且朝向工件的边缘工件。因此，已经发现可以提高沉积的均匀性。在所示实施例中，线圈是形成在沉积材料流中心的大致平面螺旋形的多匝线圈。

2. 发明授权

US06299689B1 Reflow chamber and process 失效
标题翻译：回流室和工艺
公开(公告)号：US06299689B1
公开(公告)日：2001-10-09
申请号：US09524239
申请日：2000-03-13
申请人： Hougong Wang , Steve Lai , Gongda Yao , Peijun Ding
发明人： Hougong Wang , Steve Lai , Gongda Yao , Peijun Ding
IPC分类号： B05C1300
CPC分类号： H01L21/76877 , C23C16/4404 , Y10T24/44017
摘要： A method and apparatus for reflowing a material layer is provided. The inventive method introduces into a reflow chamber a material which is at least as reactive or more reactive than a material to be reflowed (i.e., a gettering material). Preferably the gettering material is sputter deposited within the reflow chamber while a shield prevents the gettering material from reaching the material layer to be reflowed. The shield may be coupled to, or integral with a clamp for clamping a wafer (containing the material layer to be reflowed) to a wafer support provided sufficient venting exists so that contaminants degassed from the wafer may flow to the region between the sputtering target and the shield where the contaminants can react with gettering material. The shield may have a roughened top surface (the surface that faces the sputtering target) which deters gettering material from flaking off the shield and/or the shield may have a reflective bottom surface (the surface that faces the wafer) that reflects heat to the wafer.
摘要翻译：提供了用于回流材料层的方法和装置。本发明的方法将至少与被回流的材料（即吸气材料）反应性或反应性至少反应的材料引入回流室。优选地，吸气材料被溅射沉积在回流室内，而屏蔽件防止吸气材料到达要回流的材料层。屏蔽可以耦合到或与夹具一体地夹持晶片（包含待回流的材料层）到晶片支架，提供足够的通风，使得从晶片脱气的污染物可以流到溅射靶和溅射靶之间的区域污染物可与吸气材料反应的护罩。屏蔽可以具有粗糙的顶表面（面向溅射靶的表面），其阻止吸气材料从屏蔽层剥离和/或屏蔽件可以具有反射底部表面（面向晶片的表面），其将热量反射到晶圆。

3. 发明授权

US06303994B1 Method and apparatus for reducing the first wafer effect 失效
标题翻译：降低第一晶片效应的方法和装置
公开(公告)号：US06303994B1
公开(公告)日：2001-10-16
申请号：US09592803
申请日：2000-06-13
申请人： Hougong Wang , Gongda Yao
发明人： Hougong Wang , Gongda Yao
IPC分类号： H01L2348
CPC分类号： H01L21/02 , H01L21/768
摘要： A method and apparatus are provided for reducing and eliminating the First Wafer Effect. Specifically, in a method, or system that employs a separate hot chamber for hot deposition of material that may result in the First Wafer Effect (FWE material), a cold layer of the FWE material is deposited within the hot deposition chamber prior to deposition of the hot FWE material layer.
摘要翻译：提供了一种减少和消除第一晶片效应的方法和装置。具体地说，在使用可能导致第一晶片效应（FWE材料）的材料的热沉积的单独的热室的方法或系统中，FWE材料的冷层在沉积之前沉积在热沉积室内热FWE材料层。

4. 发明授权

US6077404A Reflow chamber and process 失效
标题翻译：回流室和工艺
公开(公告)号：US6077404A
公开(公告)日：2000-06-20
申请号：US24530
申请日：1998-02-17
申请人： Hougong Wang , Steve Lai , Gongda Yao , Peijun Ding
发明人： Hougong Wang , Steve Lai , Gongda Yao , Peijun Ding
IPC分类号： H01L21/3205 , C23C16/44 , H01L21/768 , C23C14/34
CPC分类号： H01L21/76877 , C23C16/4404 , Y10T24/44017
摘要： A method and apparatus for reflowing a material layer is provided. The inventive method introduces into a reflow chamber a material which is at least as reactive or more reactive than a material to be reflowed (i.e., a gettering material). Preferably the gettering material is sputter deposited within the reflow chamber while a shield prevents the gettering material from reaching the material layer to be reflowed. The shield may be coupled to, or integral with a clamp for clamping a wafer (containing the material layer to be reflowed) to a wafer support provided sufficient venting exists so that contaminants degassed from the wafer may flow to the region between the sputtering target and the shield where the contaminants can react with gettering material. The shield may have a roughened top surface (the surface that faces the sputtering target) which deters gettering material from flaking off the shield and/or the shield may have a reflective bottom surface (the surface that faces the wafer) that reflects heat to the wafer.
摘要翻译：提供了用于回流材料层的方法和装置。本发明的方法将至少与被回流的材料（即吸气材料）反应性或反应性至少反应的材料引入回流室。优选地，吸气材料被溅射沉积在回流室内，而屏蔽件防止吸气材料到达要回流的材料层。屏蔽可以耦合到或与夹具一体地夹持晶片（包含待回流的材料层）到晶片支架，提供足够的通风，使得从晶片脱气的污染物可以流到溅射靶和溅射靶之间的区域污染物可与吸气材料反应的护罩。屏蔽可以具有粗糙的顶表面（面向溅射靶的表面），其阻止吸气材料从屏蔽层剥离和/或屏蔽件可以具有反射底部表面（面向晶片的表面），其将热量反射到晶圆。

