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1. 发明申请

US20110096304A1 DEVELOPING APPARATUS, DEVELOPING METHOD AND STORAGE MEDIUM 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：US20110096304A1
公开(公告)日：2011-04-28
申请号：US12904458
申请日：2010-10-14
申请人： Hirofumi TAKEGUCHI , Tomohiro Iseki , Yuichi Yoshida , Kousuke Yoshihara
发明人： Hirofumi TAKEGUCHI , Tomohiro Iseki , Yuichi Yoshida , Kousuke Yoshihara
IPC分类号： G03B27/52 , G03D3/00
CPC分类号： G03F7/3021
摘要： A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.
摘要翻译：在显影过程之前进行的预处理过程，喷出纯水，即用于辅助显影剂在晶片表面上的扩散的扩散辅助液体，通过清洗液喷射喷嘴到达晶片的中心部分形成一个纯净的水坑。将显影剂喷射到晶片的中心部分以进行预润湿，同时晶片以高转速旋转以将显影剂铺展在晶片的表面上。显影剂部分地溶解抗蚀剂膜并产生溶液。晶片的旋转例如在7秒内相反，其中产生溶液以通过在晶片的整个表面上扩散溶液来降低晶片的拒水性。然后，将显影剂喷射到旋转的晶片上，以将显影剂铺展在晶片的表面上。

2. 发明授权

US08956694B2 Developing apparatus, developing method and storage medium 有权
标题翻译：显影装置，显影方法和存储介质
公开(公告)号：US08956694B2
公开(公告)日：2015-02-17
申请号：US12904458
申请日：2010-10-14
申请人： Hirofumi Takeguchi , Tomohiro Iseki , Yuichi Yoshida , Kousuke Yoshihara
发明人： Hirofumi Takeguchi , Tomohiro Iseki , Yuichi Yoshida , Kousuke Yoshihara
IPC分类号： B05D3/12 , G03C5/29 , G03F7/30
CPC分类号： G03F7/3021
摘要： A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.
摘要翻译：在显影过程之前进行的预处理过程，喷出纯水，即用于辅助显影剂在晶片表面上的扩散的扩散辅助液体，通过清洗液喷射喷嘴到达晶片的中心部分形成一个纯净的水坑。将显影剂喷射到晶片的中心部分以进行预润湿，同时晶片以高转速旋转以将显影剂铺展在晶片的表面上。显影剂部分地溶解抗蚀剂膜并产生溶液。晶片的旋转例如在7秒内相反，其中产生溶液以通过在晶片的整个表面上扩散溶液来降低晶片的拒水性。然后，将显影剂喷射到旋转的晶片上，以将显影剂铺展在晶片的表面上。

3. 发明授权

US08026048B2 Developing apparatus and developing method 有权
标题翻译：开发设备和开发方法
公开(公告)号：US08026048B2
公开(公告)日：2011-09-27
申请号：US12877612
申请日：2010-09-08
申请人： Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
发明人： Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
IPC分类号： G03F7/00 , G03F7/26 , G03F7/30 , B05C5/02
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

4. 发明授权

US07896562B2 Developing method, developing apparatus and storage medium 有权
标题翻译：显影方法，显影装置和存储介质
公开(公告)号：US07896562B2
公开(公告)日：2011-03-01
申请号：US12173285
申请日：2008-07-15
申请人： Taro Yamamoto , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
发明人： Taro Yamamoto , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
IPC分类号： G03D5/00 , G03B27/32 , B05C11/02
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A method of supplying a developing solution is provided. The method includes supplying a developing solution onto a substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part. The method further includes shifting a position of the ribbon-like region in which the developing solution is supplied. Developing solution is supplied from a second developing solution nozzle, so as to form a circular region on the central portion of the substrate or form a ribbon-like region shorter in length than the ribbon-like region of the developing solution supplied from the first developing nozzle. Simultaneously, the substrate is rotated about the vertical axis via the substrate holding part, thereby spreading the developing solution toward a peripheral portion of the substrate by centrifugal force.
摘要翻译：提供了提供显影液的方法。该方法包括从第一显影液喷嘴将显影液供给到基板上，以便在基板表面上形成带状区域，同时通过基板保持部件绕垂直轴线旋转基板。该方法还包括移动其中供应显影液的带状区域的位置。显影溶液由第二显影剂溶液喷嘴提供，以在基材的中心部分上形成圆形区域，或形成比从第一显影剂供应的显影溶液的带状区域的长度短的带状区域喷嘴。同时，基板经由基板保持部围绕垂直轴线旋转，从而通过离心力将显影液向基板的周边部分扩散。

