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    • 1. 发明授权
    • Method for pulling single crystal
    • 单晶拉丝方法
    • US06755910B2
    • 2004-06-29
    • US10230987
    • 2002-08-30
    • Hiroshi MoritaHideki Watanabe
    • Hiroshi MoritaHideki Watanabe
    • C30B1520
    • C30B29/06C30B15/14C30B15/203Y10T117/1032Y10T117/1068Y10T117/1072Y10T117/1088
    • A method capable of securely pulling up a heavy single crystal is described. Using an apparatus comprising a crucible for storing a molten material for a single crystal; a heater for heating the molten material; means for pulling up the single crystal to grow by bringing a seed crystal in contact with the surface of the molten material in the crucible; and a flow-regulating member surrounding the single crystal at the growth area for shielding the heat of radiation and for regulating inert gas flow, the method comprises the following steps of setting the distance between the lower end of the flow-regulating member and the surface of the molten material to be a first distance D1 when the seed crystal comes into contact with the surface of the molten material in said crucible; forming the single crystal at the neck portion; thereafter setting the distance between the lower end of the flow-regulating member and the surface of the molten material to be a second distance D2 where D1 (mm)>D2 (mm); and forming the single crystal at the shoulder portion and subsequently forming the single crystal at the body portion. A dislocation-free single crystal having a heavy weight can be produced with a high crystal quality, and the method is applicable to various operation modes at which the apparatus is operated under various conditions of crystal growth.
    • 描述了能够牢固地拉起重单晶的方法。 使用包括用于存储用于单晶的熔融材料的坩埚的装置; 用于加热熔融材料的加热器; 通过使晶种与坩埚中的熔融材料的表面接触来拉高单晶生长的装置; 以及围绕生长区域的单晶的流动调节构件,用于屏蔽辐射热并调节惰性气体流动,该方法包括以下步骤:设置流量调节构件的下端与表面之间的距离 当所述晶种与所述坩埚中的熔融材料的表面接触时,所述熔融材料为第一距离D1; 在颈部形成单晶; 然后将流量调节构件的下端与熔融材料的表面之间的距离设定为D1(mm)> D2(mm)的第二距离D2; 并在肩部形成单晶,随后在体部形成单晶。 可以制造具有高重量的无位错的单晶,具有高的晶体质量,并且该方法适用于在各种晶体生长条件下操作该装置的各种操作模式。
    • 2. 发明授权
    • Method and apparatus for pulling a single crystal
    • 用于拉出单晶的方法和装置
    • US06348095B1
    • 2002-02-19
    • US09570914
    • 2000-05-15
    • Hideki WatanabeHiroshi Morita
    • Hideki WatanabeHiroshi Morita
    • C30B1520
    • C30B29/06C30B15/14C30B15/22Y10T117/1008Y10T117/1068Y10T117/1072
    • The present invention was achieved in order to provide a method for pulling a single crystal, wherein a single crystal hanging portion makes it possible to pull even a heavy single crystal safely, a new cost related to a seed crystal is not caused by the use of a general and usual seed crystal, the time required for the process can be shortened by making the single crystal hanging portion dislocation-free at a high speed, and even a seed crystal containing a few dislocations can be made dislocation-free, so that a seed crystal to which a few dislocations were induced can be reused without replacement, and an apparatus for pulling a single crystal. The method for pulling a single crystal wherein a single crystal is grown by pulling a seed crystal after dipping the seed crystal into a melt within a crucible, comprises bringing the seed crystal into contact with the melt, further dipping the seed crystal into the melt while the vicinity of the interface between the seed crystal and the melt is heated using an auxiliary heating means, stopping the heating with the auxiliary heating means, and pulling a single crystal without forming a neck.
    • 本发明是为了提供一种拉制单晶的方法而实现的,其中单晶悬挂部分使得可以安全地拉出重的单晶,与晶种有关的新成本不是由于使用 一般和通常的晶种,通过使单晶悬挂部分高速无位错,可以缩短处理所需的时间,甚至可以使含有少量位错的晶种无错位,从而使 引起少量位错的晶种可以重复使用而不需要更换,以及用于拉出单晶的装置。 拉晶单晶的方法,其中在将晶种浸入坩埚内的熔体中之后通过拉晶晶来生长单晶,包括使晶种与熔体接触,进一步将晶种浸入熔体中,同时 使用辅助加热装置加热籽晶和熔体之间的界面附近,用辅助加热装置停止加热,并且拉制单晶而不形成颈部。
    • 3. 发明授权
    • Television and electronic device
    • 电视和电子设备
    • US09148713B2
    • 2015-09-29
    • US13489648
    • 2012-06-06
    • Tomofumi MiyamotoHideki Watanabe
    • Tomofumi MiyamotoHideki Watanabe
    • H04R1/02H04R5/02
    • H04R1/02H04R1/025
    • According to at least one embodiment, a television includes a housing further including a pair of corner portions and an enclosed space on an inner side thereof, a pair of speaker boxes housed in the enclosed space in vicinities of the corner portions, a pair of speakers housed in the speaker boxes respectively in a direction which crosses a thickness direction of the housing, and each of the speaker boxes further includes a first duct to guide sounds from a first side of the respective speaker to the respective first opening portion and a second duct to guide sounds from a second side of the respective speaker towards the enclosed space.
    • 根据至少一个实施例,电视机包括还包括一对角部和在其内侧上的封闭空间的壳体,一对容纳在角部附近的封闭空间中的扬声器箱,一对扬声器 分别沿着与壳体的厚度方向交叉的方向容纳在扬声器箱中,并且每个扬声器盒还包括第一导管,用于将声音从相应扬声器的第一侧引导到相应的第一开口部分,第二导管 以将声音从相应扬声器的第二侧引向封闭空间。
    • 6. 发明授权
    • Mode-locked semiconductor laser device and driving method thereof
    • 锁模半导体激光器件及其驱动方法
    • US08442079B2
    • 2013-05-14
    • US13035540
    • 2011-02-25
    • Tomoyuki OkiMasaru KuramotoMasao IkedaTakao MiyajimaHideki WatanabeHiroyuki Yokoyama
    • Tomoyuki OkiMasaru KuramotoMasao IkedaTakao MiyajimaHideki WatanabeHiroyuki Yokoyama
    • H01S3/098
    • Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
    • 提供了一种锁模半导体激光器件的驱动方法,其包括层叠结构,其中第一化合物半导体层,具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压,第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上,第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极,在发射区域中产生光脉冲。