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1. 发明申请

US20130075360A1 METHOD OF FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20130075360A1
公开(公告)日：2013-03-28
申请号：US13431209
申请日：2012-03-27
申请人： Hiroko NAKAMURA , Satoshi Tanaka , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
发明人： Hiroko NAKAMURA , Satoshi Tanaka , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
IPC分类号： B29C33/42 , B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern.
摘要翻译：根据一个实施例，提供了一种形成图案的方法，包括形成包括具有第一表面能的第一区域和在待处理膜上具有第二表面能的第二区域的引导图案，第一和第二区域沿一个方向交替布置，在引导图案上形成嵌段共聚物层，并且在嵌段共聚物层中引起微相分离，微相分离结构是层状嵌段共聚物图案。

2. 发明授权

US08636914B2 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US08636914B2
公开(公告)日：2014-01-28
申请号：US13431209
申请日：2012-03-27
申请人： Hiroko Nakamura , Satoshi Tanaka , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
发明人： Hiroko Nakamura , Satoshi Tanaka , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
IPC分类号： B29C33/42 , B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern.
摘要翻译：根据一个实施例，提供了一种形成图案的方法，包括形成包括具有第一表面能的第一区域和在待处理膜上具有第二表面能的第二区域的引导图案，第一和第二区域沿一个方向交替布置，在引导图案上形成嵌段共聚物层，并且在嵌段共聚物层中引起微相分离，微相分离结构是层状嵌段共聚物图案。

3. 发明授权

US09207531B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US09207531B2
公开(公告)日：2015-12-08
申请号：US13239449
申请日：2011-09-22
申请人： Hiroko Nakamura , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
发明人： Hiroko Nakamura , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
IPC分类号： H01L21/31 , H01L21/469 , G03F7/00 , B81C1/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.
摘要翻译：根据一个实施方案，通过将嵌段共聚物自组装成待加工的膜来形成包括第一和第二嵌段相的图案。存在于第一区域中的整个嵌段共聚物在第一条件下通过进行能量束照射和显影而除去，从而在第一区域以外的区域留下包括第一和第二嵌段相的图案。存在于第二区域中的第一块相位通过进行能量束照射和显影而在第二条件下被选择性地去除，从而在包括第一区域和第一区域之间的重叠区域中留下包括第一和第二块相的图案，区域，并且在除了重叠区域之外的第二区域中留下第二块相位的图案。用左图案蚀刻该胶片作为掩模。

4. 发明申请

US20120127454A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20120127454A1
公开(公告)日：2012-05-24
申请号：US13239449
申请日：2011-09-22
申请人： Hiroko NAKAMURA , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
发明人： Hiroko NAKAMURA , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
IPC分类号： G03B27/32
CPC分类号： G03F7/0002 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.
摘要翻译：根据一个实施方案，通过将嵌段共聚物自组装成待加工的膜来形成包括第一和第二嵌段相的图案。存在于第一区域中的整个嵌段共聚物在第一条件下通过进行能量束照射和显影而除去，从而在第一区域以外的区域留下包括第一和第二嵌段相的图案。存在于第二区域中的第一块相位通过进行能量束照射和显影而在第二条件下被选择性地去除，从而在包括第一区域和第一区域之间的重叠区域中留下包括第一和第二块相的图案，区域，并且在除了重叠区域之外的第二区域中留下第二块相位的图案。用左图案蚀刻该胶片作为掩模。

5. 发明授权

US07148138B2 Method of forming contact hole and method of manufacturing semiconductor device 失效
标题翻译：形成接触孔的方法和制造半导体器件的方法
公开(公告)号：US07148138B2
公开(公告)日：2006-12-12
申请号：US10969996
申请日：2004-10-22
申请人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： H01L21/4763
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译：一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔第一个方向显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

6. 发明申请

US20050196684A1 Mask pattern data producing method, patterning method, reticle correcting method, reticle manufacturing method, and semiconductor apparatus manufacturing method 失效
标题翻译：掩模图案数据制作方法，图案形成方法，掩模版修正方法，掩模版制造方法和半导体装置的制造方法
公开(公告)号：US20050196684A1
公开(公告)日：2005-09-08
申请号：US11061599
申请日：2005-02-22
申请人： Hiroko Nakamura , Toshiya Kotani , Satoshi Tanaka , Shoji Mimotogi
发明人： Hiroko Nakamura , Toshiya Kotani , Satoshi Tanaka , Shoji Mimotogi
IPC分类号： G03F1/92 , G03C5/00 , G03F9/00 , G06F17/50
CPC分类号： G03F7/0035 , G03F1/92 , G03F7/40
摘要： A mask pattern data producing method is disclosed, which comprises preparing design pattern data in which contact holes are arranged on part of the grid points in matrix, preparing first mask pattern data in which first opening patterns are arranged on all of the grid points, and designing second mask pattern data in which second opening patterns and third opening patterns are arranged, the second opening patterns being arranged on the grid points at which the contact holes are arranged in the design pattern data to include the first opening patterns, the third opening patterns being arranged on a pair of grid points, which is a pair of diagonal grid points only on which the contact holes are arranged in a unit grid formed by four grid points, to include the first opening patterns arranged on the pair of grid points, in place of the second opening patterns.
摘要翻译：公开了一种掩模图案数据制作方法，其特征在于，准备设置图形数据，其中接触孔被布置在矩阵中的网格点的一部分上，准备在所有网格点上布置第一开口图案的第一掩模图案数据，以及设计其中布置有第二开口图案和第三开口图案的第二掩模图案数据，第二开口图案布置在布置在设计图案数据中的接触孔的网格点上以包括第一开口图案，第三开口图案布置在一对栅格点上，该对栅格点仅在其上以4个格栅点形成的单位格栅布置在其上，以包括布置在该对网格点上的第一开口图案，第二个打开模式的地方。

