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    • 1. 发明申请
    • IMAGE PROCESSING APPARATUS AND IMAGE PROCESSING METHOD
    • 图像处理装置和图像处理方法
    • US20110128560A1
    • 2011-06-02
    • US12951985
    • 2010-11-22
    • Yasunori FujimotoRyuta Hirayama
    • Yasunori FujimotoRyuta Hirayama
    • H04N1/60
    • H04N1/4092H04N1/58
    • An image processing apparatus includes an acquisition unit, a determination unit, and a thinning unit. The acquisition unit may acquire color information concerning color of an image having an attribute of at least one of character or line drawing. The determination unit may determine a thinning ratio for thinning data of non-edge portions of the image according to the color information acquired by the acquisition unit. The thinning unit may thin data of the non-edge portions according to the thinning ratio determined by the determination unit. The thinning ratio determined by the determination unit when the color information indicates a color other than black is lower than the thinning ratio determined when the color information indicates black.
    • 图像处理装置包括获取单元,确定单元和稀疏单元。 获取单元可以获取关于具有字符或线条图中的至少一个的属性的图像的颜色的颜色信息。 确定单元可以根据由获取单元获取的颜色信息来确定用于稀疏图像的非边缘部分的数据的间隔比。 稀疏单元可以根据由确定单元确定的稀疏比来稀薄非边缘部分的数据。 当颜色信息指示黑色以外的颜色时,确定单元确定的稀疏比低于当颜色信息表示黑色时确定的稀疏比。
    • 2. 发明授权
    • Method of chemically etching semiconductor substrate
    • 化学蚀刻半导体衬底的方法
    • US4836888A
    • 1989-06-06
    • US194943
    • 1988-05-17
    • Hidetoshi NojiriRyuta Hirayama
    • Hidetoshi NojiriRyuta Hirayama
    • H01L21/306H01L21/3063
    • H01L21/3063Y10S438/977
    • In a method of etching a semiconductor substrate to a desired depth from the principal surface is a selected area or selected areas by immersing the semiconductor substrate with a patterned mask such as oxide film in an etching liquid such as hydrated hydrazine, an electrode is formed on a surface of the semiconductor substrate in an area separated from the area(s) to be etched before immersing the substrate in the etching liquid. The material of the electrode is chemically stable and insusceptible to reaction with the etching liquid. In the disclosed etching method, a cathodic reduction reaction takes place on the aforementioned electrode while an anodic oxidation reaction, which causes anodic dissolution of the semiconductor material, takes place in the exposed area(s) of the semiconductor substrate. Therefore, etching is not obstacled by precipitation of the material once dissolved in the etching liquid, so that the new surface provided by etching is excellen in flatness.
    • 在通过将诸如氧化物膜的图案化掩模的半导体衬底浸入诸如水合肼的蚀刻液中的方法中,将半导体衬底蚀刻到从主表面到期望深度的方法是选定区域或选定区域, 在将基板浸渍在蚀刻液中之前,在与要蚀刻的区域分离的区域中的半导体衬底的表面。 电极的材料是化学稳定的并且不易与蚀刻液体反应。 在所公开的蚀刻方法中,在上述电极上进行阴极还原反应,同时在半导体衬底的暴露区域发生导致半导体材料的阳极溶解的阳极氧化反应。 因此,蚀刻不会被溶解在蚀刻液中的材料的沉淀所阻挡,因此通过蚀刻提供的新表面的平坦性优异。
    • 4. 发明授权
    • Durable electrode for electrolysis
    • 用于电解的耐用电极
    • US4481097A
    • 1984-11-06
    • US575602
    • 1984-01-31
    • Hiroshi AsanoTakayuki ShimamuneKazuhiro HiraoRyuta Hirayama
    • Hiroshi AsanoTakayuki ShimamuneKazuhiro HiraoRyuta Hirayama
    • C25B11/04C25B11/08C25B11/10C25C7/02C25B1/26
    • C25B11/0484C25C7/02
    • An electrode comprising a substrate of a conducting metal, a coat of an electrode active substrate, and a layer interposed between the substrate and the coat to serve as a protective barrier for the substrate acquires improved durability by using, as the intermediate layer, a layer having platinum dispersed in a mixed oxide consisting of an oxide of at least one metal selected from the group consisting of titanium and tin, each having a valence of 4, and an oxide of at least one metal selected from the group consisting of tantalum and niobium, each having a valence of 5. The electrode of improved durability is produced by a process which comprises the steps of preparing a substrate of a conducting metal, depositing a solution containing salts of Ti and/or Sn, Ta and/or Nb, and Pt on the substrate, heating the resultant coated substrate under the blanket of an oxidizing gas thereby forming an intermediate layer on the substrate, and subsequently coating the intermediate layer with a layer of an electrode active substance.
