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1. 发明授权

US08026048B2 Developing apparatus and developing method 有权
标题翻译：开发设备和开发方法
公开(公告)号：US08026048B2
公开(公告)日：2011-09-27
申请号：US12877612
申请日：2010-09-08
申请人： Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
发明人： Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
IPC分类号： G03F7/00 , G03F7/26 , G03F7/30 , B05C5/02
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

2. 发明申请

US20110096304A1 DEVELOPING APPARATUS, DEVELOPING METHOD AND STORAGE MEDIUM 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：US20110096304A1
公开(公告)日：2011-04-28
申请号：US12904458
申请日：2010-10-14
申请人： Hirofumi TAKEGUCHI , Tomohiro Iseki , Yuichi Yoshida , Kousuke Yoshihara
发明人： Hirofumi TAKEGUCHI , Tomohiro Iseki , Yuichi Yoshida , Kousuke Yoshihara
IPC分类号： G03B27/52 , G03D3/00
CPC分类号： G03F7/3021
摘要： A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.
摘要翻译：在显影过程之前进行的预处理过程，喷出纯水，即用于辅助显影剂在晶片表面上的扩散的扩散辅助液体，通过清洗液喷射喷嘴到达晶片的中心部分形成一个纯净的水坑。将显影剂喷射到晶片的中心部分以进行预润湿，同时晶片以高转速旋转以将显影剂铺展在晶片的表面上。显影剂部分地溶解抗蚀剂膜并产生溶液。晶片的旋转例如在7秒内相反，其中产生溶液以通过在晶片的整个表面上扩散溶液来降低晶片的拒水性。然后，将显影剂喷射到旋转的晶片上，以将显影剂铺展在晶片的表面上。

3. 发明授权

US07896562B2 Developing method, developing apparatus and storage medium 有权
标题翻译：显影方法，显影装置和存储介质
公开(公告)号：US07896562B2
公开(公告)日：2011-03-01
申请号：US12173285
申请日：2008-07-15
申请人： Taro Yamamoto , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
发明人： Taro Yamamoto , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
IPC分类号： G03D5/00 , G03B27/32 , B05C11/02
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A method of supplying a developing solution is provided. The method includes supplying a developing solution onto a substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part. The method further includes shifting a position of the ribbon-like region in which the developing solution is supplied. Developing solution is supplied from a second developing solution nozzle, so as to form a circular region on the central portion of the substrate or form a ribbon-like region shorter in length than the ribbon-like region of the developing solution supplied from the first developing nozzle. Simultaneously, the substrate is rotated about the vertical axis via the substrate holding part, thereby spreading the developing solution toward a peripheral portion of the substrate by centrifugal force.
摘要翻译：提供了提供显影液的方法。该方法包括从第一显影液喷嘴将显影液供给到基板上，以便在基板表面上形成带状区域，同时通过基板保持部件绕垂直轴线旋转基板。该方法还包括移动其中供应显影液的带状区域的位置。显影溶液由第二显影剂溶液喷嘴提供，以在基材的中心部分上形成圆形区域，或形成比从第一显影剂供应的显影溶液的带状区域的长度短的带状区域喷嘴。同时，基板经由基板保持部围绕垂直轴线旋转，从而通过离心力将显影液向基板的周边部分扩散。

4. 发明申请

US20100330508A1 DEVELOPING APPARATUS AND DEVELOPING METHOD 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20100330508A1
公开(公告)日：2010-12-30
申请号：US12877612
申请日：2010-09-08
申请人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
发明人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
IPC分类号： G03F7/30
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

5. 发明申请

US20090272407A1 SUBSTRATE CLEANING METHOD AND DEVELOPING APPARATUS 有权
标题翻译：基板清洗方法和开发设备
公开(公告)号：US20090272407A1
公开(公告)日：2009-11-05
申请号：US12503412
申请日：2009-07-15
申请人： Junji NAKAMURA , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji NAKAMURA , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： B08B3/04 , B08B1/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.
摘要翻译：清洗通过显影处理处理的基材表面的清洁方法。该方法包括将清洗液倒入基材的中心部分。在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域正在旋转。通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。将清洗液倒入围绕基材表面的干燥区域的外部区域上。

6. 发明申请

US20090035021A1 DEVELOPING METHOD, DEVELOPING APPARATUS AND STORAGE MEDIUM 有权
标题翻译：开发方法，开发设备和存储介质
公开(公告)号：US20090035021A1
公开(公告)日：2009-02-05
申请号：US12173285
申请日：2008-07-15
申请人： Taro YAMAMOTO , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
发明人： Taro YAMAMOTO , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
IPC分类号： G03G15/08
CPC分类号： H01L21/6715 , G03F7/3021
摘要： The present invention provides a method of supplying a developing solution, stably, onto a substrate, upon providing a developing process to the substrate which has been coated with a resist and subjected to an exposure process. In this method, the developing solution is supplied onto the substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part, wherein one end of the ribbon-like region is oriented toward a central portion of the substrate. At this time, by shifting a position of the ribbon-like region in which the developing solution is supplied, a liquid film of the developing solution can be formed on the surface of the substrate. Subsequently, in order to prevent the liquid film of the developing solution from being dried up, the developing solution is supplied from a second developing solution nozzle, so as to form a circular region on the central portion of the substrate or form a ribbon-like region shorter in length than the ribbon-like region of the developing solution supplied from the first developing nozzle. Simultaneously, the substrate is rotated about the vertical axis via the substrate holding part, thereby spreading the developing solution toward a peripheral portion of the substrate by centrifugal force. In this manner, the developing nozzles are selected, corresponding to the process to be performed.
摘要翻译：本发明提供一种向已经涂覆有抗蚀剂并进行曝光处理的基板提供显影处理时将显影液稳定地供给到基板上的方法。在该方法中，将显影液从第一显影液喷嘴供给到基板上，以在基板的表面上形成带状区域，同时经由基板保持部使基板绕垂直轴旋转，其中带状区域的一端朝向基板的中心部分。此时，通过移动供给显影液的带状区域的位置，可以在基板的表面上形成显影液的液膜。接下来，为了防止显影液的液膜干燥，从第二显影液喷嘴供给显影液，以在基板的中心部分形成圆形区域，或形成带状区域的长度比从第一显影喷嘴供给的显影液的带状区域短。同时，基板经由基板保持部围绕垂直轴线旋转，从而通过离心力将显影液向基板的周边部分扩散。以这种方式，根据要执行的处理来选择显影喷嘴。

