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1. 发明申请

US20120111373A1 SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING APPARATUS AND STORAGE MEDIUM FOR SUBSTRATE CLEANING 审中-公开
标题翻译：基板清洗方法，基板清洗装置和基板清洗存储介质
公开(公告)号：US20120111373A1
公开(公告)日：2012-05-10
申请号：US13288255
申请日：2011-11-03
申请人： Hiroshi ARIMA , Yuichi YOSHIDA , Kousuke YOSHIHARA
发明人： Hiroshi ARIMA , Yuichi YOSHIDA , Kousuke YOSHIHARA
IPC分类号： B08B7/00 , B08B5/00 , B08B3/04
CPC分类号： G03F7/422 , H01L21/67051
摘要： A method for cleaning a surface of a substrate having a circuit pattern formed thereon, includes: forming a liquid film on the surface by feeding a cleaning solution onto the center of the surface while rotating the substrate with the substrate kept horizontal; forming a dry region by discharging gas to the center while moving a position of feed of the cleaning solution on the surface by a distance from the center toward the periphery of the substrate with the substrate being rotated; moving the position of feed of the cleaning solution on the surface toward the periphery at a speed equal to a speed at which the dry region is expanded toward the periphery while rotating the substrate; and controlling temperature of the cleaning solution to form the liquid film such that the temperature becomes higher than process atmosphere temperature on the surface during feed of the cleaning solution.
摘要翻译：一种用于清洗其上形成有电路图案的基板的表面的方法，包括：通过在将基板保持水平的同时旋转基板的同时将清洁溶液馈送到表面的中心而在表面上形成液膜; 通过在基板旋转的同时将清洁溶液的进料位置从基板的中心向外周移动到表面上的方式将气体排出到中心而形成干燥区域; 在旋转基板的同时，以与干燥区域朝向周边膨胀的速度相等的速度将清洁溶液的表面朝向周边移动的位置; 以及控制清洁溶液的温度以形成液膜，使得在清洁溶液的进料期间温度变得高于表面上的处理气氛温度。

2. 发明申请

US20110200953A1 DEVELOPING APPARATUS, DEVELOPING METHOD AND STORAGE MEDIUM 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：US20110200953A1
公开(公告)日：2011-08-18
申请号：US13025490
申请日：2011-02-11
申请人： Hiroshi ARIMA , Kousuke YOSHIHARA , Yuichi YOSHIDA , Yasushi TAKIGUCHI , Taro YAMAMOTO
发明人： Hiroshi ARIMA , Kousuke YOSHIHARA , Yuichi YOSHIDA , Yasushi TAKIGUCHI , Taro YAMAMOTO
IPC分类号： G03F7/30 , G03B27/52
CPC分类号： G03F7/3021
摘要： There is provided a developing apparatus capable of achieving high throughput. The developing apparatus includes an airtightly sealed processing vessel that forms a processing atmosphere therein; an atmosphere gas supply unit that supplies an atmosphere gas containing mist of a developing solution into the processing vessel in order to form a liquid film of the developing solution on a surface of a substrate loaded into the processing vessel; and a drying unit that dries the substrate in order to stop a developing process by the liquid film. A reaction between a resist and the developing solution can be stopped. Therefore, a developing process can be performed in parallel with a cleaning process performed by a cleaning module and high throughput is achieved.
摘要翻译：提供了能够实现高产量的显影装置。显影装置包括在其中形成处理气氛的气密密封处理容器; 气氛气体供给单元，其将含有显影液雾的气氛气体供给到处理容器中，以在装载到处理容器中的基板的表面上形成显影液的液膜; 以及干燥单元，其干燥基板以便通过液膜来停止显影处理。可以停止抗蚀剂与显影液的反应。因此，可以与由清洁模块执行的清洁处理并行执行显影处理，并且实现高生产率。

