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1. 发明授权

US07400030B2 Schottky diode with silver layer contacting the ZnO and MgxZn1−xO films 有权
标题翻译：具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触
公开(公告)号：US07400030B2
公开(公告)日：2008-07-15
申请号：US11042533
申请日：2005-01-25
申请人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong , Shaohua Liang
发明人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong , Shaohua Liang
IPC分类号： H01L29/04
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译：在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

2. 发明申请

US20050145970A1 Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films 有权
标题翻译：具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触
公开(公告)号：US20050145970A1
公开(公告)日：2005-07-07
申请号：US11042533
申请日：2005-01-25
申请人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri Emanetoglu , Jian Zhong , Shaohua Liang
发明人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri Emanetoglu , Jian Zhong , Shaohua Liang
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/108 , H01L31/112 , H01L29/84
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译：在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

3. 发明授权

US5811322A Method of making a broadband backside illuminated MESFET with collecting microlens 失效
标题翻译：制造具有收集微透镜的宽带背面照明MESFET的方法
公开(公告)号：US5811322A
公开(公告)日：1998-09-22
申请号：US679880
申请日：1996-07-15
申请人： Gerald D. Robinson
发明人： Gerald D. Robinson
IPC分类号： H01L31/0232 , H01L31/112 , H01L21/84
CPC分类号： H01L31/0232 , H01L31/1123
摘要： A composite-layer semiconductor device includes a gate above a host substrate, an n++ contact layer above the gate, and source and drain ohmic contacts applied to the n++ contact layer. The source and drain ohmic contacts define a central gate location which is recessed through the n++ contact layer toward the gate. The source and drain ohmic contacts create a barrier to chemical etching so that a current path below the central gate location can be incrementally recessed in repeated steps to precisely tailor the operating mode of the device for depletion or enhancement applications. The composite-layer semiconductor device is fabricated by depositing a gate on an n++ contact layer above a semi-insulating substrate. The semi-insulating substrate and gate are flipped onto an epoxy layer on the host substrate so that the gate is secured to the epoxy layer and the semi-insulating substrate presents an exposed backside. A portion of the exposed backside is removed. The source and drain ohmic contacts are applied to the exposed backside. The exposed backside is recessed at the central gate location to define the current path which connects the source and drain ohmic contacts.
摘要翻译：复合层半导体器件包括在主体衬底上方的栅极，栅极上方的n ++接触层以及施加到n ++接触层的源极和漏极欧姆接触。源极和漏极欧姆触点限定了通过n ++接触层向栅极凹陷的中心栅极位置。源极和漏极欧姆触点产生化学蚀刻的障碍，使得在中心栅极位置下方的电流路径可以以重复的步骤递增地凹入，以精确地定制用于耗尽或增强应用的器件的操作模式。通过在半绝缘基板上方的n ++接触层上沉积栅极来制造复合层半导体器件。半绝缘基板和栅极被翻转到主基板上的环氧树脂层上，使得栅极固定到环氧树脂层，半绝缘基板呈现暴露的背面。暴露背面的一部分被去除。源极和漏极欧姆接触应用于暴露的背面。暴露的背面凹陷在中央门位置以限定连接源极和漏极欧姆接触的电流路径。

4. 发明授权

US5196717A Field effect transistor type photo-detector 失效
标题翻译：场效应晶体管型光电检测器
公开(公告)号：US5196717A
公开(公告)日：1993-03-23
申请号：US807622
申请日：1991-12-13
申请人： Tamayo Hiroki , Hidetoshi Nojiri
发明人： Tamayo Hiroki , Hidetoshi Nojiri
IPC分类号： H01L31/0352 , H01L31/112
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/1123
摘要： A field effect type photo-detector comprises a semiconductor buffer layer arranged on a substrate. A semiconductor activation layer is arranged on that buffer layer, and a source electrode, a drain electrode and a gate electrode are arranged on the activation layer. A depletion layer for controlling a current flow between the source electrode and the drain electrode is created in the activation layer by applying a voltage to the gate electrode. When light irradiates the activation layer, the depletion layer changes. The buffer layer has a wider band gap than that of the activation layer and has an energy gap which serves as a barrier to carriers. The buffer layer has a sufficiently wide band gap to prevent the absorption of light having an equal wavelength to that of the light irradiated to the activation layer.
摘要翻译：场效应型光检测器包括布置在基板上的半导体缓冲层。在该缓冲层上配置有半导体激活层，在激活层上配置有源电极，漏电极和栅电极。通过向栅电极施加电压，在激活层中产生用于控制源电极和漏电极之间的电流的耗尽层。当光照射激活层时，耗尽层发生变化。缓冲层具有比活化层更宽的带隙，并且具有用作载流子屏障的能隙。缓冲层具有足够宽的带隙，以防止具有与照射到活化层的光的波长相等的波长的光的吸收。

5. 发明授权

US4618024A Moving seismic source system for use in water-covered areas 失效
标题翻译：移动地震源系统用于覆盖水域
公开(公告)号：US4618024A
公开(公告)日：1986-10-21
申请号：US470664
申请日：1983-02-28
申请人： Samuel N. Domenico
发明人： Samuel N. Domenico
IPC分类号： H01L31/0304 , H01L31/108 , H01L31/109 , H01L31/112 , G01V1/04 , H04R1/02
CPC分类号： H01L31/0304 , H01L31/108 , H01L31/109 , H01L31/1123 , Y02E10/544
摘要： A moving seismic source system for the use in water-covered areas comprising a conventional source and streamer cable means with multiple receiver, and additionally includes between the source and receivers a volume of the body of water containing a small percentage of free gas to form a gas-water mixture. The volume of gas-water mixture is of select size and shape to form an interface with the gas-free water to form, for example, a paraboloid which acts to reflect and attenuate acoustic waves that impinge on the interface and so minimizes extraneous seismic noise.
摘要翻译：一种用于水覆盖区域的移动地震源系统，包括具有多个接收器的常规源和流光缆装置，并且还包括在源和接收器之间包含少量游离气体的一定体积的水以形成气水混合物。气 - 水混合物的体积具有选择的尺寸和形状以与无气体水形成界面，以形成例如抛物面，其用于反射和衰减撞击界面的声波，并且使外来地震噪声最小化。

