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    • 5. 发明授权
    • Ion implantation apparatus
    • 离子注入装置
    • US5025167A
    • 1991-06-18
    • US533769
    • 1990-06-06
    • Soichiro OkudaTetsuya NakanishiShigeo SasakiKazuhiko Noguchi
    • Soichiro OkudaTetsuya NakanishiShigeo SasakiKazuhiko Noguchi
    • H01J37/09H01J37/304H01J37/317
    • H01J37/09H01J37/304H01J37/3171
    • An ion implantation apparatus comprises an ion beam measuring device to measure and analyze the shape of a beam projected on a substrate for ion implantation and the quantity of current obtained by the ion beam, an analyzing slit member having an opening whose width is changeable, which is located in the ion beam track to extract only implantation ions, and a shaping slit member having an opening whose width is changeable, which is located behind the analyzing slit member to determine the shape of the beam to be projected on the substrate for ion implantation, wherein the widths of the openings of the analyzing slit member and the shaping slit member are changed on the basis of the shape of the beam and the quantity of current obtained as a result of the measurement by the ion beam measuring device.
    • 离子注入装置包括离子束测量装置,用于测量和分析投影在用于离子注入的基板上的光束的形状和由离子束获得的电流量,分析狭缝部件,其具有宽度可变的开口, 位于离子束轨道中以仅提取注入离子;以及成形狭缝构件,其具有位于分析狭缝构件后面的宽度可变的开口,以确定要投影到用于离子注入的衬底上的光束的形状 其中分析狭缝部件和成形狭缝部件的开口的宽度基于由离子束测量装置测量的结果获得的光束形状和电流量而改变。