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1. 发明授权

US4836888A Method of chemically etching semiconductor substrate 失效
标题翻译：化学蚀刻半导体衬底的方法
公开(公告)号：US4836888A
公开(公告)日：1989-06-06
申请号：US194943
申请日：1988-05-17
申请人： Hidetoshi Nojiri , Ryuta Hirayama
发明人： Hidetoshi Nojiri , Ryuta Hirayama
IPC分类号： H01L21/306 , H01L21/3063
CPC分类号： H01L21/3063 , Y10S438/977
摘要： In a method of etching a semiconductor substrate to a desired depth from the principal surface is a selected area or selected areas by immersing the semiconductor substrate with a patterned mask such as oxide film in an etching liquid such as hydrated hydrazine, an electrode is formed on a surface of the semiconductor substrate in an area separated from the area(s) to be etched before immersing the substrate in the etching liquid. The material of the electrode is chemically stable and insusceptible to reaction with the etching liquid. In the disclosed etching method, a cathodic reduction reaction takes place on the aforementioned electrode while an anodic oxidation reaction, which causes anodic dissolution of the semiconductor material, takes place in the exposed area(s) of the semiconductor substrate. Therefore, etching is not obstacled by precipitation of the material once dissolved in the etching liquid, so that the new surface provided by etching is excellen in flatness.
摘要翻译：在通过将诸如氧化物膜的图案化掩模的半导体衬底浸入诸如水合肼的蚀刻液中的方法中，将半导体衬底蚀刻到从主表面到期望深度的方法是选定区域或选定区域，在将基板浸渍在蚀刻液中之前，在与要蚀刻的区域分离的区域中的半导体衬底的表面。电极的材料是化学稳定的并且不易与蚀刻液体反应。在所公开的蚀刻方法中，在上述电极上进行阴极还原反应，同时在半导体衬底的暴露区域发生导致半导体材料的阳极溶解的阳极氧化反应。因此，蚀刻不会被溶解在蚀刻液中的材料的沉淀所阻挡，因此通过蚀刻提供的新表面的平坦性优异。

2. 发明授权

US06666943B2 Film transfer method 有权
公开(公告)号：US06666943B2
公开(公告)日：2003-12-23
申请号：US09998227
申请日：2001-12-03
申请人： Takatsugu Wada , Hidetoshi Nojiri , Masatake Akaike , Takehiko Kawasaki , Rei Kurashima , Satoshi Nozu , Kozo Hokayama
发明人： Takatsugu Wada , Hidetoshi Nojiri , Masatake Akaike , Takehiko Kawasaki , Rei Kurashima , Satoshi Nozu , Kozo Hokayama
IPC分类号： B44C1165
CPC分类号： H01L41/316 , B41J2/161 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1646 , H01L41/0926 , H01L41/1876 , H01L41/253 , H01L41/313 , Y10S117/915 , Y10S428/914 , Y10T428/2486 , Y10T428/24917
摘要： A device is formed by transferring a film onto a substrate when the film requires but the substrate is not adapted to a high temperature heat treatment process. The film having layers and formed on a first substrate having layers is transferred onto a second substrate having layers. The method of transferring the film comprises a first step of forming a lift-off layer and the film to be transferred on the first substrate, a second step of bonding the film to be transferred to the second substrate and a third step of separating the film to be transferred from the first substrate by etching the lift-off layer and transferring it onto the second substrate.

