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1. 发明申请

US20100330508A1 DEVELOPING APPARATUS AND DEVELOPING METHOD 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20100330508A1
公开(公告)日：2010-12-30
申请号：US12877612
申请日：2010-09-08
申请人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
发明人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
IPC分类号： G03F7/30
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

2. 发明申请

US20090311632A1 DEVELOPING METHOD AND DEVELOPING APPARATUS 有权
标题翻译：发展方法和发展手段
公开(公告)号：US20090311632A1
公开(公告)日：2009-12-17
申请号：US12472728
申请日：2009-05-27
申请人： Hirofumi TAKEGUCHI , Taro YAMAMOTO , Kousuke YOSHIHARA
发明人： Hirofumi TAKEGUCHI , Taro YAMAMOTO , Kousuke YOSHIHARA
IPC分类号： G03F7/20 , G03D5/00
CPC分类号： G03F7/162 , G03F7/3021
摘要： A developing method comprising a developing step in which, while a wafer horizontally held by a spin chuck is being rotated, the wafer is developed by supplying a developer onto a surface of the wafer, wherein provided before the developing step is a pre-wetting step in which, simultaneously with the developer being supplied from a first nozzle that is located on a position near a central part of the surface of the rotating wafer, a deionized water as a second liquid is supplied from a second nozzle that is located on a position nearer to an outer peripheral part of the wafer than the first nozzle, to thereby spread out the developer in the rotating direction of the wafer by a wall that is formed by the deionized water flowing the outer peripheral side of the wafer with the rotation of the wafer. Thus, a wetting property of a surface of a resist film formed on the wafer that is made hydrophobic can be improved, whereby a developer film can be efficiently formed and thus the developing process can be stabilized.
摘要翻译：一种显影方法，其包括显影步骤，其中当由旋转卡盘水平保持的晶片正在旋转时，通过将显影剂供应到晶片的表面上来显影晶片，其中在显影步骤之前提供预润湿步骤其中与来自位于旋转晶片表面的中心附近的位置的第一喷嘴一起供给显影剂，作为第二液体的去离子水从位于位置上的第二喷嘴供给比第一喷嘴更靠近晶片的外围周边部分，从而通过由离开晶粒的外周侧的去离子水形成的壁沿着晶片的旋转方向展开显影剂，晶圆。因此，可以提高形成在疏水性的晶片上的抗蚀剂膜的表面的润湿性，从而可以有效地形成显影剂膜，从而可以稳定显影处理。

3. 发明申请

US20110096304A1 DEVELOPING APPARATUS, DEVELOPING METHOD AND STORAGE MEDIUM 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：US20110096304A1
公开(公告)日：2011-04-28
申请号：US12904458
申请日：2010-10-14
申请人： Hirofumi TAKEGUCHI , Tomohiro Iseki , Yuichi Yoshida , Kousuke Yoshihara
发明人： Hirofumi TAKEGUCHI , Tomohiro Iseki , Yuichi Yoshida , Kousuke Yoshihara
IPC分类号： G03B27/52 , G03D3/00
CPC分类号： G03F7/3021
摘要： A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.
摘要翻译：在显影过程之前进行的预处理过程，喷出纯水，即用于辅助显影剂在晶片表面上的扩散的扩散辅助液体，通过清洗液喷射喷嘴到达晶片的中心部分形成一个纯净的水坑。将显影剂喷射到晶片的中心部分以进行预润湿，同时晶片以高转速旋转以将显影剂铺展在晶片的表面上。显影剂部分地溶解抗蚀剂膜并产生溶液。晶片的旋转例如在7秒内相反，其中产生溶液以通过在晶片的整个表面上扩散溶液来降低晶片的拒水性。然后，将显影剂喷射到旋转的晶片上，以将显影剂铺展在晶片的表面上。

4. 发明申请

US20110045414A1 RINSING METHOD, DEVELOPING METHOD, DEVELOPING SYSTEM AND COMPUTER-READ STORAGE MEDIUM 有权
标题翻译：研究方法，开发方法，开发系统和计算机读取存储介质
公开(公告)号：US20110045414A1
公开(公告)日：2011-02-24
申请号：US12913420
申请日：2010-10-27
申请人： Hirofumi TAKEGUCHI , Junji NAKAMURA , Kousuke YOSHIHARA
发明人： Hirofumi TAKEGUCHI , Junji NAKAMURA , Kousuke YOSHIHARA
IPC分类号： G03C5/00
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).
摘要翻译：本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑（步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂基底与冲洗液一起（步骤7）。

5. 发明申请

US20070116459A1 RINSING METHOD, DEVELOPING METHOD, DEVELOPING SYSTEM AND COMPUTER-READ STORAGE MEDIUM 有权
标题翻译：研究方法，开发方法，开发系统和计算机读取存储介质
公开(公告)号：US20070116459A1
公开(公告)日：2007-05-24
申请号：US11554192
申请日：2006-10-30
申请人： Hirofumi TAKEGUCHI , Junji NAKAMURA , Kousuke YOSHIHARA
发明人： Hirofumi TAKEGUCHI , Junji NAKAMURA , Kousuke YOSHIHARA
IPC分类号： B08B7/00 , G03D5/00
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).
摘要翻译：本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑（步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂基底与冲洗液一起（步骤7）。

6. 发明申请

US20120115090A1 SUBSTRATE TREATMENT METHOD, COMPUTER STORAGE MEDIUM AND SUBSTRATE TREATMENT APPARATUS 有权
标题翻译：基板处理方法，计算机存储介质和基板处理设备
公开(公告)号：US20120115090A1
公开(公告)日：2012-05-10
申请号：US13280409
申请日：2011-10-25
申请人： Hirofumi TAKEGUCHI , Yuichi YOSHIDA
发明人： Hirofumi TAKEGUCHI , Yuichi YOSHIDA
IPC分类号： G03F7/30 , B05B1/00
CPC分类号： H01L21/67051 , G03F7/3021 , G03F7/38 , H01L21/6715
摘要： The present disclosure is a substrate treatment method of supplying a surface treatment liquid onto a surface of a substrate having a film with high water repellency formed thereon, the method including: a liquid puddle forming step of forming a liquid puddle of the surface treatment liquid by supplying the surface treatment liquid from a nozzle to one location of a peripheral portion of the substrate; and a liquid puddle moving step of then moving the liquid puddle formed at the peripheral portion of the substrate to a central portion of the substrate by moving the nozzle from a position above the peripheral portion of the substrate to a position above the central portion of the substrate while continuing the supply of the surface treatment liquid.
摘要翻译：本公开是一种将表面处理液体供给到具有形成在其上形成有高斥水性的膜的基板的表面上的基板处理方法，该方法包括：液体水坑形成步骤，通过以下方式形成表面处理液体的液体熔池：将所述表面处理液体从喷嘴供给到所述基板的周边部分的一个位置; 以及液体搅拌移动步骤，然后通过将所述喷嘴从所述基板的周边部分上方的位置移动到所述基板的中心部分上方的位置，将形成在所述基板的周边部分处的所述液体熔池移动到所述基板的中心部分同时继续供应表面处理液体。

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