5. 发明申请

US20090272407A1 SUBSTRATE CLEANING METHOD AND DEVELOPING APPARATUS 有权
标题翻译：基板清洗方法和开发设备
公开(公告)号：US20090272407A1
公开(公告)日：2009-11-05
申请号：US12503412
申请日：2009-07-15
申请人： Junji NAKAMURA , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji NAKAMURA , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： B08B3/04 , B08B1/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.
摘要翻译：清洗通过显影处理处理的基材表面的清洁方法。该方法包括将清洗液倒入基材的中心部分。在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域正在旋转。通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。将清洗液倒入围绕基材表面的干燥区域的外部区域上。

6. 发明申请

US20090035021A1 DEVELOPING METHOD, DEVELOPING APPARATUS AND STORAGE MEDIUM 有权
标题翻译：开发方法，开发设备和存储介质
公开(公告)号：US20090035021A1
公开(公告)日：2009-02-05
申请号：US12173285
申请日：2008-07-15
申请人： Taro YAMAMOTO , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
发明人： Taro YAMAMOTO , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
IPC分类号： G03G15/08
CPC分类号： H01L21/6715 , G03F7/3021
摘要： The present invention provides a method of supplying a developing solution, stably, onto a substrate, upon providing a developing process to the substrate which has been coated with a resist and subjected to an exposure process. In this method, the developing solution is supplied onto the substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part, wherein one end of the ribbon-like region is oriented toward a central portion of the substrate. At this time, by shifting a position of the ribbon-like region in which the developing solution is supplied, a liquid film of the developing solution can be formed on the surface of the substrate. Subsequently, in order to prevent the liquid film of the developing solution from being dried up, the developing solution is supplied from a second developing solution nozzle, so as to form a circular region on the central portion of the substrate or form a ribbon-like region shorter in length than the ribbon-like region of the developing solution supplied from the first developing nozzle. Simultaneously, the substrate is rotated about the vertical axis via the substrate holding part, thereby spreading the developing solution toward a peripheral portion of the substrate by centrifugal force. In this manner, the developing nozzles are selected, corresponding to the process to be performed.
摘要翻译：本发明提供一种向已经涂覆有抗蚀剂并进行曝光处理的基板提供显影处理时将显影液稳定地供给到基板上的方法。在该方法中，将显影液从第一显影液喷嘴供给到基板上，以在基板的表面上形成带状区域，同时经由基板保持部使基板绕垂直轴旋转，其中带状区域的一端朝向基板的中心部分。此时，通过移动供给显影液的带状区域的位置，可以在基板的表面上形成显影液的液膜。接下来，为了防止显影液的液膜干燥，从第二显影液喷嘴供给显影液，以在基板的中心部分形成圆形区域，或形成带状区域的长度比从第一显影喷嘴供给的显影液的带状区域短。同时，基板经由基板保持部围绕垂直轴线旋转，从而通过离心力将显影液向基板的周边部分扩散。以这种方式，根据要执行的处理来选择显影喷嘴。

7. 发明申请

US20110127236A1 DEVELOPING DEVICE AND DEVELOPING METHOD 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20110127236A1
公开(公告)日：2011-06-02
申请号：US13024939
申请日：2011-02-10
申请人： Taro YAMAMOTO , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
发明人： Taro YAMAMOTO , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
IPC分类号： C23F1/04
CPC分类号： G03F7/3028 , G03F7/3021
摘要： The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.
摘要翻译：显影液的温度根据抗蚀剂的种类或抗蚀剂图案而变化。当扫描具有与衬底的有效面积的宽度匹配的长度的狭缝形喷射口的显影剂喷嘴时，施加显影溶液。在将其上涂覆有显影液的基板离开预定时间后，在扫描稀释剂喷嘴的同时供给稀释剂，从而基本上停止显影反应并使溶解的抗蚀剂组分扩散。可以通过控制显影液温度来快速溶解所需量的抗蚀剂，同时可以通过在预定时间内提供稀释剂而使溶解的抗蚀剂组分显示出不利影响之前，可以停止显影，从而获得具有均匀线的图案宽度和提高吞吐量。