    • 包括导电金属的基板,电极活性基板的涂层和介于基板和涂层之间的层以用作基板的保护屏障的电极通过使用作为中间层的层来获得改善的耐久性 将铂分散在由选自钛和锡中的至少一种金属的氧化物组成的混合氧化物中,每一种都具有4价,以及选自钽和铌中的至少一种金属的氧化物 ,其价态为5.通过包括以下步骤的方法制备改善的耐久性的电极:制备导电金属的基材,沉积含有Ti和/或Sn,Ta和/或Nb的盐的溶液,以及 Pt在基板上,在氧化气体的橡皮布下加热所得到的涂覆的基板,从而在基板上形成中间层,随后用中间层 呃是电极活性物质。
    • 6. 发明授权
    • Durable electrode for electrolysis and process for production thereof
    • 用于电解的耐用电极及其生产方法
    • US4554176A
    • 1985-11-19
    • US602861
    • 1984-04-23
    • Hiroshi AsanoTakayuki ShimamuneKazuhiro HiraoRyuta Hirayama
    • Hiroshi AsanoTakayuki ShimamuneKazuhiro HiraoRyuta Hirayama
    • C25B11/04C25B11/08C25B11/10C25C7/02
    • C25B11/0484C25C7/02
    • An electrode comprising a substrate of a conducting metal, a coat of an electrode active substrate, and a layer interposed between the substrate and the coat to serve as a protective barrier for the substrate acquires improved durability by using, as the intermediate layer, a layer having platinum dispersed in a mixed oxide consisting of an oxide of at least one metal selected from the group consisting of titanium and tin, each having a valence of 4, and an oxide of at least one metal selected from the group consisting of tantalum and niobium, each having a valence of 5. The electrode of improved durability is produced by a process which comprises the steps of preparing a substrate of a conducting metal, depositing a solution containing salts of Ti and/or Sn, Ta and/or Nb, and Pt on the substrate, heating the resultant coated substrate under the blanket of an oxidizing gas thereby forming an intermediate layer on the substrate, and subsequently coating the intermediate layer with a layer of an electrode active substance.
    • 包括导电金属的基板,电极活性基板的涂层和介于基板和涂层之间的层以用作基板的保护屏障的电极通过使用作为中间层的层来获得改善的耐久性 将铂分散在由选自钛和锡中的至少一种金属的氧化物组成的混合氧化物中,每一种都具有4价,以及选自钽和铌中的至少一种金属的氧化物 ,其价态为5.通过包括以下步骤的方法制备改善的耐久性的电极:制备导电金属的基底,沉积含有Ti和/或Sn,Ta和/或Nb的盐的溶液,以及 Pt在基板上,在氧化气体的橡皮布下加热所得到的涂覆的基板,从而在基板上形成中间层,随后用中间层 呃是电极活性物质。
    • 9. 发明授权
    • Image processing apparatus and image processing method to reduce recording material amount
    • 图像处理装置和图像处理方法,以减少记录材料量
    • US08724167B2
    • 2014-05-13
    • US12951985
    • 2010-11-22
    • Yasunori FujimotoRyuta Hirayama
    • Yasunori FujimotoRyuta Hirayama
    • G06F15/00
    • H04N1/4092H04N1/58
    • An image processing apparatus includes an acquisition unit, a determination unit, and a thinning unit. The acquisition unit may acquire color information concerning color of an image having an attribute of at least one of character or line drawing. The determination unit may determine a thinning ratio for thinning data of non-edge portions of the image according to the color information acquired by the acquisition unit. The thinning unit may thin data of the non-edge portions according to the thinning ratio determined by the determination unit. The thinning ratio determined by the determination unit when the color information indicates a color other than black is lower than the thinning ratio determined when the color information indicates black.
    • 图像处理装置包括获取单元,确定单元和稀疏单元。 获取单元可以获取关于具有字符或线条图中的至少一个的属性的图像的颜色的颜色信息。 确定单元可以根据由获取单元获取的颜色信息来确定用于稀疏图像的非边缘部分的数据的间隔比。 稀疏单元可以根据由确定单元确定的稀疏比来稀薄非边缘部分的数据。 当颜色信息指示黑色以外的颜色时,确定单元确定的稀疏比低于当颜色信息表示黑色时确定的稀疏比。