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    • 2. 发明授权
    • Thin film forming apparatus
    • 薄膜成型装置
    • US5305366A
    • 1994-04-19
    • US817660
    • 1992-01-07
    • Takehiko NakaharaMasao KoshinakaNobuyuki KosakaToshimasa Tomoda
    • Takehiko NakaharaMasao KoshinakaNobuyuki KosakaToshimasa Tomoda
    • G01N23/223G01N23/225H01L21/66
    • G01N23/2252G01N23/223G01N23/2257G01N2223/076
    • This invention relates to a method and apparatus for analyzing a plurality of elements that are present on the surface of a material of interest or in its neighborhood, as well as a thin-film forming apparatus that is capable of measuring the composition of a sample during thin film formation in the process of semi-conductor fabrication. The apparatus are characterized in that a detector is isolated from the light and heat generated in a sample making mechanism by means of a shield which is not only heat-resistant but also transmissive of fluorescent X-ray containing soft X-rays of 1 Kev and below and that a mirror for total reflection of X-rays which is equipped with slits capable of adjusting the incident and exit angles of fluorescent X-rays from the sample excited with an excitation source as well as the ranges of those angles is provided either at the entrance or exit of said shield or at both.
    • 本发明涉及一种用于分析存在于感兴趣的材料的表面上或其附近的多个元素的方法和装置,以及能够测量样品组成的薄膜形成装置 半导体制造过程中的薄膜形成。 该装置的特征在于,检测器借助于不仅耐热而且还透射含有1Kev的软X射线的荧光X射线的屏蔽而与样品制造机构中产生的光和热隔离, 并且配备有能够调节来自激发源激发的样品的荧光X射线的入射角和出射角度的狭缝以及这些角度的范围的X射线的全反射镜,可以在 所述护罩的入口或出口或两者。
    • 6. 发明授权
    • Inspection device for detecting defects in a periodic pattern on a
semiconductor wafer
    • 用于检测半导体晶片周期性图案中的缺陷的检查装置
    • US5170063A
    • 1992-12-08
    • US661140
    • 1991-02-27
    • Yoko MiyazakiHitoshi TanakaNobuyuki KosakaToshimasa Tomoda
    • Yoko MiyazakiHitoshi TanakaNobuyuki KosakaToshimasa Tomoda
    • G01N21/88G01N21/956G03H1/00G06T1/00
    • G01N21/95623G03H1/00
    • An inspection device for detecting defects in a periodic pattern on a semiconductor wafer includes a laser oscillator. In the exposure process, light emitted from the laser oscillator is divided into a subject beam and a reference beam. The subject beam is guided to a semiconductor wafer having a periodic pattern thereon by mirrors and a beam expander. The light scattered from the specimen is collected by a lens on a photographic plate. The reference beam is guided to the photographic plate via a second beam expander and another mirror. The intensity of the reference beam is adjusted to a level at which the reference beams interferes on the photographic plate with the light scattered from defects in the periodic pattern and collected by the lens. Thus, a hologram of the defects in the pattern is recorded on the photographic plate. After development, the photographic plate is returned to its original position and used to form a holographic image of the defects with a transmitted regeneration light beam.
    • 用于检测半导体晶片周期性图案中的缺陷的检查装置包括激光振荡器。 在曝光过程中,从激光振荡器发射的光被分成目标光束和参考光束。 目标光束通过反射镜和光束扩展器被引导到其上具有周期性图案的半导体晶片。 从样本散射的光由照相板上的透镜收集。 参考光束通过第二光束扩展器和另一个反射镜被引导到照相板。 参考光束的强度被调整到参考光束干涉照相板的水平,其中光从周期性图案中的缺陷散射并由透镜收集。 因此,图案上的缺陷的全息图被记录在照相板上。 在显影之后,照相板返回其原始位置,并用于通过发射的再生光束形成缺陷的全息图像。