3. 发明授权

US5285514A Waveguide type photodetector and a method of fabricating the same 失效
标题翻译：波导型光电检测器及其制造方法
公开(公告)号：US5285514A
公开(公告)日：1994-02-08
申请号：US887806
申请日：1992-05-26
申请人： Hidetoshi Nojiri , Tamayo Hirokio
发明人： Hidetoshi Nojiri , Tamayo Hirokio
IPC分类号： G02F1/025 , G02B6/12 , G02B6/122 , G02B6/42 , H01L31/0264 , H01L31/10 , H01L31/112 , G02B6/10
CPC分类号： G02B6/122 , G02B6/12004 , G02B6/4206 , H01L31/1123
摘要： In a waveguide type photodetector for receiving and detecting a light guided thereinto, a groove is formed in a semiconductor substrate, a waveguide layer is formed on the semiconductor substrate, and a light absorbing layer for absorbing a light propagated through a waveguide in the waveguide layer is formed on the waveguide layer. The waveguide is formed as a three-dimensional waveguide formed in the waveguide layer due to the presense of the groove. The three-dimensional waveguide is maintained also under the light absorbing layer since the refractive index of a portion layered on the groove formed in the substrate is made large than that of portions other than this portion layered above the groove.
摘要翻译：在用于接收和检测被引导到其中的光的波导型光检测器中，在半导体衬底中形成沟槽，在半导体衬底上形成波导层，以及用于吸收通过波导层中的波导传播的光的光吸收层形成在波导层上。波导由于凹槽的出现而形成在波导层中形成的三维波导。由于形成在基板上的凹槽上的部分的折射率比层叠在凹槽之上的部分以外的部分的折射率大，所以三维波导也保持在光吸收层的下方。

4. 发明授权

US4828644A Etching device for semiconductor wafers 失效
标题翻译：半导体晶圆蚀刻装置
公开(公告)号：US4828644A
公开(公告)日：1989-05-09
申请号：US61197
申请日：1987-06-15
申请人： Hidetoshi Nojiri , Masahi Nakamura
发明人： Hidetoshi Nojiri , Masahi Nakamura
IPC分类号： H01L21/3063 , C25F3/02
CPC分类号： C25F3/02
摘要： Work pieces are immersed in an etchant in a spaced contact free relationship with the electrodes of the system. The two electrodes are separated by a filter which prevents charge carrying particles dispersed in the etchant surrounding the electrode closest to the work pieces and which assume the same charge, from migrating to and contacting the more remote one. The etchant containing the particles is physically agitated whereby the distribution of the particles which transfer electrical energy to the work pieces and induce electrochemical etching thereof is unified.
摘要翻译：工件以与系统的电极间隔开的无接触的关系浸入蚀刻剂中。两个电极被过滤器隔开，该过滤器防止分散在最靠近工件的电极周围的腐蚀剂中的电荷携带颗粒，并且承受相同的电荷，从而迁移到更接近工件的接触。含有颗粒的蚀刻剂被物理搅动，由此将电能传递到工件并诱导其电化学蚀刻的颗粒的分布是统一的。

5. 发明授权

US4815027A Optical operation apparatus for effecting parallel signal processing by detecting light transmitted through a filter in the form of a matrix 失效
标题翻译：光学操作装置，用于通过以矩阵的形式检测透过滤光器的光来进行并行信号处理
公开(公告)号：US4815027A
公开(公告)日：1989-03-21
申请号：US102789
申请日：1987-09-23
申请人： Jun Tokumitsu , Kenji Saito , Yuichi Handa , Nobuyoshi Tanaka , Hidetoshi Nojiri
发明人： Jun Tokumitsu , Kenji Saito , Yuichi Handa , Nobuyoshi Tanaka , Hidetoshi Nojiri
IPC分类号： G06E3/00 , H04N1/60 , G06G9/00 , G06G7/16
CPC分类号： G06E3/005 , H04N1/6016
摘要： In an optical operation apparatus, a light source emits a light intensity-modulated on the basis of a first electrical signal. A modulating device receives the light from the light source and intensity-modulates the light on the basis of the first signal, and a photoelectric converting device converts the light modulated by the modulating device into a second electrical signal. These functions are carried out by any of a number of different arrangements of filter elements, and electro-optical or acoustico-optical devices can be used for intensity modulation.
摘要翻译：在光操作装置中，光源基于第一电信号发射强度调制光。调制装置接收来自光源的光并基于第一信号对光进行强度调制，并且光电转换装置将由调制装置调制的光转换为第二电信号。这些功能通过滤波元件的多种不同布置中的任何一种进行，并且电光或光学设备可用于强度调制。