6. 发明授权

US2993998A Transistor combinations 失效
标题翻译：晶体管组合
公开(公告)号：US2993998A
公开(公告)日：1961-07-25
申请号：US51422055
申请日：1955-06-09
申请人： SPRAGUE ELECTRIC CO
发明人： KURT LEHOVEC
IPC分类号： H01L29/00 , H01L31/112
CPC分类号： H01L31/1123 , H01L29/00

7. 发明授权

US08860164B2 Light receiving device 有权
标题翻译：光接收装置
公开(公告)号：US08860164B2
公开(公告)日：2014-10-14
申请号：US14192118
申请日：2014-02-27
申请人： Fujitsu Limited
发明人： Kazumasa Takabayashi
IPC分类号： H01L31/0232 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/732 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/14 , H01L31/00 , H01L31/06 , H01L27/146
CPC分类号： H01L31/02325 , H01L27/1443 , H01L27/146 , H01L31/105 , H01L31/1123
摘要： A light receiving element includes a core configured to propagate a signal light, a first semiconductor layer having a first conductivity type, the first semiconductor layer being configured to receive the signal light from the core along a first direction in which the core extends, an absorbing layer configured to absorb the signal light received by the first semiconductor layer, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type.
摘要翻译：光接收元件包括被配置为传播信号光的芯，具有第一导电类型的第一半导体层，第一半导体层被配置为沿着芯延伸的第一方向接收来自芯的信号光，吸收被配置为吸收由第一半导体层接收的信号光的层，以及具有与第一导电类型相反的第二导电类型的第二半导体层。

8. 发明授权

US08860083B1 Low noise hybridized detector using charge transfer 有权
标题翻译：低噪声杂交检测器采用电荷转移
公开(公告)号：US08860083B1
公开(公告)日：2014-10-14
申请号：US13892737
申请日：2013-05-13
申请人： Sensors Unlimited, Inc.
发明人： John Alfred Trezza
IPC分类号： H01L31/101 , H01L31/112 , H01L31/11 , H01L31/18 , H01L33/00 , H01L31/105 , H01L27/146 , H01L31/107
CPC分类号： H01L31/1129 , H01L27/14612 , H01L27/14649 , H01L27/14679 , H01L27/14694 , H01L31/105 , H01L31/1075 , H01L31/1105 , H01L31/1122 , H01L31/1123 , H01L31/1844 , H01L33/0016
摘要： A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells.
摘要翻译：低噪声红外光电探测器具有包括光电二极管和晶体管的外延异质结构。光电二极管包括第一导电类型的高灵敏度窄带隙光电检测器层和与光电检测器层接触的第二导电类型的收集阱。晶体管包括收集阱，与收集阱和光电检测器层隔开的第二导电类型的转移阱以及在收集阱和转移阱之间的第一导电类型的区域。

9. 发明授权

US06846731B2 Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films 失效
标题翻译：具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触
公开(公告)号：US06846731B2
公开(公告)日：2005-01-25
申请号：US10158540
申请日：2002-05-30
申请人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong
发明人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/108 , H01L31/112 , H01L21/28
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译：在本发明中，提供了在n型ZnO和Mg x Zn 1-x O外延膜上制造的肖特基UV光电探测器等半导体器件。 ZnO和MgxZn1-xO膜在R平面蓝宝石衬底上生长，肖特基二极管分别用银和铝作为肖特基和欧姆接触金属制作在ZnO和Mg x Zn 1-x O膜上。肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

10. 发明授权

US5804847A Backside illuminated FET optical receiver with gallium arsenide species 失效
标题翻译：背面照明FET光接收器与砷化镓种类
公开(公告)号：US5804847A
公开(公告)日：1998-09-08
申请号：US577995
申请日：1995-12-22
申请人： Gerald D. Robinson
发明人： Gerald D. Robinson
IPC分类号： H01L29/812 , H01L31/0352 , H01L31/112 , H01L31/18 , H01L29/80 , H01L31/0288
CPC分类号： H01L31/1844 , H01L29/8126 , H01L31/0352 , H01L31/1123 , H01L31/1126 , Y02E10/544 , Y10S438/977 , Y10S438/98
摘要： A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration and then inverted onto a new permanent substrate member and an original surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Electrical characteristics including curve tracer electrical data originating in both dark and illuminated devices and devices of varying size and both depletion mode and enhancement mode operation are also disclosed. Fabrication of the device from gallium arsenide semiconductor material and utilization for infrared energy transducing in a number of differing electronic applications are also disclosed.
摘要翻译：公开了一种具有大面积背面光能接收表面的光电FET器件。光源FET器件以源栅极和漏极向上配置制造，然后反转到新的永久性衬底构件上，并且去除原始替代衬底构件以暴露有源区域背面光能接收表面。还公开了包括起源于暗和照明装置的曲线跟踪器电数据和不同大小以及耗尽模式和增强模式操作两者的电特性。还公开了从砷化镓半导体材料制造器件和在许多不同的电子应用中利用红外能量转换的方法。

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