3. 发明申请

US20100233638A1 SUBSTRATE TREATMENT APPARATUS, SUBSTRATE TREATMENT METHOD, COATING AND DEVELOPING APPARATUS, COATING AND DEVELOPING METHOD, AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理设备，基板处理方法，涂装和开发设备，涂装和开发方法以及存储介质
公开(公告)号：US20100233638A1
公开(公告)日：2010-09-16
申请号：US12720072
申请日：2010-03-09
申请人： Yuichi YOSHIDA , Hiroshi ARIMA , Taro YAMAMOTO , Kousuke YOSHIHARA
发明人： Yuichi YOSHIDA , Hiroshi ARIMA , Taro YAMAMOTO , Kousuke YOSHIHARA
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： H01L21/67748 , H01L21/67109 , H01L21/6715
摘要： The substrate treatment apparatus includes a heating plate that heats the substrate prepared by coating a surface of the substrate with a resist and exposing the resist-coated substrate to light; a surface treatment liquid atomizing unit that atomizes a surface treatment liquid used to improve wettability of the substrate with a developer that is supplied onto the resist; a cooling unit that cools the substrate heated by the heating plate; and a surface treatment liquid supply unit that supplies the atomized surface treatment liquid onto the substrate for a portion of the period from the time when the substrate is heated until the cooling means terminates the cooling of the substrate.
摘要翻译：基板处理装置包括加热板，其加热通过用抗蚀剂涂布基板的表面而制备的基板，并将抗蚀剂涂覆的基板曝光; 表面处理液体雾化单元，其用提供给抗蚀剂的显影剂使用于改善基材的润湿性的表面处理液雾化; 冷却单元，其冷却由所述加热板加热的所述基板; 以及表面处理液体供给单元，其从基板被加热直到冷却单元终止基板的冷却的期间的一部分，将雾化表面处理液供给到基板上。

4. 发明申请

US20090250079A1 SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS 有权
标题翻译：基板清洗方法和基板清洗装置
公开(公告)号：US20090250079A1
公开(公告)日：2009-10-08
申请号：US12400419
申请日：2009-03-09
申请人： Kousuke YOSHIHARA , Yuichi YOSHIDA , Taro YAMAMOTO
发明人： Kousuke YOSHIHARA , Yuichi YOSHIDA , Taro YAMAMOTO
IPC分类号： B08B7/04
CPC分类号： G03F7/168 , B08B3/024 , G03F7/3021 , H01L21/67051
摘要： The present invention relates to a substrate cleaning method for cleaning a substrate whose static contact angle with respect to water is 85 degrees or more. The substrate cleaning method includes a step in which the substrate is held horizontally by a substrate holder in such a manner that a central part of the substrate and a central part in rotation correspond to each other; a step in which, while the substrate holder is being rotated about a vertical axis, a cleaning liquid is discharged from a cleaning-liquid nozzle to the central part of the substrate and is spread over all the surface of the substrate by a centrifugal force; a step in which, while the substrate holder is being continuously rotated, a to-be-discharged position of the cleaning liquid on the substrate is changed to an eccentric position deviated from the central part of the substrate, and a gas is discharged from a gas nozzle to the central part of the substrate so as to form a dried area of the cleaning liquid under a condition in which a distance between an interface on a side of a to-be-discharged position of the gas in the to-be-discharged position of the cleaning liquid and an interface on a side of the to-be-discharged position of the cleaning liquid in the to-be-discharged position of the gas is set between 9 mm and 15 mm; and a step in which, while the substrate holder is being continuously rotated, the to-be-discharged position of the cleaning liquid is moved toward a periphery of the substrate at a speed lower than a speed at which the dried area is spread outward.
摘要翻译：本发明涉及一种清洗相对于水的静态接触角为85度以上的基板的基板清洗方法。基板清洗方法包括以下步骤：基板由基板保持器水平地保持，使得基板的中心部分和旋转中心部分彼此对应; 在衬底保持器围绕垂直轴线旋转的同时，清洗液从清洗液喷嘴排出到基板的中心部分，并通过离心力分散在基板的所有表面上; 在基板保持器持续旋转的同时，将基板上的清洗液的排出位置变更为离开基板的中心部的偏心位置，从而从气体喷嘴到基板的中心部分，以便在待处理气体的待排出位置的一侧的界面之间的距离处于这样的条件下形成清洁液体的干燥区域，清洁液体的排出位置和待排出位置的清洗液体的待排出位置一侧的界面设定在9mm〜15mm之间; 以及在衬底保持器持续旋转的同时，清洗液的排出位置以比干燥区域向外扩展的速度朝向衬底的周边移动的步骤。