7. 发明申请

US20120115090A1 SUBSTRATE TREATMENT METHOD, COMPUTER STORAGE MEDIUM AND SUBSTRATE TREATMENT APPARATUS 有权
标题翻译：基板处理方法，计算机存储介质和基板处理设备
公开(公告)号：US20120115090A1
公开(公告)日：2012-05-10
申请号：US13280409
申请日：2011-10-25
申请人： Hirofumi TAKEGUCHI , Yuichi YOSHIDA
发明人： Hirofumi TAKEGUCHI , Yuichi YOSHIDA
IPC分类号： G03F7/30 , B05B1/00
CPC分类号： H01L21/67051 , G03F7/3021 , G03F7/38 , H01L21/6715
摘要： The present disclosure is a substrate treatment method of supplying a surface treatment liquid onto a surface of a substrate having a film with high water repellency formed thereon, the method including: a liquid puddle forming step of forming a liquid puddle of the surface treatment liquid by supplying the surface treatment liquid from a nozzle to one location of a peripheral portion of the substrate; and a liquid puddle moving step of then moving the liquid puddle formed at the peripheral portion of the substrate to a central portion of the substrate by moving the nozzle from a position above the peripheral portion of the substrate to a position above the central portion of the substrate while continuing the supply of the surface treatment liquid.
摘要翻译：本公开是一种将表面处理液体供给到具有形成在其上形成有高斥水性的膜的基板的表面上的基板处理方法，该方法包括：液体水坑形成步骤，通过以下方式形成表面处理液体的液体熔池：将所述表面处理液体从喷嘴供给到所述基板的周边部分的一个位置; 以及液体搅拌移动步骤，然后通过将所述喷嘴从所述基板的周边部分上方的位置移动到所述基板的中心部分上方的位置，将形成在所述基板的周边部分处的所述液体熔池移动到所述基板的中心部分同时继续供应表面处理液体。

8. 发明申请

US20110127236A1 DEVELOPING DEVICE AND DEVELOPING METHOD 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20110127236A1
公开(公告)日：2011-06-02
申请号：US13024939
申请日：2011-02-10
申请人： Taro YAMAMOTO , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
发明人： Taro YAMAMOTO , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
IPC分类号： C23F1/04
CPC分类号： G03F7/3028 , G03F7/3021
摘要： The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.
摘要翻译：显影液的温度根据抗蚀剂的种类或抗蚀剂图案而变化。当扫描具有与衬底的有效面积的宽度匹配的长度的狭缝形喷射口的显影剂喷嘴时，施加显影溶液。在将其上涂覆有显影液的基板离开预定时间后，在扫描稀释剂喷嘴的同时供给稀释剂，从而基本上停止显影反应并使溶解的抗蚀剂组分扩散。可以通过控制显影液温度来快速溶解所需量的抗蚀剂，同时可以通过在预定时间内提供稀释剂而使溶解的抗蚀剂组分显示出不利影响之前，可以停止显影，从而获得具有均匀线的图案宽度和提高吞吐量。

9. 发明授权

US07901514B2 Substrate cleaning method and developing apparatus 有权
标题翻译：基板清洗方法及显影装置
公开(公告)号：US07901514B2
公开(公告)日：2011-03-08
申请号：US12503412
申请日：2009-07-15
申请人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： B08B7/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.
摘要翻译：清洗通过显影处理处理的基材表面的清洁方法。该方法包括将清洗液倒入基材的中心部分。在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域正在旋转。通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。将清洗液倒入围绕基材表面的干燥区域的外部区域上。

10. 发明申请

US20110045414A1 RINSING METHOD, DEVELOPING METHOD, DEVELOPING SYSTEM AND COMPUTER-READ STORAGE MEDIUM 有权
标题翻译：研究方法，开发方法，开发系统和计算机读取存储介质
公开(公告)号：US20110045414A1
公开(公告)日：2011-02-24
申请号：US12913420
申请日：2010-10-27
申请人： Hirofumi TAKEGUCHI , Junji NAKAMURA , Kousuke YOSHIHARA
发明人： Hirofumi TAKEGUCHI , Junji NAKAMURA , Kousuke YOSHIHARA
IPC分类号： G03C5/00
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).
摘要翻译：本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑（步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂基底与冲洗液一起（步骤7）。

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