5. 发明授权

US6139698A Method and apparatus for reducing the first wafer effect 失效
标题翻译：降低第一晶片效应的方法和装置
公开(公告)号：US6139698A
公开(公告)日：2000-10-31
申请号：US794033
申请日：1997-02-03
申请人： Hougong Wang , Gongda Yao
发明人： Hougong Wang , Gongda Yao
IPC分类号： H01L21/285 , H01L21/02 , H01L21/203 , H01L21/3205 , H01L21/768 , C23C14/34
CPC分类号： H01L21/02 , H01L21/768
摘要： A method and apparatus are provided for reducing and eliminating the First Wafer Effect. Specifically, in a method, or system that employs a separate hot chamber for hot deposition of material that may result in the First Wafer Effect (FWE material), a cold layer of the FWE material is deposited within the hot deposition chamber prior to deposition of the hot FWE material layer.
摘要翻译：提供了一种用于减少和消除第一晶片效应的方法和装置。具体地说，在使用可能导致第一晶片效应（FWE材料）的材料的热沉积的单独的热室的方法或系统中，FWE材料的冷层在沉积之前沉积在热沉积室内热FWE材料层。

6. 发明授权

US07006888B2 Semiconductor wafer preheating 失效
公开(公告)号：US07006888B2
公开(公告)日：2006-02-28
申请号：US10046954
申请日：2002-01-14
申请人： Hougong Wang , Kenny King-Tai Ngan , Zheng Xu
发明人： Hougong Wang , Kenny King-Tai Ngan , Zheng Xu
IPC分类号： G06F19/00
CPC分类号： H01L21/67184 , H01L21/67201 , H01L21/67745 , Y10T29/41
摘要： Embodiments of the present invention provide a method, article of manufacture, and apparatus for processing semiconductor wafers. The method includes preheating a semiconductor wafer in two types of chambers. In one embodiment, a first preheating chamber is a load lock and a second preheating chamber is a transition chamber. Semiconductor wafer processing systems which can perform embodiments of the method are presented.

7. 发明授权

US06672864B2 Method and apparatus for processing substrates in a system having high and low pressure areas 失效
标题翻译：在具有高低压区域的系统中处理衬底的方法和装置
公开(公告)号：US06672864B2
公开(公告)日：2004-01-06
申请号：US10229879
申请日：2002-08-27
申请人： Hougong Wang , Zheng Xu , Kenny King-Tai Ngan
发明人： Hougong Wang , Zheng Xu , Kenny King-Tai Ngan
IPC分类号： F27D316
CPC分类号： H01L21/67748 , H01L21/67017 , H01L21/67201
摘要： A positive pressure gradient is maintained across an open access port of an interface chamber such as a load lock chamber which provides an interface between a low pressure chamber such as a transfer or buffer chamber, and a high pressure area such as a staging area or factory interface area. When the access port of the interface chamber is open to the high-pressure area, the positive pressure gradient may be used in some applications to inhibit the flow of gasses from the high-pressure area into the interior of the interface chamber.
摘要翻译：在诸如负载锁定室的接口室的开放进入口处保持正压力梯度，该负载锁定室提供诸如转移或缓冲室的低压室与高压区域（例如分段区域或工厂界面区域。当接口室的进入口对高压区域开放时，在某些应用中可以使用正压梯度来抑制气体从高压区域流入界面室的内部。

8. 发明授权

US10287686B2 Hot plate and substrate processing equipment using the same 有权
公开(公告)号：US10287686B2
公开(公告)日：2019-05-14
申请号：US13992165
申请日：2011-11-23
申请人： Mengxin Zhao , Xu Liu , Peijun Ding , Hougong Wang , Wei Xia , Lihui Wen
发明人： Mengxin Zhao , Xu Liu , Peijun Ding , Hougong Wang , Wei Xia , Lihui Wen
IPC分类号： C23C16/44 , C23C16/46 , H01L21/67 , C23C14/02
摘要： The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.

9. 发明申请

US20080116067A1 PHYSICAL VAPOR DEPOSITION CHAMBER HAVING AN ADJUSTABLE TARGET 审中-公开
标题翻译：具有可调节目标的物理蒸气沉积室
公开(公告)号：US20080116067A1
公开(公告)日：2008-05-22
申请号：US11950881
申请日：2007-12-05
申请人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
发明人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
IPC分类号： C23C14/34
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/352 , C23C14/564 , H01J37/32568 , H01J37/32733 , H01J37/3455
摘要： The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal and at least one moveable tilted target. Embodiments of the invention facilitate deposition of highly uniform thin films.
摘要翻译：本发明涉及具有可旋转衬底基座和至少一个可移动倾斜目标的物理气相沉积（PVD）室。本发明的实施方案有利于沉积高度均匀的薄膜。

10. 发明申请

US20060096857A1 Physical vapor deposition chamber having a rotatable substrate pedestal 审中-公开
标题翻译：物理气相沉积室具有可旋转的基板基座
公开(公告)号：US20060096857A1
公开(公告)日：2006-05-11
申请号：US10984265
申请日：2004-11-08
申请人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
发明人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/352 , C23C14/564 , H01J37/32568 , H01J37/32733 , H01J37/3455
摘要： The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal. Embodiments of the invention facilitate deposition of highly uniform thin films. In further embodiments, one or more sputtering targets are movably disposed above the pedestal. The orientation of the targets relative to the pedestal may be adjusted laterally, vertically or angularly. In one embodiment, the target may be adjusted between angles of about 0 to 45 degreees relative to an axis of pedestal rotation.
摘要翻译：本发明涉及具有可转动的基板底座的物理气相沉积（PVD）室。本发明的实施方案有利于沉积高度均匀的薄膜。在另外的实施例中，一个或多个溅射靶可移动地设置在基座上方。目标相对于基座的取向可以横向，垂直或有角度地调整。在一个实施例中，可以相对于基座旋转轴线在约0至45度的角度之间调整目标。

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