5. 发明申请

US20100330508A1 DEVELOPING APPARATUS AND DEVELOPING METHOD 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20100330508A1
公开(公告)日：2010-12-30
申请号：US12877612
申请日：2010-09-08
申请人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
发明人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
IPC分类号： G03F7/30
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

6. 发明申请

US20070092643A1 RESIST COATING METHOD AND RESIST COATING APPARATUS 有权
标题翻译：电阻涂层方法和耐酸涂装置
公开(公告)号：US20070092643A1
公开(公告)日：2007-04-26
申请号：US11549826
申请日：2006-10-16
申请人： Kousuke YOSHIHARA , Tomohiro Iseki
发明人： Kousuke YOSHIHARA , Tomohiro Iseki
IPC分类号： B05D3/12 , B05C11/00 , B05C11/02
CPC分类号： H01L21/6715 , G03F7/162
摘要： A resist coating method supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then reduces a rotational speed of the target substrate to a second rotational speed lower than the first rotational speed, reduces the rotational speed of the target substrate to a third rotational speed lower than the second rotational speed or until rotational halt to adjust the film thickness of the resist solution, and accelerates the rotation of the target substrate to a fourth rotational speed higher than the third rotational speed to spin off a residue of the resist solution.
摘要翻译：抗蚀剂涂布方法在以第一转速旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后将目标基板的转速降低到低于第一转速的第二转速将目标基板的旋转速度降低到低于第二旋转速度的第三旋转速度，或者直到旋转停止，以调整抗蚀剂溶液的膜厚度，并且将目标基板的旋转加速至高于第三旋转速度以分离抗蚀剂溶液的残留物。

7. 发明申请

US20110146572A1 RESIST COATING METHOD AND RESIST COATING APPARATUS 有权
标题翻译：电阻涂层方法和耐酸涂装置
公开(公告)号：US20110146572A1
公开(公告)日：2011-06-23
申请号：US13038011
申请日：2011-03-01
申请人： Kousuke YOSHIHARA , Tomohiro Iseki
发明人： Kousuke YOSHIHARA , Tomohiro Iseki
IPC分类号： B05C9/02 , B05C11/00 , B05C13/00
CPC分类号： H01L21/6715 , G03F7/162
摘要： A resist coating method supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then reduces a rotational speed of the target substrate to a second rotational speed lower than the first rotational speed, reduces the rotational speed of the target substrate to a third rotational speed lower than the second rotational speed or until rotational halt to adjust the film thickness of the resist solution, and accelerates the rotation of the target substrate to a fourth rotational speed higher than the third rotational speed to spin off a residue of the resist solution.
摘要翻译：抗蚀剂涂布方法在以第一转速旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后将目标基板的转速降低到低于第一转速的第二转速将目标基板的旋转速度降低到低于第二旋转速度的第三旋转速度，或者直到旋转停止，以调整抗蚀剂溶液的膜厚度，并且将目标基板的旋转加速至高于第三旋转速度以分离抗蚀剂溶液的残留物。

8. 发明申请

US20110045414A1 RINSING METHOD, DEVELOPING METHOD, DEVELOPING SYSTEM AND COMPUTER-READ STORAGE MEDIUM 有权
标题翻译：研究方法，开发方法，开发系统和计算机读取存储介质
公开(公告)号：US20110045414A1
公开(公告)日：2011-02-24
申请号：US12913420
申请日：2010-10-27
申请人： Hirofumi TAKEGUCHI , Junji NAKAMURA , Kousuke YOSHIHARA
发明人： Hirofumi TAKEGUCHI , Junji NAKAMURA , Kousuke YOSHIHARA
IPC分类号： G03C5/00
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).
摘要翻译：本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑（步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂基底与冲洗液一起（步骤7）。