8. 发明授权

US07901514B2 Substrate cleaning method and developing apparatus 有权
标题翻译：基板清洗方法及显影装置
公开(公告)号：US07901514B2
公开(公告)日：2011-03-08
申请号：US12503412
申请日：2009-07-15
申请人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： B08B7/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.
摘要翻译：清洗通过显影处理处理的基材表面的清洁方法。该方法包括将清洗液倒入基材的中心部分。在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域正在旋转。通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。将清洗液倒入围绕基材表面的干燥区域的外部区域上。

9. 发明授权

US07604013B2 Substrate cleaning method and developing apparatus 有权
标题翻译：基板清洗方法及显影装置
公开(公告)号：US07604013B2
公开(公告)日：2009-10-20
申请号：US11074781
申请日：2005-03-09
申请人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area. The cleaning liquid pouring nozzle is moved at a nozzle moving speed high enough to keep the cleaning liquid pouring position ahead of the margin of the dry area and pouring the cleaning liquid is stopped upon the arrival of the cleaning liquid pouring nozzle at a predetermined position at 80 mm from the center of the wafer or at 5 mm above toward the center of the wafer from the peripheral edge of the wafer. The cleaning liquid may be poured through another cleaning liquid pouring nozzle disposed beforehand at the predetermined position and pouring the cleaning liquid through the cleaning liquid pouring nozzle may be stopped immediately before the margin of the dry area reaches a part onto which the cleaning liquid is poured through the cleaning liquid pouring nozzle. Preferably, a gas is blown instantaneously against the central part of the wafer to form a core fore the dry area.
摘要翻译：一种清洁方法，通过除去溶解产物，通过除去半导体晶片的表面，通过利用显影处理来处理半导体晶片的表面，所述显影处理通过用显影剂润湿暴露的膜来形成半导体晶片上形成的曝光膜，从半导体晶片的表面。将清洗液通过清洗液倒出嘴注入到通过显影处理处理的旋转晶片的中心部分上，以将清洁液体以薄膜的形式展开在晶片的表面上。然后，移动清洗液倾倒嘴，在晶片的中心部分产生干燥区域，以1500rpm的速度旋转晶片，使干燥面积扩大。清洗液倾倒嘴以喷嘴移动速度移动到足够高的水平，以将清洁液注入位于干燥区域的边缘之前，并且在清洁液体倾倒嘴到达预定位置时停止清洗液体的倾倒距离晶片的中心80mm，或距离晶片的周边边缘朝向晶片中心5mm以上。清洗液可以通过预先设置在预定位置的另一个清洗液倒出喷嘴注入，并且清洗液通过清洗液倒出嘴可以在干燥区域的边缘到达清洗液倒入的部分之前立即停止通过清洗液倒出嘴。优选地，将气体瞬间吹到晶片的中心部分，以在干燥区域之前形成核心。

10. 发明申请

US20060048792A1 Substrate cleaning method and developing apparatus 有权
公开(公告)号：US20060048792A1
公开(公告)日：2006-03-09
申请号：US11074781
申请日：2005-03-09
申请人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： C23G1/00 , C03C23/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area. The cleaning liquid pouring nozzle is moved at a nozzle moving speed high enough to keep the cleaning liquid pouring position ahead of the margin of the dry area and pouring the cleaning liquid is stopped upon the arrival of the cleaning liquid pouring nozzle at a predetermined position at 80 mm from the center of the wafer or at 5 mm above toward the center of the wafer from the peripheral edge of the wafer. The cleaning liquid may be poured through another cleaning liquid pouring nozzle disposed beforehand at the predetermined position and pouring the cleaning liquid through the cleaning liquid pouring nozzle may be stopped immediately before the margin of the dry area reaches a part onto which the cleaning liquid is poured through the cleaning liquid pouring nozzle. Preferably, a gas is blown instantaneously against the central part of the wafer to form a core fore the dry area.

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