6. 发明授权

US08067101B2 Capacitor electrode and method of manufacturing the same 有权
标题翻译：电容器电极及其制造方法
公开(公告)号：US08067101B2
公开(公告)日：2011-11-29
申请号：US12441681
申请日：2007-09-14
申请人： Yoshiko Hishitani , Hidetoshi Nojiri , Didier Hamm , Masaharu Hatano , Makoto Uchiyama
发明人： Yoshiko Hishitani , Hidetoshi Nojiri , Didier Hamm , Masaharu Hatano , Makoto Uchiyama
IPC分类号： H01G4/228 , H01G9/00 , B05D3/00 , G11B11/105 , B32B9/00 , B32B19/00
CPC分类号： H01G9/058 , H01G9/22 , H01G11/02 , H01G11/46 , H01G11/84 , Y02E60/13 , Y10T29/43 , Y10T428/26
摘要： This invention relates to a capacitor electrode which includes porous layers made of a fiber and/or a whisker containing crystal tungsten oxides. The tungsten oxide fiber and/or whisker contain W18O49 as a main ingredient. The tungsten oxide fiber and/or whisker are made on a substrate. When manufacturing the capacitor electrode the substrate or its precursor is heated in vacuo or in an inactive containing a minute amount of oxygen, thereby completing the fiber and/or whisker.
摘要翻译：本发明涉及一种电容器电极，其包括由含有晶体氧化钨的纤维和/或晶须制成的多孔层。氧化钨纤维和/或晶须含有W18O49作为主要成分。氧化钨纤维和/或晶须在基材上制成。当制造电容器电极时，将衬底或其前体在真空中或在含有少量氧气的无活性物质中加热，由此完成纤维和/或晶须。

7. 发明授权

US07583413B2 Signal output and image forming apparatus with method of judging sheet type by impact detection 失效
标题翻译：具有通过冲击检测判断纸张类型的方法的信号输出和图像形成装置
公开(公告)号：US07583413B2
公开(公告)日：2009-09-01
申请号：US12049778
申请日：2008-03-17
申请人： Hidetoshi Nojiri , Masatake Akaike , Norio Kaneko , Takehiko Kawasaki , Koichiro Nakanishi , Naoyo Gemma , Toshitsugu Morimoto
发明人： Hidetoshi Nojiri , Masatake Akaike , Norio Kaneko , Takehiko Kawasaki , Koichiro Nakanishi , Naoyo Gemma , Toshitsugu Morimoto
IPC分类号： G06K15/02 , H04N1/23 , G01N3/30
CPC分类号： B41J11/009 , G01N29/045 , G01N29/4427 , G01N2291/012 , G01N2291/014 , G01N2291/0237 , G01N2291/2632 , G01S7/60
摘要： A signal output apparatus comprises an impact applying unit applying an impact to a sheet from the outside thereof, and a detection unit outputting a signal by the impact. An apparatus for determining the type of sheet comprises an impact applying unit applying an impact to a sheet from the outside thereof, and a detection unit outputting a signal by the impact, wherein the type of the sheet is determined based on the signal from the detection unit. An image forming apparatus comprises an impact applying unit applying an impact to a sheet from the outside thereof, and a detection unit outputting a signal by the impact. A method for determining the type of sheet comprises the steps of applying an impact to a sheet from the outside thereof, outputting a signal from a detection unit by the applying step, and determining the type of sheet based on the signal. An apparatus carries out the method for determining the type of sheet. An information output apparatus used in an image forming apparatus comprises an impact applying unit applying an impact to a target from the outside thereof, and a detection unit outputting information by the impact.
摘要翻译：信号输出装置包括从外部向片材施加冲击的冲击施加单元，以及通过冲击输出信号的检测单元。用于确定片材类型的装置包括冲击施加单元，其从外部向片材施加冲击;以及检测单元，通过冲击输出信号，其中根据来自检测器的信号确定片材的类型单元。图像形成装置包括从外部向片材施加冲击的冲击施加单元和由冲击输出信号的检测单元。用于确定片材类型的方法包括以下步骤：从外部对片材施加冲击，通过施加步骤从检测单元输出信号，以及基于该信号确定片材的类型。一种装置执行用于确定片材类型的方法。在图像形成装置中使用的信息输出装置包括从外部对目标施加冲击的冲击施加单元和通过冲击输出信息的检测单元。