9. 发明申请

US20070253709A1 DEVELOPING APPARATUS, DEVELOPING PROCESSING METHOD, DEVELOPING PROCESSING PROGRAM, AND COMPUTER READABLE RECORDING MEDIUM RECORDING THE PROGRAM 有权
标题翻译：开发设备，开发处理方法，开发处理程序以及记录程序的计算机可读记录介质
公开(公告)号：US20070253709A1
公开(公告)日：2007-11-01
申请号：US11739848
申请日：2007-04-25
申请人： Kousuke YOSHIHARA
发明人： Kousuke YOSHIHARA
IPC分类号： G03D5/00
CPC分类号： G03D5/00
摘要： A developing apparatus, a developing processing method, a developing processing program, and a computer readable recording medium recording the program, which can reduce the consumption amount of the developing solution and the developing processing time irrespective of the type of resist materials or the shape of resist patterns, are provided. A step of horizontally holding a substrate and rotating the substrate around a vertical axis at a prescribed rotation rate, and a step of intermittently supplying a developing solution to a center of the substrate from a discharge port of a developing solution nozzle arranged opposing to the surface of the substrate are executed. In the step of intermittently supplying the developing solution to the center of the substrate, an intermittence time and a substrate rotation rate in the intermittence time are set to prevent the developing solution supplied to the substrate from drying.
摘要翻译：记录程序的显影装置，显影处理方法，显影处理程序和计算机可读记录介质，无论抗蚀剂材料的类型如何，都可以减少显影液的消耗量和显影处理时间，抗蚀剂图案。水平地保持基板并以规定的旋转速度使垂直轴线旋转的步骤，以及从显影液喷嘴的排出口向基板的中心间歇地供给显影液的步骤的基板。在将显影液间歇地供给到基板的中心的步骤中，设置间歇时间的间歇时间和基板旋转速度，以防止供给到基板的显影液干燥。

10. 发明申请

US20120276753A1 COATING TREATMENT APPARATUS, COATING AND DEVELOPING TREATMENT SYSTEM, COATING TREATMENT METHOD, AND NON-TRANSITORY RECORDING MEDIUM HAVING PROGRAM RECORDED THEREON FOR EXECUTING COATING TREATMENT METHOD 有权
标题翻译：涂层处理设备，涂层和开发处理系统，涂层处理方法和具有执行涂层处理方法记录的程序的非记录记录介质
公开(公告)号：US20120276753A1
公开(公告)日：2012-11-01
申请号：US13448526
申请日：2012-04-17
申请人： Kousuke YOSHIHARA , Koji Takayanagi , Shinichi Hatakeyama
发明人： Kousuke YOSHIHARA , Koji Takayanagi , Shinichi Hatakeyama
IPC分类号： H01L21/31 , G03B27/32 , B05C5/02
CPC分类号： H01L21/0337 , B05C11/023 , B05D1/005 , G03F7/162 , G06F19/00 , H01L21/0271 , H01L21/6715 , H01L51/0003 , H01L2224/03418
摘要： A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.
摘要翻译：一种涂布处理装置，其将涂布溶液供给到旋转的基板的前表面，并将供给的涂布溶液扩散到基板的外周侧，从而将涂布液涂布在基板的前表面上，包括：保持基板底物; 旋转部，旋转保持在所述基板保持部上的所述基板; 供给部，其向保持在所述基板保持部的所述基板的前表面供给涂布液; 以及气流控制板，其设置在保持在所述基板保持部上的所述基板上方的预定位置，用于在任意位置局部地改变由所述旋转部旋转的所述基板上方的气流。

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