7. 发明授权

US5549995A Photomask and method of manufacturing the same 失效
标题翻译：光掩模及其制造方法
公开(公告)号：US5549995A
公开(公告)日：1996-08-27
申请号：US402656
申请日：1995-03-13
申请人： Satoshi Tanaka , Soichi Inoue , Hiroko Nakamura
发明人： Satoshi Tanaka , Soichi Inoue , Hiroko Nakamura
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30
摘要： A transmitting photomask includes an optically transparent substrate having a major surface on which a plurality of recesses are selectively formed and transmitting exposure light, a plurality of opaque materials formed on the portions of the major surface of the transparent substrate, other than the recesses and preventing the exposure light from passing therethrough, and a plurality of transmitting portions constituted of the recesses. Each of the recesses has side walls formed perpendicular to the major surface of the transparent substrate so as to substantially coincide with a corresponding end face of each of the opaque materials, and adjacent transmitting portions have different depths. A method of manufacturing a transmitting photomask, includes a step of forming an opaque film preventing exposure light from passing therethrough on an optically transparent substrate transmitting the exposure light, a step of forming a plurality of opening patterns for forming a transmitting portion on the opaque film and thus forming a plurality of opaque materials with remaining portions of the opaque film, and a step of forming a plurality of transmitting portions including recesses having different depths alternately by etching the transparent substrate through the opening patterns by use of anisotropic etching.
摘要翻译：发送光掩模包括具有主表面的光学透明基板，多个凹部被选择性地形成在其上并透射曝光光，多个不透明材料形成在透明基板的主表面的除了凹部之外的部分上，并防止来自其的曝光光，以及由凹部构成的多个透光部。每个凹部具有垂直于透明基板的主表面形成的侧壁，以便与每个不透明材料的相应端面基本上重合，并且相邻的透光部分具有不同的深度。一种发送光掩模的制造方法，其特征在于，包括以下步骤：在透光曝光用光学透明基板上形成防止曝光的透光的不透明膜，在不透明膜上形成多个用于形成透光部的开口图案的工序并且由此形成多个不透明材料，其余部分是不透明膜，以及通过使用各向异性蚀刻通过开口图案蚀刻透明基板而交替地形成包括具有不同深度的凹槽的多个透光部分的步骤。

8. 发明授权

US07560197B2 Mask pattern data producing method, patterning method, reticle correcting method, reticle manufacturing method, and semiconductor apparatus manufacturing method 失效
标题翻译：掩模图案数据制作方法，图案形成方法，掩模版修正方法，掩模版制造方法和半导体装置的制造方法
公开(公告)号：US07560197B2
公开(公告)日：2009-07-14
申请号：US11061599
申请日：2005-02-22
申请人： Hiroko Nakamura , Toshiya Kotani , Satoshi Tanaka , Shoji Mimotogi
发明人： Hiroko Nakamura , Toshiya Kotani , Satoshi Tanaka , Shoji Mimotogi
IPC分类号： G03F1/06
CPC分类号： G03F7/0035 , G03F1/92 , G03F7/40
摘要： A mask pattern data producing method is disclosed, which comprises preparing design pattern data in which contact holes are arranged on part of the grid points in matrix, preparing first mask pattern data in which first opening patterns are arranged on all of the grid points, and designing second mask pattern data in which second opening patterns and third opening patterns are arranged, the second opening patterns being arranged on the grid points at which the contact holes are arranged in the design pattern data to include the first opening patterns, the third opening patterns being arranged on a pair of grid points, which is a pair of diagonal grid points only on which the contact holes are arranged in a unit grid formed by four grid points, to include the first opening patterns arranged on the pair of grid points, in place of the second opening patterns.
摘要翻译：公开了一种掩模图案数据制作方法，其特征在于，准备设置图形数据，其中接触孔被布置在矩阵中的网格点的一部分上，准备在所有网格点上布置第一开口图案的第一掩模图案数据，以及设计其中布置有第二开口图案和第三开口图案的第二掩模图案数据，第二开口图案布置在布置在设计图案数据中的接触孔的网格点上以包括第一开口图案，第三开口图案布置在一对栅格点上，该对栅格点仅在其上以4个格栅点形成的单位格栅布置在其上，以包括布置在该对网格点上的第一开口图案，第二个打开模式的地方。

9. 发明申请

US20050153540A1 Method of forming contact hole and method of manufacturing semiconductor device 失效
标题翻译：形成接触孔的方法和制造半导体器件的方法
公开(公告)号：US20050153540A1
公开(公告)日：2005-07-14
申请号：US10969996
申请日：2004-10-22
申请人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F7/26 , G03F7/20 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译：一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔第一个方向显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

10. 发明授权

US09678561B2 Information processing apparatus 有权
公开(公告)号：US09678561B2
公开(公告)日：2017-06-13
申请号：US14036395
申请日：2013-09-25
申请人： Satoshi Tanaka
发明人： Satoshi Tanaka
IPC分类号： G06F1/32
CPC分类号： G06F1/3234 , G06F1/3284 , G06F1/3293 , Y02D10/122 , Y02D10/159
摘要： In the invention, a first processor that controls operation of a predetermined controlled unit and a second processor are operated in a first mode, a second mode, and a third mode, in the first mode the first processor and second processor are operable respectively, in the second mode respective amounts of power supplied to the first and second processors are lower than that in the first mode, in the third mode respective amounts of power supplied to the first and second processors are an amount between that in the first mode and that in the second mode and at least the predetermined controlled unit is operable, and in the second mode, the first processor puts a process related to the first processor before a process related to the second processor until the second mode is transited to the third mode.

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