8. 发明授权

US06214738B1 Method for producing narrow pores and structure having the narrow pores, and narrow pores and structure produced by the method 有权
标题翻译：用于制造具有窄孔的窄孔和结构的方法，以及通过该方法产生的窄孔和结构
公开(公告)号：US06214738B1
公开(公告)日：2001-04-10
申请号：US09466910
申请日：1999-12-20
申请人： Toshiaki Aiba , Hidetoshi Nojiri , Taiko Motoi , Tohru Den , Tatsuya Iwasaki
发明人： Toshiaki Aiba , Hidetoshi Nojiri , Taiko Motoi , Tohru Den , Tatsuya Iwasaki
IPC分类号： H01L21302
CPC分类号： B82Y15/00 , B82Y30/00 , C25D11/022 , C25D11/04 , C25D11/045 , C25D11/16 , C25D11/20 , C25D11/24
摘要： Provided is a method for producing regularly ordered narrow pores excellent in linearity, and a structure with such narrow pores. A method for producing a narrow pore comprises a step of radiating a particle beam onto a workpiece, and a step of carrying out anodic oxidation of the workpiece having been irradiated with the particle beam, to form a narrow pore in the workpiece.
摘要翻译：本发明提供一种生产线性优异的规则排列的窄孔的方法和具有这种窄孔的结构。用于制造窄孔的方法包括将粒子束照射到工件上的步骤，以及对已经被粒子束照射的工件进行阳极氧化的步骤，以在工件中形成窄孔。

9. 发明授权

US4796067A Semiconductor device having a superlattice structure 失效
标题翻译：具有超晶格结构的半导体器件
公开(公告)号：US4796067A
公开(公告)日：1989-01-03
申请号：US828254
申请日：1986-02-11
申请人： Akira Shimizu , Toshitami Hara , Hidetoshi Nojiri , Isao Hakamada , Seiichi Miyazawa , Yoshinobu Sekiguchi
发明人： Akira Shimizu , Toshitami Hara , Hidetoshi Nojiri , Isao Hakamada , Seiichi Miyazawa , Yoshinobu Sekiguchi
IPC分类号： H01L29/80 , H01L21/331 , H01L29/15 , H01L29/201 , H01L29/73 , H01L29/737 , H01L29/812 , H01S5/00 , H01S5/343 , H01L27/12 , H01L33/00
CPC分类号： B82Y20/00 , H01L29/155 , H01L29/7376 , H01L29/8122 , H01S5/34313 , H01S5/3432
摘要： A semiconductor device having a plurality of laminated semiconductor layers in which a current flows in the direction of lamination. A superlattice layer is formed in at least one of the layers and the potential of the quantum well of the superlattice layer is lower than the potential of the semiconductor layer in which the superlattice layer is formed. The potential of the barrier of the superlattice layer is higher than the potential of the semiconductor layer in which said superlattice layer is formed.
摘要翻译：一种半导体器件，其具有电流沿层叠方向流动的多个层叠半导体层。在至少一层中形成超晶格层，并且超晶格层的量子阱的电位低于其中形成超晶格层的半导体层的电位。超晶格层的势垒的电位高于形成所述超晶格层的半导体层的电位。

10. 发明授权

US4553317A Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors 失效
标题翻译：通过不同种类的半导体的接合获得冲击电离系数率的方法
公开(公告)号：US4553317A
公开(公告)日：1985-11-19
申请号：US437627
申请日：1982-10-29
申请人： Hiroyuki Sakaki , Tomonori Tanoue , Hidetoshi Nojiri
发明人： Hiroyuki Sakaki , Tomonori Tanoue , Hidetoshi Nojiri
IPC分类号： H01L29/205 , H01L29/864 , H01L29/868 , H01L31/107 , H01L31/18 , H01L21/20
CPC分类号： H01L31/1844 , H01L29/205 , H01L29/864 , H01L29/868 , H01L31/1075 , H01L31/18 , H01L31/184 , Y02E10/544 , Y10S438/936
摘要： In a semiconductor element using avalanche multiplication such as a light-receiving element or a microwave oscillating element, a semiconductor A and a semiconductor B which satisfy the following condition:X.sub.A
摘要翻译：在使用诸如光接收元件或微波振荡元件的雪崩倍数的半导体元件中，满足以下条件的半导体A和半导体B：XA

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